The RF MOSFET Line
RF Power Field-Effect Transistor
NChannel EnhancementMode MOSFET
Designed primarily for wideband largesignal output and driver stages from
30200 MHz.
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 45 Watts
Power Gain = 17 dB (Min)
Efficiency = 60% (Min)
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR
Low Crss 8 pF @ VDS = 28 V
Gold Top Metal
Typical Data For Power Amplifier Applications in Industrial,
Commercial and Amateur Radio Equipment
Typical Performance at 30 MHz, 28 Vdc
Output Power = 30 Watts (PEP)
Power Gain = 20 dB (Typ)
Efficiency = 50% (Typ)
IMD(d3) (30 Watts PEP) 32 dB (Typ)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainGate Voltage
VDSS
65
Vdc
DrainGate Voltage (RGS = 1.0 M
)
VDGR
65
Vdc
GateSource Voltage
VGS
20
Adc
Drain Current -- Continuous
ID
4.5
Adc
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
115
0.66
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
Operating Junction Temperature
TJ
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.52
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(ID = 50 mA, VGS = 0)
V(BR)DSS
65
80
--
Vdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 28 V)
IDSS
--
--
1.0
mAdc
GateSource Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
--
--
1.0
Adc
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF171A
45 W, 150 MHz
MOSFET BROADBAND
RF POWER FET
CASE 21107, STYLE 2
D
G
S
Order this document
by MRF171A/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 2
ELECTRICAL CHARACTERISTICS continued
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
VGS(th)
1.5
2.5
4.5
Vdc
DrainSource OnVoltage
(VGS = 10 V, ID = 3 A)
VDS(on)
--
1.0
--
V
Forward Transconductance
(VDS = 10 V, ID = 2 A)
gfs
1.4
1.8
--
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
--
60
--
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
--
70
--
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
--
8
--
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA)
Gps
17
19.5
--
dB
Drain Efficiency
(VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA)
60
70
--
%
Electrical Ruggedness
(VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA,
VSWR 30:1 at All Phase Angles)
No Degradation in Output Power
TYPICAL FUNCTIONAL TESTS (SSB)
Common Source Power Gain
(VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA,
f = 30; 30.001 MHz)
Gps
--
20
--
dB
Drain Efficiency
(VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA,
f = 30; 30.001 MHz)
--
50
--
%
Intermodulation Distortion
(VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA,
f = 30; 30.001 MHz)
IMD(d3)
--
32
--
dB
2
REV 2
Figure 1. MRF171A 150 MHz Test Circuit
C1, C10
1000 pF, Chip Capacitor
C2, C5, C8
220 pF, Trimmer Capacitors, Johanson
C3
43 pF, 100 mil Chip Capacitor, ATC
C4
120 pF, 100 mil Chip Capacitor, ATC
C6, C14
0.1
F, Capacitors
C7
50 pF, 100 mil Chip Capacitor, ATC
C9
12 pF, 100 mil Chip Capacitor, ATC
C11, C12
680 pF, Feedthru Capacitors
C13
50
F, 50 V, Electrolytic Capacitor
L1
2 Turns, 0.297
ID, 18 AWG
L2
11/2 Turns, 0.265
ID, 18 AWG
L3
11/4 Turns, 0.234
ID, 18 AWG
L4
11/2 Turns, 0.250
ID, 18 AWG
R1
68
, 1/2 W Chip Resistor
R2
1 k
, 1/2 W Chip Resistor
R3
10 k
, 1/2 W Chip Resistor
Z1
0.160
x 0.400
Microstrip
Z2
0.160
x 0.600
Microstrip
Z3
0.160
x 0.600
Microstrip
Z4
0.160
x 0.900
Microstrip
Z5
0.160
x 0.800
Microstrip
Z6
0.160
x 0.800
Microstrip
Z7
0.160
x 0.400
Microstrip
RFC1
Ferroxcube VK20019/4B
RFC2
10 Turns, 0.250
ID, 20 AWG, Enamel
Board
0.062
, G10 1 oz. Copper Clad
Both Sides,
r = 2.56
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
BIAS
L2
C1
C5
RFC2
C4
R2
R3
C6
C13
DUT
+
VDC
L1
VDD 28 Vdc
C12
RFC1
C11
C14
C2
C3
L3
C8
C7
Z6
L4
Z7
C9
C10
+
+
R1
3
REV 2
RF
INPUT
VGG
C3
DUT
C1
C2
C11
+
+
+
Figure 2. MRF171A 30 MHz Test Circuit
C1, C3, C5, C6
0.1
F, Chip Capacitors
C2, C4
1000 pF, Chip Capacitors
C7
68 pF, Dipped Mica
C8
0.1
F, Ceramic Cap or Equivalent
C9, C10
680 pF, Feedthru Capacitors
C11
250
F, 50 V, Electrolytic Capacitor
28 V
RF
OUTPUT
R1
R2
R3
C6
R4
C7
T1
T2
C4
C5
L1
C10
L2
C9
C8
L1, L2
VK200 20/4B Ferrite Choke
R1, R2
200
, 1/2 W Carbon
R3
3
, 1/2 W Carbon
R4
270
, 2 W Carbon
T1
4:1 Impedance Broadband Transformer
T2
1:4 Impedance Broadband Transformer
4
REV 2
TYPICAL CHARACTERISTICS
Figure 3. Output Power versus Input Power
Pin, INPUT POWER (WATTS) PEP
10
0
0.4
50
30
Figure 4. Output Power versus Input Power
0
Pin, INPUT POWER (WATTS)
70
30
0.2
0.6
1.0
P out
, OUTPUT
POWER (W
A
TTS) PEP
0
P
out
, OUTPUT
POWER (W
A
TTS)
60
Figure 5. Output Power versus Input Power
18
Pin, INPUT POWER (WATTS)
0
Figure 6. Output Power versus Supply Voltage
50
VDD, DRAIN SUPPLY VOLTAGE (VOLTS)
20
0.9
Figure 7. Output Power versus Supply Voltage
12
VDD, SUPPLY VOLTAGE (VOLTS)
0
26
50
Figure 8. Output Power versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
0
60
18
0
10
20
40
30
0
20
22
12
20
30
70
24
26
28
80
70
2
6
10
50
f = 100 MHz
200 MHz
0.4
150 MHz
20
40
14
16
10
VDD = 28 V
IDQ = 100 mA
f = 30 MHz
TONE SEPARATION = 1 kHz
10
VDD = 28 V
IDQ = 25 mA
0.5
0.3
0.8
0.1
0.7
0.9
60
20
10
40
0.8
0.4
1.2
2.0
0
1.0
0.6
1.6
0.2
1.4
1.8
0.1
0.2
0.3
0.6
0.7
0.8
0.5
16
4
8
12
P
out
, OUTPUT
POWER (W
A
TTS)
f = 100 MHz
150 MHz
200 MHz
VDD = 13.5 V
IDQ = 25 mA
Pin = 1.0 W
0.5 W
40
60
14
18
P
out
, OUTPUT
POWER (W
A
TTS)
0.1 W
IDQ = 25 mA
f = 100 MHz
P
out
, OUTPUT
POWER (W
A
TTS)
40
60
14
16
20
22
24
28
Pin = 2.0 W
1.0 W
0.3 W
IDQ = 25 mA
f = 150 MHz
12
26
18
14
16
20
22
24
28
50
30
70
P
out
, OUTPUT
POWER (W
A
TTS)
IDQ = 25 mA
f = 200 MHz
Pin = 4.0 W
3.0 W
2.0 W
5
REV 2
PDF 
ZIP