The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband largesignal output amplifier stages in
30200 MHz frequency range.
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 100 W
Minimum Gain = 9.0 dB
BuiltIn Matching Network for Broadband Operation
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability
High Output Saturation Power -- Ideally Suited for 30 W Carrier/120 W
Peak AM Amplifier Service
Guaranteed Performance in Broadband Test Fixture
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
35
Vdc
CollectorBase Voltage
V
CBO
65
Vdc
EmitterBase Voltage
V
EBO
4.0
Vdc
Collector Current -- Continuous
Collector Current
-- Peak (10 seconds)
I
C
12
18
Adc
Total Device Dissipation @ T
C
= 25
C (1)
Derate above 25
C
P
D
270
1.54
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.65
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
(BR)CEO
35
--
--
Vdc
CollectorEmitter Breakdown Voltage
(I
C
= 100 mAdc, V
BE
= 0)
V
(BR)CES
65
--
--
Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
65
--
--
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
--
--
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
h
FE
10
25
80
--
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
MRF317
100 W, 30200 MHz
CONTROLLED Q
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 31601, STYLE 1
Order this document
by MRF317/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 7
ELECTRICAL CHARACTERISTICS -- continued
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
--
150
175
pF
FUNCTIONAL TESTS (Figure 2)
CommonEmitter Amplifier Power Gain
(V
CC
= 28 Vdc, P
out
= 100 W, f = 150 MHz, I
C
(Max) = 6.5 Adc)
G
PE
9.0
10
--
dB
Collector Efficiency
(V
CC
= 28 Vdc, P
out
= 100 W, f = 150 MHz, I
C
(Max) = 6.5 Adc)
55
60
--
%
Load Mismatch
(V
CC
= 28 Vdc, P
out
= 100 W CW, f = 150 MHz,
VSWR = 30:1 all phase angles)
No Degradation in Output Power
2
REV 7
Figure 1. 110160 MHz Broadband Amplifier -- Test Fixture Schematic
Figure 2. Power Gain versus Frequency
Broadband Test Fixture
Figure 3. Efficiency versus Frequency
Broadband Test Fixture
Figure 4. Input VSWR versus Frequency
Broadband Test Fixture
R1
C5
RFC3
RFC2
R2
R3
RFC5
RFC6
RFC1
L1
C2
C3
C4
C6
C7
C8
C9
L4
L3
RFC4
C11
C12
C13
DC +28 Vdc
C10
RF
OUTPUT
RF
INPUT
C1
L2
C1, C9 -- 39 pF, 100 mil ATC
C2 -- 120 pF, 100 mil ATC
C3, C4 -- 360 pF, 100 mil ATC
C5 -- 1000 pF Dipped Mica
C6, C7 -- 100 pF, 100 mil ATC*
C8 -- 18 pF, 100 mil ATC*
C10 -- 43 pF, 100 mil ATC
C11 -- 60 pF, Underwood
C12 -- 0.1
F Erie Redcap
C13 -- 1000 pF, Underwood J102
L1 -- 50 nH
L2 -- 6.0 nH
L3 -- 8.0 nH
L4 -- 32 nH
RFC1 -- 0.15
H Molded Coil
RFC2, RFC3 -- Ferroxcube Bead 5659065/3B
RFC4 -- 1 Turn, #18 Wire, 2.0
L
RFC5 -- Ferroxcube VK200 19/4B
RFC6 -- 7 Turns, #18 Wire, 0.3
ID
R1 -- 10
1/2 W
R2, R3 -- 10
1.0 W
*Combination of C6, C7, C8 equals 220 pF.
EFFICIENCY
,
G
PE
, POWER GAIN (dB)
(%)
10
9
8
7
6
160
135
110
f, FREQUENCY (MHz)
70
160
135
110
f, FREQUENCY (MHz)
60
50
40
30
20
6
160
135
110
f, FREQUENCY (MHz)
INPUT
VSWR
5
4
3
2
1
P
out
= 100 W
V
CC
= 28 V
P
out
= 100 W
V
CC
= 28 V
P
out
= 100 W
V
CC
= 28 V
DUT
Figure 5. Output Power versus Input Power
P
, OUTPUT
POWER (W
A
TTS)
out
140
0.2
P
in
, INPUT POWER (WATTS)
0.5
1
2
5
10
20
120
100
80
60
40
20
200 MHz
f = 30 MHz
100 MHz
50 MHz
150 MHz
V
CC
= 28 V
3
REV 7
Figure 6. Power Gain versus Frequency
Figure 7. Power Output versus Supply Voltage
Figure 8. Power Output versus Supply Voltage
Figure 9. Power Output versus Supply Voltage
TYPICAL PERFORMANCE CURVES
G
PE
, COMMON EMITTER POWER GAIN (dB)
P
, POWER OUTPUT
(W
A
TTS)
out
P
, POWER OUTPUT
(W
A
TTS)
out
P
, POWER OUTPUT
(W
A
TTS)
out
17
f, FREQUENCY (MHz)
20
16
15
14
13
12
11
10
9
8
40
60
80
100
120 140
160 180 200
P
out
= 100 W
V
CC
= 28 V
120
V
CC
, SUPPLY VOLTAGE (VOLTS)
12
100
80
60
40
20
16
20
24
28
120
V
CC
, SUPPLY VOLTAGE (VOLTS)
12
100
80
60
40
20
16
20
24
28
V
CC
, SUPPLY VOLTAGE (VOLTS)
12
100
80
60
40
20
16
20
24
28
P
in
= 10 W
8 W
6 W
P
in
= 10 W
8 W
6 W
P
in
= 10 W
8 W
6 W
Figure 10. Series Equivalent InputOutput Impedance
f = 100 MHz
f = 150 MHz
f = 200 MHz
Z
in
f = 30 MHz
150
0
1.0
4.0
100
50
Z
OL
* = Conjugate of the optimum load impedance into which the device output
Z
OL
* =
operates at a given output power, voltage and frequency.
2.0
3.0
4.0
5.0
6.0
3.0
2.0
1.0
1.0
2.0
3.0
125
175
200
f = 30 MHz
150
100
50
125
175
200
V
CC
= 28 V, P
out
= 100 W
f
MHz
Z
in
OHMS
Z
OL
*
OHMS
30
50
100
125
150
175
200
1.2 - j2.0
1.0 - j1.8
0.3 + j0.7
0.3 + j1.0
0.6 + j1.3
1.0 + j1.5
0.9 + j1.0
4.3 - j5.0
4.0 - j4.9
2.0 - j2.3
1.9 - j1.9
1.9 - j1.3
1.6 - j0.6
1.1 - j0.6
Z
OL
*
4
REV 7
PACKAGE DIMENSIONS
CASE 31601
ISSUE D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
24.38
25.14
0.960
0.990
B
12.45
12.95
0.490
0.510
C
5.97
7.62
0.235
0.300
D
5.33
5.58
0.210
0.220
E
2.16
3.04
0.085
0.120
F
5.08
5.33
0.200
0.210
H
18.29
18.54
0.720
0.730
J
0.10
0.15
0.004
0.006
K
10.29
11.17
0.405
0.440
L
3.81
4.06
0.150
0.160
N
3.81
4.31
0.150
0.170
Q
2.92
3.30
0.115
0.130
R
3.05
3.30
0.120
0.130
U
11.94
12.57
0.470
0.495
4
3
2
1
F
D
R
Q
L
K
E
J
B
A
H
N
C
U
5
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 7
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