GaAs SPDT Terminated Switch, DC - 3.0 GHz
SW-442
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
GaAs SPDT Terminated Switch
DC - 3.0 GHz
SW-442
Features
Low Cost Plastic SOT-26 Package
Low Insertion Loss <0.6 dB @ 900 MHz
High Isolation >38 dB @ 900 MHz
Low Power Consumption <10A @ +3V
Positive or Negative 2.5 to 8 V Control
Description
M/A-COM's SW-442 is a GaAs monolithic switch in a low cost
SOT-26 surface mount plastic package. The SW-442 is ideally
suited for applications where very low power consumption, low
insertion loss, very small size and low cost are required. Typical
application is in dual band systems where switching between
small signal components is required such as filter banks, single
band LNA's, converters etc. The SW-442 can be used in applica-
tions up to 0.25 Watts in systems such as CDMA, W-CDMA,
PCS, DCS1800, GSM and other analog/digital wireless commu-
nications systems.
The SW-442 is fabricated using a mature 0.8 micron GaAs
MESFET process. The process features full passivation for
increased performance and reliability.
SOT-26 Plastic Package
Electrical Specifications T
A
= 25C
Ordering Information
Part Number
Package
SW-442 PIN
SOT-26 Plastic Package
SW-442TR
Forward Tape and Reel
1
SW-442RTR
Reverse Tape and Reel
1
SW-442SMB
Sample Board
1. Reference Application Note M513 for reel size information.
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
DC - 1 GHz
dB
0.5
0.7
1- 2 GHz
dB
0.8
1.0
2 - 3 GHz
dB
1.1
1.25
Isolation
DC - 1 GHz
dB
36
38
1 - 2 GHz
dB
25
28
2 - 3 GHz
dB
21
22
VSWR
DC - 2 GHz
1.4:1
1.5:1
2 - 3 GHz
1.6:1
1.7:1
P
1dB
(2.7V supply)
500 MHz - 3 GHz
dBm
24
P
1dB
(5V supply)
500 MHz - 3 GHz
dBm
28
IP
2
(2.7V supply)
2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone
dBm
80
IP
3
(2.7V supply)
2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone
dBm
50
T
rise
, T
fall
T
on
, T
off
Transients
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, Control to 10% RF
In-Band
ns
ns
mV
40
60
10
Gate Leakage
V
CTL
= 2.5V
A
6
15
PIN 1
XX#Y
GaAs SPDT Terminated Switch, DC - 3.0 GHz
SW-442
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Functional Schematic
Positive Control Voltage
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Input Power (0.5 - 3.0 GHz)
3V Control
5V Control
+30 dBm
+33 dBm
Operating Voltage
+8.5 Volts
Operating Temperature
-40C to +85C
Storage Temperature
-65C to +150C
1. Exceeding any one or combination of these limits may cause
permanent damage.
Truth Table
Mode
(Control)
V1
V2
RFC - RF1
RFC - RF2
Positive
1
00.2V
+2.5 to +8V
+2.5 to +8V
00.2V
On
Off
Off
On
Negative
2
00.2V
-2.5V to -8V
-2.5V to -8V
00.2V
Off
On
On
Off
1. External DC blocking capacitors are required on all RF ports and
GND. GND capacitors can be used with postive control voltage to
resonate lead inductance for improved isolation.
2. If negative control is used, DC blocking capacitors and GND
capacitors are not required.
PIN Configuration
PIN No.
Function
Description
1
RF1
RF in/out
2
GND
RF Ground
3
RF2
RF in/out
4
V2
V Control 2
5
RFC
RF COMMON
6
V1
V Control 1
Handling Procedures
The following precautions should be observed to avoid damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are ESD sensitive and can
be damaged by static electricity. Proper ESD techniques should
be used when handling these devices.
RF1 GND RF2
V1
RFC
V2
PIN 1
C=39pF
C=39pF
C=39pF
CGND
C=100pF
C=100pF
Functional Schematic
Negative Control Voltage
RF1 GND RF2
V1
RFC
V2
PIN 1
GaAs SPDT Terminated Switch, DC - 3.0 GHz
SW-442
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
INSERTION LOSS (dB)
+85C
+25C
-40C
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
INSERTION LOSS (dB)
CGND=39pF
CGND=8pF
10
15
20
25
30
35
40
45
50
55
60
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
ISOLATION (dB)
0
5
10
15
20
25
30
35
40
45
50
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
ISOLATION (dB)
CGND=39pF
CGND=8pF
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
VSWR
+85C
+25C
-40C
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
VSWR
+25C
-40C
+85C
Typical Performance Curves
Output VSWR vs. Frequency over
Temperature
Input VSWR vs. Frequency over
Temperature
Isolation Loss vs. Frequency over
Temperature (Postive Control)
Isolation Loss vs. Frequency over
Temperature (Negative Control)
Insertion Loss vs. Frequency over
Temperature (Postive Control)
Insertion Loss vs. Frequency over
Temperature (Negative Control)
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