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REV: 080403
Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device
may be simultaneously available through various sales channels. For information about device errata, click here:
www.maxim-ic.com/errata
.
GENERAL DESCRIPTION
The DS2762 high-precision Li+ battery monitor is a
data-acquisition, information-storage, and safety-
protection device tailored for cost-sensitive battery
pack applications. This low-power device integrates
precise temperature, voltage, and current
measurement, nonvolatile (NV) data storage, and Li+
protection into the small footprint of either a TSSOP
package or flip-chip package. The DS2762 is a key
component in applications including remaining
capacity estimation, safety monitoring, and battery-
specific data storage.
PIN CONFIGURATIONS
FEATURES
Li+ Safety Circuit
Overvoltage Protection
Overcurrent/Short-Circuit Protection
Undervoltage Protection
0V Battery Recovery Charge
Available in Two Configurations:
Internal 25m
W Sense Resistor
External User-Selectable Sense Resistor
Current Measurement
12-Bit Bidirectional Measurement
Internal Sense Resistor Configuration:
0.625mA LSB and 1.9A Dynamic Range
External Sense Resistor Configuration:
15.625
mV LSB and 64mV Dynamic Range
Current Accumulation:
Internal Sense Resistor: 0.25mAhr LSB
External Sense Resistor: 6.25
mVhr KSB
Voltage Measurement with 4.88mV Resolution
Temperature Measurement Using Integrated
Sensor with 0.125C Resolution
System Power Management and Control
Feature Support
32 Bytes of Lockable EEPROM
16 Bytes of General-Purpose SRAM
Dallas 1-Wire
Interface with Unique 64-Bit
Device Address
Low-Power Consumption:
Active Current: 60
mA typ, 90mA max
Sleep Current: 1
mA typ, 2mA max
APPLICATIONS
PDAs
Cell Phones
Smartphones
Digital Cameras
ORDERING INFORMATION
PART
TEMP RANGE
PIN-PACKAGE
DS2762BE
-20C to +70C
16 TSSOP
Selector Guide appears at end of data sheet, for additional
options.
DS2762
High-Precision Li+ Battery Monitor
www.maxim-ic.com
TOP VIEW
CC
V
IN
V
DD
PIO
V
SS
V
SS
V
SS
PS
IS1
TSSOP
IS2
SNS
SNS
1
2
2
3
2
1
4
5
6
7
8
16
15
14
13
12
11
10
9
SNS
DQ
PLS
DC
FLIP CHIP
(top view)
PLS
DC DQ
CC IS2
V
IN
IS1
V
DD
PIO
PS
SNS
V
SS
1 2 3 4
A
B
C
D
E
F
SNS
PROBE
V
SS
PROBE
1-Wire is registered trademark of Dallas Semiconductor.
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ABSOLUTE MAXIMUM RATINGS
Voltage Range on PLS and
CC Pin, Relative to V
SS
-0.3V to +18V
Voltage Range on PIO Pin, Relative to V
SS
-0.3V to +12V
Voltage Range on Any Other Pin, Relative to V
SS
-0.3V to +6V
Continuous Internal Sense Resistor Current
2.5A
Pulsed Internal Sense Resistor Current
50A for <100s/s, <1000 pulses
Operating Temperature Range
-40C to +85C
Storage Temperature Range
-55C to +125C
Soldering Temperature
See IPC/JEDEC J-STD-020A Specification
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device.
RECOMMENDED DC OPERATING CONDITIONS
(2.5V
V
DD
5.5V, T
A
= -20C to +70C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
V
DD
(Note 1)
2.5
5.5
V
Data Pin
DQ
(Note 1)
-0.3
+5.5
V
DC ELECTRICAL CHARACTERISTICS
(2.5V
V
DD
5.5V, T
A
= -20C to +70C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Active Current
I
ACTIVE
DQ = V
DD
, normal operation
60
90
mA
Sleep Mode Current
I
SLEEP
DQ = 0V, no activity,
PS floating
1
2
mA
Input Logic High: DQ, PIO
V
IH
(Note 1)
1.5
V
Input Logic High:
PS
V
IH
(Note 1)
V
DD
- 0.2V
V
Input Logic Low: DQ, PIO
V
IL
(Note 1)
0.4
V
Input Logic Low:
PS
V
IL
(Note 1)
0.2
V
Output Logic High:
CC
V
OH
I
OH
= -0.1mA (Note 1)
V
PLS
- 0.4V
V
Output Logic High:
DC
V
OH
I
OH
= -0.1mA (Note 1)
V
DD
- 0.4V
V
Output Logic Low:
CC, DC
V
OL
I
OL
= 0.1mA (Note 1)
0.4
V
Output Logic Low: DQ, PIO
V
OL
I
OL
= 4mA (Note 1)
0.4
V
DQ Pulldown Current
I
PD
1
mA
Input Resistance: V
IN
R
IN
5
M
W
Internal Current-Sense Resistor
R
SNS
+25C
20
25
30
m
W
DQ Low to Sleep time
t
SLEEP
2.1
s
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ELECTRICAL CHARACTERISTICS: PROTECTION CIRCUITRY
(2.5V
V
DD
5.5V, T
A
= 0C to +50C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
4.325
4.350
4.375
Overvoltage Detect
V
OV
(Notes 1, 2)
4.250
4.275
4.300
V
Charge Enable
V
CE
(Note 1)
4.10
4.15
4.20
V
Undervoltage Detect
V
UV
(Note 1)
2.5
2.6
2.7
V
Overcurrent Detect
I
OC
(Note 3)
1.8
1.9
2.0
A
Overcurrent Detect
V
OC
(Note 1, 4)
45
47.5
50
mV
Short-Circuit Detect
I
SC
(Note 3)
5.0
8.0
11
A
Short-Circuit Detect
V
SC
(Note 1)
150
200
250
mV
Overvoltage Delay
t
OVD
0.8
1
1.2
s
Undervoltage Delay
t
UVD
90
100
110
ms
Overcurrent Delay
t
OCD
5
10
20
ms
Short-Circuit Delay
t
SCD
160
200
240
ms
Test Threshold
V
TP
0.5
1.0
1.5
V
Test Current
I
TST
10
20
40
mA
Recovery Charge Current
I
RC
(Note 5)
0.5
1
2
mA
DS2762 High-Precision Li+ Battery Monitor
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ELECTRICAL CHARACTERISTICS: TEMPERATURE, VOLTAGE, CURRENT
(2.5V
V
DD
5.5V, T
A
= -20C to +50C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Temperature Resolution
T
LSB
0.125
C
Temperature Full-Scale Magnitude
T
FS
127
C
Temperature Error
T
ERR
(Note 6)
3
C
Voltage Resolution
V
LSB
4.88
mV
Voltage Full-Scale Magnitude
V
FS
4.75
V
Voltage Offset Error
V
OERR
(Note 7)
1
LSB
Voltage Gain Error
V
GERR
5
%
(Note 3)
0.625
mA
Current Resolution
I
LSB
(Note 4)
15.625
mV
(Notes 3, 4)
1.9
2.56
A
Current Full-Scale Magnitude
I
FS
(Note 8)
64
mV
Current Offset Error
I
OERR
(Note 9)
1
LSB
(Notes 3, 10)
3
Current Gain Error
I
GERR
(Note 4)
1
%
(Note 3)
0.25
mAhr
Accumulated Current Resolution
q
CA
(Note 4)
6.25
Vhr
Current Sampling Frequency
f
SAMP
1456
Hz
t
ERR1
(Note 11)
1
3
%
Internal Timebase Accuracy
t
ERR2
(Note 11)
6.5
%
EEPROM RELIABILITY SPECIFICATION
(2.5V
V
DD
5.5V, T
A
= -20
C to +70C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Copy to EEPROM Time
t
EEC
2
10
ms
EEPROM Copy Endurance
N
EEC
(Note 12)
25,000
cycles
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ELECTRICAL CHARACTERISTICS: 1-WIRE INTERFACE
(2.5V
V
DD
5.5V, T
A
= -20
C to +70C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Time Slot
t
SLOT
60
120
ms
Recovery Time
t
REC
1
ms
Write 0 Low Time
t
LOW0
60
120
ms
Write 1 Low Time
t
LOW1
1
15
ms
Read Data Valid
t
RDV
15
ms
Reset Time High
t
RSTH
480
ms
Reset Time Low
t
RSTL
480
960
ms
Presence Detect High
t
PDH
15
60
ms
Presence Detect Low
t
PDL
60
240
ms
SWAP Timing Pulse Width
t
SWL
0.2
120
ms
SWAP Timing Pulse Falling Edge to
DC
Release
t
SWOFF
(Note 13)
0
1
ms
SWAP Timing Pulse Rising Edge to
DC
Engage
t
SWON
(Note 13)
0
1
ms
DQ Capacitance
C
DQ
60
pF
Note 1:
All voltages are referenced to V
SS
.
Note 2:
See the Selector Guide section to determine the corresponding part number for each V
OV
value.
Note 3:
Internal current-sense resistor configuration.
Note 4:
External current-sense resistor configuration.
Note 5:
Test conditions are PLS = 4.1V, V
DD
= 2.5V. Maximum current for conditions of PLS = 15V, V
DD
= 0V is 10mA.
Note 6:
Self-heating due to output pin loading and sense resistor power dissipation can alter the reading from ambient conditions.
Note 7:
Voltage offset measurement is with respect to V
OV
at +25C.
Note 8:
The current register supports measurement magnitudes up to 2.56A using the internal sense resistor option and 64mV with the
external resistor option. Compensation of the internal sense resistor value for process and temperature variation can reduce the
maximum reportable magnitude to 1.9A.
Note 9:
Current offset error null to 1LSB typically requires 3.5s in-system calibration by user.
Note 10:
Current gain error specification applies to gain error in converting the voltage difference at IS1 and IS2, and excludes any error
remaining after the DS2762 compensates for the internal sense resistor's temperature coefficient of 3700ppm/
C to an accuracy
of
500ppm/C. The DS2762 does not compensate for external sense resistor characteristics, and any error terms arising from
the use of an external sense resistor should be taken into account when calculating total current measurement error.
Note 11:
Typical value for t
ERR1
is specified at 3.6V and +25
C, max value is specified for 0C to +50C. Max value for t
ERR2
is specified
for -20C to +70C.
Note 12:
Four-year data retention at +70
C.
Note 13:
Typical load capacitance on
DC and CC is 1000pF.
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