SCOPE: CMOS, BUFFERED, MULTIPLYING 8-BIT D/A CONVERTER
Device Type Generic Number Circuit Function
01
MX7524S(x)/883B DAC with .5 LSB
02 MX7524T(x)/883B DAC with .25 LSB
03 MX7524U(x)/883B DAC with .125 LSB
Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:
Outline Letter Mil-Std-1835 Case Outline Package Code
MAXIM SMD
Q E GDIP1-T16 or CDIP2-T16 16 LEAD CERDIP J16
E 2 CQCC1-N20 20 LCC L20
Absolute Maximum Ratings:
V
DD
to GND ..................................................................................................... -.3V, + 17V
V
RFB
to GND ................................................................................................................
25V
V
REF
to GND ................................................................................................................
25V
Digital Input Voltage to GND .......................................................................... -0.3V to V
DD
V
OUT1
, V
OUT2
, 0 to GND ................................................................................... -0.3V to V
DD
Lead Temperature (soldering, 10 seconds) .................................................................... +300
C
Storage Temperature ....................................................................................... -65
C to +150
C
Continuous Power Dissipation ................................................................................ T
A
=
+
70
C
16 pin CERDIP(derate 10mW/
C above +70
C) ......................................................... 800mW
20 pin LCC(derate 9.1mW/
C above +70
C) .............................................................. 727mW
Junction Temperature T
J
........................................................................................... +150
C
Thermal Resistance, Junction to Case,
JC
16 pin CERDIP....................................................................................................... 50
C/W
20 pin LCC ............................................................................................................ 20
C/W
Thermal Resistance, Junction to Ambient,
JA:
16 pin CERDIP.................................................................................................... 100
C/W
20 pin LCC ......................................................................................................... 110
C/W
Recommended Operating Conditions
Ambient Operating Range (T
A
) ................................................................ -55
C to
+
125
C
Supply Voltage Range (V
DD
) ........................................................................... +5V to +15V
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
----------------------------
Electrical Characteristics of MX7524/883B
19-0390
Rev. B
for SMD 5962-87700
Page 2 of
7
TABLE 1. ELECTRICAL TESTS:
TEST
Symbol
CONDITIONS
-55
C <=T
A
<= +125
C 1/
Unless otherwise specified
Group A
Subgroup
Device
type
Limits
Min
Limits
Max
Units
ACCURACY
Resolution
RES
V
DD
=+5V and V
DD
=+15V
1,2,3
All
8.0
Bits
Relative Accuracy
RA
V
DD
=+5V
1,2,3
All
0.5 LSB
Relative Accuracy
RA
V
DD
=+15V
V
DD
=+15V, TA=25
C, NOTE 2
V
DD
=+15V
1,2,3
1
2,3
12
1
2,3
01
02
02
03
03
0.5
0.5
0.25
0.25
0.125
0.5
0.125
LSB
Gain Error NOTE 3
AE
V
DD
=+5V
1
2,3
All
1.0
1.4
%/FSR
Gain Error NOTE 3
AE
V
DD
=+15V
1
2,3
All
0.5
0.6
%/FSR
Power Supply Rejection
PSRR
V
DD
=+5V,
V
DD
=
10%
1
2,3
All
0.08
0.16
%/%
Power Supply Rejection
PSRR
V
DD
=+15V,
V
DD
=
10%
1
2,3
All
0.02
0.04
%/%
Output Leakage Current
I
OUT1
V
DD
=+5V ___ __
DB0-DB7=0V, WR=CS=0V
1
2,3
All
50
400
nA
Output Leakage Current
I
OUT1
V
DD
=+15V ___ __
DB0-DB7=0V, WR=CS=0V
1
2,3
All
50
200
nA
Output Leakage Current
I
OUT2
V
DD
=+5V ___ __
DB0-DB7=V
DD
, WR=CS=0V
1
2,3
All
50
400
nA
Output Leakage Current
I
OUT2
V
DD
=+15V ___ __
DB0-DB7=V
DD
, WR=CS=0V
1
2,3
All
50
200
nA
Input Resistance
R
IN
V
DD
=+5V and +15V
1,2,3
All
5
20 k
Digital Input High
Voltage
V
IH
V
DD
=+5V
V
DD
=+15V
1,2,3
All
2.4
13.5
V
Digital Input Low
Voltage
V
IL
V
DD
=+5V
V
DD
=+15V
1,2,3
All
0.8
1.5
V
Digital Input Leakage
Current
I
IN
V
DD
=+5V
V
IN
=0V or V
DD
1,2,3
All
1.0
10
A
Digital Input Leakage
Current
I
IN
V
DD
=+15V
V
IN
=0V or V
DD
1,2,3
All
1.0
10
A
Supply Current
I
DD
V
DD
=+5V All digital inputs
V
DD
=+15V V
IL
or V
IH
1,2,3
All
2.0
2.0
mA
Supply Current
I
DD
V
DD
=+5V All digital inputs
V
DD
=+15V 0V or V
DD
1,2,3
All
100
500
A
Gain Temperature
Coefficient NOTE 3
TC
AE
V
DD
=+5V
V
DD
=+15V
1,2,3
All
40
10
ppm/
C
----------------------------
Electrical Characteristics of MX7524/883B
19-0390
Rev. B
for SMD 5962-87700
Page 3 of
7
TEST
Symbol
CONDITIONS
-55
C <=T
A
<= +125
C 1/
Unless otherwise specified
Group A
Subgroup
Device
type
Limits
Min
Limits
Max
Units
Feedthrough Error
NOTE 4, NOTE 5
FT
V
DD
=+5V or V
DD
=+15V,
V
REF
=+10V, 100kHz sinewave,
___ __
DB0-DB7=0V, WR=CS=0V
4,5,6
All
50 mVp-p
Digital Input
Capacitance
NOTE 6
C
IN
V
DD
=+5V
V
IN
=0V, DB0-DB7
V
DD
=+15V
4
All
5
20
pF
Digital Input
Capacitance
NOTE 6
C
IN
V
DD
=+5V ___ __
V
IN
=0V, WR, CS
V
DD
=+15V
4
All
5
20
pF
ANALOG INPUTS
Digital Output
Capacitance
NOTE 6
C
OUT1
C
OUT2
V
DD
=+5V and 15V, ___ __
DB0-DB7=V
DD
, WR=CS=0V
4
All
120
30
pF
Digital Output
Capacitance
NOTE 6
C
OUT1
C
OUT2
V
DD
=+5V and 15V, ___ __
DB0-DB7=0V, WR=CS=0V
4
All
30
120
pF
TIMING
Chip select to write
setup time
NOTE 7
t
CS
V
DD
=+5V
V
DD
=+15V
9,10,11
All
240
150
ns
Chip select to write
hold time
NOTE 7
t
CH
V
DD
=+5V
V
DD
=+15V
9,10,11
All
0
ns
Write pulse width
NOTE 7
t
WR
V
DD
=+5V, t
CS
t
WR
, t
CH
0
V
DD
=+15V, t
CS
t
WR
, t
CH
0
9,10,11
All
240
150
ns
Data setup time
NOTE 7
t
DS
V
DD
=+5V
V
DD
=+15V
9,10,11
All
170
100
ns
Data hold time
NOTE 7
t
DH
V
DD
=+5V
V
DD
=+15V
9,10,11
All
10
10
ns
Output Current
Settling Time
NOTE 4, 8
t
SL
V
DD
=+5V
V
DD
=+15V
9,10,11
All
500
350
ns
NOTE 1: V
OUT
1=V
OUT
2=0V; VREF=+10V, unless otherwise specified.
NOTE 2: Optional Subgroup 12 is used for grading and part selection at +25
C.
NOTE 3: Measured using internal feedback RFB and includes effect of leakage current and gain TC.
NOTE 4: Guaranteed, if not tested.
NOTE 5: Feedthrough error can be reduced by connecting the metal lid to ground.
NOTE 6: Subgroup 4 (C
IN
and C
OUT
measurements) shall be measured only for the inital test and after
process or design changes which may affect capacitance.
NOTE 7: Timing in accordance with Write Cycle Timing Diagram in Commercial Datasheet. ___ __
NOTE 8: ROUT1 load=100
, CEXT=13pF. DB0-DB7=0V to V
DD
or V
DD
to 0V, WR, CS=0V.
Extrapolated: tS(
1/2LSB)=tpD+6.2T, where T=the measured first time constant of the final RC
delay.
----------------------------
Electrical Characteristics of MX7524/883B
19-0390
Rev.B
for SMD 5962-87700
Page 4 of
7
MODE SELECTION TABLE:
__
CS
__
WR
MODE
DAC Response
L
L
Write
DAC responds to data bus
(DB0-BD7) inputs
H
X
X
H
Hold
Hold
Data bus (DB0-DB7) is locked
out; DAC holds last data
present when ___ __
WR or CS
assumed HIGH state
L = Low state, H = High state, X = Don't care
ORDERING INFORMATION:
Package
Pkg. Code
Maxim Part Number
SMD Number
01
16 pin CERDIP
J16
MX7524SQ/883B
5962-8770001EA
01
20 pin LCC
L20
MX7524SE/883B
5962-87700012C
02
16 pin CERDIP
J16
MX7524TQ/883B
5962-8770002EA
02
20 pin LCC
L20
MX7524TE/883B
5962-87700022C
03
16 pin CERDIP
J16
MX7524UQ/883B
5962-8770003EA
03
20 pin LCC
L20
MX7524UE/883B
5962-87700032C
TERMINAL CONNECTIONS:
J16
L20
Pin
1
OUT1
NC
2
OUT2
OUT1
3
GND
OUT2
4
DB7(MSB)
GND
5
DB6
DB7(MSB)
6
DB5
NC
7
DB4
DB6
8
DB3
DB5
9
DB2
DB4
10
DB1
DB3
11
DB0(LSB)
NC
12
__
CS
DB2
13
___
WR
DB1
14
V
DD
DB0(LSB)
15
VREF
__
CS
16
RFB
NC
17
___
WR
18
V
DD
19
VREF
20
RFB
----------------------------
Electrical Characteristics of MX7524/883B
19-0390
Rev. B
for SMD 5962-87700
Page 5 of
7
QUALITY ASSURANCE
Sampling and inspection procedures shall be in accordance with MIL-Prf-38535, Appendix A as specified in Mil-
Std-883.
Screening shall be in accordance with Method 5004 of Mil-Std-883. Burn-in test Method 1015:
1. Test Condition, A, B, C, or D.
2. TA = +125
C minimum.
3. Interim and final electrical test requirements shall be specified in Table 2.
Quality conformance inspection shall be in accordance with Method 5005 of Mil-Std-883, including Groups A, B,
C, and D inspection.
Group A inspection:
1. Tests as specified in Table 2.
2. Selected subgroups in Table 1, Method 5005 of Mil-Std-883 shall be omitted.
Group C and D inspections:
a. End-point electrical parameters shall be specified in Table 1.
b. Steady-state life test, Method 1005 of Mil-Std-883:
1. Test condition A, B, C, D.
2. TA = +125
C, minimum.
3. Test duration, 1000 hours, except as permitted by Method 1005 of Mil-Std-883.
TABLE 2. ELECTRICAL TEST REQUIREMENTS
Mil-Std-883 Test Requirements
Subgroups
per Method 5005, Table 1
Interim Electric Parameters
Method 5004
1
Final Electrical Parameters
Method 5005
1*, 2, 3
Group A Test Requirements
Method 5005
1, 2, 3, 4, 5, 6, 9, 10**, 11**, 12
Group C and D End-Point Electrical Parameters
Method 5005
1
* PDA applies to Subgroup 1 only.
** Subgroups 10 and 11, if not tested shall be guaranteed to the limits specified in Table 1.
----------------------------
Electrical Characteristics of MX7524/883B
19-0390
Rev. B
for SMD 5962-87700
Page 6 of
7
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