1N4151
500mW 75 Volt Silicon
Epitaxial Diode
DO-35
Features
Low Current Leakage
Compression Bond Construction
Low Cost
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.166
---
4.2
B
---
.079
---
2.00
C
---
.020
---
.52
D
1.000
---
25.40
---
Maximum Ratings
Operating Temperature: -55
C to +150
C
Storage Temperature: -55
C to +150
C
Maximum Thermal Resistance; 35
C/W Junction To Ambient
Electrical Characteristics @ 25
C Unless Otherwise Specified
Reverse Voltage
V
RM
75V
DC Blocking Voltage
V
R
50V
Average Rectified
Current
I
O
150mA
Resistive Load
f > 50Hz
Power Dissipation
P
TOT
500mW
Junction
Temperature
T
J
150
C
Peak Forward Surge
Current
I
FSM
500mA
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
V
F
1.0V
I
FM
= 50mA;
T
J
= 25
C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
50nA
V
R
=50Volts
T
J
= 25
C
Typical Junction
Capacitance
C
J
2pF
Measured at
1.0MHz, V
R
=4.0V
Reverse Recovery
Time
T
rr
4nS
I
F
=10mA
V
R
= 6V
R
L
=100
*Pulse test: Pulse width 300
sec, Duty cycle 2%
A
B
C
D
D
Cathode
Mark
www.
mccsemi
.com
omponents
21201 Itasca Street Chatsworth
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Admissable Power Dissipation - MilliWatts versus
Ambient Temperature -
C
Figure 2
Forward Derating Curve
0
175
50
75
100
125
0
100
200
300
Single Phase, Half Wave
60Hz Resistive or Inductive Load
MilliWatts
C
150
400
500
600
Junction Capacitance - pF versus
Reverse Voltage - Volts
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
Figure 1
Typical Forward Characteristics
40
60
200
100
MilliAmps
.4
.6
.8
1.0
1.2
1.4
.1
.2
.4
.6
1
2
4
6
10
20
25
C
Volts
Figure 3
Junction Capacitance
.1
.2
1
.4
2
10
20
40
4
100
200
.1
.2
.6
1
2
10
pF
Volts
6
4
.4
400
1000
T
J
=25
C
1N4151
M C C
www.
mccsemi
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1
100
4
0
100
200
300
8
Figure 5
Peak Forward Surge Current
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
MilliAmps
Cycles
2
6
10
20
60 80
40
400
500
600
Figure 4
Typical Reverse Characteristics
Instantaneous Reverse Leakage Current - NanoAmperes versus
Junction Temperature -
C
T
J
40
60
200
100
NanoAmps
20
120
40
60
80
100
.1
.2
.4
.6
1
2
4
6
10
20
T
A
=25
C
400
600
1000
140
T
A
=100
C
1N4151
www.
mccsemi
.com
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