HDBS101G
THRU
HDBS107G
1.0 AMP. Glass
Passivated Bridge
High Efficient Rectifier
50 to 1000 Volts
Features
High Forward Surge Capability
Ideal for printed circuit boards
High Temperature Soldering: 250
o
C for 10 seconds
Reliable low cost construction utilizing molded plastic technique
Maximum Ratings
Operating Temperature: -55
C to +150
C
Storage Temperature: -55
C to +150
C
For Capacitive Load, Derate Current by 20%
MCC
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum DC
Blocking
Voltage
HDBS101G 50V 35V 50V
HDBS102G 100V 70V 100V
HDBS103G 200V 140V 200V
HDBS104G 400V 280V 400V
HDBS105G 600V 420V 600V
HDBS106G 800V 560V 800V
HDBS107G 1000V 700V 1000V
Electrical Characteristics @ 25
C Unless Otherwise Specified
Average Forward
Current I
F(AV)
1.0 A T
C
= 40
C
Peak Forward Surge
Current I
FSM
50A
Maximum
Instantaneous
Forward Voltage
HDBS101G-103G
HDBS104G
HDBS105G-107G
V
F
1.0V
1.3V
1.7V
I
FM
= 1.0A;
T
C
= 25
C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
5.0
A
500uA
T
C
= 25
C
T
C
= 125
C
Maximum Reverse
Recovery Time
HDBS101G-104G
HDBS105G-107G
T
rr
50ns
75ns
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Suggested Solder Pad
Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
C .040 .060 1.02 1.52
A .320 .335 8.13 8.50
B .245 .255 6.20 6.50
E .120 .130 3.05 3.30
D .386 .404 9.80 10.3
G .00
3 .013 0.076 0.33
H .195 .205 5.00 5.20
K .040 .047 1.02 1.20 TYP
.047"
.060"
.205"
.344"
SDB-1
www.
mccsemi
.com
8.3ms, half sine
T
J
=150
o
C
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
M C C
B
C
D
A
E
G
H
K
Notch in Case
+
-
Version: 3 2003/01/30
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.2- MAXIMUM FORWARD
CURRENT DERATING CURVE
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
PEAK
FOR
W
ARD
SURGE
CURRENT
.
(A)
1
2
5
10
20
100
50
10
0
15
20
30
25
35
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
JEDEC Method
FIG.4- TYPICAL FORWARD CHARACTERISTICS
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
.
(A)
.2
.4
.6
.8
1.0
1.2
1.4
0.001
0.01
0.1
1.0
10
FORWARD VOLTAGE. (V)
Tj=25 C
0
HD
BS
101G
~H
DB
S104G
HDB
S105G
HDB
S106G~HDB
S107G
FIG.6- TYPICAL JUNCTION CAPACITANCE
JUNCTION
CAP
ACIT
ANCE.(pF)
.1
.5
1
5
2
10
20
50
100 200
500
10
0
20
30
40
50
60
70
REVERSE VOLTAGE. (V)
Tj=25 C
0
HDBS1
01G~H
DBS10
5G
HDBS106G~HDB
S107G
FIG.3- TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS
REVERSE
CURRENT
.(
A
)
0
20
40
60
80
100
120
0.1
1.0
10
100
1000
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
0
Tj=125 C
0
A
VERAGE
FOR
W
ARD
CURRENT
.(
A
)
20
40
60
80
100
120
140 150
0
0.5
1.0
AMBIENT TEMPERATURE. ( C)
o
60Hz RESISTIVE OR
INDUCTIVE LOAD
Copper Pauls
.51" x .51"
(13mm x 13mm)
.06" (1.5mm)
PCB
M C C
www.
mccsemi
.com
HDBS101G thru HDBS107G
Version: 3 2003/01/30
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