THRU
10 Am p
Schott ky Barrier
Rectifier
Features
Maximum Ratings
Operating Temperature: -55
C to +150
C
Storage Temperature: -55
C to +175
C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
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.
mccsemi
.com
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
30-60 Volts
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220AB
PIN
1
3
2
MBR1035CT
MBR1035CT
35V 24.5V 35V
MBR1040CT
MBR1040CT
40V 28V 40V
MBR1045CT
MBR1045CT
45V 31.5V 45V
MBR1050CT
MBR1050CT
50V 35V 50V
MBR1060CT
MBR1060CT
60V 42V 60V
MBR1030CT
MBR1030CT
30V 21V 30V
MBR1030CT
MBR1060CT
Electrical Characteristics @ 25
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
10A T
C
= 105
C
Maximum Forward
Voltage Drop Per
Element
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
*Pulse test: Pulse width 300
sec, Duty cycle
2%
T
J
= 125
C
Peak Forward Surge
Current
I
FSM
125A 8.3ms, half sine
15mA
0.1mA T
J
= 25
C
V
F
.70V I
FM
= 5A
T
J
=
25
C
MBR1030CT-45CT
MBR1050CT-60CT
MBR1030CT-45CT
MBR1050CT-60CT
.80V
.57V
.65V
I
FM
= 5A
T
J
=
125
C
Typical Junction
Capacitance
MBR1030CT-45CT
MBR1050CT-60CT
220pF
170pF
C
J
Measured at
1.0MHz, V
R
=4.0V
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
M C C
RATING AND CHARACTERISTIC CURVES
MBR10
30CT
thru MBR1060CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
ARD
S
U
R
G
E CURRENT
,
AM
PERES
1
5
10
50
100
2
20
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERA
G
E
F
O
R
W
A
R
D
C
U
R
R
E
N
T
A
M
P
E
R
E
S
25
75
100
125
150
4
0
50
16
175
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
I
N
ST
AN
T
A
N
E
O
U
S
R
E
V
E
R
S
E
CU
RR
E
N
T
,
(
mA
)
20
40
120
140
0.001
0.1
1.0
100
10
60
80
100
T
J
= 125 C
0.01
T
J
= 25 C
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
12
0
8
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
I
N
S
T
A
N
T
A
NEOUS
F
O
RW
ARD C
U
R
R
E
N
T
,(
A
)
0.2
0.3
0.7
0.8
1.0
10
100
0.4
0.5
0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
I
N
S
T
A
N
T
A
NEOUS
F
O
RW
ARD C
U
R
R
E
N
T
,(
A
)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CA
PA
CIT
A
N
C
E
,
(
p
F
)
REVERSE VOLTAGE , VOLTS
10
1
100
1000
100
10
0.1
CASE TEMPERATURE , C
0
4
MBR1050CT ~ MBR1060CT
MBR1030CT ~ MBR1045CT
MBR1030CT ~ MBR1045CT
MBR1050CT ~ MBR1060CT
T
J
= 25 C, f= 1MHz
www.
mccsemi
.com
M C C
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