MBR3030CT
THRU
MBR3060CT
30 Amp
Rectifier
30 to 60 Volts
Features
Operating Temperature: -
55
C to +150
C
Storage Temperature: -
55
C to +1
75
C
MCC
Part Number
Maximum
Rcurrent
Peak Reverse
Voltage
Maximum
RMS Voltage
Maximum DC
Blocking
Voltage
MB
R3030CT 30V 21V 30V
MB
R3035CT 35V 24.5V 35V
MB
R3040CT 40V 28V 40V
MB
R3045CT 45V 31.5V 45V
MB
R3050CT 50V 35V 50V
MBR30
60CT 60V 42V 60V
www.
mccsemi
.com
Schottky Barrier
Maximum Ratings
Metal of silicon
rectifier, majority carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
INCHES MM
A
.560 .625 14.22 15.88
B .380 .
420 9.65 10.67
C .
100 .135 2.54 3.43
D .
230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
Electrical Characteristics @ 25
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
30 A T
C
=
1
00
C
Peak Forward Surge
Current
I
FSM
200A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
0.2
mA
T
J
= 25
C
Typical Junction
Capacitance
C
J
Measured at
1.0MHz, V
R
=4.0V
MBR30
30CT-3045CT
MBR30
50CT-3060CT
.
84 V
.
95 V
MBR3030CT-3045CT
MBR3050CT-3060CT
*Pulse Test: Pulse Width 300sec, Duty Cycle 1%
400pF
450pF
TO-220AB
MBR3030CT-3045CT
MBR3050CT-3060CT
.7
2 V
.8
5 V
PIN
1
3
2
T
J
=
125
C
I
FM
=
30.0A;
T
J
= 25
C
V
F
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
M C C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
SUR
G
E
CURRENT
,
AM
PERES
1
5
10
50
100
2
20
0
50
100
150
200
250
300
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAG
E F
O
R
W
ARD C
U
R
R
E
N
T
AM
PERES
25
75
100
125
150
10
0
50
40
175
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
I
N
ST
ANT
A
NEO
U
S
REVERSE CURR
E
N
T
,
(
m
A
)
20
40
120
140
0.001
0.1
1.0
100
10
60
80
100
T
J
= 125 C
0.01
T
J
= 25 C
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
30
0
20
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
CURRENT
,
(
A)
0.2
0.3
0.7
0.8
1.0
10
100
0.4
0.5
0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
CURRENT
,
(
A)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
MBR3030CT ~ MBR3045CT
MBR3050CT ~ MBR3060CT
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACI
T
ANCE , (
p
F
)
REVERSE VOLTAGE , VOLTS
10
1
100
10000
1000
100
0.1
CASE TEMPERATURE , C
0
MBR3030CT ~ MBR3045CT
MBR3030CT ~ MBR3045CT
MBR3030CT ~ MBR3045CT
MBR3030CT ~ MBR3045CT
MBR3030CT ~ MBR3045CT
MBR3030CT ~ MBR3045CT
MBR3030CT ~ MBR3045CT
MBR3030CT ~ MBR3045CT
MBR3050CT ~ MBR3060CT
MBR3030CT ~ MBR3045CT
4
T
J
= 25 C, f= 1MHz
M C C
www.
mccsemi
.com
RATING AND CHARACTERISTIC CURVES
MBR3030CT thru MBR3060CT
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