2SD1616A
NPN
SILICON
TRANSISTOR
DESCRIPTION
2SD1616A is NPN silicon planar
transistor designed for use in driver and
output stages of AF amplifier, general
purpose application.
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
V
CEO
60V
Collector-Base Voltage
V
CBO
120V
Emitter-Base Voltage
V
EBO
6V
Collector Current Continuous
I
C
1A
Total Power Dissipation @ Ta=25
o
C
P
tot
0.65W
Operating & Storage Junction Temperature
T
j
,T
stg
-55 to +150
o
C
ELECTRICAL CHARACTERISTICS (Ta=25
o
C)
PARAMETER
SYMBOL MIN
MAX UNIT
CONDITIONS
Collector Cutoff Current
I
CBO
100
nA
V
CB
=60V I
E
=0
Emitter Cutoff Current
I
EBO
100
nA
V
EB
=6V
I
C
=0
D.C. Current Gain
H
FE *
170
350
V
CE
=2V
I
C
=100mA
D.C. Current Gain
H
FE *
45
V
CE
=2V
I
C
=1A
Base-Emitter Voltage
V
BE *
600
700
mV
V
CE
=2V
I
C
=50mA
Collector-Emitter Saturation Voltage
V
CE(sat) *
0.5
V
I
C
=1A
I
B
=50mA
Base-Emitter Saturation Voltage
V
BE(sat) *
1.2
V
I
C
=1A
I
B
=50mA
Output Capacitance
C
ob
19
TYP.
pF
V
CB
=10V I
E
=0
Gain Bandwidth Product
f
T
100
MHz V
CE
=2V
I
C
=100mA
Turn-On Time
t
on
0.07
TYP.
s
Vcc=10V
I
C
=100mA
Storage Time
t
stg
0.95
TYP.
s
I
B1
=-I
B2
=10mA
Fall Time
t
f
0.07
TYP.
s
V
BE(off)
=-2 to 3V
* Pulse test PW 350
s, duty cycle 2%.
MICRO
ELECTRONI
C
S
12.7
(0.5)
min.
4.6
(0.18)
10
2.54
(0.1)
0.51
(0.02)
Bottom view
0.45
(0.018)
Unit: mm(inch)
TO-92B
0.4
(0.016)
4.68
(0.18)
3.58
(0.14)
E
B C
G/F, 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong.
Kwun Tong P.O. BOX 69477, Hong Kong. TEL: (852) 23430181 FAX: (852) 23410321
HOMEPAGE: http://www.microelectr.com.hk E-MAIL ADDRESS: common@microelectr.com.hk
MICRO ELECTRONICS LTD.
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