BU208D/508D/508DFI
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPES
s
HIGH VOLTAGE CAPABILITY
s
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
s
JEDEC TO-3 METAL CASE
s
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured
using
Multiepitaxial
Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
INTERNAL SCHEMATIC DIAGRAM
June 1996
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Unit
V
CES
Collector-Emit ter Voltage (V
BE
= 0)
1500
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
700
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
10
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current (t
p
< 5 ms)
15
A
TO - 3
TO - 218
ISOW ATT218
P
tot
T otal Dissipat ion at T
c
= 25
o
C
150
125
50
W
T
s tg
Storage Temperat ure
-65 to 150 -65 to 150
-65 t o 150
o
C
T
j
Max. O perat ing Junction Temperature
150
150
150
o
C
1
2
3
TO-218
ISOWATT218
1
2
3
1
2
TO-3
1/8
THERMAL DATA
TO-3
T O-218
ISOW AT T218
R
thj -ca se
Thermal Resistance Junction-case
Max
1
1
2.5
o
C/ W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
I
CES
Collector Cut -off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V
T
j
= 125
o
C
1
2
mA
mA
I
EBO
Emitter Cut- off Current
(I
C
= 0)
V
EB
= 5 V
300
mA
V
CE(sat)
Collector-Emitt er
Sat uration Voltage
I
C
= 4.5 A
I
B
= 2 A
1
V
V
CEO(s us)
Collector-Emitt er
Sustaining Voltage
I
C
= 100 m A
700
V
V
BE(sat )
Base-Emitter
Sat uration Voltage
I
C
= 4.5 A
I
B
= 2 A
1.3
V
t
s
t
f
INDUCT IVE LOAD
Storage Time
Fall Time
I
C
= 4.5 A
h
F E
= 2.5
V
CC
= 140 V
L
C
= 0.9 mH
L
B
= 3
H
7
550
s
ns
V
F
Diode F orward Volt age
I
F
= 4 A
2
V
f
T
Transition Frequency
I
C
= 0.1 A
V
CE
= 5 V
f = 5 MHz
7
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area (TO-3)
Safe Operating Area (TO-218/ISOWATT218)
BU208D/508D/508DFI
2/8
DC Current Gain
Base Emitter Saturation Voltage
Switching Time Inductive Load (see figure 1)
Collector Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Percentance vs. Case
BU208D/508D/508DFI
3/8
Figure 1: Inductive Load Switching Test Circuits
BU208D/508D/508DFI
4/8
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.7
0.460
B
0.96
1.10
0.037
0.043
C
1.70
0.066
D
8.7
0.342
E
20.0
0.787
G
10.9
0.429
N
16.9
0.665
P
26.2
1.031
R
3.88
4.09
0.152
0.161
U
39.50
1.555
V
30.10
1.185
E
B
R
C
D
A
P
G
N
V
U
O
P003N
TO-3 (H) MECHANICAL DATA
BU208D/508D/508DFI
5/8
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