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Электронный компонент: MCP111T-315TT

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2004 Microchip Technology Inc.
DS21889B-page 1
MCP111/112
Features
Ultra-low supply current: 1.75 A (max.)
Precision monitoring options of:
- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,
4.38V and 4.63V
Resets microcontroller in a power-loss event
Active-low V
OUT
pin:
- MCP111 active-low, open-drain
- MCP112 active-low, push-pull
Available in SOT23-3, TO-92 and SC70 packages
Temperature Range:
- Extended: 40C to +125C
(except MCP1XX-195)
- Industrial: 40C to +85C (MCP1XX-195 only)
Applications
Critical C and P Power-monitoring Applications
Computers
Intelligent Instruments
Portable Battery-Powered Equipment
Block Diagram
Description
The MCP111/112 are voltage-detecting devices
designed to keep a microcontroller in reset until the
system voltage has reached, and stabilized, at the
appropriate level for reliable system operation. These
devices also operate as protection from brown-out
conditions when the system supply voltage drops
below a safe operating level. The MCP111 and
MCP112 are available in eight different trip voltages.
The MCP111 has an open-drain output with an active-
low pin (V
OUT
). This device will assert V
OUT
when the
voltage on the V
DD
pin is below the trip-point voltage.
The MCP112 has a push-pull output and will assert an
active-low signal (V
OUT
pin) when the voltage on the
V
DD
pin is below the trip-point voltage.
During operation, the output (V
OUT
) remains at a logic-
high as long as V
DD
is greater than the specified
threshold voltage. When V
DD
falls below the voltage
trip point, V
OUT
is driven low.
Package Types
V
DD
Comparator
+
Output
Driver
V
OUT
Band Gap
Reference
V
SS
SOT23-3/SC-70
V
DD
V
OUT
MCP
1
1
1
/1
12
1
2
3
V
SS
V
SS
V
OUT
TO-92
V
DD
Micropower Voltage Detector
MCP111/112
DS21889B-page 2
2004 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V
Input current (V
DD
) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Output current (RST) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Rated Rise Time of V
DD
. . . . . . . . . . . . . . . . . . . . . . 100V/s
All inputs and outputs w.r.t. V
SS
. . . . . 0.6V to (V
DD
+ 1.0V)
Storage temperature . . . . . . . . . . . . . . . . . . 65C to + 150C
Ambient temp. with power applied . . . . . . . 40C to + 125C
Maximum Junction temp. with power applied . . . . . . . . 150C
ESD protection on all pins
. . . . . . . . . . . . . . . . . . . . . . . . .
2 kV
Notice: Stresses above those listed under "Maximum Rat-
ings" may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111),
T
A
= 40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Operating Voltage Range
V
DD
1.0
--
5.5
V
Specified V
DD
Value to V
OUT
low
V
DD
1.0
--
V
I
RST
= 10 A, V
RST
< 0.2V
Operating Current
I
DD
--
< 1
1.75
A
V
DD
Trip Point
MCP1XX-195
V
TRIP
1.872
1.900
1.929
V
T
A
= +25C (Note 1)
1.853
1.900
1.948
V
T
A
= -40C to +85C (Note 2)
MCP1XX-240
2.285
2.320
2.355
V
T
A
= +25C (Note 1)
2.262
2.320
2.378
V
Note 2
MCP1XX-270
2.591
2.630
2.670
V
T
A
= +25C (Note 1)
2.564
2.630
2.696
V
Note 2
MCP1XX-290
2.857
2.900
2.944
V
T
A
= +25C (Note 1)
2.828
2.900
2.973
V
Note 2
MCP1XX-300
2.886
2.930
2.974
V
T
A
= +25C (Note 1)
2.857
2.930
3.003
V
Note 2
MCP1XX-315
3.034
3.080
3.126
V
T
A
= +25C (Note 1)
3.003
3.080
3.157
V
Note 2
MCP1XX-450
4.314
4.380
4.446
V
T
A
= +25C (Note 1)
4.271
4.380
4.490
V
Note 2
MCP1XX-475
4.561
4.630
4.700
V
T
A
= +25C (Note 1)
4.514
4.630
4.746
V
Note 2
V
DD
Trip Point Tempco
T
TPCO
--
100
--
ppm/
C
Threshold Hysteresis
(
min. = 1%, max = 6%)
MCP1XX-195
V
HYS
0.019
--
0.114
V
T
A
= +25C
MCP1XX-240
0.023
--
0.139
V
MCP1XX-270
0.026
--
0.158
V
MCP1XX-290
0.029
--
0.174
V
MCP1XX-300
0.029
--
0.176
V
MCP1XX-315
0.031
--
0.185
V
MCP1XX-450
0.044
--
0.263
V
MCP1XX-475
0.046
--
0.278
V
Note
1:
Trip point is 1.5% from typical value.
2:
Trip point is 2.5% from typical value.
2004 Microchip Technology Inc.
DS21889B-page 3
MCP111/112
FIGURE 1-1:
Timing Diagram.
AC CHARACTERISTICS
V
OUT
Low-level Output Voltage
V
OL
--
--
0.4
V
I
OL
= 500 A, V
DD
= V
TRIP(MIN)
V
OUT
High-level Output Voltage
V
OH
V
DD
0.6
--
--
V
I
OH
= 1 mA, For only MCP112
(push-pull output)
Open-Drain Output Leakage Current
(MCP111 only)
I
OD
--
0.1
--
A
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111),
T
A
= 40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note
1:
Trip point is 1.5% from typical value.
2:
Trip point is 2.5% from typical value.
Electrical Specifications: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111), T
A
= 40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
V
DD
Detect to V
OUT
Inactive
t
RPU
--
90
--
s
Figure 1-1 and C
L
= 50 pF
(Note 1)
V
DD
Detect to V
OUT
Active
t
RPD
--
130
--
s
V
DD
ramped from V
TRIP(MAX)
+
250 mV down to V
TRIP(MIN)
250 mV, per Figure 1-1,
C
L
= 50 pF (Note 1)
V
OUT
Rise Time After V
OUT
Active
t
RT
--
5
--
s
For V
OUT
10% to 90% of final
value per Figure 1-1, C
L
= 50 pF
(Note 1)
Note 1:
These parameters are for design guidance only and are not 100% tested.
1V
1V
V
TRIP
V
DD
V
OUT
t
RPU
V
OH
t
RT
t
RPD
V
OL
MCP111/112
DS21889B-page 4
2004 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111), T
A
= 40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
40
--
+85
C
MCP1XX-195
Specified Temperature Range
T
A
40
--
+125
C
Except MCP1XX-195
Maximum Junction Temperature
T
J
--
--
+150
C
Storage Temperature Range
T
A
65
--
+150
C
Package Thermal Resistances
Thermal Resistance, 3L-SOT23
JA
--
336
--
C/W
Thermal Resistance, 3L-SC-70
JA
--
340
--
C/W
Thermal Resistance, 3L-TO92
JA
--
131.9
--
C/W
2004 Microchip Technology Inc.
DS21889B-page 5
MCP111/112
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 k
(only MCP111;
see Figure 4-1), T
A
= 40C to +125C.
FIGURE 2-1:
I
DD
vs. Temperature
(MCP111-195).
FIGURE 2-2:
I
DD
vs. Temperature
(MCP112-300).
FIGURE 2-3:
I
DD
vs. Temperature
(MCP112-475).
FIGURE 2-4:
I
DD
vs. V
DD
(MCP111-195).
FIGURE 2-5:
I
DD
vs. V
DD
(MCP112-300).
FIGURE 2-6:
I
DD
vs. V
DD
(MCP112-475).
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-40
-20
0
20
40
60
80
100
120
140
Temperature (C)
I
DD
(uA
)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
-40
-20
0
20
40
60
80
100
120
140
Temperature (C)
I
DD
(uA
)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
MCP112-300
5.5V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-40
-20
0
20
40
60
80
100
120
140
Temperature (C)
I
DD
(uA
)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP112-475
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0
2.0
3.0
4.0
5.0
6.0
V
DD
(V)
I
DD
(uA
)
-40C
+25C
+85C
+125C
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0
2.0
3.0
4.0
5.0
6.0
V
DD
(V)
I
DD
(uA
)
MCP112-300
-40C
+25C
+85C
+125C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0
2.0
3.0
4.0
5.0
6.0
V
DD
(V)
I
DD
(uA
)
MCP112-475
-40C
+25C
+85C
+125C