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Электронный компонент: MCP6002E

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2003 Microchip Technology Inc.
DS21733D-page 1
M
MCP6001/2/4
Features
Available in SC-70-5 and SOT-23-5 packages
1 MHz Gain Bandwidth Product (typ.)
Rail-to-Rail Input/Output
Supply Voltage: 1.8V to 5.5V
Supply Current: I
Q
= 100 A (typ.)
90 Phase Margin (typ.)
Temperature Range:
- Industrial: -40C to +85C
- Extended: -40C to +125C
Available in Single, Dual and Quad Packages
Applications
Automotive
Portable Equipment
Photodiode Pre-amps
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
Available Tools
Spice Macro Models (at www.microchip.com)
FilterLab
Software (at www.microchip.com)
Typical Application
Description
The Microchip Technology Inc. MCP6001/2/4 family of
operational amplifiers (op amps) is specifically
designed for general-purpose applications. This family
has a 1 MHz gain bandwidth product and 90 phase
margin (typ.). It also maintains 45 phase margin (typ.)
with 500 pF capacitive load. This family operates from
a single supply voltage as low as 1.8V, while drawing
100 A (typ.) quiescent current. Additionally, the
MCP6001/2/4 supports rail-to-rail input and output
swing, with a common mode input voltage range of
V
DD
+ 300 mV to V
SS
- 300 mV. This family of opera-
tional amplifiers is designed with Microchip's
advanced CMOS process.
The MCP6001/2/4 family is available in the industrial
and extended temperature ranges. It also has a power
supply range of 1.8V to 5.5V.
Package Types
R
1
V
OUT
R
2
V
IN
V
DD
+
-
Gain
1
R
1
R
2
------
+
=
Non-Inverting Amplifier
MCP6001
V
REF
V
SS
4
MCP6001
1
2
3
-
+
5 V
DD
V
IN
V
OUT
V
SS
V
IN
+
SC-70-5, SOT-23-5
MCP6002
PDIP, SOIC, MSOP
MCP6004
V
INA
+
V
INA
V
SS
1
2
3
4
14
13
12
11
-
V
OUTA
+ -
+
A
D
V
DD
V
OUTD
V
IND
V
IND
+
10
9
8
5
6
7
V
OUTB
V
INB
V
INB
+
V
INC
+
V
INC
V
OUTC
+
-
B
C
-
+
PDIP, SOIC, TSSOP
V
INA
+
V
INA
V
SS
1
2
3
4
8
7
6
5
-
V
OUTA
+ -
+
A
B
V
DD
V
OUTB
V
INB
V
INB
+
4
1
2
3
-
+
5 V
DD
V
OUT
V
SS
MCP6001R
SOT-23-5
4
1
2
3
-
+
5 V
SS
V
IN
V
OUT
V
DD
V
IN
+
MCP6001U
SOT-23-5
4
1
2
3
-
+
5 V
DD
V
OUT
V
IN
+
V
SS
V
IN
1 MHz Bandwidth Low Power Op Amp
MCP6001/2/4
DS21733D-page 2
2003 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
V
DD
- V
SS
.........................................................................7.0V
All Inputs and Outputs ...................... V
SS
-0.3V to V
DD
+0.3V
Difference Input Voltage ....................................... |V
DD
- V
SS
|
Output Short Circuit Current ..................................continuous
Current at Input Pins ....................................................2 mA
Current at Output and Supply Pins ............................30 mA
Storage Temperature ....................................-65C to +150C
Maximum Junction Temperature (T
J
) .......................... +150C
ESD Protection On All Pins (HBM;MM)
............... 4 kV; 200V
Notice: Stresses above those listed under "Maximum Rat-
ings" may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
PIN FUNCTION TABLE
DC ELECTRICAL SPECIFICATIONS
Name
Function
V
IN
+, V
INA
+, V
INB
+, V
INC
+,
V
IND
+
Non-inverting Inputs
V
IN
, V
INA
, V
INB
, V
INC
,
V
IND
Inverting Inputs
V
DD
Positive Power Supply
V
SS
Negative Power Supply
V
OUT
, V
OUTA
, V
OUTB
,
V
OUTC
, V
OUTD
Outputs
Electrical Characteristics: Unless otherwise indicated, T
A
= +25C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, R
L
= 10 k
to V
DD
/2, and V
OUT
~ V
DD
/2.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
V
OS
-7.0
--
+7.0
mV
V
CM
= V
SS
Input Offset Drift with Temperature
V
OS
/
T
A
--
2.0
--
V/C
T
A
= -40C to +125C,
V
CM
= V
SS
Power Supply Rejection
PSRR
--
86
--
dB
V
CM
= V
SS
Input Bias Current and Impedance
Input Bias Current:
I
B
--
1.0
--
pA
Industrial Temperature
I
B
--
19
--
pA
T
A
= +85C
Extended Temperature
I
B
--
1100
--
pA
T
A
= +125C
Input Offset Current
I
OS
--
1.0
--
pA
Common Mode Input Impedance
Z
CM
--
10
13
||6
--
||pF
Differential Input Impedance
Z
DIFF
--
10
13
||3
--
||pF
Common Mode
Common Mode Input Range
V
CMR
V
SS
- 0.3
--
V
DD
+ 0.3
V
Common Mode Rejection Ratio
CMRR
60
76
--
dB
V
CM
= -0.3V to 5.3V, V
DD
= 5V
Open-Loop Gain
DC Open-Loop Gain (large signal)
A
OL
88
112
--
dB
V
OUT
= 0.3V to V
DD
- 0.3V,
V
CM
= V
SS
Output
Maximum Output Voltage Swing
V
OL
, V
OH
V
SS
+
25
--
V
DD
- 25
mV
V
DD
= 5.5V
Output Short-Circuit Current
I
SC
--
6
--
mA
V
DD
= 1.8V
--
23
--
mA
V
DD
= 5.5V
Power Supply
Supply Voltage
V
DD
1.8
--
5.5
V
Quiescent Current per Amplifier
I
Q
50
100
170
A
I
O
= 0, V
DD
= 5.5V, V
CM
= 5V
2003 Microchip Technology Inc.
DS21733D-page 3
MCP6001/2/4
AC ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25C, V
DD
= +1.8 to 5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, R
L
= 10 k
to V
DD
/2, and C
L
= 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
--
1.0
--
MHz
Phase Margin
PM
--
90
--
G = +1
Slew Rate
SR
--
0.6
--
V/s
Noise
Input Noise Voltage
E
ni
--
6.1
--
Vp-p
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
e
ni
--
28
--
nV/
Hz f = 1 kHz
Input Noise Current Density
i
ni
--
0.6
--
fA/
Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +5.5V, and V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Industrial Temperature Range
T
A
-40
--
+85
C
Extended Temperature Range
T
A
-40
--
+125
C
Operating Temperature Range
T
A
-40
--
+125
C
(Note)
Storage Temperature Range
T
A
-65
--
+150
C
Thermal Package Resistances
Thermal Resistance, 5L-SC70
JA
--
331
--
C/W
Thermal Resistance, 5L-SOT-23
JA
--
256
--
C/W
Thermal Resistance, 8L-PDIP
JA
--
85
--
C/W
Thermal Resistance, 8L-SOIC (150 mil)
JA
--
163
--
C/W
Thermal Resistance, 8L-SOIC (208 mil)
JA
--
118
--
C/W
Thermal Resistance, 8L-MSOP
JA
--
206
--
C/W
Thermal Resistance, 14L-PDIP
JA
--
70
--
C/W
Thermal Resistance, 14L-SOIC
JA
--
120
--
C/W
Thermal Resistance, 14L-TSSOP
JA
--
100
--
C/W
Note:
The industrial temperature devices operate over this extended temperature range, but with reduced perfor-
mance. In any case, the internal Junction Temperature (T
J
) must not exceed the Absolute Maximum
specification of +150C.
MCP6001/2/4
DS21733D-page 4
2003 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 k
to V
DD
/2, and C
L
= 60 pF.
FIGURE 2-1:
Input Offset Voltage
Histogram.
FIGURE 2-2:
PSRR, CMRR vs.
Frequency.
FIGURE 2-3:
Input Bias Current at +85C
Histogram.
FIGURE 2-4:
CMRR, PSRR vs. Ambient
Temperature.
FIGURE 2-5:
Open-Loop Gain, Phase vs.
Frequency.
FIGURE 2-6:
Input Bias Current at +125C
Histogram.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
Input Offset Voltage (mV)
Percentage of Occurrences
1225 Samples
V
CM
= V
SS
20
30
40
50
60
70
80
90
100
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
Frequency (Hz)
PSRR, CMRR (dB)
PSRR+
CMRR
PSRR-
V
CM
= V
SS
10
100
1k
10k
100k
0%
2%
4%
6%
8%
10%
12%
14%
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Input Bias Current (pA)
Percentage of Occurrences
1230 Samples
V
DD
= 5.5 V
V
CM
= V
DD
T
A
= +85C
70
80
90
100
-50
-25
0
25
50
75
100
125
Ambient Temperature (C)
PSRR, CMRR (dB)
PSRR (V
CM
= V
SS
)
CMRR (V
CM
= -0.3V to +5.3V)
-20
0
20
40
60
80
100
120
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
Frequency (Hz)
Open Loop Gain (dB)
-210
-180
-150
-120
-90
-60
-30
0
Open Loop Phase ()
0.1
1
10
100
10k
100k 1M
10M
Phase
Gain
1k
V
CM
= V
SS
0%
5%
10%
15%
20%
25%
30%
35%
40%
45%
50%
55%
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
Input Bias Current (pA)
Percentage of Occurrences
605 Samples
V
DD
= 5.5 V
V
CM
= V
DD
T
A
= +125C
2003 Microchip Technology Inc.
DS21733D-page 5
MCP6001/2/4
Note: Unless otherwise indicated, T
A
= +25C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 k
to V
DD
/2, and C
L
= 60 pF.
FIGURE 2-7:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-8:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 1.8V.
FIGURE 2-9:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 5.5V.
FIGURE 2-10:
Input Offset Voltage Drift
Histogram.
FIGURE 2-11:
Input Offset Voltage vs.
Output Voltage.
FIGURE 2-12:
Output Short-Circuit Current
vs. Ambient Temperature.
10
100
1,000
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
Frequency (Hz)
Input Noise Voltage Density
(nV/
Hz)
E
ni
= 6.1 V
P-P
, f = 0.1 to 10 Hz
0.1
10
1
100
10k
1k
100k
-700
-600
-500
-400
-300
-200
-100
0
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Common Mode Input Voltage (V)
Input Offset Voltage (V)
V
DD
= 1.8V
T
A
= -40C
T
A
= +25C
T
A
= +85C
T
A
= +125C
-700
-600
-500
-400
-300
-200
-100
0
-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Common Mode Input Voltage (V)
Input Offset Voltage (V)
V
DD
= 5.5V
T
A
= -40C
T
A
= +25C
T
A
= +85C
T
A
= +125C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Input Offset Voltage Drift (V/C)
Percentage of Occurrences
1225 Samples
V
CM
= V
SS
T
A
= -40C to +125C
-200
-150
-100
-50
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
Input Offset Voltage (V)
V
DD
= 1.8V
V
CM
= V
SS
V
DD
= 5.5V
0
5
10
15
20
25
30
35
-50
-25
0
25
50
75
100
125
Ambient Temperature (C)
Output Short Circuit Current
(mA)
-I
SC
, V
DD
= 1.8V
+I
SC
, V
DD
= 1.8V
+I
SC
, V
DD
= 5.5V
-I
SC
, V
DD
= 5.5V