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Электронный компонент: MT28F642D18FN-804BET

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1
4 Meg x 16 Async/Page/Burst Flash Memory
2002, Micron Technology, Inc.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
FLASH MEMORY
MT28F642D18
MT28F642D20
Low Voltage, Extended Temperature
0.18m Process Technology
PIN ASSIGNMENT
59-Ball FBGA
FEATURES
Single device supports asynchronous, page, and
burst operations
Flexible dual-bank architecture
Support for true concurrent operation with zero
latency
Read bank a during program bank b and vice
versa
Read bank a during erase bank b and vice versa
Basic configuration:
One hundred and thirty-five erasable blocks
Bank a (16Mb for data storage)
Bank b (48Mb for program storage)
V
CC
, V
CC
Q, V
PP
voltages
1.70V (MIN), 1.90V (MAX) V
CC
, V
CC
Q
(MT28F642D18 only)
1.80V (MIN), 2.20V (MAX) V
CC
, and
2.25V (MAX) V
CC
Q (MT28F642D20 only)
1.80V (TYP) V
PP
(in-system PROGRAM/ERASE)
12V 5% (HV) V
PP
tolerant (factory programming
compatibility)
Random access time: 70ns @ 1.80V V
CC
1
Burst Mode read access
MAX clock rate: 54 MHz (
t
CLK = 18.5ns)
Burst latency: 70ns @ 1.80V V
CC
and 54 MHz
t
ACLK: 15ns @ 1.80V V
CC
and 54 MHz
Page Mode read access
1
Four-/eight-word page
Interpage read access: 70ns @ 1.80V
Intrapage read access: 30ns @ 1.80V
Low power consumption (V
CC
= 2.20V)
Asynchronous Read < 15mA
Interpage Read < 15mA
Intrapage Read < 5mA
Continuous Burst Read < 10mA
WRITE < 55mA (MAX)
ERASE < 45mA (MAX)
Standby < 50A (MAX)
Automatic power save (APS) feature
Deep power-down < 25A (MAX)
Enhanced write and erase suspend options
Accelerated programming algorithm (APA) in-
system and in-factory
Dual 64-bit chip protection registers for security
purposes
NOTE: See page 7 for Ball Description Table.
See page 50 for mechanical drawing.
Cross-compatible command support
Extended command set
Common flash interface
PROGRAM/ERASE cycle
100,000 WRITE/ERASE cycles per block
OPTIONS
MARKING
Timing
80ns access
-80
70ns access
-70
Frequency
40 MHz
4
54 MHz
5
Boot Block Configuration
Top
T
Bottom
B
Package
59-ball FBGA (8 x 7 ball grid)
FN
Operating Temperature Range
Extended (-40C to +85C)
ET
Part Number Example:
MT28F642D20FN-804 TET
A
B
C
D
E
F
G
1 2 3 4 5 6 7 8
Top View
(Ball Down)
A11
A12
A13
A15
V
CC
Q
V
SS
DQ7
A18
A17
A19
WP#
DQ1
DQ9
V
CC
Q
V
PP
RST#
WE#
DQ12
DQ2
DQ10
DQ3
V
SS
A20
A21
WAIT#
DQ6
DQ13
DQ5
A4
A3
A2
A1
A0
OE#
V
SS
Q
A6
A5
A7
CE#
DQ0
DQ8
A8
A9
A10
A14
DQ15
DQ14
V
SS
Q
V
CC
CLK
ADV#
A16
DQ4
DQ11
V
CC
NOTE: 1. Data based on MT28F642D20 device.
2
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
GENERAL DESCRIPTION
The MT28F642D20 and MT28F642D18 are high-
performance, high-density, nonvolatile memory solu-
tions that can significantly improve system
performance. This new architecture features a two-
memory-bank configuration that supports dual-bank
operation with no latency.
A high-performance bus interface allows a fast burst
or page mode data transfer; a conventional asynchro-
nous bus interface is provided as well.
The devices allow soft protection for blocks, as read-
only, by configuring soft protection registers with dedi-
cated command sequences. For security purposes, two
64-bit chip protection registers are provided.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM). Two on-chip status registers, one for
each of the two memory partitions, can be used to moni-
tor the WSM status and to determine the progress of
the program/erase task.
The erase/program suspend functionality allows
compatibility with existing EEPROM emulation soft-
ware packages.
These devices are manufactured using 0.18m pro-
cess technology.
Please refer to the Micron Web site (
www.micron.com/
flash
) for the latest data sheet.
ARCHITECTURE AND MEMORY
ORGANIZATION
The Flash devices contain two separate banks of
memory (bank a and bank b) for simultaneous READ
and WRITE operations, which are available in the fol-
lowing bank segmentation configurations:
Bank a comprises one-fourth of the memory and
contains 8 x 4K-word parameter blocks and
31 x 32K-word blocks.
Bank b represents three-fourths of the memory, is
equally sectored, and contains 96 x 32K-word
blocks.
Figures 2 and 3 show the bottom and top memory
organizations.
DEVICE MARKING
Due to the size of the package, Micron's standard
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used. The abbreviated
device marks are cross referenced to the Micron part
numbers in Table 1.
Table 1
Cross Reference for Abbreviated Device Marks
PRODUCT
SAMPLE
MECHANICAL
PART NUMBER
MARKING
MARKING
SAMPLE MARKING
MT28F642D20FN-705 TET
FW906
FX906
FY906
MT28F642D20FN-705 BET
FW905
FX905
FY905
MT28F642D20FN-804 TET
FW907
FX907
FY907
MT28F642D20FN-804 BET
FW908
FX908
FY908
MT28F642D18FN-705 TET
FW909
FX909
FY909
MT28F642D18FN-705 BET
FW910
FX910
FY910
MT28F642D18FN-804 TET
FW911
FX911
FY911
MT28F642D18FN-804 BET
FW912
FX912
FY912
3
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
PART NUMBERING INFORMATION
Micron's low-power devices are available with sev-
eral different combinations of features (see Figure 1).
Table 2
Valid Part Number Combinations
1
BOOT BLOCK
BURST
OPERATING
ACCESS
STARTING
FREQUENCY
TEMPERATURE
PART NUMBER
TIME (ns)
ADDRESS
(MHz)
RANGE
MT28F642D20FN-705 TET
70
Top
54
-40
o
C to +85
o
C
MT28F642D20FN-705 BET
70
Bottom
54
-40
o
C to +85
o
C
MT28F642D20FN-804 TET
80
Top
40
-40
o
C to +85
o
C
MT28F642D20FN-804 BET
80
Bottom
40
-40
o
C to +85
o
C
MT28F642D18FN-705 TET
70
Top
54
-40
o
C to +85
o
C
MT28F642D18FN-705 BET
70
Bottom
54
-40
o
C to +85
o
C
MT28F642D18FN-804 TET
80
Top
40
-40
o
C to +85
o
C
MT28F642D18FN-804 BET
80
Bottom
40
-40
o
C to +85
o
C
MT 28F 642 D20 FN-80 4 B ET
Micron Technology
Flash Family
28F = Dual-Supply Flash
Density/Organization/Banks
642 = 64Mb (4,096K x 16)
bank a = 1/4; bank b = 3/4
Access Time
-70 = 70ns
-80 = 80ns
Read Mode Operation
D = Asynchronous/Page/Burst Read
Package Code
FN = 59-ball FBGA (8 x 7 grid)
Operating Temperature Range
ET = Extended (-40C to +85C)
Burst Mode Frequency
4 = 40 MHz
5 = 54 MHz
Boot Block Starting Address
B = Bottom boot
T = Top boot
Operating Voltage Range
18 = 1.70V1.90V
20 = 1.80V2.20V V
CC
20 = 1.80V2.25V V
CC
Q
Figure 1
Part Number Chart
Valid combinations of features and their correspond-
ing part numbers are listed in Table 2.
NOTE: 1. For part number combinations not listed in this table, please contact your Micron
representative.
4
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
FUNCTIONAL BLOCK DIAGRAM
Address
Input
Buffer
BSM
X DEC
Y/Z DEC
Data Input
Buffer
Output
Multiplexer
Address
CNT WSM
Output
Buffer
Status
Reg.
WSM
Program/
Erase
Pump Voltage
Generators
Address Latch
DQ0DQ15
DQ0DQ15
CSM
RST#
ADV#
WAIT#
CLK
CE#
X DEC
Y/Z DEC
WE#
OE#
I/O Logic
A0A21
Address
Multiplexer
Bank 2 Blocks
Y/Z Gating/Sensing
Data
Register
Bank 1 Blocks
Y/Z Gating/Sensing
ID Reg.
RCR
Block Lock
Device ID
Manufacturer's ID
OTP
Query
PR Lock
Query/OTP
PR Lock
5
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Figure 2
Bottom Boot Block Device
Bank b = 48Mb
Block
Block Size
Address Range
(K-bytes/
(x16)
K-words)
134
64/32
3F8000h3FFFFFh
133
64/32
3F0000h3F7FFFh
132
64/32
3E8000h3EFFFFh
131
64/32
3E0000h3E7FFFh
130
64/32
3D8000h3DFFFFh
129
64/32
3D0000h3D7FFFh
128
64/32
3C8000h3CFFFFh
127
64/32
3C0000h3C7FFFh
126
64/32
3B8000h3BFFFFh
125
64/32
3B0000h3B7FFFh
124
64/32
3A8000h3AFFFFh
123
64/32
3A0000h3A7FFFh
122
64/32
398000h39FFFFh
121
64/32
390000h397FFFh
120
64/32
388000h38FFFFh
119
64/32
380000h387FFFh
118
64/32
378000h37FFFFh
117
64/32
370000h377FFFh
116
64/32
368000h36FFFFh
115
64/32
360000h367FFFh
114
64/32
358000h35FFFFh
113
64/32
350000h357FFFh
112
64/32
348000h34FFFFh
111
64/32
340000h347FFFh
110
64/32
338000h33FFFFh
109
64/32
330000h337FFFh
108
64/32
328000h32FFFFh
107
64/32
320000h327FFFh
106
64/32
318000h31FFFFh
105
64/32
310000h317FFFh
104
64/32
308000h30FFFFh
103
64/32
300000h307FFFh
102
64/32
2F8000h2FFFFFh
101
64/32
2F0000h2F7FFFh
100
64/32
2E8000h2EFFFFh
99
64/32
2E0000h2E7FFFh
98
64/32
2D8000h2DFFFFh
97
64/32
2D0000h2D7FFFh
96
64/32
2C8000h2CFFFFh
95
64/32
2C0000h2C7FFFh
94
64/32
2B8000h2BFFFFh
93
64/32
2B0000h2B7FFFh
92
64/32
2A8000h2AFFFFh
91
64/32
2A0000h2A7FFFh
90
64/32
298000h29FFFFh
89
64/32
290000h297FFFh
88
64/32
288000h28FFFFh
87
64/32
280000h287FFFh
Bank b = 48Mb
Block
Block Size
Address Range
(K-bytes/
(x16)
K-words)
Bank a = 16Mb
Block
Block Size
Address Range
(K-bytes/
(x16)
K-words)
38
64/32
0F8000h0FFFFFh
37
64/32
0F0000h0F7FFFh
36
64/32
0E8000h0EFFFFh
35
64/32
0E0000h0E7FFFh
34
64/32
0D8000h0DFFFFh
33
64/32
0D0000h0D7FFFh
32
64/32
0C8000h0CFFFFh
31
64/32
0C0000h0C7FFFh
30
64/32
0B8000h0BFFFFh
29
64/32
0B0000h0B7FFFh
28
64/32
0A8000h0AFFFFh
27
64/32
0A0000h0A7FFFh
26
64/32
098000h09FFFFh
25
64/32
090000h097FFFh
24
64/32
088000h08FFFFh
23
64/32
080000h087FFFh
22
64/32
078000h07FFFFh
21
64/32
070000h077FFFh
20
64/32
068000h06FFFFh
19
64/32
060000h067FFFh
18
64/32
058000h05FFFFh
17
64/32
050000h057FFFh
16
64/32
048000h04FFFFh
15
64/32
040000h047FFFh
14
64/32
038000h03FFFFh
13
64/32
030000h037FFFh
12
64/32
028000h02FFFFh
11
64/32
020000h027FFFh
10
64/32
018000h01FFFFh
9
64/32
010000h017FFFh
8
64/32
008000h00FFFFh
7
8/4
007000h007FFFh
6
8/4
006000h006FFFh
5
8/4
005000h005FFFh
4
8/4
004000h004FFFh
3
8/4
003000h003FFFh
2
8/4
002000h002FFFh
1
8/4
001000h001FFFh
0
8/4
000000h00FFFh
86
64/32
278000h27FFFFh
85
64/32
270000h277FFFh
84
64/32
268000h26FFFFh
83
64/32
260000h267FFFh
82
64/32
258000h25FFFFh
81
64/32
250000h257FFFh
80
64/32
248000h24FFFFh
79
64/32
240000h247FFFh
78
64/32
238000h23FFFFh
77
64/32
230000h237FFFh
76
64/32
228000h22FFFFh
75
64/32
220000h227FFFh
74
64/32
218000h21FFFFh
73
64/32
210000h217FFFh
72
64/32
208000h20FFFFh
71
64/32
200000h207FFFh
70
64/32
1F8000h1FFFFFh
69
64/32
1F0000h1F7FFFh
68
64/32
1E8000h1EFFFFh
67
64/32
1E0000h1E7FFFh
66
64/32
1D8000h1DFFFFh
65
64/32
1D0000h1D7FFFh
64
64/32
1C8000h1CFFFFh
63
64/32
1C0000h1C7FFFh
62
64/32
1B8000h1BFFFFh
61
64/32
1B0000h1B7FFFh
60
64/32
1A8000h1AFFFFh
59
64/32
1A0000h1A7FFFh
58
64/32
198000h19FFFFh
57
64/32
190000h197FFFh
56
64/32
188000h18FFFFh
55
64/32
180000h187FFFh
54
64/32
178000h17FFFFh
53
64/32
170000h177FFFh
52
64/32
168000h16FFFFh
51
64/32
160000h167FFFh
50
64/32
158000h15FFFFh
49
64/32
150000h157FFFh
48
64/32
148000h14FFFFh
47
64/32
140000h147FFFh
46
64/32
138000h13FFFFh
45
64/32
130000h137FFFh
44
64/32
128000h12FFFFh
43
64/32
120000h127FFFh
42
64/32
118000h11FFFFh
41
64/32
110000h117FFFh
40
64/32
108000h10FFFFh
39
64/32
100000h107FFFh
6
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Figure 3
Top Boot Block Device
Bank b = 48Mb
Block
Block Size
Address Range
(K-bytes/
(x16)
K-words)
95
64/32
2F8000h2FFFFFh
94
64/32
2F0000h2F7FFFh
93
64/32
2E8000h2EFFFFh
92
64/32
2E0000h2E7FFFh
91
64/32
2D8000h2DFFFFh
90
64/32
2D0000h2D7FFFh
89
64/32
2C8000h2CFFFFh
88
64/32
2C0000h2C7FFFh
87
64/32
2B8000h2BFFFFh
86
64/32
2B0000h2B7FFFh
85
64/32
2A8000h2AFFFFh
84
64/32
2A0000h2A7FFFh
83
64/32
298000h29FFFFh
82
64/32
290000h297FFFh
81
64/32
288000h28FFFFh
80
64/32
280000h287FFFh
79
64/32
278000h27FFFFh
78
64/32
270000h277FFFh
77
64/32
268000h26FFFFh
76
64/32
260000h267FFFh
75
64/32
258000h25FFFFh
74
64/32
250000h257FFFh
73
64/32
248000h24FFFFh
72
64/32
240000h247FFFh
71
64/32
238000h23FFFFh
70
64/32
230000h237FFFh
69
64/32
228000h22FFFFh
68
64/32
220000h227FFFh
67
64/32
218000h21FFFFh
66
64/32
210000h217FFFh
65
64/32
208000h20FFFFh
64
64/32
200000h207FFFh
63
64/32
1F8000h1FFFFFh
62
64/32
1F0000h1F7FFFh
61
64/32
1E8000h1EFFFFh
60
64/32
1E0000h1E7FFFh
59
64/32
1D8000h1DFFFFh
58
64/32
1D0000h1D7FFFh
57
64/32
1C8000h1CFFFFh
56
64/32
1C0000h1C7FFFh
55
64/32
1B8000h1BFFFFh
54
64/32
1B0000h1B7FFFh
53
64/32
1A8000h1AFFFFh
52
64/32
1A0000h1A7FFFh
51
64/32
198000h19FFFFh
50
64/32
190000h197FFFh
49
64/32
188000h18FFFFh
48
64/32
180000h187FFFh
Bank b = 48Mb
Block
Block Size
Address Range
(K-bytes/
(x16)
K-words)
Bank a = 16Mb
Block
Block Size
Address Range
(K-bytes/
(x16)
K-words)
134
8/4
3FF000h3FFFFFh
133
8/4
3FE000h3FEFFFh
132
8/4
3FD000h3FDFFFh
131
8/4
3FC000h3FCFFFh
130
8/4
3FB000h3FBFFFh
129
8/4
3FA000h3FAFFFh
128
8/4
3F9000h3F9FFFh
127
8/4
3F8000h3F8FFFh
126
64/32
3F0000h3F7FFFh
125
64/32
3E8000h3EFFFFh
124
64/32
3E0000h3E7FFFh
123
64/32
3D8000h3DFFFFh
122
64/32
3D0000h3D7FFFh
121
64/32
3C8000h3CFFFFh
120
64/32
3C0000h3C7FFFh
119
64/32
3B8000h3BFFFFh
118
64/32
3B0000h3B7FFFh
117
64/32
3A8000h3AFFFFh
116
64/32
3A0000h3A7FFFh
115
64/32
398000h39FFFFh
114
64/32
390000h397FFFh
113
64/32
388000h38FFFFh
112
64/32
380000h387FFFh
111
64/32
378000h37FFFFh
110
64/32
370000h377FFFh
109
64/32
368000h36FFFFh
108
64/32
360000h367FFFh
107
64/32
358000h35FFFFh
106
64/32
350000h357FFFh
105
64/32
348000h34FFFFh
104
64/32
340000h347FFFh
103
64/32
338000h33FFFFh
102
64/32
330000h337FFFh
101
64/32
328000h32FFFFh
100
64/32
320000h327FFFh
99
64/32
318000h31FFFFh
98
64/32
310000h317FFFh
97
64/32
308000h30FFFFh
96
64/32
300000h307FFFh
47
64/32
178000h17FFFFh
46
64/32
170000h177FFFh
45
64/32
168000h16FFFFh
44
64/32
160000h167FFFh
43
64/32
158000h15FFFFh
42
64/32
150000h157FFFh
41
64/32
148000h14FFFFh
40
64/32
140000h147FFFh
39
64/32
138000h13FFFFh
38
64/32
130000h137FFFh
37
64/32
128000h12FFFFh
36
64/32
120000h127FFFh
35
64/32
118000h11FFFFh
34
64/32
110000h117FFFh
33
64/32
108000h10FFFFh
32
64/32
100000h107FFFh
31
64/32
0F8000h0FFFFFh
30
64/32
0F0000h0F7FFFh
29
64/32
0E8000h0EFFFFh
28
64/32
0E0000h0E7FFFh
27
64/32
0D8000h0DFFFFh
26
64/32
0D0000h0D7FFFh
25
64/32
0C8000h0CFFFFh
24
64/32
0C0000h0C7FFFh
23
64/32
0B8000h0BFFFFh
22
64/32
0B0000h0B7FFFh
21
64/32
0A8000h0AFFFFh
20
64/32
0A0000h0A7FFFh
19
64/32
098000h09FFFFh
18
64/32
090000h097FFFh
17
64/32
088000h08FFFFh
16
64/32
080000h087FFFh
15
64/32
078000h07FFFFh
14
64/32
070000h077FFFh
13
64/32
068000h06FFFFh
12
64/32
060000h067FFFh
11
64/32
058000h05FFFFh
10
64/32
050000h057FFFh
9
64/32
048000h04FFFFh
8
64/32
040000h047FFFh
7
64/32
038000h03FFFFh
6
64/32
030000h037FFFh
5
64/32
028000h02FFFFh
4
64/32
020000h027FFFh
3
64/32
018000h01FFFFh
2
64/32
010000h017FFFh
1
64/32
008000h00FFFFh
0
64/32
000000h007FFFh
7
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
BALL DESCRIPTIONS
59-BALL FBGA
NUMBERS
SYMBOL
TYPE
DESCRIPTION
E8, D8, C8, B8,
A0A21
Input
Address Inputs: Inputs for the addresses during READ and WRITE
A8, B7, A7, C7,
operations. Addresses are internally latched during READ and WRITE
A2, B2, C2, A1,
cycles.
B1, C1, D2, D1,
D4, B6, A6, C6,
B3, C3
B4
CLK
Input
Clock: Synchronizes the Flash memory to the system operating
frequency during synchronous burst mode READ operations. When
configured for synchronous burst mode READs, address is latched on
the first rising (or falling, depending upon the read configuration
register setting) CLK edge when ADV# is active or upon a rising ADV#
edge, whichever occurs first. CLK is ignored during asynchronous
access READ and WRITE operations and during READ PAGE ACCESS
operations.
1
C4
ADV#
Input
Address Valid: Indicates that a valid address is present on the address
inputs. Addresses are latched on the rising edge of ADV# during READ
and WRITE operations. ADV# may be tied active during asynchronous
READ and WRITE operations.
1
A5
V
PP
Input
Program/Erase Enable: [0.9V2.20V or 11.4V12.6V] Operates as input
at logic levels to control complete device protection. Provides factory
programming compatibility when driven to 11.4V12.6V.
E7
CE#
Input
Chip Enable: Activates the device when LOW. When CE# is HIGH, the
device is disabled and goes into standby power mode.
F8
OE#
Input
Output Enable: Enables the output buffers when LOW. When OE# is
HIGH, the output buffers are disabled.
C5
WE#
Input
Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is
LOW, the cycle is either a WRITE to the command state machine (CSM)
or to the memory array.
B5
RST#
Input
Reset: When RST# is a logic LOW, the device is in reset mode, which
drives the outputs to High-Z and resets the write state machine (WSM).
When RST# is at logic HIGH, the device is in standard operation. When
RST# transitions from logic LOW to logic HIGH, the device resets all
blocks to locked and defaults to the read array mode.
D6
WP#
Input
Write Protect: Controls the lock down function of the flexible locking
feature.
F7, E6, E5, G5, DQ0DQ15
Input/
Data Inputs/Outputs: Inputs array data on the second CE# and WE#
E4, G3, E3, G1,
Output
cycle during PROGRAM command. Inputs commands to the
G7, F6, F5, F4,
command user interface when CE# and WE# are active. DQ0DQ15
D5, F3, F2, E2
output data when CE# and OE# are active.
D3
WAIT#
Output
Wait: Provides data valid feedback during continuous burst read
access. The signal is gated by OE# and CE#. This signal is always kept at
a valid logic level.
NOTE: 1. The CLK and ADV# inputs can be tied to V
SS
if the device is always operating in asynchronous or page mode. The WAIT#
signal can be ignored when operating in asynchronous or page mode, as it is always held at logic "1" or "0," depending
on the RCR8 setting (see Table 9).
(continued on next page)
8
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
BALL DESCRIPTIONS (continued)
59-BALL FBGA
NUMBERS
SYMBOL
TYPE
DESCRIPTION
A4, G4
V
CC
Supply
Device Power Supply: [1.70V1.90V (MT28F642D18) or 1.80V2.20V
(MT28F642D20)] Supplies power for device operation.
E1, G6
V
CC
Q
Supply
I/O Power Supply: [1.70V1.90V (MT28F642D18) or 1.80V2.25V
(MT28F642D20)] Supplies power for input/output buffers.
G2, G8
V
SS
Q
Supply
I/O Ground. Do not float any ground ball.
A3, F1
V
SS
Supply
Do not float any ground ball.
D7
Contact ball is not physically present.
9
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
COMMAND STATE MACHINE (CSM)
Commands are issued to the command state ma-
chine (CSM) using standard microprocessor write tim-
ings. The CSM acts as an interface between external
microprocessors and the internal write state machine
(WSM). The available commands are listed in Table 3,
their definitions are given in Table 4, and their descrip-
tions in Table 5. Program and erase algorithms are au-
tomated by an on-chip WSM. Table 6 shows the CSM
transition states. Once a valid PROGRAM/ERASE com-
mand is entered, the WSM executes the appropriate
algorithm. The algorithm generates the necessary tim-
ing signals to control the device internally and accom-
plish the requested operation. A command is valid only
if the exact sequence of WRITEs is completed. After the
WSM completes its task, the WSM status bit (SR7) is set
to a logic HIGH level (1) (see Table 8), allowing the CSM
to respond to the full command set again.
OPERATIONS
Device operations are selected by entering a stan-
dard JEDEC 8-bit command code with conventional mi-
croprocessor timings into an on-chip CSM through I/Os
DQ0DQ7. The number of bus cycles required to acti-
vate a command is typically one or two. The first opera-
tion is always a WRITE. Control signals CE#, ADV#, and
WE# must be at a logic LOW level (V
IL
), and OE# and RST#
must be at logic HIGH (V
IH
). The second operation, when
needed, can be a WRITE or a READ depending upon the
command. During a READ operation, control signals
CE#, ADV#, and OE# must be at a logic LOW level (V
IL
),
and WE# and RST# must be at logic HIGH (V
IH
).
Table 7 illustrates the bus operations for all the
modes: write, read, reset, standby, and output disable.
When the device is powered up, internal reset cir-
cuitry initializes the chip to a read array mode of opera-
tion. Changing the mode of operation requires that a
command code be entered into the CSM. For each of
the memory partitions, an on-chip status register is
available. These two registers enable the progress of
various operations that take place on a memory bank
to be monitored. Either of the two status registers is
interrogated by entering a READ STATUS REGISTER
command onto the CSM (cycle 1), specifying an ad-
dress within the memory partition boundary, and read-
ing the register data on I/Os DQ0DQ7 (cycle 2). Status
register bits SR0SR7 correspond to DQ0DQ7 (see
Table 8).
COMMAND DEFINITION
Once a specific command code has been entered,
the WSM executes an internal algorithm, generating
the necessary timing signals to program, erase, and
verify data. See Table 4 for the CSM command defini-
tions and data for each of the bus cycles.
Table 3
Command State Machine Codes For Device Mode Selection
COMMAND DQ0DQ7
CODE ON DEVICE MODE
10h
Accelerated programming algorithm (APA)
20h
Block erase setup
40h
Program setup
50h
Clear status register
60h
Protection configuration setup
60h
Set read configuration register
70h
Read status register
90h
Read protection configuration register
98h
Read query
B0h
Program/erase suspend
C0h
Protection register program/lock
D0h
Program/erase resume erase confirm
D1h
Check block erase confirm
FFh
Read array
10
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Table 4
Command Definitions
FIRST BUS CYCLE
SECOND BUS CYCLE
COMMAND
OPERATION ADDRESS
1
DATA
OPERATION ADDRESS
1
DATA
READ ARRAY
WRITE
WA
FFh
READ PROTECTION CONFIGURATION REGISTER
WRITE
IA
90h
READ
IA
ID
READ STATUS REGISTER
WRITE
BA
70h
READ
X
SRD
CLEAR STATUS REGISTER
WRITE
BA
50h
READ QUERY
WRITE
QA
98h
READ
QA
QD
BLOCK ERASE SETUP
WRITE
BA
20h
WRITE
BA
D0h
PROGRAM SETUP
WRITE
WA
40h
WRITE
WA
WD
ACCELERATED PROGRAMMING ALGORITHM (APA)
WRITE
WA
10h
WRITE
WA
WD
PROGRAM/ERASE SUSPEND
WRITE
BA
B0h
PROGRAM/ERASE RESUME ERASE CONFIRM
WRITE
BA
D0h
LOCK BLOCK
WRITE
BA
60h
WRITE
BA
01h
UNLOCK BLOCK
WRITE
BA
60h
WRITE
BA
D0h
LOCK DOWN BLOCK
WRITE
BA
60h
WRITE
BA
2Fh
CHECK BLOCK ERASE
WRITE
BA
20h
WRITE
BA
D1h
PROTECTION REGISTER PROGRAM
WRITE
PA
C0h
WRITE
PA
PD
PROTECTION REGISTER LOCK
WRITE
LPA
C0h
WRITE
LPA
FFFDh
SET READ CONFIGURATION REGISTER
WRITE
RCD
60h
WRITE
RCD
03h
STATUS REGISTER
The status register allows the user to determine
whether the state of a PROGRAM/ERASE operation is
pending or complete. The status register is monitored
by toggling OE# and CE# and reading the resulting
status code on I/Os DQ0DQ7. The high-order I/Os
(DQ8DQ15) are set to 00h internally, so only the low-
order I/Os (DQ0DQ7) need to be interpreted. Address
lines select the status register pertinent to the selected
memory partition.
Register data is updated and latched on the falling
edge of ADV# or the rising (falling) edge of CLK when
ADV# is LOW during synchronous burst mode, or on
the falling edge of OE# or CE#, whichever occurs last.
Latching the data prevents errors from occurring if the
register input changes during status register monitor-
ing.
The status register provides a reading of the inter-
nal state of the WSM to the external microprocessor.
During periods when the WSM is active, the status reg-
ister can be polled to determine the WSM status. Table
8 defines the status register bits.
After monitoring the status register during a PRO-
GRAM/ERASE operation, the data appearing on
DQ0DQ7 remains as status register data until a new
command is issued to the CSM. To return the device to
other modes of operation, a new command must be
issued to the CSM.
COMMAND STATE MACHINE
OPERATIONS
The CSM decodes instructions for the commands
listed in Table 3. The 8-bit command code is input to
the device on DQ0DQ7 (see Table 3 for CSM codes
and Table 4 for command definitions). During a PRO-
GRAM or ERASE cycle, the CSM informs the WSM that a
PROGRAM or ERASE cycle has been requested.
NOTE: 1. WA: Word address of memory location to be
written, or read
IA:
Identification code address
BA:
Address within the block
ID:
Identification code data
SRD: Data read from the status register
QA: Query code address
QD: Query code data
WD: Data to be written at the location WA
PA:
Protection register address
PD:
Data to be written at the location PA
LPA: Lock protection register address
RCD: Data to be written in the read configuration
register
X:
"Don't Care"
11
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Table 5
Command Descriptions
CODE DEVICE MODE
BUS CYCLE
DESCRIPTION
10h
APA
First
Prepares the CSM for an ACCELERATED PROGRAM ALGORITHM
(APA) command.
20h
Erase Setup
First
Prepares the CSM for the ERASE command. If the next command is
not a CHECK BLOCK ERASE or ERASE CONFIRM command, the
command will be ignored, and the bank will go to the read status
mode and wait for another command.
40h
Program Setup
First
A two-cycle command: The first cycle prepares for a PROGRAM
operation, and the second cycle latches addresses and data and
initiates the WSM to execute the program algorithm. The Flash
outputs status register data on the rising edge of ADV#, or on the
rising clock edge when ADV# is LOW during synchronous burst
mode, or on the falling edge of OE# or CE#, whichever occurs first.
50h
Clear Status
First
The WSM can set the block lock status (SR1), V
PP
status (SR3),
Register
program status (SR4), and erase status (SR5) bits in the status register
to "1," but it cannot clear them to "0." Issuing this command clears
those bits to "0."
60h
Protection
First
Prepares the CSM for changes to the block locking status. If the next
Configuration
command is not BLOCK UNLOCK, BLOCK LOCK, or BLOCK LOCK
Setup
DOWN, the command will be ignored, and the device will go to the
read status mode.
Set Read
First
Puts the device into the set read configuration mode so that it will
Configuration
be possible to set the option bits related to burst read mode.
Register
70h
Read Status
First
Places the device into a read status register mode. Reading the
Register
device will output the contents of the status register for the
addressed bank. The device will automatically enter this mode for
the addressed bank after a PROGRAM or ERASE operation has been
initiated.
90h
Read Protection
First
Puts the device into the read protection configuration mode so that
Configuration
reading the device will output the manufacturer/device codes, block
lock status, protection register, or protection register lock status.
98h
Read Query
First
Puts the device into the read query mode so that reading the device
will output common flash interface information.
B0h
Program Suspend
First
Issuing this command will suspend the currently executing
PROGRAM/ERASE/CHECK BLOCK ERASE operation. The status register
Erase Suspend
will indicate when the operation has been successfully suspended by
setting either the program suspend (SR2) or erase suspend (SR6) bit,
Check Block
and the WSM status bit (SR7) to a "1" (ready). The WSM will
Erase Suspend
continue to idle in the suspend state, regardless of the state of all
input control signals except RST#, which will immediately shut down
the WSM and the remainder of the chip if RST# is driven to V
IL
.
(continued on next page)
12
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Table 5
Command Descriptions (continued)
CODE DEVICE MODE
BUS CYCLE
DESCRIPTION
C0h
Program Device
First
Writes a specific code into the device protection register.
Protection Register
Lock Device
First
Locks the device protection register; data can no longer be changed.
Protection Register
D0h
Erase Confirm
Second
If the previous command was an ERASE SETUP command, then the
CSM will close the address and data latches, and it will begin erasing
the block indicated on the address balls. During programming/erase,
the device will respond only to the READ STATUS REGISTER,
PROGRAM SUSPEND, or ERASE SUSPEND command. It will output
status register data on the rising edge of ADV#, or on the rising clock
edge when ADV# is LOW during synchronous burst mode, or on the
falling edge of OE# or CE#, whichever occurs last.
Program/Erase/
First
If a PROGRAM, ERASE or CHECK BLOCK ERASE operation was
Check Block Erase
previously suspended, this command will resume the operation.
Resume
FFh
Read Array
First
During read array mode, array data will be output on the data bus.
01h
Lock Block
Second
If the previous command was PROTECTION CONFIGURATION SETUP,
the CSM will latch the address and lock the block indicated on the
address bus.
03h
Read Configuration
Second
If the previous command was SET READ CONFIGURATION REGISTER,
Register Data
the configuration bits presented on the address bus will be stored
into the read configuration register.
2Fh
Lock Down
Second
If the previous command was PROTECTION CONFIGURATION SETUP,
the CSM will latch the address and lock down the block indicated on
the address bus.
D0h
Unlock Block
Second
If the previous command was PROTECTION CONFIGURATION SETUP,
the CSM will latch the address and unlock the block indicated on the
address bus. If the block had been previously set to lock down, this
operation will have no effect.
D1h
Check Block
Second
If the previous command was ERASE SETUP, the CSM will close the
Erase Confirm
address latches and check to see that the block is completely erased.
00h
Invalid/Reserved
Unassigned command that should not be used.
13
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
READ PROTECTION CONFIGURATION DATA
The read protection configuration mode outputs
five types of information: the manufacturer/device
identifier, the block locking status, the read configura-
tion register, the protection register, and PR lock sta-
tus. Two bus cycles are required for this operation: the
chip identification data is read by entering the com-
mand code 90h on DQ0DQ7 and the identification
code address on the address lines. Control signals CE#,
ADV#, and OE# must be at a logic LOW level (V
IL
), and
WE# and RST# must be at a logic HIGH level (V
IH
) to
read data from the protection configuration register.
Data is available on DQ0DQ15. After data is read from
the protection configuration register, the READ ARRAY
command, FFh, must be issued to the bank containing
address 00h prior to issuing other commands. See Table
13 for further details.
READ QUERY
The read query mode outputs common flash inter-
face (CFI) data when the device is read (see Table 15).
Two bus cycles are required for this operation. It is
possible to access the query by writing the read query
command code 98h on DQ0DQ7 to the bank contain-
ing address 0h. Control signals CE#, ADV#, and OE#
must be at a logic LOW level (V
IL
) and WE# and RST#
must be at a logic HIGH level (V
IH
) to read data from the
query. The CFI data structure contains information
such as block size, density, command set, and electri-
cal specifications. To return to read array mode, write
the read array command code FFh on DQ0DQ7.
READ STATUS REGISTER
The status register is read by entering the command
code 70h on DQ0DQ7. Two bus cycles are required for
this operation: one to enter the command code and a
second to read the status register. The addresses for
both cycles must be in the same partition. In a READ
cycle, the address is latched on the rising edge of the
ADV# signal. Register data is updated and latched on
the falling edge of ADV# or the rising (falling) CLK when
ADV# is LOW during burst mode, or on the falling edge
of OE# or CE#, whichever occurs last.
During a PROGRAM cycle, the WSM controls the
program sequences and the CSM responds to a PRO-
GRAM SUSPEND command only.
During an ERASE cycle, the CSM responds to an
ERASE SUSPEND command only. When the WSM has
completed its task, the WSM status bit (SR7) is set to a
logic HIGH level and the CSM responds to the full com-
mand set. The CSM stays in the current command state
until the microprocessor issues another command.
The WSM successfully initiates an ERASE or PRO-
GRAM operation only when V
PP
is within its correct volt-
age range.
CLEAR STATUS REGISTER
The internal circuitry can set, but not clear, the block
lock status bit (SR1), the V
PP
status bit (SR3), the pro-
gram status bit (SR4), and the erase status bit (SR5) of
the status register. The CLEAR STATUS REGISTER com-
mand (50h) allows the external microprocessor to clear
these status bits and synchronize to the internal op-
erations. When the status bits are cleared, the device
returns to the read array mode.
READ OPERATIONS
The following READ operations are available: READ
ARRAY, READ PROTECTION CONFIGURATION REG-
ISTER, READ QUERY and READ STATUS REGISTER.
READ ARRAY
The array is read by entering the command code
FFh on DQ0DQ7. Control signals CE#, ADV#, and OE#
must be at a logic LOW level (V
IL
) and WE# and RST#
must be at a logic HIGH level (V
IH
) to read data from the
array. Data is available on DQ0DQ15. Any valid ad-
dress within any of the blocks selects that address and
allows data to be read from that address. Upon initial
power-up or device reset, the device defaults to the
read array mode.
14
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Table 6
Command State Machine Transition Table
(continued on the next page)
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2002, Micron Technology, Inc.
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Table 6
Command State Machine Transition Table (continued)
(continued on the next page)
16
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Table 6
Command State Machine Transition Table (continued)
(continued on the next page)
)
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Table 6
Command State Machine Transition Table (continued)
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18
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
STATUS
BIT #
STATUS REGISTER BIT
DESCRIPTION
SR7
WRITE STATE MACHINE STATUS (WSMS)
Check WSM bit to determine word program or block erase
1 = Ready
completion before checking program or erase status bits.
0 = Busy
SR6
ERASE SUSPEND STATUS (ESS)
When ERASE SUSPEND is issued, WSM halts execution and
1 = BLOCK ERASE Suspended
sets both WSMS and ESS bits to "1." ESS bit remains set to
0 = BLOCK ERASE in
"1" until an ERASE RESUME command is issued.
Progress/Completed
SR5
ERASE/CHECK BLOCK ERASE
When this bit is set to "1" and ERASE CONFIRM is issued, WSM
STATUS (ES)
has applied the maximum number of erase pulses to the block
1 = Error in BLOCK ERASE/
and is still unable to verify successful block erasure. When this
CHECK BLOCK ERASE
bit is set to "1" and CHECK BLOCK ERASE CONFIRM is issued,
0 = Successful BLOCK ERASE
WSM has checked the block for its erase state, and the block is
not erased.
SR4
PROGRAM STATUS (PS)
When this bit is set to "1," WSM has attempted but failed to
1 = Error in PROGRAM
program a word.
0 = Successful PROGRAM
SR3
V
PP
STATUS (V
PP
S)
The V
PP
status bit does not provide continuous indication of
1 = V
PP
Low Detect, Operation Abort
the V
PP
level. The WSM interrogates the V
PP
level only after
0 = V
PP
= OK
the program or erase command sequences have been entered
and informs the system if V
PP
< 0.9V. The V
PP
level is also
checked before the PROGRAM/ERASE is verified by the WSM.
SR2
PROGRAM SUSPEND STATUS (PSS)
When PROGRAM SUSPEND is issued, WSM halts execution
1 = PROGRAM Suspended
and sets both WSM and PSS bits to "1." PSS bit remains set to
0 = PROGRAM in Progress/Completed
"1" until a PROGRAM RESUME command is issued.
SR1
BLOCK LOCK STATUS (BLS)
If a PROGRAM or ERASE operation is attempted to one of the
1 = PROGRAM/ERASE Attempted on a
locked blocks, this is set by the WSM. The operation specified
Locked Block; Operation Aborted
is aborted and the device is returned to read status mode.
0 = No Operation to Locked Blocks
SR0
RESERVED FOR FUTURE ENHANCEMENT
This bit is reserved for future use.
Table 8
Status Register Bit Definitions
WSMS
ESS
ES
PS
V
PP
S
PSS
BLS
R
7
6
5
4
3
2
1
0
Table 7
Bus Operations
MODE
RST#
CE#
ADV#
OE#
WE#
ADDRESS DQ0-DQ15
Read (array, status registers,
V
IH
V
IL
V
IL
V
IL
V
IH
X
D
OUT
device identification register, or
query)
Standby
V
IH
V
IH
X
X
X
X
High-Z
Output Disable
V
IH
V
IL
X
V
IH
V
IH
X
High-Z
Reset
VIL
X
X
X
X
X
High-Z
Write
V
IH
V
IL
V
IL
V
IH
V
IL
X
D
IN
19
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
PROGRAMMING OPERATIONS
There are two CSM commands for programming:
PROGRAM SETUP and ACCELERATED PROGRAM-
MING ALGORITHM (see Table 3).
PROGRAM SETUP COMMAND
After the 40h command code is entered on DQ0-
DQ7, the WSM takes over and correctly sequences the
device to complete the PROGRAM operation. The
WRITE operation may be monitored through the sta-
tus register (see the Status Register section). During
this time, the CSM will only respond to a PROGRAM
SUSPEND command until the PROGRAM operation
has been completed, after which time, all commands
to the CSM become valid again. The PROGRAM opera-
tion can be suspended by issuing a PROGRAM SUS-
PEND command (B0h). Once the WSM reaches the
suspend state, it allows the CSM to respond only to
READ ARRAY, READ STATUS REGISTER, READ PRO-
TECTION CONFIGURATION, READ QUERY, PRO-
GRAM SETUP, or PROGRAM RESUME. During the
PROGRAM SUSPEND operation, array data should be
read from an address other than the one being pro-
grammed. To resume the PROGRAM operation, a PRO-
GRAM RESUME command (D0h) must be issued to
cause the CSM to clear the suspend state previously
set (see Figure 4 for programming operation and Figure
5 for program suspend and program resume).
Taking RP# to V
IL
during programming aborts the
PROGRAM operation.
ACCELERATED PROGRAMMING ALGORITHM
COMMAND
The accelerated programming algorithm (APA) is
intended for in-system and in-factory use. Its 32
single-word internal buffer enables fast data stream
programming.
The APA is activated when a 10h command is writ-
ten. Upon activation, the word address and the data
sequences must be provided to the WSM, without poll-
ing SR7. The same starting address must be provided
for each data word. After all 32 sequences are issued,
the status register reports a busy condition. Figure 6
shows the APA flowchart.
If the data stream is shorter than 32 words, use
FFFFh to complete the data stream. Also, ensure the
starting address is aligned with a 32-word boundary.
The APA is fully concurrent. For example, it can be
interrupted and resumed during programming. When
the APA is active, only a read access in the other bank is
allowed.
For in-factory programming, the APA, along with an
optimized set of programming parameters, minimizes
chip programming time when 11.4V
V
PP
12.6V.
For in-system programming, when 0.9V
V
PP
2.2V,
the APA and the 32 single-word buffer significantly
improve both the system throughput and the average
programming time when compared with standard pro-
gramming practices. The accelerated programming
functionality executes and verifies the APA without
microprocessor intervention. This relieves the micro-
processor from constantly monitoring the progress of
the programming and erase activity, freeing up valu-
able memory bus bandwidth. This increases the sys-
tem throughput.
ERASE OPERATIONS
An ERASE operation must be used to initialize all
bits in an array block to "1s." After BLOCK ERASE CON-
FIRM is issued, the CSM responds only to an ERASE
SUSPEND command until the WSM completes its task.
Block erasure inside the memory array sets all bits
within the address block to logic 1s. Erase is accom-
plished only by blocks; data at single address locations
within the array cannot be erased individually. The
block to be erased is selected by using any valid ad-
dress within that block. Block erasure is initiated by a
command sequence to the CSM: BLOCK ERASE SETUP
(20h) followed by BLOCK ERASE CONFIRM (D0h) (see
Figure 7). A two-command erase sequence protects
against accidental erasure of memory contents.
When the BLOCK ERASE CONFIRM command is
complete, the WSM automatically executes a sequence
of events to complete the block erasure. During this
sequence, the block is programmed with logic 0s, data
is verified, all bits in the block are erased, and finally
verification is performed to ensure that all bits are cor-
rectly erased. Monitoring of the ERASE operation is
possible through the status register (see the Status
Register section).
During the execution of an ERASE operation, the
ERASE SUSPEND command (B0h) can be entered to
direct the WSM to suspend the ERASE operation. Once
the WSM has reached the suspend state, it allows the
CSM to respond only to the READ ARRAY, READ STA-
TUS REGISTER, READ QUERY, READ CHIP PROTEC-
TION CONFIGURATION, PROGRAM SETUP, PRO-
GRAM RESUME, ERASE RESUME, and LOCK SETUP
(see the Block Locking section). During the ERASE SUS-
PEND operation, array data must be read from a block
other than the one being erased. To resume the ERASE
20
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
operation, an ERASE RESUME command (D0h) must
be issued to cause the CSM to clear the suspend state
previously set (see Figure 8). It is also possible that an
ERASE in any bank can be suspended and a WRITE to
another block in the same bank can be initiated. After
the completion of a WRITE, an ERASE can be resumed
by writing an ERASE RESUME command.
After an ERASE command completion, it is possible
to check if the block has been erased successfully, us-
ing the CHECK BLOCK ERASE command. Two bus
cycles are required for this operation: one to set up the
CHECK BLOCK ERASE and the second one to start the
execution of the command. If, after the operation, the
SR5 bit is set to "0," the operation has been completed
succesfully. If it is set to "1," there has been an error
during the BLOCK ERASE operation.
21
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
YES
NO
Full Status Register
Check (optional)
NO
YES
PROGRAM
SUSPEND?
SR7 = 1?
Issue PROGRAM SETUP
Command and
Word Address
Start
Word Program Passed
V
PP
Range Error
Word Program Failed
FULL STATUS REGISTER CHECK FLOW
Read Status Register
Bits
Issue Word Address
and Word Data
PROGRAM
SUSPEND Loop
1
YES
NO
SR1 = 0?
YES
NO
SR3 = 0?
YES
NO
SR4 = 0?
Word Program
Completed
Read Status Register
Bits
PROGRAM Attempted
on a Locked Block
Figure 4
Automated Word Programming
Flowchart
NOTE: 1. Full status register check can be done after each word or after a sequence of words.
2. SR3 must be cleared before attempting additional PROGRAM/ERASE operations.
3. SR4 is cleared only by the CLEAR STATUS REGISTER command, but it does not prevent additional program operation
attempts.
BUS
OPERATION COMMAND COMMENTS
WRITE
WRITE
Data = 40h or 10h
PROGRAM
Addr = Address of word to
SETUP
be programmed
WRITE
WRITE
Data = Word to be
DATA
programmed
Addr = Address of word to
be programmed
READ
Status register data
Toggle OE# or CE# to
update status register
Standby
Check SR7
1 = Ready, 0 = Busy
Repeat for subsequent words.
Write FFh after the last word programming operation
to reset the device to read array mode.
BUS
OPERATION COMMAND COMMENTS
Standby
Check SR1
1 = Detect locked block
Standby
Check SR3
2
1 = Detect V
PP
LOW
Standby
Check SR4
3
1 = Word program error
22
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Issue READ ARRAY
Command
PROGRAM
Complete
Finished
Reading
?
Issue PROGRAM
RESUME Command
YES
YES
NO
NO
SR2 = 1?
Start
PROGRAM Resumed
Read Status Register
Bits
Issue PROGRAM
SUSPEND Command
YES
NO
SR7 = 1?
Figure 5
PROGRAM SUSPEND/
PROGRAM RESUME Flowchart
BUS
OPERATION COMMAND COMMENTS
WRITE
PROGRAM Data = B0h
SUSPEND
READ
Status register data
Toggle OE# or CE# to
update status register
Standby
Check SR7
1 = Ready
Standby
Check SR2
1 = Suspended
WRITE
READ
Data = FFh
ARRAY
READ
Read data from block
other than that being
programmed
WRITE
PROGRAM Data = D0h
RESUME
23
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
BUS
OPERATION COMMAND
COMMENTS
WRITE
WRITE
Data = 10h
ACCELERATED Addr = Start address
PROGRAM
ALGORITHM
SETUP
WRITE
WRITE
Data = Word to be
DATA
programmed
Addr = Start address
READ
Status register data
Toggle OE# or CE# to
update status register
Standby
Check SR7
1 = Ready, 0 = Busy
Figure 6
Accelerated Program
Algorithm Flowchart
Issue the
ACCELERATED
PROGRAMMING
ALGORITHM
Command (10h)
and Word Address
Issue 32 sequences of
Word Data
YES
Start
PROGRAM Complete
YES
NO
SR3 = 0?
NO
SR7 = 1?
24
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
YES
NO
Full Status Register
Check (optional)
NO
YES
ERASE
SUSPEND?
SR 7 = 1?
Start
BLOCK ERASE Passed
V
PP
Range Error
BLOCK ERASE Failed
FULL STATUS REGISTER CHECK FLOW
Read Status Register
Bits
ERASE
SUSPEND Loop
1
YES
NO
SR1 = 0?
YES
NO
YES
NO
BLOCK ERASE
Completed
Read Status Register
Bits
ERASE Attempted
on a Locked Block
SR3 = 0?
SR5 = 0?
Issue ERASE SETUP
Command and
Block Address
Issue BLOCK ERASE
CONFIRM Command
and Block Address
Figure 7
BLOCK ERASE Flowchart
NOTE: 1. Full status register check can be done after each block or after a sequence of blocks.
2. SR3 must be cleared before attempting additional PROGRAM/ERASE operations.
3. SR5 is cleared only by the CLEAR STATUS REGISTER command in cases where multiple blocks are erased before full
status is checked.
BUS
OPERATION COMMAND COMMENTS
WRITE
WRITE
Data = 20h
ERASE
Block Addr = Address
SETUP
within block to be erased
WRITE
ERASE
Data = D0h
Block Addr = Address
within block to be erased
READ
Status register data
Toggle OE# or CE# to
update status register
Standby
Check SR7
1 = Ready, 0 = Busy
Repeat for subsequent blocks.
Write FFh after the last BLOCK ERASE operation to
reset the device to read array mode.
BUS
OPERATION COMMAND COMMENTS
Standby
Check SR1
1 = Detect locked block
Standby
Check SR3
2
1 = Detect V
PP
block
Standby
Check SR5
3
1 = BLOCK ERASE error
25
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
READ
PROGRAM
Issue READ ARRAY
Command
PROGRAM
Loop
ERASE
Complete
READ or
PROGRAM?
YES
NO
Issue ERASE
RESUME Command
READ or
PROGRAM
Complete?
YES
NO
SR6 = 1?
Start
ERASE Continued
Read Status Register
Bits
Issue ERASE
SUSPEND Command
2
(Note 1)
YES
NO
SR7 = 1?
Figure 8
ERASE SUSPEND/ERASE RESUME
Flowchart
NOTE: 1. See Word Programming Flowchart for complete programming procedure.
2. See BLOCK ERASE Flowchart for complete erasure procedure.
BUS
OPERATION COMMAND COMMENTS
WRITE
ERASE
Data = B0h
SUSPEND
READ
Status register data
Toggle OE# or CE# to
update status register
Standby
Check SR7
1 = Ready
Standby
Check SR6
1 = Suspended
WRITE
READ
Data = FFh
ARRAY
READ
Read data from block
other than that being
erased.
WRITE
ERASE
Data = D0h
RESUME
26
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Figure 9
CHECK BLOCK ERASE Flowchart
BUS
OPERATION COMMAND COMMENTS
WRITE
ERASE
Data = 20h
SETUP
Block Addr = Address
within block to be
checked
WRITE
CHECK
Data = D1h
BLOCK
Block Addr = Address
ERASE
within block to be
CONFIRM
checked
READ
Status register data
Toggle OE# or CE# to
update status register
Standby
Check SR7 and SR5
Issue ERASE SETUP
Command and
Block Address
Error
Issue CHECK BLOCK
ERASE CONFIRM
Command and
Block Address
YES
Start
BLOCK ERASE
Complete
YES
NO
SR7 = 1?
NO
SR5 = 0?
27
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Figure 10
READ-While-WRITE Concurrency
Bank a
1 - Erasing/writing to bank a
2 - Erasing in bank a can be
suspended, and a WRITE to
another block in bank a
can be initiated.
3 - After the WRITE in that block
is complete, an ERASE can
be resumed by writing an
ERASE RESUME command.
1 - Reading bank a
Bank b
1 - Reading from bank b
1 - Erasing/writing to bank b
2 - Erasing in bank b can be
suspended, and a WRITE to
another block in bank b
can be initiated.
3 - After the WRITE in that block
is complete, an ERASE can
be resumed by writing an
ERASE RESUME command.
READ-WHILE-WRITE/ERASE
CONCURRENCY
It is possible for the device to read from one bank
while erasing/writing to another bank. Once a bank
enters the WRITE/ERASE operation, the other bank
automatically enters read array mode. For example,
during a READ CONCURRENCY operation, if a PRO-
GRAM/ERASE command is issued in bank a, then bank
a changes to the read status mode and bank b defaults
to the read array mode. The device will read from bank
b if the latched address resides in bank b (see Figure
10). Similarly, if a PROGRAM/ERASE command is is-
sued in bank b, then bank b changes to read status
mode and bank a defaults to read array mode. When
returning to bank a, the device will read PROGRAM/
ERASE status if the latched address resides in bank a.
A correct bank address must be specified to read
the status register after returning from a concurrent
read in the other bank.
When reading the CFI or the chip protection regis-
ter, concurrent operation is not allowed on the top boot
device. Concurrent READ of the CFI or the chip protec-
tion register is only allowed when a PROGRAM or ERASE
operation is performed on bank b on the bottom boot
device. For a bottom boot device, reading of the CFI
table or the chip protection register is only allowed if
bank b is in read array mode. For a top boot device,
reading of the CFI table or the chip protection register
is only allowed if bank a is in read array mode.
READ CONFIGURATION REGISTER (RCR)
MODE
The SET READ CONFIGURATION REGISTER com-
mand is a WRITE operation to the read configuration
register (RCR). It is a two-cycle command sequence.
Read configuration setup is written, followed by a sec-
ond write that specifies the data to be written to the
read configuration register. The data is placed on the
address bus A0A15, and it is latched on the rising edge
of ADV#, CE#, or WE#, whichever occurs first. The read
configuration provides the read mode (burst, synchro-
nous, or asynchronous), burst order, latency counter,
and burst length. After executing this command, the
device returns to read array mode.
READ CONFIGURATION
The device supports three read configurations:
asynchronous, synchronous burst mode, and page
mode. The bit RCR15 (see Table 9) in the read configu-
ration register sets the read configuration. Asynchro-
nous random mode is the default read mode.
At power-up, the RCR is set to BFCFh.
Status registers and the device identification regis-
ter support asynchronous and single synchronous
READ operations only.
28
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
BIT #
DESCRIPTION
FUNCTION
15
Read Mode (RM)
0 = Synchronous Burst Access Mode
1 = Asynchronous/Page Access Mode (default)
14
Reserved
Default = 0
1311
Latency Counter (LC)
Sets the number of clock cycles before valid data out:
000 = Code 0 - reserved
001 = Code 1 - reserved
010 = Code 2 - reserved
011 = Code 3
100 = Code 4
101 = Code 5
110 = Code 6 - reserved
111 = Code 7 - reserved (default)
10
Wait Signal Polarity (WSP)
0 = WAIT signal is active LOW
1 = WAIT signal is active HIGH (default)
9
Hold Data Out (HDO)
Sets the data output configuration:
0 = Hold data for one clock
1 = Hold data for two clocks (default)
8
Wait Configuration (WC)
Controls the behavior of the WAIT# output signal:
0 = WAIT# asserted during delay
1 = WAIT# asserted one data cycle before delay (default)
7
Burst Sequence (BS)
Specifies the order in which data is addressed in synchronous
burst mode:
0 = Interleaved
1 = Linear (default)
6
Clock Configuration (CC)
Defines the clock edge on which the BURST operation starts and
data is referenced:
0 = Falling edge
1 = Rising edge (default)
5
Reserved
Default = 0
4
Deep Power-Down (DPD)
0 = No DPD mode (default)
1 = DPD mode
3
Burst Wrap (BW)
0 = Burst wraps within the burst length
1 = No burst wrap (default)
20
Burst Length (BL)
Sets the number of words the device will output in burst mode:
001 = 4 words
010 = 8 words
111 = Continuous burst (default)
Table 9
Read Configuration Register
RM
R
LC2
LC1
LC0
WSP
HDO
WC
15
14
13
12
11
10
9
8
BS
CC
R
DPD
BW
BL2
BL1
BL0
7
6
5
4
3
2
1
0
29
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
LATENCY COUNTER
The latency counter provides the number of clocks
that must elapse after ADV# is set active before data
will be available. This value depends on the input clock
frequency. See Table 10 for the specific input clock
frequency configuration code. Also, see Figure 11 for
the timing diagrams pertinent to codes 2, 3, and 4.
Table 10 illustrates the data output latency from
ADV#, active asynchronous access, and system strobe
for different latency counter codes.
HOLD DATA OUTPUT CONFIGURATION
The hold data output configuration specifies for
how many clocks data will be held valid. (See Figure
12.)
Figure 11
Latency Counter
CLK
DQ0DQ15
Hold
Data
1 CLK
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
DQ0DQ15
Hold
Data
2 CLK
VALID
OUTPUT
VALID
OUTPUT
A0A20
V
IH
V
IL
ADV#
V
IH
V
IL
DQ0DQ15
CLK
V
IH
V
IL
V
OH
V
O L
Code 3
Code 4
DQ0DQ15
V
OH
V
O L
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
ADDRESS
UNDEFINED
Figure 12
Hold Data Output Configuration
WAIT# CONFIGURATION
The wait configuration bit, RCR8, sets the behavior
of the WAIT# output signal. The WAIT# signal can be
active during output delay or one data cycle before
delay, when continuous burst length is enabled. WAIT#
= 1 indicates valid data when RCR10 = 0. WAIT# = 0
indicates invalid data when RCR10 = 0. The setting of
WAIT# before or during the delay (RCR8) will depend
on the system and CPU characteristic. If RCR3 = 1 (no
wrap mode), then WAIT# can also be enabled in a four-
or eight-word burst if the no-wrap burst crosses the
first eight-word boundary.
30
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
BURST SEQUENCE
The burst sequence specifies the address order of
the data in synchronous burst mode. It can be pro-
grammed as either linear or interleaved burst order.
Continuous burst length only supports linear burst
order. See Table 11 for more details.
CLOCK CONFIGURATION
The clock configuration configures the starting
burst cycle, output data, and WAIT# signal to be as-
serted on the rising or falling edge of the clock.
Table 11
Sequence and Burst Length
STARTING
NO
4-WORD
8-WORD
CONTINUOUS
ADDRESS
WRAP
WRAP
BURST LENGTH
BURST LENGTH
BURST
.
(DEC)
RCR3
RCR3
LINEAR
INTERLEAVED
LINEAR
INTERLEAVED
LINEAR
0
0
0-1-2-3
0-1-2-3
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-...
1
0
1-2-3-0
1-0-3-2
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
1-2-3-4-5-6-7-...
2
0
2-3-0-1
2-3-0-1
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
2-3-4-5-6-7-8-...
3
0
3-0-1-2
3-2-1-0
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
3-4-5-6-7-8-9-...
4
0
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-3
4-5-6-7-8-9-10-...
5
0
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
5-6-7-8-9-10-11-...
6
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
6-7-8-9-10-11-12-...
7
0
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
6-7-8-9-10-11-12-13-...
...
...
...
...
...
...
...
...
14
0
14-15-16-17-18-19-20-..
15
0
15-16-17-18-19-20-21-..
...
...
...
...
...
...
...
...
0
1
0-1-2-3
NA
0-1-2-3-4-5-6-7
NA
0-1-2-3-4-5-6-...
1
1
1-2-3-4
NA
1-2-3-4-5-6-7-8
NA
1-2-3-4-5-6-7-...
2
1
2-3-4-5
NA
2-3-4-5-6-7-8-9
NA
2-3-4-5-6-7-8-...
3
1
3-4-5-6
NA
3-4-5-6-7-8-9-10
NA
3-4-5-6-7-8-9-...
4
1
4-5-6-7-8-9-10-11
NA
4-5-6-7-8-9-10-...
5
1
5-6-7-8-9-10-11-12
NA
5-6-7-8-9-10-11...
6
1
6-7-8-9-10-11-12-13
NA
6-7-8-9-10-11-12...
7
1
...
7-8-9-10-11-12-13-14
NA
7-8-9-10-11-12-13...
...
...
...
...
...
...
...
...
14
1
...
14-15-16-17-18-19-20-...
15
1
15-16-17-18-19-20-21-...
Table 10
Clock Frequency vs. First Access Latency
1
FREQUENCY PERIOD
LATENCY
CLK CYCLES SYSTEM STROBE
(MHz)
(ns)
COUNTER
FOR FIRST
(ns)
CONFIGURATION
DATA
40
25
3
4
100
54
18.5
4
5
92.5
NOTE: 1. Data is valid only if
t
AKS
is applied.
31
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
BURST WRAP
The burst wrap option, RCR3, signals if a four- or an
eight-word linear burst access wraps within the burst
length or whether it crosses the eight-word boundary.
In wrap mode (RCR3 = 0) the four- or eight-word access
will wrap within the four or eight words, respectively. In
no-wrap mode (RCR3 = 1), the device operates simi-
larly to a continuous burst. For example, in a four-word
burst, no-wrap mode, the possible linear burst se-
quences that do not assert WAIT# are:
0-1-2-3
8-9-10-11
1-2-3-4
9-10-11-12
2-3-4-5
10-11-12-13
3-4-5-6
11-12-13-14
4-5-6-7
12-13-14-15
The worst-case delay is seen at the end of the eight-
word boundary: 7-8-9-10 and 15-16-17-18. In a four-
word burst, wrap mode, no WAIT# is asserted and the
possible wrap sequences are:
0-1-2-3
5-6-7-4
1-2-3-0
6-7-4-5
2-3-0-1
7-4-5-6
3-0-1-2
8-9-10-11
4-5-6-7
9-10-11-8
etc.
Refer to Table 11 for a list of acceptable sequences.
When the continuous burst option is selected, the in-
ternal address wraps to 000000h if the device is read
past the last address.
BURST LENGTH
The burst length defines the number of words the
device outputs. The device supports a burst length of
four or eight words. The device can also be set in con-
tinuous burst mode. In this mode the device linearly
outputs data until the internal burst counter reaches
the end of the burstable address space. RCR2 sets the
burst length.
CONTINUOUS BURST LENGTH
During continuous burst mode operation, the Flash
memory may have an output delay when the burst
sequence crosses the first eight-word boundary. Also,
in four- or eight-word bursts with the burst wrap set to
no wrap (RCR3 = 1), the Flash memory may have an
output delay when the burst sequence crosses the first
eight-word boundary. The starting address dictates
whether or not a delay occurs. If the starting address is
aligned with an eight-word boundary, the delay is not
seen. For a four-word burst, if the starting address is
aligned with a four-word boundary, a delay is not seen.
If the starting address is at the end of an eight-word
boundary, the output delay is the maximum delay,
equal to the latency counter setting.
The delay happens only once during a continuous
burst access. If the burst never crosses an eight-word
boundary, the WAIT# is not asserted. The activation of
WAIT# informs the system if this output delay occurs.
Table 12
Block Locking State Transition
ERASE/PROG
LOCK
WP#
DQ1
DQ0
NAME
ALLOWED
LOCK
UNLOCK
DOWN
0
0
0
Unlocked
Yes
To [001]
No Change
To [011]
0
0
1
Locked (Default)
No
No Change
To [000]
To [011]
0
1
1
Lock Down
No
No Change
No Change
No Change
1
0
0
Unlocked
Yes
To [101]
No Change
To [111]
1
0
1
Locked
No
No Change
To [100]
To [111]
1
1
0
Lock Down
Yes
To [111]
No Change
To [111]
Disabled
1
1
1
Lock Down
No
No Change
To [110]
No Change
Disabled
32
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
WAIT# SIGNAL IN BURST MODE
In the continuous burst mode or in the four- or eight-
word burst mode with no wrap (RCR3 = 1), the output
WAIT# informs the system when data is valid. When
WAIT# is asserted during delay (RCR8 = 0), WAIT# = 1
indicates valid data and WAIT# = 0 indicates invalid
data. If RCR8 = 0, WAIT# is asserted on the same cycle
on which the delay occurs. If RCR8 = 1, WAIT# is as-
serted one cycle before the delay occurs.
BLOCK LOCKING
The Flash devices provide a flexible locking scheme
that allows each block to be individually locked or un-
locked with no latency.
The devices offer two-level protection for the blocks.
The first level allows software-only control of block lock-
ing (for data that needs to be changed frequently),
while the second level requires hardware interaction
before locking can be changed (code which does not
require frequent updates).
Control signals WP#, DQ1, and DQ0 define the state
of a block; for example, state [001] means WP# = 0, DQ1
= 0 and DQ0 = 1.
Table 12 defines all of the possible locking states.
NOTE: All blocks are software-locked upon comple-
tion of a power-up sequence.
LOCKED STATE
After a power-up sequence completion, or after a
reset sequence, all blocks are locked (states [001] or
[101]). This means full protection from alteration. Any
PROGRAM or ERASE operations attempted on a locked
block will return an error on bit SR1 of the status regis-
ter. The status of a locked block can be changed to
unlocked or lock down using the appropriate software
commands. Writing the lock command sequence, 60h
followed by 01h, can lock an unlocked block.
UNLOCKED STATE
Unlocked blocks (states [000], [100], [110]) can be
programmed or erased. All unlocked blocks return to
the locked state when the device is reset or powered
down. An unlocked block can be locked or locked down
using the appropriate software command sequence,
60h followed by D0h (see Table 4).
LOCKED DOWN STATE
Blocks that are locked down (state [011]) are pro-
tected from PROGRAM and ERASE operations, but their
protection status cannot be changed using software
commands alone. A locked or unlocked block can be
locked down by writing the lock down command se-
quence, 60h followed by 2Fh. Locked down blocks re-
vert to the locked state when the device is reset or
powered down.
The LOCK DOWN function is dependent on the WP#
input. When WP# = 0, blocks in lock down [011] are
protected from program, erase, and lock status
changes. When WP# = 1, the lock down function is dis-
abled ([111]), and locked down blocks can be individu-
ally unlocked by a software command to the [110] state,
where they can be erased and programmed. These
blocks can then be relocked [111] and unlocked [110]
as desired while WP# remains HIGH. When WP# goes
LOW, blocks that were previously locked down return
to the locked down state [011] regardless of any
changes made while WP# was HIGH. Device reset or
power-down resets all locks, including those in lock
down, to locked state (see Table 13).
READING A BLOCK'S LOCK STATUS
The lock status of every block can be read in the
read device identification mode. To enter this mode,
write 90h to the device. Subsequent READs at block
address +00002 will output the lock status of that block.
The lowest two outputs, DQ0 and DQ1, represent the
lock status. DQ0 indicates the block lock/unlock status
and is set by the LOCK command and cleared by the
UNLOCK command. It is also automatically set when
entering lock down. DQ1 indicates lock down status
and is set by the LOCK DOWN command. It can only be
cleared by reset or power-down, not by software. Table
12 shows the locking state transition scheme.
LOCKING OPERATIONS DURING ERASE
SUSPEND
Changes to block lock status can be performed dur-
ing an ERASE SUSPEND by using the standard locking
command sequences to unlock, lock, or lock down. This
is useful in the case when another block needs to be
updated while an ERASE operation is in progress.
To change block locking during an ERASE opera-
tion, first write the ERASE SUSPEND command (B0h),
then check the status register until it indicates that the
ERASE operation has been suspended. Next, write the
desired lock command sequence to block lock, and the
lock status will be changed. After completing any de-
sired LOCK, READ, or PROGRAM operation, resume
the ERASE operation with the ERASE RESUME com-
mand (D0h).
If a block is locked or locked down during an
ERASE SUSPEND operation on the same block, the
locking status bits will be changed immediately. Then,
when the ERASE is resumed, the ERASE operation will
complete.
A locking operation cannot be performed during a
PROGRAM SUSPEND.
33
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
STATUS REGISTER ERROR CHECKING
Using nested locking or program command se-
quences during erase suspend can introduce ambigu-
ity into status register results.
Following protection configuration setup (60h), an
invalid command will produce a lock command error
(SR4 and SR5 will be set to "1") in the status register. If
a lock command error occurs during an ERASE SUS-
PEND, SR4 and SR5 will be set to "1" and will remain at
"1" after the ERASE SUSPEND is resumed. When the
ERASE is complete, any possible error during the ERASE
cannot be detected via the status register because of
the previous locking command error.
A similar situation happens if an error occurs during
a program operation error nested within an ERASE
SUSPEND.
CHIP PROTECTION REGISTER
A 128-bit chip protection register can be used to
fulfill the security considerations in the system (pre-
venting device substitution).
The 128-bit security area is divided into two 64-bit
segments. The first 64 bits are programmed at the
manufacturing site with a unique 64-bit unchange-
able number. The other segment is left blank for cus-
tomers to program as desired. (See Figure 13).
READING THE CHIP PROTECTION REGISTER
The chip protection register is read in the device
identification mode. To enter this mode, load the 90h
command to the bank containing address 00h. Once in
this mode, READ cycles from addresses shown in Table
13 retrieve the specified information. To return to the
read array mode, write the READ ARRAY command
(FFh).
Figure 13
Protection Register Memory Map
4 Words
Factory-Programmed
4 Words
User-Programmed
PR Lock
0
88h
85h
84h
81h
80h
ITEM
ADDRESS
2
DATA
Manufacturer Code (x16)
00000h
002Ch
Device Code
00001h
Top boot configuration
44B6
Bottom boot configuration
44B7
Block Lock Configuration
XX002h
Lock
Block is unlocked
DQ0 = 0
Block is locked
DQ0 = 1
Block is locked down
DQ1 = 1
Read Configuration Register
00005h
RCR
Chip Protection Register Lock
80h
PR Lock
Chip Protection Register 1
81h84h
Factory Data
Chip Protection Register 2
85h88h
User Data
NOTE: 1. Other locations within the configuration address space are reserved by
Micron for future use.
2. "XX" specifies the block address of lock configuration.
Table 13
Chip Configuration Addressing
1
34
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
PROGRAMMING THE CHIP PROTECTION
REGISTER
The first 64 bits (PR1) of the chip protection register
(addresses 81h84h) are programmed with a unique
identifier at the factory. DQ0 of the PR lock register
(address 80h) is programmed to a "0" state, locking the
first 64 bits and preventing any further programming.
The second 64 bits (PR2) is a user area (addresses
85h88h), where the user can program any informa-
tion into this area as long as DQ1 of the PR lock register
remains unprogrammed. After DQ1 of the PR lock reg-
ister is programmed, no further programming is allowed
on PR2. The programming sequence is similar to array
programming except that the PROTECTION REGIS-
TER PROGRAMMING SETUP command (C0h) is issued
instead of an ARRAY PROGRAMMING SETUP com-
mand (40h), followed by the data to be programmed at
addresses 85h88h.
To program the PR lock bit for PR2 (to prevent fur-
ther programming), use the above sequence on ad-
dress 80h, with data of FFFDh (DQ1 = 0).
ASYNCHRONOUS READ MODE
The asynchronous read mode is the default
read configuration state. To use the device in an
asynchronous-only application, ADV# and CLK must
be tied to V
SS
and WAIT# should be floated.
Toggling the address lines from A0 to A21, the ac-
cess is purely random (
t
AA).
The ADV# signal must be toggled to latch the ad-
dress, and the CE# signal and the OE# signal must go
LOW. In this case the data is placed on the data bus and
the processor is ready to receive the data.
SYNCHRONOUS BURST READ MODE
The burst read mode is used to achieve a faster data
rate than is possible with asynchronous read mode.
The rising edge of the clock (CLK) is used to latch the
address with CE# and ADV# LOW (see timing diagram:
Single Synchronous READ Operation). The burst read
configuration is set in the read configuration register,
where frequency, data output, WAIT# signal, burst se-
quence, clock, and burst length are configured setting
the related bits.
All blocks in both banks can be burst read.
The BURST READ works across the bank boundary
in the following way:
1. In a READ operation there is no bank boundary as
far as burst access is concerned. If, for example, a
burst starts in bank a, the application can keep clock-
ing until the bank boundary is reached and then
read from bank b. If the application keeps clocking
beyond the last location of bank b, the internal
counter restarts from bank a first address. (See
Figure 14.)
2. If one bank is in program or erase mode and the
application starts a burst access in that bank, then
the status register data is returned. The internal
address counter is incremented at every clock pulse.
3. If a burst access is started in one bank and the bank
boundary is crossed, and the other bank is in pro-
gram or erase mode, then the status register data is
returned as the first location of the bank. If the ap-
plication keeps clocking, the internal address
counter gets incremented at every clock cycle. If
bank end is crossed, then data from the other bank
is returned as shown in Figure 14.
Bank a start address
bank boundary
Bank a
Bank b
0 00000h
Bank a end address
0 FFFFFh
Bank b start address
0 100000h
Bank b end address
1 3FFFFFh
Figure 14
Bank Boundary Wrapping
(Bottom Boot Example)
35
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
ASYNCHRONOUS PAGE READ MODE
After power-up or reset, the device operates in page
mode over the whole memory array. The page size can
be customized at the factory to four or eight words as
required; but if no specification is made, the normal
size is eight words. The initial portion of the page mode
cycle is the same as the asynchronous access cycle.
Holding CE# LOW and toggling addresses A0A2 al-
lows random access of other words in the page.
V
PP
/V
CC
PROGRAM AND ERASE
VOLTAGES
The Flash devices provide in-system programming
and erase with V
PP
in the 0.9V2.20V range. The 12V V
PP
mode programming is offered for compatibility with
existing programming equipment, and it allows the
APA execution as well.
The device can withstand 100,000 WRITE/ERASE
operations, irrespective of the external V
PP
applied be-
cause the memory cells are always programmed using
the internal power sources. This provides an optimal
voltage profile in order to minimize the programming
stress.
In addition to the flexible block locking, the V
PP
pro-
gramming voltage can be held LOW for absolute hard-
ware write protection of all blocks in the Flash device.
When V
PP
is below V
PPLK
, any PROGRAM or ERASE op-
eration will result in an error, prompting the correspond-
ing status register bit (SR3) to be set.
During WRITE and ERASE operations, the WSM
monitors the V
PP
voltage level. WRITE/ERASE opera-
tions are allowed only when V
PP
is within the ranges
specified in Table 14.
When V
CC
is below V
LKO
, any WRITE/ERASE opera-
tion will be disabled.
ming, the device continues to draw current until the
operation is complete.
AUTOMATIC POWER SAVE (APS) MODE
Substantial power savings are realized during peri-
ods when the array is not being read and the device is in
the active mode. During this time the device switches
to the automatic power save mode. When the device
switches to this mode, I
CC
is reduced to a level compa-
rable to I
CC
4
. Further power savings can be realized by
applying a logic HIGH level on CE# to place the device
in standby mode. The low level of power is maintained
until another operation is initiated. In this mode, the
I/Os retain the data from the last memory address read
until a new address is read. This mode is entered auto-
matically if no address or control signals toggle.
DEVICE RESET
To correctly reset the Flash devices, the RST# signal
must be asserted (RST# = V
IL
) for a minimum of
t
RP.
After reset, the device can be accessed for a READ op-
eration with a delayed access time of
t
RWH from the
rising edge of RST#. RST# should be tied to the system
reset to ensure that correct system initialization occurs.
Please refer to the timing diagram for further details.
DEEP POWER-DOWN
When RCR4 = 1, deep power-down can be enabled.
In this configuration, applying a logic LOW to RST#
reduces the current to I
CC
10
and resets all the internal
registers, with the exception of the RCR and the indi-
vidual block protection status. To exit this mode, a wait
time of 100s (
t
RWHDP) must elapse after a logic HIGH
is applied to RST#.
During the wait time, the device performs a full
power-up sequence, and the power consumption may
exceed the standby current limits.
POWER-UP SEQUENCE
The following power-up sequence is recommended
to initialize internal chip operations:
At power-up, RST# should be kept at V
IL
for 2
s
after V
CC
reaches V
CC
(MIN).
V
CC
Q should not come up before V
CC
.
V
PP
should be kept at V
IL
to maximize data
integrity.
When the power-up sequence is completed, RST#
should be brought to V
IH
. To ensure a proper power-up,
the rise time of RST# (10%90%) should be < 10s.
Table 14
V
PP
Range (V)
MIN
MAX
In System
0.9
2.2
In Factory
11.4
12.6
STANDBY MODE
I
CC
supply current is reduced by applying a logic
HIGH level on CE# and RST# to enter the standby
mode. In the standby mode, the outputs are High-Z.
Applying a CMOS logic HIGH level on CE# and RST#
reduces the current to I
CC
4
(MAX). If the device is dese-
lected during an ERASE operation or during program-
36
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS*
Voltage to Any Ball Except V
CC
and V
PP
with Respect to V
SS
....................... -0.5V to +2.45V
V
PP
Voltage (for BLOCK ERASE and PROGRAM
with Respect to V
SS
) ................. -0.5V to +13.5V**
V
CC
and V
CC
Q Supply Voltage
with Respect to V
SS
....................... -0.3V to +2.45V
Output Short Circuit Current ............................... 100mA
Operating Temperature Range ............ -40
o
C to +85
o
C
Storage Temperature Range ............... -55
o
C to +125
o
C
Soldering Cycle .......................................... 260
o
C for 10s
*Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum DC voltage on V
PP
may overshoot to +13.5V
for periods < 20ns.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
Operating temperature
t
A
-40
+85
o
C
V
CC
supply voltage (MT28F642D18)
V
CC
1.70
1.90
V
V
CC
supply voltage (MT28F642D20)
V
CC
1.80
2.20
V
I/O supply voltage (V
CC
= 1.701.90V)
V
CC
Q
1.70
1.90
V
I/O supply voltage (V
CC
= 1.802.25V)
V
CC
Q
1.80
2.25
V
V
PP
voltage, when used as logic control
V
PP
1
0.9
2.20
V
V
PP
in-factory programming voltage
V
PP
2
11.4
12.6
V
Block erase cycling
V
PP
= V
PP
1
V
PP
1
100,000
Cycles
Block erase cycling
V
PP
= V
PP
2
V
PP
2
100
Cycles
1
NOTE: 1. V
PP
= V
PP
2
is a maximum of 10 cumulative hours.
37
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Figure 16
Output Load Circuit
I/O
14.5K
30pF
V
CC
V
SS
14.5K
Output
Test Points
Input
V
CC
V
SS
AC test inputs are driven at V
CC
for a logic 1 and V
SS
for a logic 0. Input timing begins at V
CC
/2,
and output timing ends
at V
CC
Q/2. Input rise and fall times (10% to 90%) < 5ns.
V
CC
Q/2
V
CC
/2
Figure 15
AC Input/Output Reference Waveform
CAPACITANCE
(T
A
= +25C; f = 1 MHz)
PARAMETER/CONDITION
1
SYMBOL
TYP
MAX
UNITS
Input Capacitance
C
7
12
p F
Output Capacitance
C
OUT
9
12
p F
38
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
DC CHARACTERISTICS
1
MT28F642D20
MT28F642D18
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Input Low Voltage
V
IL
0
0.4
V
2
Input High Voltage
V
IH
V
CC
Q - 0.4V
V
CC
Q
V
2
Output Low Voltage
V
OL
0.1
V
I
OL
= 100
A
Output High Voltage
V
OH
V
CC
Q - 0.1V
V
I
OH
= -100
A
V
PP
Lockout Voltage
V
PPLK
0.4
V
V
PP
During PROGRAM/ERASE Operations
V
PP
1
0.9
2.2
V
V
PP
2
11.4
12.6
V
V
CC
Program/Erase Lock Voltage
V
LKO
1
V
Input Leakage Current
I
L
1
A
Output Leakage Current
I
OZ
0.2
1
A
V
CC
Read Current
I
CC
1
3, 4
Asynchronous Random Read, 70ns cycle
15
mA
V
CC
Page Mode Read Current, 70ns/30ns cycle
I
CC
2
5
mA
3, 4
V
CC
Burst Mode Read Current, 18.5ns cycle
I
CC
3
10
mA
4
V
CC
Standby Current
I
CC
4
25
50
A
V
CC
Program Current
I
CC
5
55
mA
V
CC
Erase Current
I
CC
6
65
mA
V
CC
Erase Suspend Current
I
CC
7
25
50
A
5
V
CC
Program Suspend Current
I
CC
8
25
50
A
5
Read-While-Write Current
I
CC
9
80
mA
Deep Power-Down Current
I
CC
10
15
25
A
V
PP
Current
I
PP
1
(Read, Standby, Erase Suspend,
Program Suspend)
V
PP
V
CC
1
A
V
PP
V
CC
200
A
NOTE: 1. All currents are in RMS unless otherwise noted.
2. V
IL
may decrease to -0.4V, and V
IH
may increase to V
CC
Q + 0.3V for durations not to exceed 20ns.
3. APS mode reduces I
CC
to approximately I
CC
4
levels.
4. Test conditions: V
CC
= V
CC
(MAX), CE# = V
IL
, OE# = V
IH
. All other inputs = V
IH
or V
IL
.
5. I
CC
7
and I
CC
8
values are valid when the device is deselected. Any READ operation performed while in suspend mode will
have an additional current draw of suspend current (I
CC
7
or I
CC
8
).
39
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
ASYNCHRONOUS READ CYCLE TIMING REQUIREMENTS
1
- 7 0
-80
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNITS
NOTES
Address setup to ADV# HIGH
t
AVS
10
10
CE# LOW to ADV# HIGH
t
CVS
10
10
READ cycle time
t
RC
70
80
Address to output delay
t
AA
70
80
ns
CE# LOW to output delay
t
ACE
70
80
ns
ADV# LOW to output delay
t
AADV
70
80
ADV# pulse width LOW
t
VP
10
10
ADV# pulse width HIGH
t
VPH
10
10
Address hold from ADV# HIGH
t
AVH
3
3
Page address access
t
APA
30
30
ns
OE# LOW to output delay
t
AOE
25
25
ns
RST# HIGH to output delay
t
RWH
ns
2
CE# or OE# HIGH to output High-Z
t
OD
15
25
ns
Output hold from address, CE# or OE# change
t
OH
0
0
ns
RST# deep power-down
t
RWHDP
100
100
s
BURST READ CYCLE TIMING REQUIREMENTS
1
-705
-804
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNITS
CLK period
t
CLK
18.5
25
ns
CLK HIGH (LOW) time
t
KP
5
7.5
ns
CLK fall (rise) time
t
KHKL
3
5
ns
Address valid set up to clock
t
AKS
7
7
ns
ADV# LOW set to CLK
t
VKS
7
7
ns
CE# LOW set to CLK
t
CKS
9
13
ns
CLK to output delay
t
ACLK
15
20
ns
Output hold from CLK
t
KOH
3.5
5
ns
Address hold from CLK
t
AKH
10
10
ns
CLK to WAIT# delay
t
KHTL
15
20
ns
CE# HIGH between subsequent synchronous READs
t
CBPH
20
20
ns
NOTE: 1. See Figures 17 and 18 for timing requirements and load configuration.
2. For the MT28F642D18,
t
RWH = 250ns (MAX); for the MT28F642D20,
t
RWH = 200ns (MAX).
40
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
WRITE CYCLE TIMING REQUIREMENTS
-70/-80
PARAMETER
SYMBOL
MIN
MAX
UNITS
HIGH recovery to WE# going LOW
t
RS
150
ns
CE# setup to WE# going LOW
t
CS
0
ns
Write pulse width
t
WP
70
ns
ADV# pulse width
t
VP
10
ns
Data setup to WE# going HIGH
t
DS
70
ns
Address setup to WE# going HIGH
t
AS
50
ns
ADV# setup to WE# going HIGH
t
VS
70
ns
Address setup to ADV# going HIGH
t
AVS
10
ns
CE# hold from WE# HIGH
t
CH
0
ns
Data hold from WE# HIGH
t
DH
0
ns
Address hold from WE# HIGH
t
AH
0
ns
Address hold to ADV# going HIGH
t
AVH
3
ns
Write pulse width High
t
WPH
30
ns
RST# pulse width
t
RP
100
ns
WP# setup to WE# going HIGH
t
RHS
0
ns
V
PP
setup to WE# going HIGH
t
VPS
200
ns
Write recovery before Read
t
WOS
50
ns
WP# hold from valid SRD
t
RHH
0
ns
V
PP
hold from valid SRD
t
VPPH
0
ns
WE# HIGH to data valid
t
WB
t
AA + 50
ns
ERASE AND PROGRAM TIMING REQUIREMENTS
-70/-80
PARAMETER
TYP
MAX
UNITS
4 KW parameter block program time
40
800
ms
32 KW parameter block program time
320
6,400
ms
Word program time
8
10,000
s
4 KW parameter block erase time
0.3
6
s
32 KW parameter block erase time
0.5
6
s
Program suspend latency
5
10
s
Erase suspend latency
5
20
s
Chip programming time (APA)
20
s
41
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
SINGLE ASYNCHRONOUS READ OPERATION
VALID ADDRESS
UNDEFINED
t
OD
t
AA
t
ACE
t
OH
A0A21
OE#
CE#
WE#
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
t
RC
WAIT#
1
V
OH
V
OL
t
RWH
ADV#
V
IH
V
IL
DQ0DQ15
RST#
V
OH
V
OL
VALID OUTPUT
High-Z
High-Z
t
AOE
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
READ TIMING PARAMETERS
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
t
AA
70
80
n s
t
ACE
70
80
n s
t
AOE
25
25
n s
t
R C
70
80
n s
t
RWH
2
n s
t
O D
15
25
n s
t
O H
0
0
n s
NOTE: 1. WAIT# is shown active LOW.
2. For the MT28F642D18,
t
RWH = 250ns (MAX); for the MT28F642D20,
t
RWH = 200ns (MAX).
42
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
ASYNCHRONOUS PAGE MODE READ OPERATION
VALID ADDRESS
VALID
ADDRESS
VALID
ADDRESS
VALID
ADDRESS
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
UNDEFINED
t
OD
t
AA
t
ACE
t
OH
t
APA
t
AOE
A0A2
OE#
CE#
WE#
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
VALID ADDRESS
A3A21
V
IH
V
IL
WAIT#
1
V
OH
V
OL
t
RWH
ADV#
V
IH
V
IL
DQ0DQ15
RST#
V
OH
V
OL
High-Z
High-Z
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
READ TIMING PARAMETERS
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
t
AA
70
80
ns
t
ACE
70
80
ns
t
AOE
25
25
ns
t
RC
70
80
ns
t
RWH
1
ns
t
OD
15
25
ns
t
OH
0
0
ns
NOTE: 1. WAIT# is shown active LOW.
2. For the MT28F642D18,
t
RWH = 250ns (MAX); for the MT28F642D20,
t
RWH = 200ns (MAX).
43
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
SINGLE SYNCHRONOUS READ OPERATION
A0A21
V
IH
V
IL
ADV#
V
IH
V
IL
CE#
V
IH
V
IL
OE#
V
IH
V
IL
WE#
V
IH
V
IL
WAIT#
1
DQ0DQ15
V
OH
V
OL
CLK
V
IH
V
IL
UNDEFINED
V
OH
V
O L
t
AKS
t
VP
t
AOE
t
VKS
t
AKH
t
AA
t
AADV
VALID
OUTPUT
VALID
ADDRESS
High-Z
t
VPH
t
AVH
t
KOH
t
OH
t
ACLK
t
OD
t
CVS
t
CKS
t
ACE
High-Z
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
READ TIMING PARAMETERS
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
t
AKS
7
7
n s
t
VKS
7
7
n s
t
CKS
9
13
n s
t
KOH
3.5
5
n s
t
AKH
10
10
n s
t
CVS
10
10
t
AA
70
80
n s
t
ACE
70
80
n s
t
AADV
70
80
t
VP
10
10
t
VPH
10
10
t
AVH
3
3
t
AOE
25
25
n s
t
OD
15
25
n s
t
OH
0
0
n s
NOTE: 1. WAIT# is shown active LOW.
44
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
4-WORD SYNCHRONOUS BURST OPERATION
WE#
V
IH
V
IL
A0A21
V
IH
V
IL
ADV#
V
IH
V
IL
CE#
V
IH
V
IL
OE#
V
IH
V
IL
WAIT#
1
DQ0DQ15
V
OH
V
OL
CLK
V
IH
V
IL
UNDEFINED
V
OH
V
O L
t
AKS
t
VP
t
CBPH
t
AOE
t
VKS
t
AKH
t
AA
t
AADV
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
ADDRESS
High-Z
High-Z
High-Z
t
VPH
t
OH
t
KOH
t
ACLK
t
CVS
t
CKS
t
ACE
t
OD
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
READ TIMING PARAMETERS
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
t
AKS
7
7
n s
t
VKS
7
7
n s
t
CKS
9
13
n s
t
KOH
3.5
5
n s
t
AKH
10
10
n s
t
CVS
10
10
t
AA
70
80
n s
t
ACE
70
80
n s
t
AADV
70
80
t
VP
10
10
t
VPH
10
10
t
AVH
3
3
t
AOE
25
25
n s
t
OD
15
25
n s
t
OH
0
0
n s
NOTE: 1. WAIT# is shown active LOW.
45
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
CONTINUOUS BURST READ
SHOWING AN OUTPUT DELAY WITH RCR8 = 0(1)
A0A21
V
IH
V
IL
ADV#
V
IH
V
IL
CE#
V
IH
V
IL
OE#
V
IH
V
IL
WE#
V
IH
V
IL
WAIT#
1
DQ0DQ15
V
OH
V
OL
CLK
V
IH
V
IL
UNDEFINED
V
OH
V
O L
t
ACLK
t
KOH
t
KHTL
t
KHTL
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
INVALID
OUTPUT
t
CLK
t
KP
t
KHKL
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
READ TIMING PARAMETERS
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
t
CLK
18.5
25
n s
t
KP
5
7.5
n s
t
KHKL
3
5
n s
t
ACLK
15
20
n s
t
KOH
3.5
5
n s
t
KHTL
15
20
n s
NOTE: 1. WAIT# is shown active LOW.
46
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
TWO-CYCLE PROGRAMMING/ERASE OPERATION
VALID ADDRESS
VALID ADDRESS
VALID ADDRESS
UNDEFINED
t
CH
t
CH
t
RHS
t
DS
t
AVS
t
AVH
A0A21
OE#
CE#
WE#
V
PP
RST#
WP#
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IPPLK
V
IL
V
IPPH
t
AS
t
AH
t
WPH
t
RS
CMD
t
VPH
t
WOS
ADV#
V
IH
V
IL
t
VP
t
VS
t
CS
t
WB
CMD/
DATA
CMD/
DATA
DQ0DQ15
V
IH
V
IL
t
RHH
t
VPS
t
VPPH
STATUS
High-Z
-70/-80
SYMBOL
MIN
MAX
UNITS
WRITE TIMING PARAMETERS
-70/-80
SYMBOL
MIN
MAX
UNITS
t
RS
150
n s
t
CS
0
n s
t
WP
70
n s
t
VP
10
n s
t
DS
70
n s
t
AS
50
n s
t
VS
70
n s
t
AVS
10
n s
t
CH
0
n s
t
DH
0
n s
t
AH
0
n s
t
AVH
3
n s
t
WPH
30
n s
t
RP
100
n s
t
RHS
0
n s
t
VPS
200
n s
t
WOS
50
n s
t
RHH
0
n s
t
VPPH
0
n s
t
WB
t
AA + 50
n s
47
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
RESET OPERATION
OE#
DQ0DQ15
V
IH
V
IL
RST#
V
IH
V
IL
CE#
V
IH
V
IL
V
OH
V
OL
t
RWH
t
RP
READ AND WRITE TIMING PARAMETERS
-70
-80
SYMBOL
MIN
MAX
MIN
MAX
UNITS
t
RWH
1
ns
t
RP
100
100
ns
NOTE: 1. For the MT28F642D18,
t
RWH = 250ns (MAX); for the MT28F642D20,
t
RWH = 200ns (MAX).
48
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
(continued on next page)
Table 15
CFI
OFFSET
DATA
DESCRIPTION
0
2Ch
Manufacturer code
1
B6h
Top boot block device code
B7h
Bottom boot block device code
02 0F
reserved
Reserved
10,11
0051, 0052
"QR"
12
0059
"Y"
13, 14
0003, 0000
Primary OEM command set
15, 16
0039, 0000
Address for primary extended table
17, 18
0000, 0000
Alternate OEM command set
19, 1A
0000, 0000
Address for OEM extended table
1B
0017
V
DD
MIN for Erase/Write; Bit7Bit4 Volts in BCD, Bit3Bit0 100mV in BCD
1C
0022
V
DD
MAX for Erase/Write; Bit7Bit4 Volts in BCD, Bit3Bit0 100mV in BCD
1D
00B4
V
PP
MIN for Erase/Write; Bit7Bit4 Volts in Hex, Bit3Bit0 100mV in BCD, 0000 = V
PP
pin
1E
00C6
V
PP
MAX for Erase/Write; Bit7Bit4 Volts in Hex, Bit3Bit0 100mV in BCD, 0000 = V
PP
pin
1F
0003
Typical timeout for single byte/word program, 2
n
s, 0000 = not supported
20
0000
Typical timeout for maximum size multiple byte/word program, 2
n
s, 0000 = not
supported
21
0009
Typical timeout for individual block erase, 2
n
ms, 0000 = not supported
22
0000
Typical timeout for full chip erase, 2
n
ms, 0000 = not supported
23
000C
Maximum timeout for single byte/word program, 2
n
s, 0000 = not supported
24
0000
Maximum timeout for maximum size multiple byte/word program, 2
n
s, 0000 = not
supported
25
0003
Maximum timeout for individual block erase, 2
n
ms, 0000 = not supported
26
0000
Maximum timeout for full chip erase, 2
n
ms, 0000 = not supported
27
0017
Device size, 2
n
bytes
28
0001
Bus interface, x8 = 0, x16 = 1, x8/x16 = 2
29
0000
Flash device interface description, 0000 = async
2A, 2B
0000, 0000
Maximum number of bytes in multibyte program or page, 2
n
2C
0003
Number of erase block regions within device (4K words and 32K words)
2D, 2E
005F0000
Top boot block device erase block region information 1, 96 blocks ...
00070000
Bottom boot block device erase block region information 1, 8 blocks ...
2F, 30
00000001
Top boot block device .....of 64KB
00200000
Bottom boot block device .....of 8KB
31, 32
001E0000
31 blocks of
33, 34
00000001
......64KB
35, 36
00070000
Top boot block device ...8 blocks of
005F0000
Bottom boot block device ...96 blocks of
49
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
Table 15 (continued)
CFI
OFFSET
DATA
DESCRIPTION
37, 38
00200000
Top boot block device .....of 8KB
00000001
Bottom boot block device .....of 64KB
39, 3A
0050, 0052
"PR"
3B
0049
"I"
3C
0030
Major version number, ASCII
3D
0031
Minor version number, ASCII
3E
00E6
Optional Feature and Command Support
3F
0003
Bit 0 Chip erase supported no = 0
40
0000
Bit 1 Suspend erase supported = yes = 1
41
0000
Bit 2 Suspend program supported = yes = 1
Bit 3 Chip lock/unlock supported = no = 0
Bit 4 Queued erase supported = no = 0
Bit 5 Instant individual block locking supported = yes = 1
Bit 6 Protection bits supported = yes = 1
Bit 7 Page mode read supported = yes = 1
Bit 8 Synchronous read supported = yes = 1
Bit 9 Simultaneous operation supported = yes = 1
42
0001
Program supported after erase suspend = yes
43, 44
0003, 0000
Bit 0 block lock status active = yes, Bit 1 block lock down active = yes
45
0018
V
CC
supply optimum, 00 = not supported, D7D4 BCD V, D3D0 100mV
46
00C0
V
PP
supply optimum, 00 = not supported, D7D4 Hex V, D3D0 100mV
47
0001
Number of protection register files in JEDEC ID space
48, 49
0080, 0000
Lock bytes LOW address, lock bytes HIGH address
4A, 4B
0003, 0003
2
n
factory programmed bytes, 2
n
user programmable bytes
4C
0003
Background Operation
0000 = Not used
0001 = 4% block split
0002 = 12% block split
0003 = 25% block split
0004 = 50% block split
4D
0072
Burst Mode Type
0000 = No burst mode
00x1 = 4 words MAX
00x2 = 8 words MAX
00x3 = 16 words MAX
001x = Linear burst, and/or
002x = Interleaved burst, and/or
003x = Continuous burst
4E
0002
Page Mode Type
0000 = No page mode
0001 = 4-word page
0002 = 8-word page
0003 = 16-word page
0004 = 32-word page
4F
0000
Not used
50
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
NOTE: 1. All dimensions in millimeters.
2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.
59- BALL FBGA
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron and the M logo are registered trademarks and the Micron logo is a trademark of Micron Technology, Inc.
0.80 0.075
0.10 C
C
SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb or
62% Sn, 37% Pb, 2%Ag
SOLDER BALL PAD: .27mm
BALL #1 ID
ENCAPSULATION MATERIAL: EPOXY NOVOLAC
SUBSTRATE: PLASTIC LAMINATE
0.75
TYP
12.00 0.10
4.50
1.50 (4X)
SUPPORT BALLS
(4X)
2.25 0.05
6.00 0.05
BALL #1 ID
BALL A1
0.75
TYP
4.00 0.05
2.625 0.05
5.25
8.00 0.10
BALL A8
SEATING PLANE
1.20 MAX
SOLDER BALL DIAMETER
REFERS TO POST REFLOW
CONDITION. THE
PRE-REFLOW DIAMETER
IS 0.33
0.35 TYP
59X
C
L
C
L
DATA SHEET DESIGNATION
No Mark: This data sheet contains minimum and maximum limits specified over the complete power supply and
temperature range for production devices. Although considered final, these specifications are subject
to change, as further product development and data characterization sometimes occur.
51
4 Meg x 16 Async/Page/Burst Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28F642D18_4.p65 Rev. 4, Pub. 10/02
2002, Micron Technology, Inc.
4 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
REVISION HISTORY
Rev. 4 ...................................................................................................................................................................................... 10/02
ADVANCE designation removed.
Rev. 3, ADVANCE .................................................................................................................................................................... 8/02
Clarified device specific V
CC
, V
CC
Q and V
PP
voltages.
Rev. 2, ADVANCE .................................................................................................................................................................... 7/02
Changed low power consumption voltage from 1.90V to 2.20V
Corrected top boot block device address range for blocks 123 and 125
Corrected Output Disable row in Bus Operations table
Updated Status Register section
Updated command descriptions
Updated flowcharts
Updated Read-While-Write/EraseConcurrency section
Updated Read Configuration Register table
Corrected addresses in Bank Boundary Wrapping figure
Updated timing diagrams
Corrected CFI table
Original document, ADVANCE, Rev. 1 ............................................................................................................................... 3/02