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Электронный компонент: MT36LSDF12872G-13E__

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1
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
SYNCHRONOUS
DRAM MODULE
MT36LSDF6472G - 512MB
MT36LSDF12872G - 1GB
For the latest data sheet, please refer to the Micron Web
site:
www.micron.com/datasheets
FEATURES
JEDEC-standard, 168-pin, dual in-line memory
module (DIMM)
PC100 and PC133 compliant
FBGA-packaged SDRAM components
Registered inputs with one-clock delay
Phase-lock loop (PLL) clock driver to reduce
loading
Utilizes 100 MHz and 133 MHz SDRAM compo-
nents
ECC-optimized pinout
Single +3.3V 0.3V power supply
Fully synchronous; all signals registered on
positive edge of PLL clock
Internal pipelined operation; column address can
be changed every clock cycle
Internal SDRAM banks for hiding row access/
precharge
Programmable burst lengths: 1, 2, 4, 8, or full page
Auto Precharge and Auto Refresh Modes
Self Refresh Mode
512 MB: 64ms, 4,096-cycle refresh; 1GB: 64ms,
8,192 cycle refresh
LVTTL-compatible inputs and outputs
Serial presence-detect (SPD)
Minimum case airflow of 1 meter/second recom-
mended
OPTIONS
MARKING
Package
168-pin DIMM (gold)
G
Frequency/CAS Latency*
133 MHz/CL = 2
-13E
133 MHz/CL = 3
-133
100 MHz/CL = 2
-10E
*An extra clock cycle will be incurred when the module is in registered
mode.
PART NUMBERS
PART NUMBER
CONFIGURATION SYSTEM BUS SPEED
MT36LSDF6472G-13E__
64 Meg x 72
133 MHz
MT36LSDF6472G-133__
64 Meg x 72
133 MHz
MT36LSDF6472G-10E__
64 Meg x 72
100 MHz
MT36LSDF12872G-13E__
128 Meg x 72
133 MHz
MT36LSDF12872G-133__
128 Meg x 72
133 MHz
MT36LSDF12872G-10E__
128 Meg x 72
100 MHz
NOTE:
The designators for component and PCB revision are
the last two characters of each part number. Consult
factory for current revision codes. Example:
MT36LSDF6472G-133B1
DEVICE TIMING
Module
PC100
PC133
Markings
CL -
t
RCD -
t
RP
CL -
t
RCD -
t
RP
-13E
2 - 2 - 2
2 - 2 - 2
-133
2 - 2 - 2
3 - 3 - 3
-10E
2 - 2 - 2
NA
ADDRESS TABLE
512MB Module
1GB Module
Refresh Count
4K
8K
Device Banks
4 (BA0, BA1)
4 (BA0, BA1)
Device Configuration
32 Meg x 4
64 Meg x 4
Row Addressing
4K (A0A11)
8K (A0A12)
Column Addressing
2K (A0A9,A11)
2K (A0A9,A11)
Module Banks
2 (S0,S2; S1,S3)
2 (S0,S2; S1,S3)
168-Pin DIMM
2
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
*Pin 126 is NC for 512MB module, or A12 for 1GB module
PIN ASSIGNMENT (168-PIN DIMM FRONT)
PIN ASSIGNMENT (168-Pin DIMM BACK)
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
1
V
SS
22
CB1
43
V
SS
64
V
SS
2
DQ0
23
V
SS
44
NC
65
DQ21
3
DQ1
24
NC
45
S2#
66
DQ22
4
DQ2
25
NC
46
DQMB2
67
DQ23
5
DQ3
26
V
DD
47
DQMB3
68
V
SS
6
V
DD
27
WE#
48
NC
69
DQ24
7
DQ4
28
DQMB0
49
V
DD
70
DQ25
8
DQ5
29
DQMB1
50
NC
71
DQ26
9
DQ6
30
S0#
51
NC
72
DQ27
10
DQ7
31
NC
52
CB2
73
V
DD
11
DQ8
32
V
SS
53
CB3
74
DQ28
12
V
SS
33
A0
54
V
SS
75
DQ29
13
DQ9
34
A2
55
DQ16
76
DQ30
14
DQ10
35
A4
56
DQ17
77
DQ31
15
DQ11
36
A6
57
DQ18
78
V
SS
16
DQ12
37
A8
58
DQ19
79
CK2
17
DQ13
38
A10
59
V
DD
80
NC
18
V
DD
39
BA1
60
DQ20
81
WP
19
DQ14
40
V
DD
61
NC
82
SDA
20
DQ15
41
V
DD
62
NC
83
SCL
21
CB0
42
CK0
63
NC
84
V
DD
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
85
V
SS
106
CB5
127
V
SS
148
V
SS
86
DQ32
107
V
SS
128
CKE0
149
DQ53
87
DQ33
108
NC
129
S3#
150
DQ54
88
DQ34
109
NC
130
DQMB6
151
DQ55
89
DQ35
110
V
DD
131
DQMB7
152
V
SS
90
V
DD
111
CAS#
132
NC
153
DQ56
91
DQ36
112
DQMB4
133
V
DD
154
DQ57
92
DQ37
113
DQMB5
134
NC
155
DQ58
93
DQ38
114
S1#
135
NC
156
DQ59
94
DQ39
115
RAS#
136
CB6
157
V
DD
95
DQ40
116
V
SS
137
CB7
158
DQ60
96
V
SS
117
A1
138
V
SS
159
DQ61
97
DQ41
118
A3
139
DQ48
160
DQ62
98
DQ42
119
A5
140
DQ49
161
DQ63
99
DQ43
120
A7
141
DQ50
162
V
SS
100
DQ44
121
A9
142
DQ51
163
CK3
101
DQ45
122
BA0
143
V
DD
164
NC
102
V
DD
123
A11
144
DQ52
165
SA0
103
DQ46
124
V
DD
145
NC
166
SA1
104
DQ47
125
CK1
146
NC
167
SA2
105
CB4
126
NC/
A12
147
REGE
168
V
DD
Front View
Back View
PIN 1
PIN 40
PIN 84
PIN 168
PIN 124
PIN 85
U28
U27
U26
U25
U24
U23
U22
U21
U20
U19
U29
U30
U31
U32
U40
U33
U34
U35
U36
U1
U2
U3
U4
U5
U6
U7
U8
U9
U10
U11
U12
U13
U14
U39
U37
U38
U15
U16
U17
U18
U42
3
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
SDRAM modules offer substantial advances in DRAM
operating performance, including the ability to synchro-
nously burst data at a high data rate with automatic
column-address generation, the ability to interleave be-
tween device banks in order to hide precharge time, and
the capability to randomly change column addresses on
each clock cycle during a burst access. For more informa-
tion regarding SDRAM operation, refer to the 128Mb
and 256Mb SDRAM data sheets.
PLL AND REGISTER OPERATION
These modules can be operated in either registered
mode (REGE pin HIGH), where the control/address in-
put signals are latched in the register on one rising clock
edge and sent to the SDRAM devices on the following
rising clock edge (data access is delayed by one clock), or
in buffered mode (REGE pin LOW) where the input sig-
nals pass through the register/buffer to the SDRAM de-
vices on the same clock.
A phase-lock loop (PLL) on the modules is used to
redrive the clock to the SDRAM devices to minimize sys-
tem clock loading. (CK0 is connected to the PLL, and
CK1, CK2, and CK3 are terminated.)
SERIAL PRESENCE-DETECT OPERATION
These modules incorporate serial presence-detect
(SPD). The SPD function is implemented using a 2,048-
bit EEPROM. This nonvolatile storage device contains
256 bytes. The first 128 bytes can be programmed by
Micron to identify the module type and various SDRAM
organizations and timing parameters. The remaining
128 bytes of storage are available for use by the cus-
tomer. System READ/WRITE operations between the
master (system logic) and the slave EEPROM device
(DIMM) occur via a standard IIC bus using the DIMM's
SCL (clock) and SDA (data) signals, together with SA(2:0),
which provide eight unique DIMM/EEPROM addresses.
GENERAL DESCRIPTION
The MT36LSDF6472G and MT36LSDF12872G are
high-speed CMOS, dynamic random-access, 512MB and
1GB memory modules organized in x72 (ECC) configu-
rations. These modules use internally configured quad-
bank SDRAMs with a synchronous interface (all signals
are registered on the positive edge of clock signal CK0).
Read and write accesses to the SDRAM modules are
burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence. Accesses begin with the regis-
tration of an ACTIVE command, which is then followed
by a READ or WRITE command. The address bits regis-
tered coincident with the ACTIVE command are used to
select the device bank and row to be accessed (BA0, BA1
select the device bank; A0-A11 for 512MB/A0-A12 for
1GB, select the device row). The address bits registered
coincident with the READ or WRITE command are used
to select the starting column location for the burst ac-
cess.
These modules provide for programmable READ or
WRITE burst lengths of 1, 2, 4, or 8 locations, or full page,
with a burst terminate option. An auto precharge func-
tion may be enabled to provide a self-timed row
precharge that is initiated at the end of the burst se-
quence.
These modules use an internal pipelined architec-
ture to achieve high-speed operation. This architecture
is compatible with the 2n rule of prefetch architectures,
but it also allows the column address to be changed on
every clock cycle to achieve a high-speed, fully random
access. Precharging one device bank while accessing
one of the other three device banks will hide the
PRECHARGE cycles and provide seamless, high-speed,
random-access operation.
These modules are designed to operate in 3.3V, low-
power memory systems. An auto refresh mode is pro-
vided, along with a power-saving, power-down mode.
All inputs and outputs are LVTTL-compatible.
4
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
FUNCTIONAL BLOCK DIAGRAM
512MB and 1GB Modules
NOTE:
1. All resistor values are 10 ohms unless otherwise specified.
A0
SA0
SPD
SCL
SDA
A1
SA1
A2
SA2
RS1#
V
DD
V
SS
SDRAMs U0-U35
SDRAMs U0-U35
12pF
CK1-CK3
PLL
SDRAM x 4
SDRAM x 4
SDRAM x 4
SDRAM x 4
SDRAM x 4
SDRAM x 4
SDRAM x 4
SDRAM x 4
SDRAM x 4
REGISTER x 3
CK0
12pF
DQM CS#
U11
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
RDQMB0
DQM CS#
U29
DQ0
DQ1
DQ2
DQ3
DQM CS#
U12
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM CS#
U30
DQ0
DQ1
DQ2
DQ3
DQM CS#
U13
DQ0
DQ1
DQ2
DQ3
DQ8
DQ9
DQ10
DQ11
RDQMB1
DQM CS#
U31
DQ0
DQ1
DQ2
DQ3
DQM CS#
U5
DQ0
DQ1
DQ2
DQ3
CB0
CB1
CB2
CB3
DQM CS#
U23
DQ0
DQ1
DQ2
DQ3
RS3#
RDQMB6
DQM CS#
U15
DQ0
DQ1
DQ2
DQ3
DQ16
DQ17
DQ18
DQ19
RDQMB2
DQM CS#
U7
DQ0
DQ1
DQ2
DQ3
DQ48
DQ49
DQ50
DQ51
DQM CS#
U16
DQ0
DQ1
DQ2
DQ3
DQ20
DQ21
DQ22
DQ23
DQM CS#
U8
DQ0
DQ1
DQ2
DQ3
DQ52
DQ53
DQ54
DQ55
RDQMB7
DQM CS#
U17
DQ0
DQ1
DQ2
DQ3
DQ24
DQ25
DQ26
DQ27
RDQMB3
DQM CS#
U9
DQ0
DQ1
DQ2
DQ3
DQ56
DQ57
DQ58
DQ59
DQM CS#
U18
DQ0
DQ1
DQ2
DQ3
DQ28
DQ29
DQ30
DQ31
DQM CS#
U10
DQ0
DQ1
DQ2
DQ3
DQ60
DQ61
DQ62
DQ63
RAS#
CAS#
WE#
CKE0
RRAS#: SDRAMs U1-U36
RCAS#: SDRAMs U1-U36
RWE#: SDRAMs U1-U36
RCKE: SDRAMs U1-U36
RA0-RA12: SDRAMs U1-U36
RA0-RA12: SDRAMs U1-U36
RBA0: SDRAMs U1-U36
RBA1: SDRAMs U1-U36
RS0#-RS3#
RDQMB0 - RDQMB7
A0-A11 (512MB)
A0-A12 (1GB)
BA0
BA1
S0#-S3#
DQMB0 - DQMB7
PLL CLK
V
DD
REGE
10K
WP
DQM CS#
U14
DQ0
DQ1
DQ2
DQ3
DQ12
DQ13
DQ14
DQ15
DQM CS#
U32
DQ0
DQ1
DQ2
DQ3
DQM CS#
U1
DQ0
DQ1
DQ2
DQ3
DQ32
DQ33
DQ34
DQ35
RDQMB4
DQM CS#
U19
DQ0
DQ1
DQ2
DQ3
DQM CS#
U2
DQ0
DQ1
DQ2
DQ3
DQ36
DQ37
DQ38
DQ39
DQM CS#
U20
DQ0
DQ1
DQ2
DQ3
DQM CS#
U3
DQ0
DQ1
DQ2
DQ3
DQ40
DQ41
DQ42
DQ43
RDQMB5
DQM CS#
U21
DQ0
DQ1
DQ2
DQ3
DQM
U6
DQ0
DQ1
DQ2
DQ3
CB4
CB5
CB6
CB7
DQM
U24
DQ0
DQ1
DQ2
DQ3
DQM CS#
U4
DQ0
DQ1
DQ2
DQ3
DQ44
DQ45
DQ46
DQ47
DQM CS#
U22
DQ0
DQ1
DQ2
DQ3
RS0#
DQM CS#
U33
DQ0
DQ1
DQ2
DQ3
DQM CS#
U34
DQ0
DQ1
DQ2
DQ3
DQM CS#
U35
DQ0
DQ1
DQ2
DQ3
DQM CS#
U36
DQ0
DQ1
DQ2
DQ3
DQM CS#
U25
DQ0
DQ1
DQ2
DQ3
DQM CS#
U26
DQ0
DQ1
DQ2
DQ3
DQM CS#
U27
DQ0
DQ1
DQ2
DQ3
DQM CS#
U28
DQ0
DQ1
DQ2
DQ3
RS2#
R
E
G
I
S
T
E
R
S
U39
U41
U42
U37, U38, U40
CS#
CS#
U1-U36 = MT48LC64M4A2FB SDRAMs (1GB)
U1-U36 = MT48LC32M4A2FB SDRAMs (512MB)
5
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
PIN DESCRIPTIONS
PIN NUMBERS
SYMBOL
TYPE
DESCRIPTION
27, 111, 115
RAS#, CAS#,
Input
Command Inputs: RAS#, CAS#, and WE# (along with
WE#
S0#-S3#) define the command being entered.
42, 79, 125, 163
CK0-CK3
Input
Clock: CK0 is distributed through an on-board PLL to
all devices. CK1-CK3 are terminated.
128, 63
CKE0,CKE1
Input
Clock Enable: CKE0 activates (HIGH) and deactivates
(LOW) the CK0 signal. Deactivating the clock provides
POWER-DOWN and SELF REFRESH operation (all
device banks idle) or CLOCK SUSPEND operation
(burst access in progress). CKE0 is synchronous except
after the device enters power-down and self refresh
modes, where CKE0 becomes asynchronous until after
exiting the same mode. The input buffers, including
CK0, are disabled during power-down and self refresh
modes, providing low standby power.
30, 45, 114, 129
S0#-S3#
Input
Chip Select: S0#-S3# enable (registered LOW) and disable
(registered HIGH) the command decoder. All commands
are masked when S0#-S3# are registered HIGH. S0#-S3# are
considered part of the command code.
28, 29, 46, 47, 112, 113,
DQMB0-DQMB7
Input
Input/Output Mask: DQMB is an input mask signal for
130, 131
write accesses and an output enable signal for read
accesses. Input data is masked when DQMB is sampled
HIGH during a WRITE cycle. The output buffers are
placed in a High-Z state (two-clock latency) when
DQMB is sampled HIGH during a READ cycle.
39, 122
BA0, BA1
Input
Bank Address: BA0 and BA1 define to which device
bank the ACTIVE, READ, WRITE, or PRECHARGE
command is being applied.
33-38, 117-121, 123, 126 A0-A11
(512MB)
Input
Address Inputs: A0-A11/A12 are sampled during the
A0-A12
(1GB)
ACTIVE command (row-address A0-A11/A12) and
READ/WRITE command (column-address A0-A9, A11,
with A10 defining auto precharge) to select one
location out of the memory array in the respective
device bank. A10 is sampled during a PRECHARGE
command to determine if both device banks are to be
precharged (A10 HIGH). The address inputs also
provide the op-code during a LOAD MODE REGISTER
command.
81
WP
Input
Write Protect: Serial presence-detect hardware write
protect.
83
SCL
Input
Serial Clock for Presence-Detect: SCL is used to
synchronize the presence-detect data transfer to and
from the module.
165-167
SA0-SA2
Input
Presence-Detect Address Inputs: These pins are used to
configure the presence-detect device.
147
REGE
Input
Register Enable: REGE permits the DIMM to operate in
"buffered" mode (LOW) or "registered' mode (HIGH).
NOTE: Pin numbers are listed in module pinout order and do not necessarily correlate with symbols.
6
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
PIN DESCRIPTIONS (continued)
PIN NUMBERS
SYMBOL
TYPE
DESCRIPTION
2-5, 7-11, 13-17, 19-20,
DQ0-DQ63
Input/
Data I/Os: Data bus.**
55-58, 60, 65-67, 69-72,
Output
74-77, 86-89, 91-95,
97-101, 103-104,
139-142, 144, 149-151,
153-156, 158-161
21, 22, 52, 53, 105, 106,
CB0-CB7
Input/
Check Bits.
136, 137
Output
82
SDA
Input/
Serial Presence-Detect Data: SDA is a bidirectional pin
Output
used to transfer addresses and data into and data out
of the presence-detect portion of the module.
6, 18, 26, 40, 41, 49, 59,
V
DD
Supply
Power Supply: +3.3V 0.3V.
73, 84, 90, 102, 110, 124,
133, 143, 157, 168
1, 12, 23, 32, 43, 54, 64,
V
SS
Supply
Ground.
68, 78, 85, 96, 107, 116,
127, 138, 148, 152, 162
24, 25, 31, 44, 48 50, 51
NC
Not Connected: Listed pins are not connected on
61-63, 80, 108, 109, 132,
these modules.
134, 135, 145, 146, 164
NOTE: Pin numbers are listed in module pinout order and do not necessarily correlate with symbols.
7
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
SDRAM FUNCTIONAL DESCRIPTION
In general, the 128Mb and 256Mb SDRAM memory
devices used for these modules are quad-bank
DRAMs, that operate at 3.3V and include a synchro-
nous interface (all signals are registered on the positive
edge of the clock signal, CLK). The four banks of a x4,
128Mb device are each configured as 4,096 bit-rows, by
2,048 bit-columns, by 4 input/output bits. The four
banks of a x4, 256Mb device are configured as 8,192 bit-
rows by 2,048 bit columns, by 4 input/output bits.
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and con-
tinue for a programmed number of locations in a pro-
grammed sequence. Accesses begin with the registra-
tion of an ACTIVE command, which is then followed by
a READ or WRITE command. The address bits regis-
tered coincident with the ACTIVE command are used
to select the device bank and row to be accessed BA0
and BA1 select the device bank, A0-A11 (for 128Mb), or
A0-A12 (for 256Mb), select the device row. The address
bits A0-A9,A11, registered coincident with the READ or
WRITE command are used to select the starting device
column location for the burst access.
Prior to normal operation, the SDRAM must be ini-
tialized. The following sections provide detailed infor-
mation covering device initialization, register defini-
tion, command descriptions and device operation.
Initialization
SDRAMs must be powered up and initialized in a
predefined manner. Operational procedures other
than those specified may result in undefined opera-
tion. Once power is applied to V
DD
and V
DD
Q (simulta-
neously) and the clock is stable (stable clock is defined
as a signal cycling within timing constraints specified
for the clock pin), the SDRAM requires a 100s delay
prior to issuing any command other than a COMMAND
INHIBIT or NOP. Starting at some point during this
100s period and continuing at least through the end
of this period, COMMAND INHIBIT or NOP commands
should be applied.
Once the 100s delay has been satisfied with at
least one COMMAND INHIBIT or NOP command hav-
ing been applied, a PRECHARGE command should be
applied. All device banks must then be precharged,
thereby placing the device in the all device banks idle
state.
Once in the idle state, two auto refresh cycles must
be performed. After the auto refresh cycles are com-
plete, the SDRAM is ready for mode register program-
ming. Because the mode register will power up in an
unknown state, it should be loaded prior to applying
any operational command.
Mode Register Definition
MODE REGISTER
The mode register is used to define the specific mode
of operation of the SDRAM. This definition includes
the selection of a burst length, a burst type, a CAS
latency, an operating mode and a write burst mode, as
shown in Mode Register Definition Diagram. The mode
register is programmed via the LOAD MODE REGIS-
TER command and will retain the stored information
until it is programmed again or the device loses power.
Mode register bits M0-M2 specify the burst length,
M3 specifies the type of burst (sequential or inter-
leaved), M4-M6 specify the CAS latency, M7 and M8
specify the operating mode, M9 specifies the write burst
mode, and M10 and M11 are reserved for future use.
Address A12 (M12) is undefined but should be driven
LOW during loading of the mode register.
The mode register must be loaded when all device
banks are idle, and the controller must wait the speci-
fied time before initiating the subsequent operation.
Violating either of these requirements will result in
unspecified operation.
Burst Length
Read and write accesses to the SDRAM are burst
oriented, with the burst length being programmable,
as shown in Mode Register Definition Diagram. The
burst length determines the maximum number of col-
umn locations that can be accessed for a given READ or
WRITE command. Burst lengths of 1, 2, 4, or 8 locations
are available for both the sequential and the inter-
leaved burst types, and a full-page burst is available
for the sequential type. The full-page burst is used in
conjunction with the BURST TERMINATE command to
generate arbitrary burst lengths.
Reserved states should not be used, as unknown
operation or incompatibility with future versions may
result.
When a READ or WRITE command is issued, a block
of columns equal to the burst length is effectively se-
lected. All accesses for that burst take place within this
block, meaning that the burst will wrap within the block
if a boundary is reached, as shown in the Burst Defini-
tion Table The block is uniquely selected by A1-A9,
A11 when the burst length is set to two; A2-A9, A11
when the burst length is set to four; and by A3-A9, A11
when the burst length is set to eight. The remaining
(least significant) address bit(s) is (are) used to select
the starting location within the block. Full-page bursts
wrap within the page if the boundary is reached, as
shown in the Burst Definition Table.
8
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
NOTE: 1. For full-page accesses: y = 2,048
2. For a burst length of two, A1-A9, A11 select the
block of two burst; A0 selects the starting column
within the block.
3. For a burst length of four, A2-A9, A11 select the
block of four burst; A0-A1 select the starting
column within the block.
4. For a burst length of eight, A3-A9, A11 select the
block of eight burst; A0-A2 select the starting
column within the block.
5. For a full-page burst, the full row is selected and
A0-A9, A11 select the starting column.
6. Whenever a boundary of the block is reached
within a given sequence above, the following
access wraps within the block.
7. For a burst length of one, A0-A9, A11 select the
unique column to be accessed, and Mode Register
bit M3 is ignored.
Burst Definition Table
Burst
Starting Column
Order of Accesses Within a Burst
Length
Address
Type = Sequential Type = Interleaved
A0
2
0
0-1
0-1
1
1-0
1-0
A1 A0
0
0
0-1-2-3
0-1-2-3
4
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
2-3-0-1
1
1
3-0-1-2
3-2-1-0
A2 A1 A0
0
0
0
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
8
0
1
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
0
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
Full
n = A0-A9, A11
Cn, Cn+1, Cn+2
Page
(location 0-y)
Cn+3, Cn+4...
Not supported
(y)
...Cn-1,
Cn...
Mode Register Definition Diagram
Burst Type
Accesses within a given burst may be programmed
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
The ordering of accesses within a burst is deter-
mined by the burst length, the burst type and the start-
ing column address, as shown in the Burst Definition
Table.
M3 = 0
1
2
4
8
Reserved
Reserved
Reserved
Full Page
M3 = 1
1
2
4
8
Reserved
Reserved
Reserved
Reserved
Operating Mode
Standard Operation
All other states reserved
0
-
0
-
Defined
-
0
1
Burst Type
Sequential
Interleaved
CAS Latency
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
Burst Length
1GB Module
512MB Module
M0
0
1
0
1
0
1
0
1
Burst Length
CAS Latency
BT
A9
A7
A6
A5
A4
A3
A8
A2
A1
A0
Mode Register (Mx)
Address Bus
9
7
6
5
4
3
8
2
1
0
M1
0
0
1
1
0
0
1
1
M2
0
0
0
0
1
1
1
1
M3
M4
0
1
0
1
0
1
0
1
M5
0
0
1
1
0
0
1
1
M6
0
0
0
0
1
1
1
1
M6-M0
M8
M7
Op Mode
A10
A11
10
11
Reserved*
WB
0
1
Write Burst Mode
Programmed Burst Length
Single Location Access
M9
*Should program
M12, M11, M10 = "0, 0, 0"
to ensure compatibility
with future devices.
*Should program
M11 and M10 = "0, 0, 0"
to ensure compatibility
with future devices.
A12
12
Burst Length
CAS Latency
BT
A9
A7
A6
A5
A4
A3
A8
A2
A1
A0
Mode Register (Mx)
Address Bus
9
7
6
5
4
3
8
2
1
0
Op Mode
A10
A11
10
11
Reserved* WB
9
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
Operating Mode
The normal operating mode is selected by setting
M7 and M8 to zero; the other combinations of values for
M7 and M8 are reserved for future use and/or test
modes. The programmed burst length applies to both
READ and WRITE bursts.
Test modes and reserved states should not be used
because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
When M9 = 0, the burst length programmed via
M0-M2 applies to both READ and WRITE bursts; when
M9 = 1, the programmed burst length applies to
READ bursts, but write accesses are single-location
(nonburst) accesses.
CAS Latency
The CAS latency is the delay, in clock cycles, be-
tween the registration of a READ command and the
availability of the first piece of output data. The la-
tency can be set to two or three clocks.
If a READ command is registered at clock edge n,
and the latency is m clocks, the data will be available by
clock edge n + m. The DQs will start driving as a result of
the clock edge one cycle earlier (n + m - 1), and provided
that the relevant access times are met, the data will be
valid by clock edge n + m. For example, assuming that
the clock cycle time is such that all relevant access times
are met, if a READ command is registered at T0 and the
latency is programmed to two clocks, the DQs will start
driving after T1 and the data will be valid by T2, as
shown in the CAS Latency Diagram. The CAS Latency
Table indicate the operating frequencies at which each
CAS latency setting can be used.
Reserved states should not be used as unknown
operation or incompatibility with future versions
may result.
CAS Latency Diagram
CLK
DQ
T2
T1
T3
T0
CAS Latency = 3
LZ
D
OUT
tOH
t
COMMAND
NOP
READ
tAC
NOP
T4
NOP
DON'T CARE
UNDEFINED
CLK
DQ
T2
T1
T3
T0
CAS Latency = 2
LZ
D
OUT
tOH
t
COMMAND
NOP
READ
tAC
NOP
CAS Latency Table
ALLOWABLE OPERATING
FREQUENCY (MHz)
CAS
CAS
SPEED
LATENCY = 2*
LATENCY = 3*
-13E
133
143
-133
100
133
-10E
100
N/A
*Input register will add one extra clock in registered mode.
10
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
NOTE: 1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A0-A11 (512MB), A0-A12 (1GB) define the op-code written to the Mode Register, and should be driven low.
3. A0-A11 (512MB), A0-A12 (1GB) provide device row address. BA0, BA1 determine which device bank is made active.
4. A0-A9, A11 provide device column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10
LOW disables the auto precharge feature; BA0, BA1 determine which device bank is being read from or written to.
5. A10 LOW: BA0, BA1 determine which device bank is being precharged. A10 HIGH: both device banks are precharged and
BA0, BA1 are "Don't Care."
6. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are "Don't Care" except for CKE.
8. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay).
TRUTH TABLE SDRAM Commands and DQMB Operation
(Note: 1, notes appear below table)
NAME (FUNCTION)
C S # R A S #C A S # W E # D Q M B A D D R
D Q s N O T E S
COMMAND INHIBIT (NOP)
H
X
X
X
X
X
X
NO OPERATION (NOP)
L
H
H
H
X
X
X
ACTIVE (Select bank and activate row)
L
L
H
H
X
Bank/Row
X
3
READ (Select bank and column, and start READ burst)
L
H
L
H
L/H
8
Bank/Col
X
4
WRITE (Select bank and column, and start WRITE burst)
L
H
L
L
L/H
8
Bank/Col Valid
4
BURST TERMINATE
L
H
H
L
X
X
Active
PRECHARGE (Deactivate row in bank or banks)
L
L
H
L
X
Code
X
5
AUTO REFRESH or
L
L
L
H
X
X
X
6, 7
SELF REFRESH (Enter self refresh mode)
LOAD MODE REGISTER
L
L
L
L
X
Op-Code
X
2
Write Enable/Output Enable
L
Active
8
Write Inhibit/Output High-Z
H
High-Z
8
Commands
The Truth Table provides a quick reference of avail-
able commands. This is followed by a written descrip-
tion of each command. For a more detailed description
of commands and operations refer to the 128Mb or
256Mb SDRAM datasheets.
11
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
........................................... -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to V
SS
........................................... -1V to +4.6V
Operating Temperature, T
A
(ambient) ... 0C to +70C
Storage Temperature (plastic) ............ -55C to +150C
Power Dissipation ...................................................... 36W
*Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear following parameter tables); (V
DD
, V
DD
Q = +3.3V 0.3V)
P A R A M E T E R / C O N D I T I O N
S Y M B O L
M I N
M A X
U N I T S N O T E S
SUPPLY VOLTAGE
V
DD
, V
DD
Q
3
3.6
V
INPUT HIGH VOLTAGE: Logic 1; All inputs
V
IH
2
V
DD
+ 0.3
V
22
INPUT LOW VOLTAGE: Logic 0; All inputs
V
IL
-0.3
0.8
V
22
INPUT LEAKAGE CURRENT: Any input 0V
V
IN
V
DD
(All other pins not under test = 0V) For inputs: A0-A11, A12,
I
I
-10
10
A
33
BA0, BA1, RAS#, CAS#, and WE#
INPUT LEAKAGE CURRENT: Any input 0V
V
IN
V
DD
(All other pins not under test = 0V) For inputs: S0#-S3#,
I
I
-5
5
A
33
DQMB1-DQMB7
INPUT LEAKAGE CURRENT: Any input 0V
V
IN
V
DD
I
I
-20
20
A
33
(All other pins not under test = 0V) For inputs: CKE0
OUTPUT LEAKAGE CURRENT: DQs are disabled;
I
OZ
-10
10
A
33
0V
V
OUT
V
DD
Q
OUTPUT LEVELS:
V
OH
2.4
V
Output High Voltage (I
OUT
= -4mA)
Output Low Voltage (I
OUT
= 4mA)
V
OL
0.4
V
12
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
I
DD
SPECIFICATIONS AND CONDITIONS* ( 512MB MODULE)
(Notes: 1, 6, 11, 13; notes appear following parameter tables)
(V
DD
, V
DD
Q = +3.3V 0.3V)
P A R A M E T E R / C O N D I T I O N
SYMBOL - 1 3 E
- 1 3 3
- 1 0 E UNITS NOTES
OPERATING CURRENT: Active Mode;
I
DD
1
a
2,916 2,736 2,556
mA
3, 18,
Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
19, 30
STANDBY CURRENT: Power-Down Mode;
I
DD
2
b
72
72
72
mA
30
All device banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;
I
DD
3
a
936
936
756
mA
3, 12,
CKE = HIGH; CS# = HIGH; All device banks active after
t
RCD met;
19, 30
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
I
DD
4
a
3,006 2,736 2,556
mA
3, 18,
READ or WRITE; All device banks active
19, 30
AUTO REFRESH CURRENT
t
RFC =
t
RFC (MIN)
I
DD
5
b
11,880 11,160 9,720
mA
3, 12,
CS# = HIGH; CKE = HIGH
t
RFC = 15.6 s
I
DD
6
b
108
108
108
mA
18, 19,
30, 31
SELF REFRESH CURRENT: CKE
0.2V
I
DD
7
b
72
72
72
mA
4
MAX
I
DD
SPECIFICATIONS AND CONDITIONS* (1GB MODULE)
(Notes: 1, 6, 11, 13; notes appear following parameter tables)
(V
DD
, V
DD
Q = +3.3V 0.3V)
P A R A M E T E R / C O N D I T I O N
SYMBOL - 1 3 E
- 1 3 3
- 1 0 E UNITS NOTES
OPERATING CURRENT: Active Mode;
I
DD
1
a
2,466
2,286 2,286
mA
3, 18,
Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
19, 30
STANDBY CURRENT: Power-Down Mode;
I
DD
2
b
72
72
72
mA
30
All device banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;
I
DD
3
a
756
756
1,026
mA
3, 12,
CKE = HIGH; CS# = HIGH; All device banks active after
t
RCD met;
19, 30
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
I
DD
4
a
2,466
2,466 2,736
mA
3, 18,
READ or WRITE; All device banks active
19, 30
AUTO REFRESH CURRENT
t
RFC =
t
RFC (MIN)
I
DD
5
b
10,260 9,720 10,800
mA
3, 12,
CS# = HIGH; CKE = HIGH
t
RFC = 7.81 s
I
DD
6
b
126
126
144
mA
18, 19,
30, 31
SELF REFRESH CURRENT: CKE
0.2V
I
DD
7
b
90
90
108
mA
4
*DRAM components only.
a - Value calculated as one module bank in this operating condition, and all other module banks in power-down mode.
b - Value calculated reflects all module banks in this operating condition.
MAX
13
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
CAPACITANCE (512MB, 1GB)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Input Capacitance: A0-A12, BA0, BA1, RAS#, CAS#, WE#
C
I
1
8
p F
Input Capacitance: CKE0, CKE1
C
I
2
16
p F
Input Capacitance: CK1-CK3
C
I
3
12
p F
Input Capacitance: S0#-S3#, DQMB0-DQMB7, CK0
C
I
4
4
p F
Input Capacitance: REGE
C
I
5
-
1.5
12
p F
Input Capacitance: SCL, SA0-SA2
C
I
6
10
p F
Input/Output Capacitance: DQ0-DQ63, CB0-CB7, SDA
C
IO
6
12
p F
NOTE: This parameter is sampled. V
DD
, V
DD
Q = +3.3V; f = 1 MHz, T
A
= 25C; pin under test biased at 1.4V.
14
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
*Module AC timing parameters comply with PC133 Design Specs, based on component parameters.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS*
(Notes: 5, 6, 8, 9, 11; notes appear following parameter tables)
AC CHARACTERISTICS
-13E
-133
-10E
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
Access time from
CL = 3
t
AC(3)
5.4
5.4
6
ns
27
CLK (pos. edge)
CL = 2
t
AC(2)
5.4
6
6
ns
Address hold time
t
AH
0.8
0.8
1
ns
Address setup time
t
AS
1.5
1.5
2
ns
CLK high-level width
t
CH
2.5
2.5
3
ns
CLK low-level width
t
CL
2.5
2.5
3
ns
Clock cycle time
CL = 3
t
CK(3)
7
7.5
8
ns
23
CL = 2
t
CK(2)
7.5
10
10
ns
23
CKE hold time
t
CKH
0.8
0.8
1
ns
CKE setup time
t
CKS
1.5
1.5
2
ns
CS#, RAS#, CAS#, WE#, DQM hold time
t
CMH
0.8
0.8
1
ns
CS#, RAS#, CAS#, WE#, DQM setup time
t
CMS
1.5
1.5
2
ns
Data-in hold time
t
DH
0.8
0.8
1
ns
Data-in setup time
t
DS
1.5
1.5
2
ns
Data-out high-impedance
CL = 3
t
HZ(3)
5.4
5.4
6
ns
10
time
CL = 2
t
HZ(2)
5.4
6
6
ns
10
Data-out low-impedance time
t
LZ
1
1
1
ns
Data-out hold time (load)
t
OH
3
3
3
ns
Data-out hold time (no load)
t
OH
N
1.8
1.8
1.8
ns
28
ACTIVE to PRECHARGE command
t
RAS
37
120,000
44
120,000
50
120,000
ns
29
ACTIVE to ACTIVE command period
t
RC
60
66
70
ns
ACTIVE to READ or WRITE delay
t
RCD
15
20
20
ns
Refresh period
t
REF
64
64
64
ms
AUTO REFRESH period
t
RFC
66
66
70
ns
PRECHARGE command period
t
RP
15
20
20
ns
ACTIVE bank a to ACTIVE bank b command
t
RRD
14
15
20
ns
Transition time
t
T
0.3
1.2
0.3
1.2
0.3
1.2
ns
7
WRITE recovery time
t
WR
1 CLK +
1 CLK +
1 CLK +
ns
24
7ns
7.5ns
7ns
14
15
15
ns
25
Exit SELF REFRESH to ACTIVE command
t
XSR
67
75
80
ns
20
15
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11; notes appear following parameter tables)
PARAMETER
SYMBOL -13E
-133
-10E
UNITS NOTES
READ/WRITE command to READ/WRITE command
t
CCD
1
1
1
t
CK
17
CKE to clock disable or power-down entry mode
t
CKED
1
1
1
t
CK
14, 32
CKE to clock enable or power-down exit setup mode
t
PED
1
1
1
t
CK
14, 32
DQM to input data delay
t
DQD
0
0
0
t
CK
17,
32
DQM to data mask during WRITEs
t
DQM
0
0
0
t
CK
17, 32
DQM to data high-impedance during READs
t
DQZ
2
2
2
t
CK
17, 32
WRITE command to input data delay
t
DWD
0
0
0
t
CK
17, 32
Data-in to ACTIVE command
t
DAL
4
5
4
t
CK
15, 21,
32
Data-in to PRECHARGE command
t
DPL
2
2
2
t
CK
16, 21,
32
Last data-in to burst STOP command
t
BDL
1
1
1
t
CK
17, 32
Last data-in to new READ/WRITE command
t
CDL
1
1
1
t
CK
17, 32
Last data-in to PRECHARGE command
t
RDL
2
2
2
t
CK
16, 21,
32
LOAD MODE REGISTER command to ACTIVE or REFRESH command
t
MRD
2
2
2
t
CK
26
Data-out to high-impedance from PRECHARGE command
CL = 3
t
ROH(3)
3
3
3
t
CK
17, 32
CL = 2
t
ROH(2)
2
2
2
t
CK
17, 32
16
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
15. Timing actually specified by
t
WR plus
t
RP; clock(s)
specified as a reference only at minimum cycle rate.
16. Timing actually specified by
t
WR.
17. Required clocks are specified by JEDEC function-
ality and are not dependent on any timing param-
eter.
18. The I
DD
current will increase or decrease propor-
tionally according to the amount of frequency al-
teration for the test condition.
19. Address transitions average one transition every
two clocks.
20. CLK must be toggled a minimum of two times dur-
ing this period.
21. Based on
t
CK = 10ns for -10E, and
t
CK = 7.5ns for -
133 and -13E.
22. V
IH
overshoot: V
IH
(MAX) = V
DD
Q + 2V for a pulse
width
3ns, and the pulse width cannot be greater
than one third of the cycle rate. V
IL
undershoot: V
IL
(MIN) = -2V for a pulse width
3ns.
23. The clock frequency must remain constant (stable
clock is defined as a signal cycling within timing
constraints specified for the clock pin) during ac-
cess or precharge states (READ, WRITE, including
t
WR, and PRECHARGE commands). CKE may be
used to reduce the data rate.
24. Auto precharge mode only. The precharge timing
budget (
t
RP) begins 7ns for -13E; 7.5ns for -133 and
7ns for -10E after the first clock delay, after the last
WRITE is executed. May not exceed limit set for
precharge mode.
25. Precharge mode only.
26. JEDEC and PC100 specify three clocks.
27.
t
AC for -133/-13E at CL = 3 with no load is 4.6ns and
is guaranteed by design.
28. Parameter guaranteed by design.
29. The value for
t
RAS used in -13E speed grade mod-
ules is calculated from
t
RC -
t
RP.
30. For -10E, CL= 2 and
t
CK = 10ns; for -133, CL = 3 and
t
CK = 7.5ns; for -13E, CL = 2 and
t
CK = 7.5ns.
31. CKE is HIGH during refresh command period
t
RFC (MIN) else CKE is LOW. The I
DD
6 limit is actu-
ally a nominal value and does not result in a fail
value.
32. This AC timing function will show an extra clock
cycle when in registered mode.
33. Leakage number reflects the worst case leakage
possible through the module pin, not what each
memory device contributes.
NOTES
1.
All voltages referenced to V
SS
.
2.
This parameter is sampled. V
DD
, V
DD
Q = +3.3V;
f = 1 MHz, T
A
= 25C; pin under test biased at 1.4V.
3.
I
DD
is dependent on output loading and cycle rates.
Specified values are obtained with minimum cycle
time and the outputs open.
4.
Enables on-chip refresh and address counters.
5.
The minimum specifications are used only to
indicate cycle time at which proper operation over
the full temperature range is ensured; (0C
T
A
+70C).
6.
An initial pause of 100s is required after power-
up, followed by two AUTO REFRESH commands,
before proper device operation is ensured. (V
DD
and V
DD
Q must be powered up simultaneously. V
SS
and V
SS
Q must be at same potential.) The two AUTO
REFRESH command wake-ups should be repeated
any time the
t
REF refresh requirement is exceeded.
7.
AC characteristics assume
t
T = 1ns.
8.
In addition to meeting the transition rate specifi-
cation, the clock and CKE must transit between V
IH
and V
IL
(or between V
IL
and V
IH
) in a monotonic
manner.
9.
Outputs measured at 1.5V with equivalent load:
Q
50pF
10.
t
HZ defines the time at which the output achieves
the open circuit condition; it is not a reference to
V
OH
or V
OL
. The last valid data element will meet
t
OH before going High-Z.
11. AC timing and I
DD
tests have V
IL
= 0V and V
IH
= 3V,
with timing referenced to 1.5V crossover point. If
the input transition time is longer than 1 ns, then
the timing is referenced at V
IL
(MAX) and V
IH
(MIN)
and no longer at the 1.5V crossover point. Refer to
Micron Technical Note TN-48-09.
12. Other input signals are allowed to transition no
more than once every two clocks and are otherwise
at valid V
IH
or V
IL
levels.
13. I
DD
specifications are tested after the device is prop-
erly initialized.
14. Timing actually specified by
t
CKS; clock(s) speci-
fied as a reference only at minimum cycle rate.
17
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
SCL
SDA
DATA STABLE
DATA STABLE
DATA
CHANGE
Figure 1
Data Validity
SCL
SDA
START
BIT
STOP
BIT
Figure 2
Definition of Start and Stop
SCL from Master
Data Output
from Transmitter
Data Output
from Receiver
9
8
Acknowledge
Figure 3
Acknowledge Response From Receiver
SPD CLOCK AND DATA CONVENTIONS
Data states on the SDA line can change only during
SCL LOW. SDA state changes during SCL HIGH are
reserved for indicating start and stop conditions (Fig-
ures 1 and 2).
SPD START CONDITION
All commands are preceded by the start condition,
which is a HIGH-to-LOW transition of SDA when SCL is
HIGH. The SPD device continuously monitors the SDA
and SCL lines for the start condition and will not re-
spond to any command until this condition has been
met.
SPD STOP CONDITION
All communications are terminated by a stop condi-
tion, which is a LOW-to-HIGH transition of SDA when
SCL is HIGH. The stop condition is also used to place
the SPD device into standby power mode.
SPD ACKNOWLEDGE
Acknowledge is a software convention used to indi-
cate successful data transfers. The transmitting de-
vice, either master or slave, will release the bus after
transmitting eight bits. During the ninth clock cycle,
the receiver will pull the SDA line LOW to acknowledge
that it received the eight bits of data (Figure 3).
The SPD device will always respond with an ac-
knowledge after recognition of a start condition and its
slave address. If both the device and a WRITE opera-
tion have been selected, the SPD device will respond
with an acknowledge after the receipt of each subse-
quent eight-bit word. In the read mode the SPD device
will transmit eight bits of data, release the SDA line and
monitor the line for an acknowledge. If an acknowledge
is detected and no stop condition is generated by the
master, the slave will continue to transmit data.
If an acknowledge is not detected, the slave will termi-
nate further data transmissions and await the stop con-
dition to return to standby power mode.
18
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
SCL
SDA IN
SDA OUT
tLOW
tSU:STA
tHD:STA
tF
tHIGH
tR
tBUF
tDH
tAA
tSU:STO
tSU:DAT
tHD:DAT
UNDEFINED
SPD EEPROM TIMING DIAGRAM
SYMBOL
MIN
MAX
UNITS
t
AA
0.3
3.5
s
t
BUF
4.7
s
t
DH
300
ns
t
F
300
ns
t
HD:DAT
0
s
t
HD:STA
4
s
SYMBOL
MIN
MAX
UNITS
t
HIGH
4
s
t
LOW
4.7
s
t
R
1
s
t
SU:DAT
250
ns
t
SU:STA
4.7
s
t
SU:STO
4.7
s
SERIAL PRESENCE-DETECT EEPROM TIMING PARAMETERS
EEPROM DEVICE SELECT CODE
(The most significant bit (b7) is sent first)
Device Type Identifier
Chip Enable
RW
b7
b6
b5
b4
b3
b2
b1
b0
Memory Area Select Code (two arrays)
1
0
1
0
E2
E1
E0
RW
Protection Register Select Code
0
1
1
0
E2
E1
E0
RW
EEPROM OPERATING MODES
(X = V
IH
or V
IL
)
MODE
RW Bit
WC
1
BYTES
Initial Sequence
Current Address Read
1
X
1
Start, Device Select, RW = 1
Random Address Read
0
X
1
Start, Device Select, RW = 0, Address
1
X
reSTART, Device Select, RW = 1
Sequential Read
1
X
1
Similar to Current or Random Address Read
Byte Write
0
V
IL
1
START, Device Select, RW = 0
Page Write
0
V
IL
16
START, Device Select, RW = 0
19
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
SERIAL PRESENCE-DETECT EEPROM DC OPERATING CONDITIONS
(Note: 1) (V
DD
= +3.3V 0.3V)
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
SUPPLY VOLTAGE
V
DD
3
3.6
V
INPUT HIGH VOLTAGE: Logic 1; All inputs
V
IH
V
DD
x 0.7 V
DD
+ 0.5
V
INPUT LOW VOLTAGE: Logic 0; All inputs
V
IL
-1
V
DD
x 0.3
V
OUTPUT LOW VOLTAGE: I
OUT
= 3mA
V
OL
0.4
V
INPUT LEAKAGE CURRENT: V
IN
= GND to V
DD
I
L I
10
A
OUTPUT LEAKAGE CURRENT: V
OUT
= GND to V
DD
I
LO
10
A
STANDBY CURRENT:
I
SB
30
A
SCL = SDA = V
DD
- 0.3V; All other inputs = GND or 3.3V +10%
POWER SUPPLY CURRENT:
I
DD
2
mA
SCL clock frequency = 100 KHz
SERIAL PRESENCE-DETECT EEPROM AC OPERATING CONDITIONS
(Note: 1) (V
DD
= +3.3V 0.3V)
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
SCL LOW to SDA data-out valid
t
AA
0.3
3.5
s
Time the bus must be free before a new transition can start
t
BUF
4.7
s
Data-out hold time
t
DH
300
ns
SDA and SCL fall time
t
F
300
ns
Data-in hold time
t
HD:DAT
0
s
Start condition hold time
t
HD:STA
4
s
Clock HIGH period
t
HIGH
4
s
Noise suppression time constant at SCL, SDA inputs
t
I
100
ns
Clock LOW period
t
LOW
4.7
s
SDA and SCL rise time
t
R
1
s
SCL clock frequency
t
SCL
100
KHz
Data-in setup time
t
SU:DAT
250
ns
Start condition setup time
t
SU:STA
4.7
s
Stop condition setup time
t
SU:STO
4.7
s
WRITE cycle time
t
WRC
10
ms
2
NOTE: 1. All voltages referenced to V
SS
.
2. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write sequence to the end of the
EEPROM internal erase/program cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA
remains HIGH due to pull-up resistor, and the EEPROM does not respond to its slave address.
20
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
NOTE: 1. Micron Technology, Inc. specifies a minimum air flow of 1 meter/second (~197 LFM) across the MT36LSDF6472G and
MT36LSDT12872G modules when installed in a system.
2. The component case temperature measurements shown above are obtained experimentally. The system used for
experimental purposes is a dual-processor 600 MHz work station, fully loaded with four MT36LSDF6472G modules. Case
temperatures charted represent worst-case component locations on modules installed in the internal slots of the
system.
3. Temperature versus air speed data is obtained by performing experiments with the system motherboard removed from
its case and mounted in a Eiffel-type low air speed wind tunnel. Peripheral devices installed on the system
motherboard for testing are the processor(s) and video card, all other peripheral devices are mounted outside of the
wind tunnel test chamber.
4. The memory diagnostic software used for determining worst-case component temperatures is a memory diagnostic
software application developed for internal use by Micron Technology, Inc.
COMPONENT CASE TEMPERATURE VS. AIR FLOW
20
30
40
50
60
70
80
90
100
0.0
0.5
1.0
2.0
Air Flow (meters/sec)
Degrees Celsius
Ambient Temperature = 25 C
T
max
- memory stress software
T
ave
- 3D gaming software
T
ave
- memory stress software
Minimum Air Flow
21
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
SERIAL PRESENCE-DETECT MATRIX
(Note: 1)
BYTE
DESCRIPTION
ENTRY (VERSION)
MT36LSDF6472G
MT36LSDF12872G
0
NUMBER OF BYTES USED BY MICRON
128
80
80
1
TOTAL NUMBER OF SPD MEMORY BYTES
256
08
08
2
MEMORY TYPE
SDRAM
04
04
3
NUMBER OF ROW ADDRESSES
12 or 13
0C
0D
4
NUMBER OF COLUMN ADDRESSES
11
0B
0B
5
NUMBER OF BANKS
2
02 02
6
MODULE DATA WIDTH
72
48
48
7
MODULE DATA WIDTH (continued)
0
00
00
8
MODULE VOLTAGE INTERFACE LEVELS
LVTTL
01
01
9
SDRAM CYCLE TIME,
t
CK
7 (-13E)
70
70
(CAS LATENCY = 3) (note 2)
7.5 (-133)
75
75
8 (-10E)
80
80
10
SDRAM ACCESS FROM CLOCK,
t
AC
5.4 (-13E/-133)
54
54
(CAS LATENCY = 3)
6 (-10E)
60
60
11
MODULE CONFIGURATION TYPE
ECC
02
02
12
REFRESH RATE/TYPE
15.6s/SELF / 7.81s/SELF
80
82
13
SDRAM WIDTH (PRIMARY SDRAM)
4
04
04
14
ERROR-CHECKING SDRAM DATA WIDTH
4
04
04
15
MIN. CLOCK DELAY FROM BACK-TO-BACK
1
01
01
RANDOM COLUMN ADDRESSES,
t
CCD
16
BURST LENGTHS SUPPORTED
1, 2, 4, 8, PAGE
8F
8F
17
NUMBER OF BANKS ON SDRAM DEVICE
4
04
04
18
CAS LATENCIES SUPPORTED
2, 3
06
06
19
CS LATENCY
0
01
01
20
WE LATENCY
0
01
01
21
SDRAM MODULE ATTRIBUTES
-13E/-133
1F
1F
-10E
1F
1F
22
SDRAM DEVICE ATTRIBUTES: GENERAL
0E
0E
0E
23
SDRAM CYCLE TIME,
t
CK
7.5 (-13E)
75
75
(CAS LATENCY = 2) (note 2)
10 (-133/-10E)
A0
A0
24
SDRAM ACCESS FROM CLK,
t
AC
5.4 (-13E)
54
54
(CAS LATENCY = 2) (note 2)
6 (-10E)
60
60
25
SDRAM CYCLE TIME,
t
CK
00
00
(CAS LATENCY = 1)
26
SDRAM ACCESS FROM CLK,
t
AC
00
00
(CAS LATENCY = 1)
27
MINIMUM ROW PRECHARGE TIME,
t
RP
15 (-13E)
0F
0F
20 (-133/-10E)
14
14
28
MINIMUM ROW ACTIVE TO ROW ACTIVE,
14 (-13E)
0E
0E
t
RRD
15 (-133)
0F
0F
20 (-10E)
14
14
29
MINIMUM RAS# TO CAS# DELAY,
t
RCD
15 (-13E)
0F
0F
20 (-133/-10E)
14
14
NOTE: 1. "1"/"0": Serial Data, "driven to HIGH"/"driven to LOW."
22
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
SERIAL PRESENCE-DETECT MATRIX (continued)
(Notes: 1, 2)
BYTE
DESCRIPTION
ENTRY (VERSION)
MT36LSDF6472G
MT36LSDF12872G
30
MINIMUM RAS# PULSE WIDTH,
t
RAS
45 (-13E)
2D
2D
(note 3)
44 (-133)
2C
2C
50 (-10E)
32
32
31
MODULE BANK DENSITY
256MB / 512MB
40
80
32
COMMAND AND ADDRESS SETUP TIME,
1.5 (-13E/-133)
15
15
t
AS,
t
CMS
2 (-10E)
20
20
33
COMMAND AND ADDRESS HOLD TIME,
0.8 (--13E/133)
08
08
t
AH,
t
CMH
1 (-10E)
10
10
34
DATA SIGNAL INPUT SETUP TIME,
t
DS
1.5 (-13E/-133)
15
15
2 (-10E)
20
20
35
DATA SIGNAL INPUT HOLD TIME,
t
DH
0.8 (-13E/-133)
08
08
1 (-10E)
10
10
36-61
RESERVED
00
00
62
SPD REVISION
REV. 1.2
12
12
63
CHECKSUM FOR BYTES 0-62
-13E
B3
F6
-133
F9
3C
-10E
41
84
64
MANUFACTURER'S JEDEC ID CODE
MICRON
2C
2C
65-71
MANUFACTURER'S JEDEC ID CODE (CONT.)
FF
FF
72
MANUFACTURING LOCATION
01
01
02
02
03
03
04
04
05
05
06
06
07
07
08
08
09
09
73-90
MODULE PART NUMBER (ASCII)
xx
xx
91
PCB IDENTIFICATION CODE
1
01
01
2
02
02
3
03
03
4
04
04
5
05
05
6
06
06
7
07
07
8
08
08
9
09
09
92
IDENTIFICATION CODE (CONT.)
0
00
00
93
YEAR OF MANUFACTURE IN BCD
xx
xx
94
WEEK OF MANUFACTURE IN BCD
xx
xx
95-98
MODULE SERIAL NUMBER
xx
xx
99-125
MANUFACTURER-SPECIFIC DATA (RSVD)
126
SYSTEM FREQUENCY
100/133 MHz
64
64
127
SDRAM COMPONENT AND CLOCK DETAIL
8F
8F
NOTE: 1. "1"/"0": Serial Data, "driven to HIGH"/"driven to LOW."
2. x = Variable Data.
3. The value of
t
RAS used for the -13E module is calculated from
t
RC -
t
RP. Actual device spec. value is 37ns.
23
64, 128 Meg x 72 Registered FBGA SDRAM DIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF36C64_128X72G_C.p65 Rev. C; Pub. 6/02
2002, Micron Technology, Inc.
512MB/1GB (x72, ECC)
168-PIN REGISTERED FBGA SDRAM DIMM
NOTE: All dimensions in inches (millimeters) MAX or typical where noted.
MIN
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc.
1.705 (43.31)
1.695 (43.05)
.128 (3.25)
.118 (3.00)
(2X)
PIN 1
.700 (17.78)
TYP.
.118 (3.00)
(2X)
.118 (3.00) TYP.
.250 (6.35) TYP.
4.550 (115.57)
.050 (1.27)
TYP.
.118 (3.00)
TYP.
.040 (1.02)
TYP.
.079 (2.00) R
(2X)
.039 (1.00) R(2X)
PIN 84
FRONT VIEW
BACK VIEW
PIN 168
PIN 85
2.625 (66.68)
1.661 (42.18)
.157 (3.99)
MAX
.054 (1.37)
.046 (1.17)
5.256 (133.50)
5.244 (133.20)
U1
U2
U3
U4
U5
U6
U7
U8
U9
U10
U11
U12
U13
U14
U39
U37
U38
U15
U16
U17
U18
U42
U28
U27
U26
U25
U24
U23
U22
U21
U20
U19
U29
U30
U31
U32
U40
U33
U34
U35
U36