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Электронный компонент: MT4VDDT1664WG-265__

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PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
09005aef80d7157a
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
1
2003 Micron Technology, Inc.
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
DDR SDRAM
MICRODIMM
MT4VDDT864W 64MB
MT4VDDT1664W 128MB
MT4VDDT3264W 256MB
For the latest data sheet, please refer to the Micron
Web
site:
www.micron.com/moduleds
Features
172-pin, small-outline, dual in-line memory
module (DDR SDRAM MicroDIMM)
Utilizes 200 MT/s, 266 MT/s, and 333 MT/s DDR
SDRAM components
Fast data transfer rates: PC1600, PC2100, or PC2700
64MB (8 Meg x 64), 128MB (16 Meg x 64), and
256MB (32 Meg x 64)
V
DD
= V
DD
Q= +2.5V
V
DDSPD
= +2.3V to +3.6V
2.5V I/O (SSTL_2 compatible)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Bidirectional data strobe (DQS) transmitted/
received with data--i.e., source-synchronous data
capture
Differential clock inputs (CK and CK#)
Four internal device banks for concurrent operation
Selectable burst lengths: 2, 4, or 8
Auto precharge option
Auto Refresh and Self Refresh Modes: 15.625s
(64MB); 7.8125s (128MB) maximum average
periodic refresh interval
Serial Presence Detect (SPD) with EEPROM
Selectable READ CAS latency for maximum
compatibility
Gold edge contacts
Figure 1: 172-pin MicroDIMM (MO-214)
NOTE:
1. Contact Micron for availability of lead-free prod-
ucts.
2. CL = CAS (READ) latency.
OPTIONS
MARKING
Package
172-pin MicroDIMM (standard)
G
172-pin MicroDIMM (lead-free)
Y
1
Memory Clock, Speed, CAS Latency
2
6ns (167 MHz), 333 MT/s, CL = 2.5
-335
7.5ns (133 MHz), 266 MT/s, CL = 2
-262
7.5ns (133 MHz), 266 MT/s, CL = 2
-26A
7.5ns (133 MHz), 266 MT/s, CL = 2.5
-265
10ns (100 MHz), 200 MT/s, CL = 2
-202
Table 1:
Address Table
64MB
128MB
256MB
Refresh Count
4K
8K
8K
Row Addressing
4K (A0A11)
8K(A0A12)
8K(A0A12)
Device Bank Addressing
4 (BA0, BA1)
4 (BA0, BA1)
4 (BA0, BA1)
Device Configuration
8 Meg x 16
16 Meg x 16
32 Meg x 16
Column Addressing
512 (A0A8)
512 (A0A8)
1K (A0A9)
Module Bank Addressing
1 (S0#)
1 (S0#)
1 (S0#)
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
2
2003 Micron Technology, Inc.
NOTE:
All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for
current revision codes. Example: MT4VDDT1664WG-265A1.
Table 2:
Part Numbers and Timing Parameters
PART NUMBER
MODULE
DENSITY CONFIGURATION
MODULE
BANDWIDTH
MEMORY CLOCK
DATA RATE
CLOCK LATENCY
(CL -
t
RCD -
t
RP)
MT4VDDT864WG-335__
64MB
8 Meg x 64
2.7 GB/s
6ns, 333 MT/s
2.5-3-3
MT4VDDT864WY-335__
64MB
8 Meg x 64
2.7 GB/s
6ns, 333 MT/s
2.5-3-3
MT4VDDT864WG-262__
64MB
8 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2-2-2
MT4VDDT864WY-262__
64MB
8 Meg x 64
2.1 GB/s
7.5ns ,266 MT/s
2-2-2
MT4VDDT864WG-26A__
64MB
8 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2-3-3
MT4VDDT864WY-26A__
64MB
8 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2-3-3
MT4VDDT864WG-265__
64MB
8 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2.5-3-3
MT4VDDT864WY-265__
64MB
8 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2.5-3-3
MT4VDDT864WG-202__
64MB
8 Meg x 64
1.6 GB/s
10ns, 200 MT/s
2-2-2
MT4VDDT864WY-202__
64MB
8 Meg x 64
1.6 GB/s
10ns, 200 MT/s
2-2-2
MT4VDDT1664WG-335__
128MB
16 Meg x 64
2.7 GB/s
6ns, 333 MT/s
2.5-3-3
MT4VDDT1664WY-335__
128MB
16 Meg x 64
2.7 GB/s
6ns, 333 MT/s
2.5-3-3
MT4VDDT1664WG-262__
128MB
16 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2-2-2
MT4VDDT1664WY-262__
128MB
16 Meg x 64
2.1 GB/s
7.5ns ,266 MT/s
2-2-2
MT4VDDT1664WG-26A__
128MB
16 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2-3-3
MT4VDDT1664WY-26A__
128MB
16 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2-3-3
MT4VDDT1664WG-265__
128MB
16 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2.5-3-3
MT4VDDT1664WY-265__
128MB
16 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2.5-3-3
MT4VDDT1664WG-202__
128MB
16 Meg x 64
1.6 GB/s
10ns, 200 MT/s
2-2-2
MT4VDDT1664WY-202__
128MB
16 Meg x 64
1.6 GB/s
10ns, 200 MT/s
2-2-2
MT4VDDT3264WG-335__
256MB
32 Meg x 64
2.7 GB/s
6ns, 333 MT/s
2.5-3-3
MT4VDDT3264WY-335__
256MB
32 Meg x 64
2.7 GB/s
6ns, 333 MT/s
2.5-3-3
MT4VDDT3264WG-262__
256MB
32 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2-2-2
MT4VDDT3264WY-262__
256MB
32 Meg x 64
2.1 GB/s
7.5ns ,266 MT/s
2-2-2
MT4VDDT3264WG-26A__
256MB
32 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2-3-3
MT4VDDT3264WY-26A__
256MB
32 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2-3-3
MT4VDDT3264WG-265__
256MB
32 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2.5-3-3
MT4VDDT3264WY-265__
256MB
32 Meg x 64
2.1 GB/s
7.5ns, 266 MT/s
2.5-3-3
MT4VDDT3264WG-202__
256MB
32 Meg x 64
1.6 GB/s
10ns, 200 MT/s
2-2-2
MT4VDDT3264WY-202__
256MB
32 Meg x 64
1.6 GB/s
10ns, 200 MT/s
2-2-2
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
3
2003 Micron Technology, Inc.
NOTE:
1.
Pin 73 is NC for the 64MB module. It is A12 for the 128MB and 256MB modules.
Figure 2: 172-Pin MicroDIMM Pinout
Table 3:
Pin Assignment
(172-Pin MicroDIMM Front)
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL
1
V
REF
45
V
DD
87
A10
/AP 131
V
DD
3
V
SS
47
DQS2
89
V
DD
133
V
SS
5
DQ0
49
DQ18
91
BA0
135
V
SS
7
DQ1
51
V
SS
93
WE#
137
DQ48
9
V
DD
53
DQ19
95
S0#
139
DQ49
11
DQS0
55
DQ24
97
NC
141
V
DD
13
DQ2
57
V
DD
99
V
SS
143
DQS6
15
V
SS
59
DQ25
101
DQ32
145
DQ50
17
DQ3
61
DQS3
103
DQ33
147
V
SS
19
DQ8
63
V
SS
105
V
DD
149
DQ51
21
V
DD
65
DQ26
107
DQS4
151
DQ56
23
DQ9
67
DQ27
109
DQ34
153
V
DD
25
DQS1
69
V
DD
111
V
SS
155
DQ57
27
V
SS
71
DNU
113
DQ35
157
DQS7
29
DQ10
73
NC/
A12
1
115
DQ40
159
V
SS
31
DQ11
75
A9
117
V
DD
161
DQ58
33
V
DD
77
A7
119
DQ41
163
DQ59
35
CK0
79
V
SS
121
DQS5
165
V
DD
37
CK0#
81
A5
123
V
SS
167
SDA
39
V
SS
83
A3
125
DQ42
169
SCL
41
DQ16
85
A1
127
DQ43
171
V
DDSPD
43
DQ17
129
V
DD
Table 4:
Pin Assignment
(172-pin MicroDIMM Back)
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL
2
V
REF
46
V
DD
88
BA1
132
CK1#
4
V
SS
48
DM2
90
V
DD
134
CK1
6
DQ4
50
DQ22
92
RAS#
136
V
SS
8
DQ5
52
V
SS
94
CAS#
138
DQ52
10
V
DD
54
DQ23
96
DNU
140
DQ53
12
DM0
56
DQ28
98
NC
142
V
DD
14
DQ6
58
V
DD
100
V
SS
144
DM6
16
V
SS
60
DQ29
102
DQ36
146
DQ54
18
DQ7
62
DM3
104
DQ37
148
V
SS
20
DQ12
64
V
SS
106
V
DD
150
DQ55
22
V
DD
66
DQ30
108
DM4
152
DQ60
24
DQ13
68
DQ31
110
DQ38
154
V
DD
26
DM1
70
V
DD
112
V
SS
156
DQ61
28
V
SS
72
CKE0
114
DQ39
158
DM7
30
DQ14
74
A11
116
DQ44
160
V
SS
32
DQ15
76
A8
118
V
DD
162
DQ62
34
V
DD
78
A6
120
DQ45
164
DQ63
36
V
DD
80
V
SS
122
DM5
166
V
DD
38
V
SS
82
A4
124
V
SS
168
SA0
40
V
SS
84
A2
126
DQ46
170
SA1
42
DQ20
86
A0
128
DQ47
172
SA2
44
DQ21
130
V
DD
U1
U2
U4
U3
PIN 1
PIN 171
(All Odd Numbered Pins)
PIN 172
PIN 2
(All Even Numbered Pins)
Front View
Back View
U5
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
4
2003 Micron Technology, Inc.
Table 5:
Pin Descriptions
Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information
PIN NUMBERS
SYMBOL
TYPE
DESCRIPTION
92, 93, 94
WE#, CAS#,
RAS#
Input
Command Inputs: RAS#, CAS#, and WE# (along with S#)
define the command being entered.
35, 37, 132, 134
CK0, CK0#
CK1, CK1#
Input
Clock: CK and CK# are differential clock inputs. All address
and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of CK#. Output data
(DQs and DQS) is refer- enced to the crossings of CK and CK#.
72
CKE0
Input
Clock Enable: CKE HIGH activates and CKE LOW deactivates
the internal clock, input buffers, and output drivers. Taking
CKE LOW provides PRECHARGE POWER-DOWN and SELF
REFRESH operations (all device banks idle), or ACTIVE
POWER-DOWN (row ACTIVE in any device bank). CKE is
synchronous for POWER-DOWN entry and exit, and for SELF
REFRESH entry. CKE is asynchronous for SELF REFRESH exit
and for disabling the outputs. CKE must be maintained HIGH
throughout read and write accesses. Input buffers (excluding
CK, CK# and CKE) are disabled during POWER-DOWN. Input
buffers (excluding CKE) are disabled during SELF REFRESH.
CKE is an SSTL_2 input but will detect an LVCMOS LOW level
after V
DD
is applied and until CKE is first brought HIGH. After
CKE is brought HIGH, it becomes an SSTL_2 input only.
95
S0#
Input
Chip Select: S# enables (registered LOW) and disables
(registered HIGH) the command decoder. All commands are
masked when S# is registered HIGH. S# is considered part of
the command code.
88, 91
BA0, BA1
Input
Bank Address: BA0 and BA1 define to which device bank an
ACTIVE, READ, WRITE, or PRECHARGE command is being
applied.
73
(128MB, 256MB)
, 75, 77,
81, 83, 85, 87, 74, 76, 78, 82,
84, 86
A0A11
(64MB)
A0A12
(128MB, 256MB)
Input
Address Inputs: A0-A11/A12 provide the row address for
ACTIVE commands, and the column address and auto
precharge bit (A10) for READ/WRITE commands, to select
one location out of the memory array in the respective
device bank. A10 sampled during a PRECHARGE command
determines whether the PRECHARGE applies to one device
bank (A10 LOW, device bank selected by BA0, BA1) or all
device banks (A10 HIGH). The address inputs also provide the
op-code during a MODE REGISTER SET command. BA0 and
BA1 define which mode register (mode register or extended
mode register) is loaded during the LOAD MODE REGISTER
command.
12, 26, 48, 62, 108, 122, 144,
158
DM0DM7
Input
Data Mask: DM is an input mask signal for write data. Input
data is masked when DM is sampled HIGH along with that
input data during a WRITE access. DM is sampled on both
edges of DQS. Although DM pins are input-only, the DM
loading is designed to match that of DQ and DQS pins.
1, 2
V
REF
Input
SSTL_2 reference voltage.
167
SDA
Input/
Output
Serial Presence-Detect Data: SDA is a bidirectional pin used
to transfer addresses and data into and out of the presence-
detect portion of the module.
169
SCL
Input
Serial Clock for Presence-Detect: SCL is used to synchronize
the presence-detect data transfer to and from the module.
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
5
2003 Micron Technology, Inc.
168, 170, 172
SA0SA2
Input
Presence-Detect Address Inputs: These pins are used to
configure the presence-detect device.
11, 25, 47, 61, 107, 121, 143,
157
DQS0-DQS7
Input/
Output
Data Strobe: Output with READ data, input with WRITE data.
DQS is edge-aligned with READ data, centered in WRITE
data. Used to capture data.
5, 7, 13, 17, 19, 23, 29, 31 41,
43, 49, 53, 55, 59, 65, 67, 101,
103, 109, 113, 115, 119, 125,
127, 137, 139, 145, 149, 151,
155, 161, 163, 6, 8, 14, 18, 20,
24, 30, 32, 42, 44, 50, 54, 56,
60, 66, 68, 102, 104, 110, 114,
116, 120, 126, 128, 138, 140,
146, 150, 152, 156, 162, 164
DQ0-DQ63
Input/
Output
Data I/Os: Data bus.
9, 21, 33, 45, 57, 69, 89, 105,
117, 129, 131, 141, 153, 165,
10, 22, 34, 36, 46, 58, 90, 106,
118, 130 142, 154, 166
V
DD
Supply
DQ Power Supply: +2.5V 0.2V.
3, 15, 27, 39, 51, 63, 99, 111,
123, 133, 135, 147, 159, 4, 16,
28, 38,40, 52, 64, 100, 112,
124, 136, 148, 160
V
SS
Supply
Ground: +2.3V to +3.6V.
171
V
DDSPD
Supply
Serial EEPROM positive power supply.
73 (64MB), 97, 98
NC
No Connect: These pins should be left unconnected.
71, 96
DNU
Do Not Use: These pins are not connected on this module but
are assigned pins on other modules in this product family.
Table 5:
Pin Descriptions
Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information
PIN NUMBERS
SYMBOL
TYPE
DESCRIPTION
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
6
2003 Micron Technology, Inc.
Figure 3: Functional Block Diagram
DM3
DM2
DQ0
DQ1
DQ2
DQ3
DM0
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
U1
DQ12
DQ13
DQ14
DQ15
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
U2
DQ28
DQ29
DQ30
DQ31
DQ40
DQ41
DQ42
DQ43
U3
DM4
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
U4
DQ60
DQ61
DQ62
DQ63
DM1
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DM5
DM6
DM7
S0#
S0#
S0#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
S0#
BA0-BA1
A0-A11(64MB)
RAS#
CAS#
WE#
CKE0
DDR SDRAMS U1-U4
CK0
CK0#
CK1
CK1#
DDR SDRAMs U1, U3
DDR SDRAMs U2, U4
DQS0
UDQS
DQS1
LDQS
DQS2
DQS3
DQS7
DQS6
DQS5
DQS4
DDR SDRAMS U1-U4
DDR SDRAMS U1-U4
DDR SDRAMS U1-U4
DDR SDRAMS U1-U4
DDR SDRAMS U1-U4
S0#
A0
SA0
SERIAL PD
SDA
A1
SA1
A2
SA2
WP
SCL
U5
V
REF
V
SS
DDR SDRAMS
DDR SDRAMS
V
DD
DDR SDRAMS
V
DDSPD
SPD
A0-A12(128MB, 256MB)
DDR SDRAMS U1-U4
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
120
120
6.6pF
6.6pF
NOTE:
1.
Unless otherwise noted, resistor values are 22
W 5%.
2.
DQ wiring may differ from that described in this drawing; how-
ever, DQ/DM/DQS relationships are maintained as shown.
DDR SDRAMs = MT46V8M16TG for 64MB module
DDR SDRAMs = MT46V16M16TG for 128MB module
DDR SDRAMs = MT46V32M16TG for 256MB module
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
7
2003 Micron Technology, Inc.
General Description
The MT4VDDT864W, MT4VDDT1664W, and
MT4VDDT3264W are high-speed CMOS, dynamic ran-
dom-access, 64MB, 128MB, and 256MB memory mod-
ules organized in a x64 configuration. DDR SDRAM
modules use internally configured quad-bank DDR
SDRAM devices.
DDR SDRAM modules use a double data rate archi-
tecture to achieve high-speed operation. The double
data rate architecture is essentially a 2n-prefetch
architecture with an interface designed to transfer two
data words per clock cycle at the I/O pins. A single read
or write access for the DDR SDRAM module effectively
consists of a single 2n-bit wide, one-clock-cycle data
transfer at the internal DRAM core and two corre-
sponding n-bit wide, one-half-clock-cycle data trans-
fers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted
externally, along with data, for use in data capture at
the receiver. DQS is an intermittent strobe transmitted
by the DDR SDRAM during READs and by the memory
controller during WRITEs. DQS is edge-aligned with
data for READs and center-aligned with data for
WRITEs.
DDR SDRAM modules operate from differential
clocks (CK and CK#); the crossing of CK going HIGH
and CK# going LOW will be referred to as the positive
edge of CK. Commands (address and control signals)
are registered at every positive edge of CK. Input data
is registered on both edges of DQS, and output data is
referenced to both edges of DQS, as well as to both
edges of CK.
Read and write accesses to DDR SDRAM modules
are burst oriented; accesses start at a selected location
and continue for a programmed number of locations
in a programmed sequence. Accesses begin with the
registration of an ACTIVE command, which is then fol-
lowed by a READ or WRITE command. The address
bits registered coincident with the ACTIVE command
are used to select the device bank and row to be
accessed (BA0, BA1 select devices bank, A0A11
(64MB) or A0A12 (128MB, 256MB) select device row ).
The address bits registered coincident with the READ
or WRITE command are used to select the device bank
and the starting device column location for the burst
access.
These DDR SDRAM modules provide for program-
mable read or write burst lengths of 2, 4, or 8 locations.
An auto precharge function may be enabled to provide
a self-timed row precharge that is initiated at the end
of the burst access.
The pipelined, multibank architecture of DDR
SDRAM modules allows for concurrent operation,
thereby providing high effective bandwidth by hiding
row precharge and activation time.
An auto refresh mode is provided, along with a
power-saving power-down mode. All inputs are com-
patible with the JEDEC Standard for SSTL_2. All out-
puts are SSTL_2, Class II compatible. For more
information regarding DDR SDRAM operation, refer to
the 128Mb, 256Mb, and 512Mb DDR SDRAM data
sheets.
Serial Presence-Detect Operation
These DDR SDRAM modules incorporate serial
presence-detect (SPD). The SPD function is imple-
mented using a 2,048-bit EEPROM. This nonvolatile
storage device contains 256 bytes. The first 128 bytes
can be programmed by Micron to identify the module
type and various SDRAM organizations and timing
parameters. The remaining 128 bytes of storage are
available for use by the customer. System READ/
WRITE operations between the master (system logic)
and the slave EEPROM device (DIMM) occur via a
standard I
2
C bus using the DIMM's SCL (clock) and
SDA (data) signals, together with SA (2:0), which pro-
vide eight unique DIMM/EEPROM addresses. Write
protect (WP) is tied to ground on the module, perma-
nently disabling hardware write protect.
Mode Register Definition
The mode register is used to define the specific
mode of operation of the DDR SDRAM. This definition
includes the selection of a burst length, a burst type, a
CAS latency and an operating mode, as shown in
Figure 4, Mode Register Definition Diagram, on page 8.
The mode register is programmed via the MODE REG-
ISTER SET command (with BA0 = 0 and BA1 = 0) and
will retain the stored information until it is pro-
grammed again or the device loses power (except for
bit A8, which is self-clearing).
Reprogramming the mode register will not alter the
contents of the memory, provided it is performed cor-
rectly. The mode register must be loaded (reloaded)
when all device banks are idle and no bursts are in
progress, and the controller must wait the specified
time before initiating the subsequent operation. Vio-
lating either of these requirements will result in
unspecified operation.
Mode register bits A0A2 specify the burst length,
A3 specifies the type of burst (sequential or inter-
leaved), A4A6 specify the CAS latency, and A7A11
(64MB), or A7A12 (128MB, 256MB) specify the oper-
ating mode.
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
8
2003 Micron Technology, Inc.
Burst Length
Read and write accesses to the DDR SDRAM are
burst oriented, with the burst length being program-
mable, as shown in Figure 4, Mode Register Definition
Diagram. The burst length determines the maximum
number of column locations that can be accessed for a
given READ or WRITE command. Burst lengths of 2, 4,
or 8 locations are available for both the sequential and
the interleaved burst types. Reserved states should not
be used, as unknown operation or incompatibility with
future versions may result.
When a READ or WRITE command is issued, a block
of columns equal to the burst length is effectively
selected. All accesses for that burst take place within
this block, meaning that the burst will wrap within the
block if a boundary is reached. The block is uniquely
selected by A1Ai when the burst length is set to two,
by A2Ai when the burst length is set to four and by
A3Ai when the burst length is set to eight (where Ai is
the most significant column address bit for a given
configuration. See Note 5 of Table 6, Burst Definition
Table, on page 9). The remaining (least significant)
address bit(s) is (are) used to select the starting loca-
tion within the block. The programmed burst length
applies to both read and write bursts.
Burst Type
Accesses within a given burst may be programmed
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
The ordering of accesses within a burst is deter-
mined by the burst length, the burst type and the start-
ing column address, as shown in Table 6, Burst
Definition Table, on page 9.
Read Latency
The READ latency is the delay, in clock cycles,
between the registration of a READ command and the
availability of the first bit of output data. The latency
can be set to 2 or 2.5 clocks, as shown in Figure 5, CAS
Latency Diagram, on page 9.
If a READ command is registered at clock edge n,
and the latency is m clocks, the data will be available
nominally coincident with clock edge n + m. Table 7,
CAS Latency (CL) Table, on page 9, indicates the oper-
ating frequencies at which each CAS latency setting
can be used.
Reserved states should not be used as unknown
operation or incompatibility with future versions may
result.
Operating Mode
The normal operating mode is selected by issuing a
MODE REGISTER SET command with bits A7A11
(64MB) or A7A12 (128MB, 256MB) each set to zero,
and bits A0A6 set to the desired values. A DLL reset is
initiated by issuing a MODE REGISTER SET command
with bits A7 and A9A11 (64MB) or A9A12 (128MB)
each set to zero, bit A8 set to one, and bits A0A6 set to
the desired values.
Figure 4: Mode Register Definition
Diagram
M3 = 0
Reserved
2
4
8
Reserved
Reserved
Reserved
Reserved
M3 = 1
Reserved
2
4
8
Reserved
Reserved
Reserved
Reserved
Operating Mode
Normal Operation
Normal Operation/Reset DLL
All other states reserved
0
1
-
0
0
-
0
0
-
0
0
-
0
0
-
0
0
-
Valid
Valid
-
0
1
Burst Type
Sequential
Interleaved
CAS Latency
Reserved
Reserved
2
Reserved
Reserved
Reserved
2.5
Reserved
Burst Length
M0
0
1
0
1
0
1
0
1
Burst Length
CAS Latency BT
0*
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Mode Register (Mx)
Address Bus
9
7
6
5
4
3
8
2
1
0
M1
0
0
1
1
0
0
1
1
M2
0
0
0
0
1
1
1
1
M3
M4
0
1
0
1
0
1
0
1
M5
0
0
1
1
0
0
1
1
M6
0
0
0
0
1
1
1
1
M6-M0
M8 M7
Operating Mode
A10
A12 A11
BA0
BA1
10
11
12
13
0*
14
* M14 and M13 (BA1 and BA0)
must be "0, 0" to select the
base mode register (vs. the
extended mode register).
M9
M10
M12 M11
Burst Length
CAS Latency BT
0*
0*
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Mode Register (Mx)
Address Bus
9
7
6
5
4
3
8
2
1
0
Operating Mode
A10
A11
BA0
BA1
10
11
12
13
* M13 and M12 (BA1 and BA0)
must be "0, 0" to select the
base mode register (vs. the
extended mode register).
64MB Modules
128MB, 256MB Modules
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
9
2003 Micron Technology, Inc.
NOTE:
1.
For a burst length of two, A1
Ai select the two-data-
element block; A0 selects the first access within the
block.
2.
For a burst length of four, A2
Ai select the four-data-
element block; A0-A1 select the first access within the
block.
3.
For a burst length of eight, A3
Ai select the eight-
data-element block; A0
A2 select the first access
within the block.
4.
Whenever a boundary of the block is reached within a
given sequence above, the following access wraps
within the block.
5.
i = 8 (64MB, 128MB)
i = 9 (256MB)
Figure 5: CAS Latency Diagram
Although not required by the Micron device, JEDEC
specifications recommend when a LOAD MODE REG-
ISTER command is issued to reset the DLL, it should
always be followed by a LOAD MODE REGISTER com-
mand to select normal operating mode.
All other combinations of values for A7A11 (64MB)
or A7A12 (128MB, 256MB) are reserved for future use
and/or test modes. Test modes and reserved states
should not be used because unknown operation or
incompatibility with future versions may result.
Extended Mode Register
The extended mode register controls functions
beyond those controlled by the mode register; these
additional functions are DLL enable/disable and out-
put drive strength. These functions are controlled via
the bits shown in Figure 6, Extended Mode Register
Diagram, on page 10. The extended mode register is
programmed via the LOAD MODE REGISTER com-
mand to the mode register (with BA0 = 1 and BA1 = 0)
and will retain the stored information until it is pro-
grammed again or the device loses power. The
enabling of the DLL should always be followed by a
LOAD MODE REGISTER command to the mode regis-
ter (BA0/BA1 both low) to reset the DLL.
The extended mode register must be loaded when
all device banks are idle and no bursts are in progress,
and the controller must wait the specified time before
Table 6:
Burst Definition Table
BURST
LENGTH
STARTING
COLUMN
ADDRESS
ORDER OF ACCESSES WITHIN A
BURST
TYPE =
SEQUENTIAL
TYPE =
INTERLEAVED
2
A0
0
0-1
0-1
1
1-0
1-0
4
A1 A0
0
0
0-1-2-3
0-1-2-3
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
2-3-0-1
1
1
3-0-1-2
3-2-1-0
8
A2 A1 A0
0
0
0
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
0
1
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
0
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
Table 7:
CAS Latency (CL) Table
SPEED
ALLOWABLE
OPERATING CLOCK FREQUENCY (MHZ)
CL = 2
CL = 2.5
-335
75
f 133
75
f 167
-262
75
f 133
75
f 133
-26A
75
f 133
75
f 133
-265
75
f 100
75
f 133
-202
75
f 100
N/A
CK
CK#
COMMAND
DQ
DQS
CL = 2
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
Burst Length = 4 in the cases shown
Shown with nominal tAC, tDQSCK, and tDQSQ
CK
CK#
COMMAND
DQ
DQS
CL = 2.5
T0
T1
T2
T2n
T3
T3n
T0
T1
T2
T2n
T3
T3n
DON'T CARE
TRANSITIONING DATA
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
10
2003 Micron Technology, Inc.
initiating any subsequent operation. Violating either of
these requirements could result in unspecified opera-
tion.
Output Drive Strength
The normal full drive strength for all outputs are
specified to be SSTL2, Class II. The reduced drive
option is intended for the support of the lighter load
and/or point-to-point environments. The selection of
the reduced drive strength will alter the DQs and DQSs
from SSTL2, Class II drive strength to a reduced drive
strength, which is approximately 54 percent of the
SSTL2, Class II drive strength.
DLL Enable/Disable
The DLL must be enabled for normal operation.
DLL enable is required during power-up initialization
and upon returning to normal operation after having
disabled the DLL for the purpose of debug or evalua-
tion. (When the device exits self refresh mode, the DLL
is enabled automatically.) Any time the DLL is
enabled, 200 clock cycles must occur before a READ
command can be issued.
Figure 6: Extended Mode Register
Diagram
NOTE:
1.
BA1 and BA0 (E13 and E12 for 64MB, or E14 and E13
for 128MB and 256MB) must be "1, 0" to select the
Extended Mode Register (vs. the base Mode Register).
2.
The QFC# option is not supported.
Operating Mode
Reserved
Reserved
0
0
Valid
0
1
DLL
Enable
Disable
DLL
11
01
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Extended Mode
Register (Ex)
Address Bus
9
7
6
5
4
3
8
2
1
0
E0
0
1
Drive Strength
Normal
Reduced
E1
E0
E1,
Operating Mode
A10
A11
A12
BA1 BA0
10
11
12
13
14
E3
E4
0
0
0
0
0
E6 E5
E7
E8
E9
0
0
E10
E11
0
E12
DS
DLL
01
11
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Extended Mode
Register (Ex)
Address Bus
9
7
6
5
4
3
8
2
1
0
Operating Mode
A10
A11
BA1 BA0
10
11
12
13
DS
64MB Module
128MB and 256MB Modules
0
E2
2
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
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2003 Micron Technology, Inc.
Commands
Table 8, Commands Truth Table, and Table 9, DM
Operation Truth Table, provide a general reference of
available commands. For a more detailed description
of commands and operations, refer to the Micron
128Mb, 256Mb, or 512Mb DDR SDRAM data sheets.
NOTE:
1.
DESELECT and NOP are functionally interchangeable.
2.
BA0BA1 provide device bank address and AA11 (64MB) or A0A12 (128MB) provide row address.
3.
BA0BA1 provide device bank address; A0A8 provides column address; A10 HIGH enables the auto precharge feature
(nonpersistent), and A10 LOW disables the auto precharge feature.
4.
Applies only to read bursts with auto precharge disabled; this command is undefined (and should not be used) for read
bursts with auto precharge enabled and for write bursts.
5.
A10 LOW: BA0-BA1 determine which device bank is precharged. A10 HIGH: all device banks are precharged and BA0-
BA1 are "Don't Care."
6.
This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
7.
Internal refresh counter controls row addressing; all inputs and I/Os are "Don't Care" except for CKE.
8.
BA0-BA1 select either the mode register or the extended mode register (BA0 = 0, BA1 = 0 select the mode register; BA0
= 1, BA1 = 0 select extended mode register; other combinations of BA0-BA1 are reserved). A0A11 (64MB) or A0A12
(128MB, 256MB) provide the op-code to be written to the selected mode register.
Table 8:
Commands Truth Table
CKE is HIGH for all commands shown except SELF REFRESH
NAME (FUNCTION)
CS#
RAS#
CAS#
WE#
ADDR
NOTES
DESELECT (NOP)
H
X
X
X
X
1
NO OPERATION (NOP)
L
H
H
H
X
1
ACTIVE (Select device bank and activate row)
L
L
H
H
Bank/Row
2
READ (Select device bank and column, and start READ burst)
L
H
L
H
Bank/Col
3
WRITE (Select device bank and column, and start WRITE burst)
L
H
L
L
Bank/Col
3
BURST TERMINATE
L
H
H
L
X
4
PRECHARGE (Deactivate row in device bank or banks)
L
L
H
L
Code
5
AUTO REFRESH or SELF REFRESH (Enter self refresh mode)
L
L
L
H
X
6, 7
LOAD MODE REGISTER
L
L
L
L
Op-Code
8
Table 9:
DM Operation Truth Table
Used to mask write data; provided coincident with the corresponding data
NAME (FUNCTION)
DM
DQS
Write Enable
L
Valid
Write Inhibit
H
X
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
12
2003 Micron Technology, Inc.
Absolute Maximum Ratings
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
V
DD
Supply Voltage Relative to V
SS
. . . . -1V to +3.6V
V
DD
Q Supply Voltage Relative to V
SS
. . . -1V to +3.6V
V
REF
and Inputs Voltage
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
I/O Pins Voltage
Relative to Vss. . . . . . . . . . . . . -0.5V to V
DD
Q +0.5V
Operating Temperature,
T
A
(ambient) . . . . . . . . . . . . . . . . . . . . . .0C to +70C
Storage Temperature (plastic) . . . . . . -55C to +150C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 15, 14; notes appear on pages 2023; 0
C T
A
+70C
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
Supply Voltage
V
DD
2.3
2.7
V
32, 37
I/O Supply Voltage
V
DD
Q
2.3
2.7
V
32, 37
I/O Reference Voltage
V
REF
0.49 x V
DD
Q 0.51 x V
DD
Q
V
6, 40
I/O Termination Voltage (system)
V
TT
V
REF
- 0.04
V
REF
+ 0.04
V
7, 40
Input High (Logic 1) Voltage
V
IH
(DC)
V
REF
+ 0.15
VDD + 0.3
V
25
Input Low (Logic 0) Voltage
V
IL
(DC)
-0.3
V
REF
- 0.15
V
25
INPUT LEAKAGE CURRENT
Any input 0V
V
IN
V
DD
, V
REF
pin 0V
V
IN
1.35V
(All other pins not under test = 0V)
Command/ Address,
RAS#, CAS#, WE#
I
I
-8
8
A
CK, CK#
I
I
-4
4
A
DQS, DM
-2
2
A
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
V
OUT
V
DD
Q)
DQ
I
OZ
-5
5
A
OUTPUT LEVELS:
Low Current (V
OUT
= 0.373V, maximum V
REF
, maximum V
TT
)
I
OH
-16.8
mA
33, 35
I
OL
16.8
mA
OUTPUT LEVELS: Reduced drive option - x16 only
High Current (V
OUT
= V
DD
Q-0.373V, minimum V
REF
, minimum V
TT
)
Low Current (V
OUT
= 0.373V, maximum V
REF
, maximum V
TT
)
IOH
-9
mA
34, 35
I
OL
9
mA
Table 11: AC Input Operating Conditions
Notes: 15, 14; notes appear on pages 2023; 0
C T
A
+70C; V
DD
= V
DD
Q = +2.5V 0.2V
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
V
IH
(AC)
V
REF
+ 0.310
V
12, 25, 36
Input Low (Logic 0) Voltage
V
IL
(AC)
V
REF
- 0.310
V
12, 25, 36
I/O Reference Voltage
V
REF
(AC)
0.49 x V
DD
Q
0.51 x V
DD
Q
V
6
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
13
2003 Micron Technology, Inc.
Table 12: I
DD
Specifications and Conditions 64MB
DRAM components only
Notes: 15, 8, 10, 12, 49; notes appear on pages 2023; 0
C T
A
+70C; V
DD
= V
DD
Q = +2.5V 0.2V
PARAMETER/CONDITION
SYMBOL
MAX
UNITS
NOTES
-335
-262
-26A/
-265
-202
OPERATING CURRENT: One device bank; Active-Precharge;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); DQ, DM, and DQS inputs
changing once per clock cycle; Address and control inputs
changing once every two clock cycles;
I
DD0
500
440
420
420
mA
20, 43
OPERATING CURRENT: One device bank; Active-Read-
Precharge; Burst = 2;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); I
OUT
=
0mA; Address and control inputs changing once per clock
cycle
I
DD1
540
480
480
480
mA
20, 43
PRECHARGE POWER-DOWN STANDBY CURRENT: All device
banks idle; Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW;
I
DD2P
12
12
12
12
mA
21, 28, 45
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
CK =
t
CK (MIN); CKE = HIGH; Address and other control
inputs changing once per clock cycle. V
IN
= V
REF
for DQ, DQS,
and DM
I
DD2F
180
180
160
160
mA
46
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW
I
DD3P
100
100
80
80
mA
21, 28, 45
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One
device bank; Active-Precharge;
t
RC =
t
RAS (MAX);
t
CK =
t
CK
(MIN); DQ, DM, and DQS inputs changing twice per clock
cycle; Address and other control inputs changing once per
clock cycle
I
DD3N
200
200
180
180
mA
42
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;
One device bank active; Address and control inputs changing
once per clock cycle;
t
CK =
t
CK (MIN); I
OUT
= 0mA
I
DD4R
560
520
500
500
mA
20, 43,
24, 45
OPERATING CURRENT: Burst = 2; Writes; Continuous burst;
One device bank active; Address and control inputs changing
once per clock cycle;
t
CK =
t
CK (MIN); DQ, DM, and DQS
inputs changing twice per clock cycle
I
DD4W
560
500
480
480
mA
20
AUTO REFRESH CURRENT
t
RC =
t
REFC (MIN)
I
DD5
1,060
880
880
880
mA
24, 45
t
REFC = 15.625s
I
DD5A
20
20
20
20
mA
24, 45
SELF REFRESH CURRENT: CKE
0.2V
I
DD6
12
12
8
8
mA
9
OPERATING CURRENT: Four device bank interleaving READs
(BL=4) with auto precharge,
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN);
Address and control inputs change only during Active, READ,
or WRITE commands.
I
DD7
1,420
1,320
1,300
1,300
mA
20, 44
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
14
2003 Micron Technology, Inc.
Table 13: I
DD
Specifications and Conditions 128MB
DRAM components only
Notes: 15, 8, 10, 12, 49; notes appear on pages 2023; 0
C T
A
+70C; V
DD
= V
DD
Q = +2.5V 0.2V
PARAMETER/CONDITION
SYMBOL
MAX
UNITS
NOTES
-335
-262
-26A/
-265
-202
OPERATING CURRENT: One device bank; Active-Precharge;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); DQ, DM, and DQS inputs
changing once per clock cycle; Address and control inputs
changing once every two clock cycles;
I
DD0
500
500
420
480
mA
20, 43
OPERATING CURRENT: One device bank; Active-Read-
Precharge; Burst = 4;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); I
OUT
=
0mA; Address and control inputs changing once per clock
cycle
I
DD1
680
640
580
620
mA
20, 43
PRECHARGE POWER-DOWN STANDBY CURRENT: All device
banks idle; Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW;
I
DD2P
16
16
16
16
mA
21, 28, 45
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
CK =
t
CK (MIN); CKE = HIGH; Address and other control
inputs changing once per clock cycle. V
IN
= V
REF
for DQ, DQS,
and DM
I
DD2F
200
180
180
180
mA
46
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW
I
DD3P
120
100
100
120
mA
21, 28, 45
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One
device bank; Active-Precharge;
t
RC =
t
RAS (MAX);
t
CK =
t
CK
(MIN); DQ, DM, and DQS inputs changing twice per clock
cycle; Address and other control inputs changing once per
clock cycle
I
DD3N
240
200
20
200
mA
42
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;
One device bank active; Address and control inputs changing
once per clock cycle;
t
CK =
t
CK (MIN); I
OUT
= 0mA
I
DD4R
700
600
600
700
mA
20, 43,
24, 45
OPERATING CURRENT: Burst = 2; Writes; Continuous burst;
One device bank active; Address and control inputs changing
once per clock cycle;
t
CK =
t
CK (MIN); DQ, DM, and DQS
inputs changing twice per clock cycle
I
DD4W
620
540
540
760
mA
20
AUTO REFRESH CURRENT
t
RC =
t
REFC (MIN)
I
DD5
1,020
940
940
980
mA
24, 45
t
REFC = 7.8125s
I
DD5A
24
24
24
24
mA
24, 45
SELF REFRESH CURRENT: CKE
0.2V
I
DD6
16
16
16
16
mA
9
OPERATING CURRENT: Four device bank interleaving READs
(BL=4) with auto precharge,
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN);
Address and control inputs change only during Active, READ,
or WRITE commands.
I
DD7
1,620
1,400
1,400
1,460
mA
20, 44
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
15
2003 Micron Technology, Inc.
Table 14: I
DD
Specifications and Conditions 256MB
DRAM components only
Notes: 15, 8, 10, 12, 49; notes appear on pages 2023; 0
C T
A
+70C; V
DD
= V
DD
Q = +2.5V 0.2V
PARAMETER/CONDITION
SYMBOL
MAX
UNITS
NOTES
-335
-262
-26A/
-265
-202
OPERATING CURRENT: One device bank; Active-Precharge;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); DQ, DM, and DQS inputs
changing once per clock cycle; Address and control inputs
changing once every two clock cycles;
I
DD0
520
520
460
460
mA
20, 43
OPERATING CURRENT: One device bank; Active-Read-
Precharge; Burst = 4;
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN); I
OUT
=
0mA; Address and control inputs changing once per clock
cycle
I
DD1
640
640
580
580
mA
20, 43
PRECHARGE POWER-DOWN STANDBY CURRENT: All device
banks idle; Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW;
I
DD2P
20
20
20
20
mA
21, 28, 45
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
CK =
t
CK (MIN); CKE = HIGH; Address and other control
inputs changing once per clock cycle. V
IN
= V
REF
for DQ, DQS,
and DM
I
DD2F
180
180
160
160
mA
46
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
t
CK =
t
CK (MIN); CKE = LOW
I
DD3P
140
140
120
120
mA
21, 28, 45
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One
device bank; Active-Precharge;
t
RC =
t
RAS (MAX);
t
CK =
t
CK
(MIN); DQ, DM, and DQS inputs changing twice per clock
cycle; Address and other control inputs changing once per
clock cycle
I
DD3N
180
180
160
160
mA
42
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;
One device bank active; Address and control inputs changing
once per clock cycle;
t
CK =
t
CK (MIN); I
OUT
= 0mA
I
DD4R
660
660
580
580
mA
20, 43,
24, 45
OPERATING CURRENT: Burst = 2; Writes; Continuous burst;
One device bank active; Address and control inputs changing
once per clock cycle;
t
CK =
t
CK (MIN); DQ, DM, and DQS
inputs changing twice per clock cycle
I
DD4W
620
620
540
540
mA
20
AUTO REFRESH CURRENT
t
RC =
t
REFC (MIN)
I
DD5
1,160
1,160
1,120
1,120
mA
24, 45
t
REFC = 7.8125s
I
DD5A
40
40
40
40
mA
24, 45
SELF REFRESH CURRENT: CKE
0.2V
I
DD6
20
20
20
20
mA
9
OPERATING CURRENT: Four device bank interleaving READs
(BL=4) with auto precharge,
t
RC =
t
RC (MIN);
t
CK =
t
CK (MIN);
Address and control inputs change only during Active, READ,
or WRITE commands.
I
DD7
1,620
1,600
1,400
1,400
mA
20, 44
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
16
2003 Micron Technology, Inc.
Table 15: Capacitance
Note: 11; notes appear on pages 2023
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input/Output Capacitance: DQ, DQS, DM
C
IO
4.0
5.0
pF
Input Capacitance: Command and Address, S#, CKE
C
I
1
8.0
12.0
pF
Input Capacitance: CK, CK#
C
I
2
4.0
6.0
pF
Input Capacitance: SDA
C
I
3
8.0
pF
Input Capacitance: SCL, SA0, SA2
C
I
4
6.0
pF
Table 16: Electrical Characteristics and Recommended AC Operating Conditions
(-335 and -262 Speed Grades)
Notes: 15, 1215, 29, 49; notes appear on pages 2023; 0
C T
A
+70C; V
DD
= V
DD
Q = +2.5V 0.2V
AC CHARACTERISTICS
-335
-262
UNITS
NOTES
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
Access window of DQ from CK/CK#
t
AC
-0.7
+0.7
-0.75
+0.75
ns
CK high-level width
t
CH
0.45
0.55
0.45
0.55
t
CK
26
CK low-level width
t
CL
0.45
0.55
0.45
0.55
t
CK
26
Clock cycle time
CL = 2.5
t
CK (2.5)
6
13
7.5
13
ns
41, 47
CL = 2
t
CK (2)
7.5
13
7.5
13
ns
41, 47
DQ and DM input hold time relative to DQS
t
DH
0.45
0.5
ns
23, 27
DQ and DM input setup time relative to DQS
t
DS
0.45
0.5
ns
23, 27
DQ and DM input pulse width (for each input)
t
DIPW
1.75
1.75
ns
27
Access window of DQS from CK/CK#
t
DQSCK
-0.60
+0.60
-0.75
+0.75
ns
DQS input high pulse width
t
DQSH
0.35
0.35
t
CK
DQS input low pulse width
t
DQSL
0.35
0.35
t
CK
DQS-DQ skew, DQS to last DQ valid, per group, per access
t
DQSQ
0.45
0.5
ns
22, 27
Write command to first DQS latching transition
t
DQSS
0.75
1.25
0.75
1.25
t
CK
DQS falling edge to CK rising - setup time
t
DSS
0.2
0.2
t
CK
DQS falling edge from CK rising - hold time
t
DSH
0.2
0.2
t
CK
Half clock period
t
HP
t
CH,
t
CL
t
CH,
t
CL
ns
30
Data-out high-impedance window from CK/CK#
t
HZ
+0.70
+0.75
ns
16, 38
Data-out low-impedance window from CK/CK#
t
LZ
-0.70
-0.75
ns
16, 39
Address and control input hold time (fast slew rate)
t
IH
F
0.75
0.90
ns
12
Address and control input setup time (fast slew rate)
t
IS
F
0.75
0.90
ns
12
Address and control input hold time (slow slew rate)
t
IH
S
0.80
1
ns
12
Address and control input setup time (slow slew rate)
t
IS
S
0.80
1
ns
12
Address and Control input pulse width (for each input)
t
IPW
2.2
2.2
ns
LOAD MODE REGISTER command cycle time
t
MRD
12
15
ns
DQ-DQS hold, DQS to first DQ to go non-valid, per access
t
QH
t
HP -
t
QHS
t
HP -
t
QHS
ns
22, 23
Data hold skew factor
t
QHS
0.55
0.75
ns
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
17
2003 Micron Technology, Inc.
ACTIVE to PRECHARGE command
t
RAS
42
70,000
40
120,000
ns
31
ACTIVE to READ with Auto precharge command
t
RAP
18
15
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
t
RC
60
60
ns
AUTO REFRESH command period
t
RFC
72
70
ns
45
ACTIVE to READ or WRITE delay
t
RCD
18
15
ns
PRECHARGE command period
t
RP
18
15
ns
DQS read preamble
t
RPRE
0.9
1.1
0.9
1.1
t
CK
38
DQS read postamble
t
RPST
0.4
0.6
0.4
0.6
t
CK
ACTIVE bank a to ACTIVE bank b command
t
RRD
12
15
ns
DQS write preamble
t
WPRE
0.25
0.25
t
CK
DQS write preamble setup time
t
WPRES
0
0
ns
18, 19
DQS write postamble
t
WPST
0.4
0.6
0.4
0.6
t
CK
17
Write recovery time
t
WR
15
15
ns
Internal WRITE to READ command delay
t
WTR
1
1
t
CK
Data valid output window
na
t
QH -
t
DQSQ
t
QH -
t
DQSQ
ns
22
REFRESH to REFRESH command interval
64MB
t
REFC
140.6
140.6
s
21
128MB, 256MB
70.3
70.3
s
21
Average periodic refresh interval
64MB
t
REFI
15.6
15.6
s
21
128MB, 256MB
7.8
7.8
s
21
Terminating voltage delay to V
DD
t
VTD
0
0
ns
Exit SELF REFRESH to non-READ command
t
XSNR
75
75
ns
Exit SELF REFRESH to READ command
t
XSRD
200
200
t
CK
Table 16: Electrical Characteristics and Recommended AC Operating Conditions
(-335 and -262 Speed Grades) (Continued)
Notes: 15, 1215, 29, 49; notes appear on pages 2023; 0
C T
A
+70C; V
DD
= V
DD
Q = +2.5V 0.2V
AC CHARACTERISTICS
-335
-262
UNITS
NOTES
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
18
2003 Micron Technology, Inc.
Table 17: Electrical Characteristics and Recommended AC Operating Conditions
(-26A, -265, and -202 Speed Grades)
Notes: 15, 8, 1215, 29, 31, 49; notes appear on pages 2023; 0
C T
A
+70C; V
DD
= V
DD
Q = +2.5V 0.2V
AC CHARACTERISTICS
-26A/265
-202
UNITS
NOTES
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
Access window of DQ from CK/CK#
t
AC
-0.75
+0.75
-0.8
+0.8
ns
CK high-level width
t
CH
0.45
0.55
0.45
0.55
t
CK
26
CK low-level width
t
CL
0.45
0.55
0.45
0.55
t
CK
26
Clock cycle time
CL = 2.5
t
CK (2.5)
7.5
13
8
13
ns
41, 47
CL = 2
t
CK (2)
7.5
13
10
13
ns
41, 47
DQ and DM input hold time relative to DQS
t
DH
0.5
0.6
ns
23, 27
DQ and DM input setup time relative to DQS
t
DS
0.5
0.6
ns
23, 27
DQ and DM input pulse width (for each input)
t
DIPW
1.75
2
ns
27
Access window of DQS from CK/CK#
t
DQSCK
-0.75
+0.75
-0.8
+0.8
ns
DQS input high pulse width
t
DQSH
0.35
0.35
t
CK
DQS input low pulse width
t
DQSL
0.35
0.35
t
CK
DQS-DQ skew, DQS to last DQ valid, per group, per access
t
DQSQ
0.5
0.6
ns
22, 25
Write command to first DQS latching transition
t
DQSS
0.75
1.25
0.75
1.25
t
CK
DQS falling edge to CK rising - setup time
t
DSS
0.2
0.2
t
CK
DQS falling edge from CK rising - hold time
t
DSH
0.2
0.2
t
CK
Half clock period
t
HP
t
CH,
t
CL
t
CH,
t
CL
ns
30
Data-out high-impedance window from CK/CK#
t
HZ
+0.75
+0.8
ns
16, 38
Data-out low-impedance window from CK/CK#
t
LZ
-0.75
-0.8
ns
16, 39
Address and control input hold time (fast slew rate)
t
IH
F
0.90
1.1
ns
12
Address and control input setup time (fast slew rate)
t
IS
F
0.90
1.1
ns
12
Address and control input hold time (slow slew rate)
t
IH
S
1
1.1
ns
12
Address and control input setup time (slow slew rate)
t
IS
S
1
1.1
ns
12
Address and Control input pulse width (for each input)
t
IPW
2.2
2.2
ns
LOAD MODE REGISTER command cycle time
t
MRD
15
16
ns
DQ-DQS hold, DQS to first DQ to go non-valid, per access
t
QH
t
HP -
t
QHS
t
HP-
t
QHS
ns
22, 23
Data hold skew factor
t
QHS
0.75
1
ns
ACTIVE to PRECHARGE command
t
RAS
40
120,000
40
120,000
ns
31
ACTIVE to READ with Auto precharge command
t
RAP
20
20
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
t
RC
65
70
ns
AUTO REFRESH command period
t
RFC
75
80
ns
45
ACTIVE to READ or WRITE delay
t
RCD
20
20
ns
PRECHARGE command period
t
RP
20
20
ns
DQS read preamble
t
RPRE
0.9
1.1
0.9
1.1
t
CK
38
DQS read postamble
t
RPST
0.4
0.6
0.4
0.6
t
CK
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
19
2003 Micron Technology, Inc.
ACTIVE bank a to ACTIVE bank b command
t
RRD
15
15
ns
DQS write preamble
t
WPRE
0.25
0.25
t
CK
DQS write preamble setup time
t
WPRES
0
0
ns
18, 19
DQS write postamble
t
WPST
0.4
0.6
0.4
0.6
t
CK
17
Write recovery time
t
WR
15
15
ns
Internal WRITE to READ command delay
t
WTR
1
1
t
CK
Data valid output window
na
t
QH -
t
DQSQ
t
QH -
t
DQSQ
ns
22
REFRESH to REFRESH command interval
64MB
t
REFC
140.6
140.6
s
21
128MB, 256MB
70.3
70.3
s
21
Average periodic refresh interval
64MB
t
REFI
15.6
15.6
s
21
128MB, 256MB
7.8
7.8
s
21
Terminating voltage delay to V
DD
t
VTD
0
ns
Exit SELF REFRESH to non-READ command
t
XSNR
75
ns
Exit SELF REFRESH to READ command
t
XSRD
200
t
CK
Table 17: Electrical Characteristics and Recommended AC Operating Conditions
(-26A, -265, and -202 Speed Grades) (Continued)
Notes: 15, 8, 1215, 29, 31, 49; notes appear on pages 2023; 0
C T
A
+70C; V
DD
= V
DD
Q = +2.5V 0.2V
AC CHARACTERISTICS
-26A/265
-202
UNITS
NOTES
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
20
2003 Micron Technology, Inc.
Notes
1. All voltages referenced to V
SS
.
2. Tests for AC timing, I
DD
, and electrical AC and DC
characteristics may be conducted at nominal ref-
erence/supply voltage levels, but the related spec-
ifications and device operation are guaranteed for
the full voltage range specified.
3. Outputs measured with equivalent load:
4. AC timing and I
DD
tests may use a V
IL
-to-V
IH
swing of up to 1.5V in the test environment, but
input timing is still referenced to V
REF
(or to the
crossing point for CK/CK#), and parameter speci-
fications are guaranteed for the specified AC input
levels under normal use conditions. The mini-
mum slew rate for the input signals used to test
the device is 1V/ns in the range between V
IL
(
AC
)
and V
IH
(
AC
).
5. The AC and DC input level specifications are as
defined in the SSTL_2 Standard (i.e., the receiver
will effectively switch as a result of the signal
crossing the AC input level, and will remain in that
state as long as the signal does not ring back
above [below] the DC input LOW [HIGH] level).
6. V
REF
is expected to equal V
DD
Q/2 of the transmit-
ting device and to track variations in the DC level
of the same. Peak-to-peak noise (non-common
mode) on V
REF
may not exceed 2 percent of the
DC value. Thus, from V
DD
Q/2, V
REF
is allowed
25mV for DC error and an additional 25mV for
AC noise. This measurement is to be taken at the
nearest V
REF
by-pass capacitor.
7. V
TT
is not applied directly to the device. V
TT
is a
system supply for signal termination resistors, is
expected to be set equal to V
REF
and must track
variations in the DC level of V
REF
.
8. I
DD
is dependent on output loading and cycle
rates. Specified values are obtained with mini-
mum cycle time at CL = 2 for -262, -26A, and -202,
CL = 2.5 for -265 and -335 with the outputs open.
9. Enables on-chip refresh and address counters.
10. I
DD
specifications are tested after the device is
properly initialized, and is averaged at the defined
cycle rate.
11. This parameter is sampled. V
DD
= +2.5V 0.2V,
V
DD
Q = +2.5V 0.2V, V
REF
= V
SS
, f = 100 MHz, T
A
=
25C, V
OUT
(DC) = V
DD
Q/2, V
OUT
(peak to peak) =
0.2V. DM input is grouped with I/O pins, reflecting
the fact that they are matched in loading.
12. For slew rates < 1 V/ns and
0.5 V/ns. If slew rate
is < 0.5 V/ns, timing must be derated:
t
IS has an
additional 50ps per each 100 mV/ns reduction in
slew rate from 500 mV/ns, while
t
IH is unaffected.
If slew rate exceeds 4.5 V/ns, functionality is
uncertain.
13. The CK/CK# input reference level (for timing ref-
erenced to CK/CK#) is the point at which CK and
CK# cross; the input reference level for signals
other than CK/CK# is V
REF
.
14. Inputs are not recognized as valid until V
REF
stabi-
lizes. Exception: during the period before V
REF
stabilizes, CKE
0.3 x V
DD
Q is recognized as LOW.
15. The output timing reference level, as measured at
the timing reference point indicated in Note 3, is
V
TT
.
16.
t
HZ and
t
LZ transitions occur in the same access
time windows as data valid transitions. These
parameters are not referenced to a specific voltage
level, but specify when the device output is no
longer driving (HZ) or begins driving (LZ).
17. The intent of the Don't Care state after completion
of the postamble is the DQS-driven signal should
either be high, low, or high-Z and that any signal
transition within the input switching region must
follow valid input requirements. That is, if DQS
transitions high [above V
IHDC
(MIN)] then it must
not transition low (below V
IHDC
) prior to
t
DQSH
(MIN).
18. This is not a device limit. The device will operate
with a negative value, but system performance
could be degraded due to bus turnaround.
19. It is recommended that DQS be valid (HIGH or
LOW) on or before the WRITE command. The
case shown (DQS going from High-Z to logic
LOW) applies when no WRITEs were previously in
progress on the bus. If a previous WRITE was in
progress, DQS could be HIGH during this time,
depending on
t
DQSS.
20. MIN (
t
RC or
t
RFC) for I
DD
measurements is the
smallest multiple of
t
CK that meets the minimum
absolute value for the respective parameter.
t
RAS
(MAX) for I
DD
measurements is the largest multi-
ple of
t
CK that meets the maximum absolute
value for
t
RAS.
Output
(V
OUT
)
Reference
Point
50
V
TT
30pF
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
21
2003 Micron Technology, Inc.
21. The refresh period 64ms. This equates to an aver-
age refresh rate of 15.625s (64MB) or 7.8125s
(128MB). However, an AUTO REFRESH command
must be as-serted at least once every 140.6s (64MB)
or 70.3s (128MB); burst refreshing or posting by
the DRAM controller greater than eight refresh
cycles is not allowed.
22. The valid data window is derived by achieving
other specifications:
t
HP (
t
CK/2),
t
DQSQ, and
t
QH
(
t
QH =
t
HP -
t
QHS). The data valid window derates
directly porportional with the clock duty cycle
and a practical data valid window can be derived.
The clock is allowed a maximum duty cycle varia-
tion of 45/55, beyond which functionality is
uncertain. Figure 7, Derating Data Valid Window,
shows duty cycles between 50/50 and 45/55.
23. Each byte lane has a corresponding DQS.
24. This limit is actually a nominal value and does not
result in a fail value. CKE is HIGH during
REFRESH command period (
t
RFC [MIN]) else
CKE is LOW (i.e., during standby).
25. To maintain a valid level, the transitioning edge of
the input must:
a. Sustain a constant slew rate from the current
AC level through to the target AC level, V
IL
(
AC
)
or V
IH
(
AC
).
b. Reach at least the target AC level.
c. After the AC target level is reached, continue to
maintain at least the target DC level, V
IL
(
DC
) or
V
IH
(
DC
).
26. JEDEC specifies CK and CK# input slew rate must
be
1V/ns (2V/ns differentially).
27. DQ and DM input slew rates must not deviate
from DQS by more than 10 percent. If the DQ/
DM/DQS slew rate is less than 0.5V/ns, timing
must be derated: 50ps must be added to
t
DS and
t
DH for each 100mv/ns reduction in slew rate. If
slew rate exceeds 4V/ns, functionality is uncer-
tain.
28. V
DD
must not vary more than 4 percent if CKE is
not active while any bank is active.
Figure 7: Derating Data Valid Window
(
t
QH
t
DQSQ)
3.750
3.700
3.650
3.600
3.550
3.500
3.450
3.400
3.350
3.300
3.250
3.400
3.350
3.300
3.250
3.200
3.150
3.100
3.050
3.000
2.950
2.900
2.500
2.463
2.425
2.388
2.350
2.313
2.275
2.238
2.200
2.163
2.125
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
50/50
49.5/50.5 49/51
48.5/52.5
48/52
47.5/53.5
47/53
46.5/54.5
46/54
45.5/55.5
45/55
Clock Duty Cycle
ns
-26A/-265 @
t
CK = 10ns
-202 @
t
CK = 10ns
-26A/-265 @
t
CK = 7.5ns
-202 @
t
CK = 8ns
-335 @
t
CK = 6ns
N/A
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
22
2003 Micron Technology, Inc.
29. The clock is allowed up to 150ps of jitter. Each
timing parameter is allowed to vary by the same
amount.
30.
t
HP min is the lesser of
t
CL minimum and
t
CH
minimum actually applied to the device CK and
CK/ inputs, collectively during bank active.
31. READs and WRITEs with auto precharge are not
allowed to be issued until
t
RAS(MIN) can be satis-
fied prior to the internal precharge command
being issued.
32. Any positive glitch in the nominal voltage must be
less than 1/3 of the clock and not more than
+400mV or 2.9V maximum, whichever is less. Any
negative glitch must be less than 1/3 of the clock
cycle and not exceed either -300mV or 2.2V mini-
mum, whichever is more positive.
33. Normal Output Drive Curves:
a. The full variation in driver pull-down current
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 8,
Normal Output Drive Curve
Pull-Down Characteristics.
b. The variation in driver pull-down current
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie
within the inner bounding lines of the V-I
curve of Figure 8, Normal Output Drive Curve
Pull-Down Characteristics.
c. The full variation in driver pull-up current
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 9,
Normal Output Drive Curve Pull-Up Charac-
teristics.
d. The variation in driver pull-up current within
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of Figure
9, Normal Output Drive Curve Pull-Up Charac-
teristics.
e. The full variation in the ratio of the maximum
to minimum pull-up and pull-down current
should be between 0.71 and 1.4, for device
drain-to-source voltages from 0.1V to 1.0V, and
at the same voltage and temperature.
f. The full variation in the ratio of the nominal
pull-up to pull-down current should be unity
10 percent, for device drain-to-source volt-
ages from 0.1V to 1.0V.
34. Reduced Output Drive Curves:
a. The full variation in driver pull-down current
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 10,
Reduced Output Drive Curve Pull-Down Char-
acteristics, on page 23.
b. The variation in driver pull-down current within
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of
Figure 10, Reduced Output Drive Curve Pull-
Down Characteristics, on page 23.
c. The full variation in driver pull-up current from
minimum to maximum process, temperature
and voltage will lie within the outer bounding
lines of the V-I curve of Figure 11, Reduced Out-
put Drive Curve Pull-Up Characteristics, on
page 23.
d. The variation in driver pull-up current within
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of
Figure 11, Reduced Output Drive Curve Pull-Up
Characteristics, on page 23.
e. The full variation in the ratio of the maximum to
minimum pull-up and pull-down current
should be between 0.71 and 1.4, for device
drain-to-source voltages from 0.1V to 1.0V, and
at the same voltage.
f. The full variation in the ratio of the nominal
pull-up to pull-down current should be unity
10 percent, for device drain-to-source voltages
from 0.1V to 1.0V.
35. The voltage levels used are derived from a mini-
mum V
DD
level and the referenced test load. In
practice, the voltage levels obtained from a prop-
erly terminated bus will provide significantly dif-
ferent voltage values.
36. V
IH
overshoot: V
IH
(MAX) = V
DD
Q + 1.5V for a
pulse width
3ns and the pulse width can not be
greater than 1/3 of the cycle rate. V
IL
undershoot:
V
IL
(MIN) = -1.5V for a pulse width
3ns and the
pulse width can not be greater than 1/3 of the
cycle rate.
37. V
DD
and V
DD
Q must track each other.
38. This maximum value is derived from the refer-
enced test load. In practice, the values obtained
in a typical terminated design may reflect up to
310ps less for
t
HZ (MAX) and the last DVW.
t
HZ
(MAX) will prevail over
t
DQSCK (MAX) +
t
RPST
(MAX) condition.
t
LZ (MIN) will prevail over
t
DQSCK (MIN) +
t
RPRE (MAX) condition.
39. For slew rates greater than 1V/ns the (LZ) transi-
tion will start about 310ps earlier.
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
23
2003 Micron Technology, Inc.
Figure 8: Normal Output Drive Curve
Pull-Down Characteristics
Figure 9: Normal Output Drive Curve
Pull-Up Characteristics
Figure 10: Reduced Output Drive Curve
Pull-Down Characteristics
Figure 11: Reduced Output Drive Curve
Pull-Up Characteristics
40. During initialization, V
DD
Q, V
TT
, and V
REF
must
be equal to or less than V
DD
+ 0.3V. Alternatively,
V
TT
may be 1.35V maximum during power up,
even if V
DD
/V
DD
Q are 0V, provided a minimum of
42
W of series resistance is used between the V
TT
supply and the input pin.
41. The current Micron part operates below the slow-
est JEDEC operating frequency of 83 MHz. As
such, future die may not reflect this option.
42. For -335, -262, -26A, and -265 speed grades, Idd3N
is specified to be 35mA per DDR SDRAM device at
100 MHz.
43. Random addressing changing and 50 percent of
data changing at every transfer.
44. Random addressing changing and 100 percent of
data changing at every transfer.
45. CKE must be active (high) during the entire time a
refresh command is executed. That is, from the
time the AUTO REFRESH command is registered,
CKE must be active at each rising clock edge, until
t
REF later.
46. I
DD
2N specifies the DQ, DQS, and DM to be
driven to a valid high or low logic level. I
DD
2Q is
similar to I
DD
2F except I
DD
2Q specifies the
address and control inputs to remain stable.
Although I
DD
2F, I
DD
2N, and I
DD
2Q are similar,
I
DD
2F is "worst case."
47. Whenever the operating frequency is altered, not
including jitter, the DLL is required to be reset.
This is followed by 200 clock cycles (before READ
commands).
48. Leakage number reflects the worst case leakage
possible through the module pin, not what each
memory device contributes.
49. When an input signal is HIGH or LOW, it is
defined as a steady state logic HIGH or LOW.
160
140
I
OUT
(mA)
V
OUT
(V)
Nominal low
Minimum
Nominal high
Maximum
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
V
OUT
(V)
0
-20
I
OUT
(mA)
Nominal low
Minimum
Nominal high
Maximum
-40
-60
-80
-100
-120
-140
-160
-180
-200
0.0
0.5
1.0
1.5
2.0
2.5
V
DD
Q - V
OUT
(V)
0
10
20
30
40
50
60
70
80
0.0
0.5
1.0
1.5
2.0
2.5
V
OUT
(V)
I
OUT
(mA)
Nominal low
Minimum
Nominal high
Maximum
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
DD
Q - V
OUT
(V)
I
OUT
(mA)
Nominal low
Minimum
Nominal high
Maxim
um
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
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2003 Micron Technology, Inc.
SPD Clock and Data Conventions
Data states on the SDA line can change only during
SCL LOW. SDA state changes during SCL HIGH are
reserved for indicating start and stop conditions (as
shown in Figure 12, Data Validity, and Figure 13, Defi-
nition of Start and Stop).
SPD Start Condition
All commands are preceded by the start condition,
which is a HIGH-to-LOW transition of SDA when SCL
is HIGH. The SPD device continuously monitors the
SDA and SCL lines for the start condition and will not
respond to any command until this condition has been
met.
SPD Stop Condition
All communications are terminated by a stop condi-
tion, which is a LOW-to-HIGH transition of SDA when
SCL is HIGH. The stop condition is also used to place
the SPD device into standby power mode.
SPD Acknowledge
Acknowledge is a software convention used to indi-
cate successful data transfers. The transmitting device,
either master or slave, will release the bus after trans-
mitting eight bits. During the ninth clock cycle, the
receiver will pull the SDA line LOW to acknowledge
that it received the eight bits of data (as shown in Fig-
ure 14, Acknowledge Response From Receiver).
The SPD device will always respond with an
acknowledge after recognition of a start condition and
its slave address. If both the device and a WRITE oper-
ation have been selected, the SPD device will respond
with an acknowledge after the receipt of each subse-
quent eight-bit word. In the read mode the SPD device
will transmit eight bits of data, release the SDA line and
monitor the line for an acknowledge. If an acknowl-
edge is detected and no stop condition is generated by
the master, the slave will continue to transmit data. If
an acknowledge is not detected, the slave will termi-
nate further data transmissions and await the stop
condition to return to standby power mode.
Figure 12: Data Validity
Figure 13: Definition of Start and Stop
Figure 14: Acknowledge Response From Receiver
SCL
SDA
DATA STABLE
DATA STABLE
DATA
CHANGE
SCL
SDA
START
BIT
STOP
BIT
SCL from Master
Data Output
from Transmitter
Data Output
from Receiver
9
8
Acknowledge
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
25
2003 Micron Technology, Inc.
Figure 15: SPD EEPROM Timing Diagram
Table 18: EEPROM Device Select Code
Most significant bit (b7) is sent first
SELECT CODE
DEVICE TYPE IDENTIFIER
CHIP ENABLE
RW
b7
b6
b5
b4
b3
b2
b1
b0
Memory Area Select Code (two arrays)
1
0
1
0
SA2
SA1
SA0
RW
Protection Register Select Code
0
1
1
0
SA2
SA1
SA0
RW
Table 19: EEPROM Operating Modes
MODE
RW BIT
WC
BYTES
INITIAL SEQUENCE
Current Address Read
1
V
IH
or V
IL
1
START, Device Select, RW = `1'
Random Address Read
0
V
IH
or V
IL
1
START, Device Select, RW = `0', Address
1
V
IH
or V
IL
1
reSTART, Device Select, RW = `1'
Sequential Read
1
V
IH
or V
IL
1
Similar to Current or Random Address Read
Byte Write
0
V
IL
1
START, Device Select, RW = `0'
Page Write
0
V
IL
16
START, Device Select, RW = `0'
SCL
SDA IN
SDA OUT
tLOW
tSU:STA
tHD:STA
tF
tHIGH
tR
tBUF
tDH
tAA
tSU:STO
tSU:DAT
tHD:DAT
UNDEFINED
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
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DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
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2003 Micron Technology, Inc.
NOTE:
1. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL = 1 and the falling or rising
edge of SDA.
2. This parameter is sampled.
3. For a reSTART condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write sequence to the end of
the EEPROM internal erase/program cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA
remains HIGH due to pull-up resistor, and the EEPROM does not respond to its slave address.
Table 20: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
SS
; V
DDSPD
= +2.3V to +3.6V
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
SUPPLY VOLTAGE
V
DDSPD
2.3
3.6
V
INPUT HIGH VOLTAGE: Logic 1; All inputs
V
IH
V
DD
X
0.7
V
DD
+ 0.5
V
INPUT LOW VOLTAGE: Logic 0; All inputs
V
IL
-1
V
DD
x 0.3
V
OUTPUT LOW VOLTAGE: I
OUT
= 3mA
V
OL
0.4
V
INPUT LEAKAGE CURRENT: V
IN
= GND to V
DD
I
LI
10
A
OUTPUT LEAKAGE CURRENT: V
OUT
= GND to V
DD
I
LO
10
A
STANDBY CURRENT:
SCL = SDA = V
DD
- 0.3V; All other inputs = V
SS
or V
DD
I
SB
30
A
POWER SUPPLY CURRENT: SCL clock frequency = 100 KHz
I
CC
2
mA
Table 21: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
SS
; V
DDSPD
= +2.3V to +3.6V
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
SCL LOW to SDA data-out valid
t
AA
0.2
0.9
s
1
Time the bus must be free before a new transition can start
t
BUF
1.3
s
Data-out hold time
t
DH
200
ns
SDA and SCL fall time
t
F
300
ns
2
Data-in hold time
t
HD:DAT
0
s
Start condition hold time
t
HD:STA
0.6
s
Clock HIGH period
t
HIGH
0.6
s
Noise suppression time constant at SCL, SDA inputs
t
I
50
ns
Clock LOW period
t
LOW
1.3
s
SDA and SCL rise time
t
R
0.3
s
2
SCL clock frequency
f
SCL
400
KHz
Data-in setup time
t
SU:DAT
100
ns
Start condition setup time
t
SU:STA
0.6
s
3
Stop condition setup time
t
SU:STO
0.6
s
WRITE cycle time
t
WRC
10
ms
4
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
27
2003 Micron Technology, Inc.
Table 22: Serial Presence-Detect Matrix
"1"/"0": Serial Data, "driven to HIGH"/"driven to LOW"
BYTE
DESCRIPTION
ENTRY (VERSION)
MT4VDDT864W MT4VDDT1664W MT4VDDT3264W
0
Number of SPD Bytes Used by Micron
128
80
80
80
1
Total Number of Bytes in SPD Device
256
08
08
08
2
Fundamental Memory Type
SDRAM DDR
07
07
07
3
Number of Row Addresses on Assembly
11 or 12
0C
0D
0D
4
Number of Column Addresses on
Assembly
9 or 10
09
09
0A
5
Number of Physical Ranks on DIMM
1
01
01
01
6
Module Data Width
64
40
40
40
7
Module Data Width (Continued)
0
00
00
00
8
Module Voltage Interface Levels
SSTL 2.5V
04
04
04
9
SDRAM Cycle Time,
t
CK (CAS Latency =
2.5) (See note 1)
6ns (-335)
7ns (-262/-26A)
7.5ns (-265)
8ns (-202)
60
70
75
80
60
70
75
80
60
70
75
80
10
SDRAM Access from Clock,
t
AC (CAS
Latency = 2.5)
0.7ns (-335)
0.75ns (-262/-26A/-265)
0.8ns (-202)
70
75
80
70
75
80
70
75
80
11
Module Configuration Type
Non-ECC
00
00
00
12
Refresh Rate/type
15.62s, 7.8s/SELF
80
82
82
13
SDRAM Device Width (Primary DDR
SDRAM)
16
10
10
10
14
Error-checking DDR SDRAM Data
Width
No ECC
00
00
00
15
Minimum Clock Delay, Back-to-Back
Random Column Access
1 clock
01
01
01
16
Burst Lengths Supported
2, 4, 8
0E
0E
0E
17
Number of Banks on DDR SDRAM
Device
4
04
04
04
18
CAS Latencies Supported
2, 2.5
0C
0C
0C
19
CS Latency
0
01
01
01
20
WE Latency
1
02
02
02
21
SDRAM Module Attributes
Unbuffered/Diff.
Clock
20
20
20
22
SDRAM Device Attributes: General
Fast/Concurrent AP
C1
C1
C1
23
SDRAM Cycle Time,
t
CK (CAS Latency =
2) (See note 1)
7.5ns (-335/-262/-26A)
10ns (-265/-202)
75
A0
75
A0
75
A0
24
SDRAM Access from CK,
t
AC (CAS
Latency = 2)
0.7ns (-335)
0.75ns (-262/-26A/-265)
0.8ns (-202)
70
75
80
70
75
80
70
75
80
25
SDRAM Cycle Time,
t
CK (CAS Latency =
1.5)
N/A
00
00
00
26
SDRAM Access from CK ,
t
AC (CAS
Latency = 1.5)
N/A
00
00
00
27
Minimum Row Precharge Time,
t
RP
18ns (-335)
15ns (-262)
20ns (-26A/-265/-202)
48
3C
50
48
3C
50
48
3C
50
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
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2003 Micron Technology, Inc.
28
Minimum Row Active to Row Active,
t
RRD
12ns (-335)
15ns (-262/-26A/-265/-202)
30
3C
30
3C
30
3C
29
Minimum RAS# to CAS# Delay,
t
RCD
18ns (-335)
15ns (-262)
20ns (-265/-26A/-202)
48
3C
50
48
3C
50
48
3C
50
30
Minimum RAS# Pulse Width,
t
RAS
(See note 2)
42ns (-335)
45ns (-262/-26A/-265)
40ns (-202)
2A
2D
28
2A
2D
28
2A
2D
28
31
Module Rank Density
64MB, 128MB, 256MB
10
20
20
32
Address and Command Setup Time,
t
IS,
Value Set to Slow Slew Rate,
t
IS
s
(See
note 3)
0.8ns (-335)
1.0ns (-262/-26A/-265)
1.1ns (-202)
80
A0
B0
80
A0
B0
80
A0
B0
33
Address and Command Hold Time,
t
IH,
Value Set to Slow Slew Rate,
t
IH
s
, (See
note 3)
0.8ns (-335)
1.0ns (-262/-26A/-265)
1.1ns (-202)
80
A0
B0
80
A0
B0
80
A0
B0
34
Data/Data Mask Input Setup Time,
t
DS
0.45ns (-335)
0.5ns (-262/-26A/-265)
0.6ns (-202)
45
50
60
45
50
60
45
50
60
35
Data/Data Mask Input Hold Time,
t
DH
0.45ns (-335)
0.5ns (-262/-26A/-265)
0.6ns (-202)
45
50
60
45
50
60
45
50
60
36-40 Reserved
00
00
00
41
Min Active Auto Refresh Time,
t
RC
60ns (-335/-262)
65ns (-26A/-265)
70ns (-202)
3C
41
46
3C
41
46
3C
41
46
42
Minimum Auto Refresh to Active/
Auto Refresh Command Period,
t
RFC
72ns (-335)
75ns (-262/-26A/-265)
80ns (-202)
48
4B
50
48
4B
50
48
4B
50
43
SDRAM Device Max Cycle Time,
t
CK
MAX
12ns (-335)
13ns (-262/-26A/-265/-202)
30
34
30
34
30
34
44
SDRAM Device Max DQS-DQ Skew
Time
t
DQSQ
0.45ns (-335)
0.5ns (-262/-26A/-265)
0.6ns (-202)
2D
32
3C
2D
32
3C
2D
32
3C
45
SDRAM Device Max Read Data Hold
Skew Factor
t
QHS
0.55ns (-335)
0.75ns (-262/-26A/-265)
1.0ns (-202)
55
75
A0
55
75
A0
55
75
A0
46
Reserved
00
00
00
47
DIMM Height
01
01
01
48-61 Reserved
00
00
00
62
SPD Revision
Release 1.0
10
10
10
63
Checksum For Bytes 0-62
-335
-262
-26A
-265
-202
FC
CF
FC
EC
C7
0F
A2
CF
FF
9A
30
C3
F0
20
BB
64
Manufacturer's JEDEC ID Code
MICRON
2C
2C
2C
65-71 Manufacturer's JEDEC ID Code
(Continued)
FF
FF
FF
72
Manufacturing Location
0112
010C
010C
010C
Table 22: Serial Presence-Detect Matrix (Continued)
"1"/"0": Serial Data, "driven to HIGH"/"driven to LOW"
BYTE
DESCRIPTION
ENTRY (VERSION)
MT4VDDT864W MT4VDDT1664W MT4VDDT3264W
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
29
2003 Micron Technology, Inc.
NOTE:
1. Device latencies used for SPD values.
2. The value of
t
RAS used for -26A/-265 modules is calculated from
t
RC -
t
RP. Actual device spec value is 40 ns.
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is
represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini-
mum slew rate is met.
73-90 Module Part Number (ASCII)
Variable Data
Variable Data
Variable Data
91
PCB Identification Code
1-9
01-09
01-09
01-09
92
Identification Code (Continued)
0
00
00
00
93
Year of Manufacture in BCD
Variable Data
Variable Data
Variable Data
94
Week of Manufacture in BCD
Variable Data
Variable Data
Variable Data
95-98 Module Serial Number
Variable Data
Variable Data
Variable Data
99-127 Manufacturer- Specific Data (RSVD)
Table 22: Serial Presence-Detect Matrix (Continued)
"1"/"0": Serial Data, "driven to HIGH"/"driven to LOW"
BYTE
DESCRIPTION
ENTRY (VERSION)
MT4VDDT864W MT4VDDT1664W MT4VDDT3264W
64MB, 128MB, 256MB (x64)
172-PIN DDR SDRAM MICRODIMM
09005aef80d7157a
Micron Technology, Inc., reserves the right to change products or specifications without notice..
DD4C8_16x64WG_B.fm - Rev. B 8/03 EN
30
2003 Micron Technology, Inc
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
Figure 16: 172-Pin MicroDIMM Dimensions
Data Sheet Designation
Released (No Mark): This data sheet contains mini-
mum and maximum limits specified over the complete
power supply and temperature range for production
devices. Although considered final, these specifica-
tions are subject to change, as further product devel-
opment and data characterization sometimes occur.
U1
U2
U4
U3
Front View
Back View
U5
0.150 (3.80)
MAX
0.035 (0.88)
0.029 (0.74)
PIN 1
1.793 (45.54)
1.789 (45.44)
0.039 (1.0)
TYP
0.020 (0.50)
TYP
0.015 (0.37)
TYP
PIN 171
PIN 172
PIN 2
1.67 (42.5)
1.183 (30.05)
1.179 (29.95)
0.591 (15.0)
TYP
0.039 (1.0) R
(5X)
TYP