Document Outline
- Features/Options
- General Description
- Functional Block Diagram 128K x 18
- Functional Block Diagram 64K x 32/36
- General Description (continued)
- TQFP Pin Assignment Table
- Pin Assignment (Top View) 100-Pin TQFP
- TQFP Pin Descriptions
- TQFP Pin Descriptions (continued)
- Interleaved Burst Address Table (Mode = NC or HIGH)
- Linear Burst Address Table (Mode = LOW)
- Partial Truth Table for WRITE Commands (x18)
- Partial Truth Table for WRITE Commands (x32/x36)
- Truth Table
- Absolute Maximum Ratings
- 3.3V I/O DC Electrical Characteristics and Operating Conditions
- 2.5V I/O DC Electrical Characteristics and Operating Conditions
- IDD Operating Conditions and Maximum Limits
- TQFP Capacitance
- TQFP Thermal Resistance
- Electrical Characteristics and Recommended AC Operating Conditions
- 3.3V I/O AC Test Conditions
- 2.5V I/O AC Test Conditions
- 3.3V I/O Output Load Equivalents
- 2.5V I/O Output Load Equivalents
- Load Derating Curves
- SNOOZE MODE
- SNOOZE MODE Electrical Characteristics
- SNOOZE MODE Waveform
- READ Timing
- WRITE Timing
- READ/WRITE Timing
- 100-Pin Plastic TQFP (JEDEC LQFP)
- Revision History
1
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
2002, Micron Technology, Inc.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
2Mb SYNCBURST
TM
SRAM
FEATURES
Fast clock and OE# access times
Single +3.3V +0.3V/-0.165V power supply (V
DD
)
Separate +3.3V or +2.5V isolated output buffer
supply (V
DD
Q)
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Individual BYTE WRITE control and GLOBAL
WRITE
Three chip enables for simple depth expansion and
address pipelining
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed WRITE cycle
Burst control pin (interleaved or linear burst)
Automatic power-down
100-pin TQFP package
Low capacitive bus loading
x18, x32, and x36 versions available
OPTIONS
MARKING
Timing (Access/Cycle/MHz)
6.8ns/8.0ns/125 MHz
-6.8
7.5ns/8.8ns/113 MHz
-7.5
8.5ns/10ns/100 MHz
-8.5
10ns/15ns/66 MHz
-10
Configurations
3.3V I/O
128K x 18
MT58L128L18F
64K x 32
MT58L64L32F
64K x 36
MT58L64L36F
2.5V I/O
128K x 18
MT58L128V18F
64K x 32
MT58L64V32F
64K x 36
MT58L64V36F
Packages
100-pin TQFP
T
Operating Temperature Range
Commercial (0C to +70C)
None
Part Number Example:
MT58L64L36FT-8.5
MT58L128L18F, MT58L64L32F,
MT58L64L36F; MT58L128V18F,
MT58L64V32F, MT58L64V36F
3.3V V
DD
, 3.3V or 2.5V I/O, Flow-Through
GENERAL DESCRIPTION
The Micron
SyncBurst
TM
SRAM family employs
high-speed, low-power CMOS designs that are fabri-
cated using an advanced CMOS process.
Micron's 2Mb SyncBurst SRAMs integrate a 128K x
18, 64K x 32, or 64K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single clock
input (CLK). The synchronous inputs include all ad-
dresses, all data inputs, active LOW chip enable (CE#),
two additional chip enables for easy depth expansion
(CE2, CE2#), burst control inputs (ADSC#, ADSP#,
ADV#), byte write enables (BWx#) and global write
(GW#).
Asynchronous inputs include the output enable
(OE#), snooze enable (ZZ) and clock (CLK). There is also
a burst mode pin (MODE) that selects between inter-
leaved and linear burst modes. The data-out (Q), en-
abled by OE#, is also asynchronous. WRITE cycles can
be from one to two bytes wide (x18) or from one to four
bytes wide (x32/x36), as controlled by the write control
inputs.
Burst operation can be initiated with either address
status processor (ADSP#) or address status controller
(ADSC#) input pins. Subsequent burst addresses can be
internally generated as controlled by the burst advance
pin (ADV#).
*JEDEC-standard MS-026 BHA (LQFP).
100-Pin TQFP*
2
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
NOTE: Functional Block Diagrams illustrate simplified device operation. See truth table, pin descriptions and timing diagrams for
detailed information.
FUNCTIONAL BLOCK DIAGRAM
128K x 18
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER AND
LOGIC
CLR
Q1
Q0
ADSC#
17
17
15
17
CE#
18
ENABLE
REGISTER
18
2
OE#
SENSE
AMPS
128K x 9 x 2
MEMORY
ARRAY
ADSP#
9
9
OUTPUT
BUFFERS
INPUT
REGISTERS
9
9
18
18
2
MODE
CE2
CE2#
GW#
BWE#
SA0, SA1, SA
BWb#
BWa#
BYTE "b"
WRITE REGISTER
BYTE "a"
WRITE REGISTER
SA0'
SA1'
SA0-SA1
DQs
DQPa
DQPb
BYTE "b"
WRITE DRIVER
BYTE "a"
WRITE DRIVER
ADDRESS
REGISTER
ADV#
CLK
BINARY
COUNTER
AND LOGIC
CLR
Q1
Q0
ADSP#
ADSC#
16
16
14
16
CE#
CE2
CE2#
OE#
ENABLE
REGISTER
4
SENSE
AMPS
OUTPUT
BUFFERS
INPUT
REGISTERS
64K x 8 x 4
(x32)
64K x 9 x 4
(x36)
MEMORY
ARRAY
MODE
BWE#
GW#
BYTE "d"
WRITE REGISTER
BYTE "c"
WRITE REGISTER
BYTE "b"
WRITE REGISTER
BYTE "a"
WRITE REGISTER
DQs
DQPa
DQPb
DQPc
DQPd
BYTE "b"
WRITE DRIVER
BYTE "c"
WRITE DRIVER
BYTE "d"
WRITE DRIVER
9
9
36
36
36
36
9
9
9
9
9
9
BWd#
BWc#
SA0, SA1, SA
BWb#
BWa#
SA0'
SA1'
SA0-SA1
BYTE "a"
WRITE DRIVER
FUNCTIONAL BLOCK DIAGRAM
64K x 32/36
3
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
GENERAL DESCRIPTION (continued)
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes
to be written.
During WRITE cycles on the x18 device, BWa#
controls DQa pins and DQPa; BWb# controls DQb pins
and DQPb. During WRITE cycles on the x32 and x36
devices, BWa# controls DQa pins and DQPa; BWb#
controls DQb pins and DQPb; BWc# controls DQc pins
and DQPc; BWd# controls DQd pins and DQPd. GW#
LOW causes all bytes to be written. Parity bits are only
available on the x18 and x36 versions.
Micron's 2Mb SyncBurst SRAMs operate from a
+3.3V V
DD
power supply, and all inputs and outputs are
TTL-compatible. Users can choose either a 3.3V or 2.5V
I/O version. The device is ideally suited for 486,
Pentium
, 680X0, and PowerPC systems and systems
that benefit from a very wide data bus. The device is also
ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-wide
applications.
Please refer to Micron's Web site (
www.micron.com/
sramds
) for the latest data sheet.
TQFP PIN ASSIGNMENT TABLE
PIN #
x18
x32/x36
1
NC
NC/
DQPc
**
2
NC
DQc
3
NC
DQc
4
V
DD
Q
5
V
SS
6
NC
DQc
7
NC
DQc
8
DQb
DQc
9
DQb
DQc
10
V
SS
11
V
DD
Q
12
DQb
DQc
13
DQb
DQc
14
V
SS
15
V
DD
16
NC
17
V
SS
18
DQb
DQd
19
DQb
DQd
20
V
DD
Q
21
V
SS
22
DQb
DQd
23
DQb
DQd
24
DQPb
DQd
25
NC
DQd
PIN #
x18
x32/x36
PIN #
x18
x32/x36
PIN #
x18
x32/x36
*Pin 50 is reserved for address expansion.
**No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
76
V
SS
77
V
DD
Q
78
NC
DQb
79
NC
DQb
80
SA
NC/
DQPb
**
81
SA
82
SA
83
ADV#
84
ADSP#
85
ADSC#
86
OE#
87
BWE#
88
GW#
89
CLK
90
V
SS
91
V
DD
92
CE2#
93
BWa#
94
BWb#
95
NC
BWc#
96
NC
BWd#
97
CE2
98
CE#
99
SA
100
SA
26
V
SS
27
V
DD
Q
28
NC
DQd
29
NC
DQd
30
NC
NC/
DQPd
**
31
MODE
32
SA
33
SA
34
SA
35
SA
36
SA1
37
SA0
38
DNU
39
DNU
40
V
SS
41
V
DD
42
DNU
43
DNU
44
SA
45
SA
46
SA
47
SA
48
SA
49
SA
50
NC/
SA
*
51
NC
NC/
DQPa
**
52
NC
DQa
53
NC
DQa
54
V
DD
Q
55
V
SS
56
NC
DQa
57
NC
DQa
58
DQa
59
DQa
60
V
SS
61
V
DD
Q
62
DQa
63
DQa
64
ZZ
65
V
DD
66
NC
67
V
SS
68
DQa
DQb
69
DQa
DQb
70
V
DD
Q
71
V
SS
72
DQa
DQb
73
DQa
DQb
74
DQPa
DQb
75
NC
DQb
4
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
PIN ASSIGNMENT (Top View)
100-Pin TQFP
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
SA
NC
NC
V
DD
Q
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
NC/
SA
*
S
A
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
DD
NC
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQPb
NC
V
SS
V
DD
Q
NC
NC
NC
x18
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NC/
DQPb
**
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NC/DQPa
**
NC/
SA
*
SA
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
NC/
DQPc
**
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
SS
V
DD
NC
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NC/
DQPd
**
x32/x36
*Pin 50 is reserved for address expansion.
**No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
5
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
TQFP PIN DESCRIPTIONS
x18
x32/x36
SYMBOL
TYPE
DESCRIPTION
37
37
SA0
Input
Synchronous Address Inputs: These inputs are registered and must
36
36
SA1
meet the setup and hold times around the rising edge of CLK.
32-35, 44-49,
32-35, 44-49,
SA
80-82, 99,
81, 82, 99,
100
100
93
93
BWa#
Input
Synchronous Byte Write Enables: These active LOW inputs allow
94
94
BWb#
individual bytes to be written and must meet the setup and hold
95
BWc#
times around the rising edge of CLK. A byte write enable is LOW
96
BWd#
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQa pins and DQPa; BWb# controls DQb pins and
DQPb. For the x32 and x36 versions, BWa# controls DQa pins and
DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins
and DQPc; BWd# controls DQd pins and DQPd. Parity is only
available on the x18 and x36 versions.
87
87
BWE#
Input
Byte Write Enable: This active LOW input permits BYTE WRITE
operations and must meet the setup and hold times around the
rising edge of CLK.
88
88
GW#
Input
Global Write: This active LOW input allows a full 18-, 32-, or 36-bit
WRITE to occur independent of the BWE# and BWx# lines and must
meet the setup and hold times around the rising edge of CLK.
89
89
CLK
Input
Clock: This signal registers the address, data, chip enable, byte
write enables and burst control inputs on its rising edge. All
synchronous inputs must meet setup and hold times around the
clock's rising edge.
98
98
CE#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device and conditions the internal use of ADSP#. CE# is sampled
only when a new external address is loaded.
92
92
CE2#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
97
97
CE2
Input
Synchronous Chip Enable: This active HIGH input is used to enable
the device and is sampled only when a new external address is
loaded.
86
86
OE#
Input
Output Enable: This active LOW, asynchronous input enables the
data I/O output drivers.
83
83
ADV#
Input
Synchronous Address Advance: This active LOW input is used to
advance the internal burst counter, controlling burst access after
the external address is loaded. A HIGH on this pin effectively causes
wait states to be generated (no address advance). To ensure use of
correct address during a WRITE cycle, ADV# must be HIGH at the
rising edge of the first clock after an ADSP# cycle is initiated.
84
84
ADSP#
Input
Synchronous Address Status Processor: This active LOW input
interrupts any ongoing burst, causing a new external address to be
registered. A READ is performed using the new address,
independent of the byte write enables and ADSC#, but dependent
upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Power-
down state is entered if CE2 is LOW or CE2# is HIGH.
(continued on next page)
6
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
TQFP PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL
TYPE
DESCRIPTION
85
85
ADSC#
Input
Synchronous Address Status Controller: This active LOW input
interrupts any ongoing burst, causing a new external address to be
registered. A READ or WRITE is performed using the new address if
CE# is LOW. ADSC# is also used to place the chip into power-down
state when CE# is HIGH.
31
31
MODE
Input
Mode: This input selects the burst sequence. A LOW on this pin
selects "linear burst." NC or HIGH on this pin selects "interleaved
burst." Do not alter input state while device is operating.
64
64
ZZ
Input
Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in the
memory array is retained. When ZZ is active, all other inputs are
ignored.
(a)
58, 59,
(a)
52, 53,
DQa
Input/ SRAM Data I/Os: For the x18 version, Byte "a" is DQa pins; Byte "b"
62, 63, 68, 69, 56-59, 62, 63
Output is DQb pins. For the x32 and x36 versions, Byte "a" is DQa pins;
72, 73
Byte "b" is DQb pins; Byte "c" is DQc pins; Byte "d" is DQd pins.
(b)
8, 9, 12,
(b)
68, 69,
DQb
Input data must meet setup and hold times around the rising edge
13, 18, 19, 22, 72-75, 78, 79
of CLK.
23
(c)
2, 3, 6-9,
DQc
12, 13
(d)
18, 19,
DQd
22-25, 28, 29
74
51
NC/
DQPa
NC/
No Connect/Parity Data I/Os: On the x32 version, these pins are No
24
80
NC/
DQPb
I/O
Connect (NC). On the x18 version, Byte "a" parity is DQPa; Byte "b"
1
NC/
DQPc
parity is DQPb. On the x36 version, Byte "a" parity is DQPa; Byte
30
NC/
DQPd
"b" parity is DQPb; Byte "c" parity is DQPc; Byte "d" parity is DQPd.
15, 41, 65, 91 15, 41, 65, 91
V
DD
Supply Power Supply: See DC Electrical Characteristics and Operating
Conditions for range.
4, 11, 20, 27,
4, 11, 20, 27,
V
DD
Q
Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and
54, 61, 70, 77 54, 61, 70, 77
Operating Conditions for range.
5, 10, 14, 17,
5, 10, 14, 17,
V
SS
Supply Ground: GND.
21, 26, 40, 55, 21, 26, 40, 55,
60, 67, 71, 76, 60, 67, 71, 76,
90
90
38, 39, 42, 43 38, 39, 42, 43
DNU
Do Not Use: These signals may either be unconnected or wired to
GND to improve package heat dissipation.
1-3, 6, 7, 16,
16, 66
NC
No Connect: These signals are not internally connected and may be
25, 28-30,
connected to ground to improve package heat dissipation.
51-53, 56, 57,
66, 75, 78, 79,
95, 96
50
50
NC/
SA
No Connect: This pin is reserved for address expansion.
7
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
FIRST ADDRESS (EXTERNAL)
SECOND ADDRESS (INTERNAL)
THIRD ADDRESS (INTERNAL)
FOURTH ADDRESS (INTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X01
X...X00
X...X11
X...X10
X...X10
X...X11
X...X00
X...X01
X...X11
X...X10
X...X01
X...X00
LINEAR BURST ADDRESS TABLE (MODE = LOW)
FIRST ADDRESS (EXTERNAL)
SECOND ADDRESS (INTERNAL)
THIRD ADDRESS (INTERNAL)
FOURTH ADDRESS (INTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X01
X...X10
X...X11
X...X00
X...X10
X...X11
X...X00
X...X01
X...X11
X...X00
X...X01
X...X10
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x32/x36)
FUNCTION
GW#
BWE#
BWa#
BWb#
BWc#
BWd#
READ
H
H
X
X
X
X
READ
H
L
H
H
H
H
WRITE Byte "a"
H
L
L
H
H
H
WRITE All Bytes
H
L
L
L
L
L
WRITE All Bytes
L
X
X
X
X
X
NOTE: Using BWE# and BWa# through BWd#, any one or more bytes may be written.
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x18)
FUNCTION
GW#
BWE#
BWa#
BWb#
READ
H
H
X
X
READ
H
L
H
H
WRITE Byte "a"
H
L
L
H
WRITE Byte "b"
H
L
H
L
WRITE All Bytes
H
L
L
L
WRITE All Bytes
L
X
X
X
8
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
TRUTH TABLE
OPERATION
ADDRESS CE# CE2# CE2
ZZ
ADSP# ADSC# ADV# WRITE# OE#
CLK
DQ
USED
Deselected Cycle, Power-Down
None
H
X
X
L
X
L
X
X
X
L-H
High-Z
Deselected Cycle, Power-Down
None
L
X
L
L
L
X
X
X
X
L-H
High-Z
Deselected Cycle, Power-Down
None
L
H
X
L
L
X
X
X
X
L-H
High-Z
Deselected Cycle, Power-Down
None
L
X
L
L
H
L
X
X
X
L-H
High-Z
Deselected Cycle, Power-Down
None
L
H
X
L
H
L
X
X
X
L-H
High-Z
SNOOZE MODE, Power-Down
None
X
X
X
H
X
X
X
X
X
X
High-Z
READ Cycle, Begin Burst
External
L
L
H
L
L
X
X
X
L
L-H
Q
READ Cycle, Begin Burst
External
L
L
H
L
L
X
X
X
H
L-H
High-Z
WRITE Cycle, Begin Burst
External
L
L
H
L
H
L
X
L
X
L-H
D
READ Cycle, Begin Burst
External
L
L
H
L
H
L
X
H
L
L-H
Q
READ Cycle, Begin Burst
External
L
L
H
L
H
L
X
H
H
L-H
High-Z
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H
High-Z
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
High-Z
WRITE Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
WRITE Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
High-Z
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
High-Z
WRITE Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
WRITE Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
NOTE: 1. X means "Don't Care." # means active LOW. H means logic HIGH. L means logic LOW.
2. For WRITE#, L means any one or more byte write enable signals (BWa#, BWb#, BWc#, or BWd#) and BWE# are LOW or
GW# is LOW. WRITE# = H for all BWx#, BWE#, GW# HIGH.
3. BWa# enables WRITEs to DQa pins, DQPa. BWb# enables WRITEs to DQb pins, DQPb. BWc# enables WRITEs to DQc
pins, DQPc. BWd# enables WRITEs to DQd pins, DQPd. DQPa and DQPb are only available on the x18 and x36 versions.
DQPc and DQPd are only available on the x36 version.
4. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation, OE# must be HIGH before the input data setup time and held
HIGH throughout the input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSP# LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more
byte write enable signals and BWE# LOW or GW# LOW for the subsequent L-H edge of CLK. Refer to WRITE timing
diagram for clarification.
9
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
.................................... -0.5V to +4.6V
Voltage on V
DD
Q Supply
Relative to V
SS
.................................... -0.5V to +4.6V
V
IN
............................................... -0.5V to V
DD
Q + 0.5V
Storage Temperature (plastic) ............ -55C to +150C
Junction Temperature** .................................... +150C
Short Circuit Output Current ........................... 100mA
*Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature and
airflow. See Micron Technical Note TN-05-14 for more
information.
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0C
T
A
+70C; V
DD
, V
DD
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
V
IH
2.0
V
DD
+ 0.3
V
1, 2
Input Low (Logic 0) Voltage
V
IL
-0.3
0.8
V
1, 2
Input Leakage Current
0V
V
IN
V
DD
IL
I
-1.0
1.0
A
3
Output Leakage Current
Output(s) disabled,
IL
O
-1.0
1.0
A
0V
V
IN
V
DD
Output High Voltage
I
OH
= -4.0mA
V
OH
2.4
V
1, 4
Output Low Voltage
I
OL
= 8.0mA
V
OL
0.4
V
1, 4
Supply Voltage
V
DD
3.135
3.6
V
1
Isolated Output Buffer Supply
V
DD
Q
3.135
V
DD
V
1, 5
NOTE: 1. All voltages referenced to V
SS
(GND).
2. Overshoot:
V
IH
+4.6V for t
t
KC/2 for I
20mA
Undershoot: V
IL
-0.7V for t
t
KC/2 for I
20mA
Power-up:
V
IH
+3.6V and V
DD
3.135V for t 200ms
3. MODE pin has an internal pull-up, and input leakage = 10A.
4. The load used for V
OH
, V
OL
testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher
than the stated DC values. AC I/O curves are available upon request.
5. V
DD
Q should never exceed V
DD
. V
DD
and V
DD
Q can be connected together for 3.3V I/O.
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0C
T
A
+70C; V
DD
= +3.3V +0.3V/-0.165V; V
DD
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
V
IH
Q
1.7
V
DD
Q + 0.3
V
1, 2
Inputs
V
IH
1.7
V
DD
+ 0.3
V
1, 2
Input Low (Logic 0) Voltage
V
IL
-0.3
0.7
V
1, 2
Input Leakage Current
0V
V
IN
V
DD
IL
I
-1.0
1.0
A
3
Output Leakage Current
Output(s) disabled,
IL
O
-1.0
1.0
A
0V
V
IN
V
DD
Q (DQx)
Output High Voltage
I
OH
= -2.0mA
V
OH
1.7
V
1, 4
I
OH
= -1.0mA
V
OH
2.0
V
1, 4
Output Low Voltage
I
OL
= 2.0mA
V
OL
0.7
V
1, 4
I
OL
= 1.0mA
V
OL
0.4
V
1, 4
Supply Voltage
V
DD
3.135
3.6
V
1
Isolated Output Buffer Supply
V
DD
Q
2.375
2.9
V
1
10
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note: 1) (0C
T
A
+70C; V
DD
= +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYM
TYP
-6.8
-7.5
-8.5
-10
UNITS NOTES
Power Supply
Device selected; All inputs
V
IL
or
V
IH
;
Current: Operating
Cycle time
t
KC (MIN);
I
DD
65
265
245
225
150
mA
2, 3, 4
V
DD
= MAX; Outputs open
Power Supply
Device selected; V
DD
= MAX;
Current: Idle
ADSC#, ADSP#, ADV#, GW#, BWx#
I
DD
1
20
70
65
65
50
mA
2, 3, 4
V
IH
; All inputs
V
SS
+ 0.2 or
V
DD
- 0.2;
Cycle time
t
KC (MIN); Outputs open
CMOS Standby
Device deselected; V
DD
= MAX;
All inputs
V
SS
+ 0.2 or
V
DD
- 0.2;
I
SB
2
0.5
10
10
10
10
mA
3, 4
All inputs static; CLK frequency = 0
TTL Standby
Device deselected; V
DD
= MAX;
All inputs
V
IL
or
V
IH
;
I
SB
3
6
25
25
25
25
mA
3, 4
All inputs static; CLK frequency = 0
Clock Running
Device deselected; V
DD
= MAX;
ADSC#, ADSP#, ADV#, GW#, BWx#
I
SB
4
20
70
65
65
50
mA
3, 4
V
IH
; All inputs
V
SS
+ 0.2 or
V
DD
- 0.2;
Cycle time
t
KC (MIN)
MAX
NOTE: 1. V
DD
Q = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; V
DD
Q = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
2. I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
3. "Device deselected" means device is in power-down mode as defined in the truth table. "Device selected" means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25C and 15ns cycle time.
5. V
DD
Q = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; V
DD
Q = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
6. I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
7. "Device deselected" means device is in power-down mode as defined in the truth table. "Device selected" means
device is active (not in power-down mode).
8. Typical values are measured at 3.3V, 25C, and 15ns cycle time.
11
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
NOTE: 1. This parameter is sampled.
TQFP CAPACITANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
Control Input Capacitance
T
A
= 25C; f = 1 MHz;
C
I
2.7
3.5
p F
1
Input/Output Capacitance (DQ)
V
DD
= 3.3V
C
O
4
5
p F
1
Address Capacitance
C
A
2.5
3.5
p F
1
Clock Capacitance
C
CK
2.5
3.5
p F
1
TQFP THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Thermal Resistance
Test conditions follow standard test methods
JA
40
C/W
1
(Junction to Ambient)
and procedures for measuring thermal
Thermal Resistance
impedance, per EIA/JESD51.
JC
8
C/W
1
(Junction to Top of Case)
12
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
NOTE: 1. Test conditions as specified with the output loading shown in Figure 1 for 3.3V I/O (V
DD
Q = +3.3V +0.3V/-0.165V) and
Figure 3 for 2.5V I/O (V
DD
Q = +2.5V +0.4V/-0.125V).
2. Measured as HIGH above V
IH
and LOW below V
IL
.
3. This parameter is measured with the output loading shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O.
4. This parameter is sampled.
5. Transition is measured 500mV from steady state voltage.
6. Refer to Technical Note TN-58-09, "Synchronous SRAM Bus Contention Design Considerations," for a more thorough
discussion on these parameters.
7. OE# is a "Don't Care" when a byte write enable is sampled LOW.
8. A READ cycle is defined by byte write enables all HIGH or ADSP# LOW for the required setup and hold times. A WRITE
cycle is defined by at least one byte write enable LOW and ADSP# HIGH for the required setup and hold times.
9. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK
when either ADSP# or ADSC# is LOW and chip enabled. All other synchronous inputs must meet the setup and hold
times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at
each rising edge of CLK when either ADSP# or ADSC# is LOW to remain enabled.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 1) (0C
T
A
+70C; V
DD
= +3.3V +0.3V/-0.165V)
-6.8
-7.5
-8.5
-10
DESCRIPTION
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX UNITS NOTES
Clock
Clock cycle time
t
KC
8.0
8.8
10.0
15
ns
Clock frequency
f
KF
125
113
100
66
MHz
Clock HIGH time
t
KH
1.8
1.9
1.9
4.0
ns
2
Clock LOW time
t
KL
1.8
1.9
1.9
4.0
ns
2
Output Times
Clock to output valid
t
KQ
6.8
7.5
8.5
10.0
ns
Clock to output invalid
t
KQX
1.5
1.5
3.0
3.0
ns
3
Clock to output in Low-Z
t
KQLZ
1.5
1.5
1.5
1.5
ns
3, 4, 5, 6
Clock to output in High-Z
t
KQHZ
3.8
4.2
5.0
5.0
ns
3, 4, 5, 6
OE# to output valid
t
OEQ
3.8
4.2
5.0
5.0
ns
7
OE# to output in Low-Z
t
OELZ
0
0
0
0
ns
3, 4, 5, 6
OE# to output in High-Z
t
OEHZ
3.8
4.2
5.0
5.0
ns
3, 4, 5, 6
Setup Times
Address
t
AS
1.8
2.0
2.0
2.5
ns
8, 9
Address status (ADSC#, ADSP#)
t
ADSS
1.8
2.0
2.0
2.5
ns
8, 9
Address advance (ADV#)
t
AAS
1.8
2.0
2.0
2.5
ns
8, 9
Byte write enables
t
WS
1.8
2.0
2.0
2.5
ns
8, 9
(BWa#-BWd#, GW#, BWE#)
Data-in
t
DS
1.8
2.0
2.0
2.5
ns
8, 9
Chip enable (CE#)
t
CES
1.8
2.0
2.0
2.5
ns
8, 9
Hold Times
Address
t
AH
0.5
0.5
0.5
0.5
ns
8, 9
Address status (ADSC#, ADSP#)
t
ADSH
0.5
0.5
0.5
0.5
ns
8, 9
Address advance (ADV#)
t
AAH
0.5
0.5
0.5
0.5
ns
8, 9
Byte write enables
t
WH
0.5
0.5
0.5
0.5
ns
8, 9
(BWa#-BWd#, GW#, BWE#)
Data-in
t
DH
0.5
0.5
0.5
0.5
ns
8, 9
Chip enable (CE#)
t
CEH
0.5
0.5
0.5
0.5
ns
8, 9
13
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
3.3V I/O AC TEST CONDITIONS
Input pulse levels ................. V
IH
= (V
DD
/2.2) + 1.5V
.................... V
IL
= (V
DD
/2.2) - 1.5V
Input rise and fall times ..................................... 1ns
Input timing reference levels ..................... V
DD
/2.2
Output reference levels ............................ V
DD
Q/2.2
Output load ............................. See Figures 1 and 2
Q
50
V = 1.5V
Z = 50
O
T
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
LOAD DERATING CURVES
The Micron 128K x 18, 64K x 32, and 64K x 36
SyncBurst SRAM timing is dependent upon the capaci-
tive loading on the outputs.
Consult the factory for copies of I/O current versus
voltage curves.
Q
50
V = 1.25V
Z = 50
O
T
Figure 3
Q
225
225
5pF
+2.5V
Figure 4
2.5V I/O AC TEST CONDITIONS
Input pulse levels ............. V
IH
= (V
DD
/2.64) + 1.25V
................ V
IL
= (V
DD
/2.64) - 1.25V
Input rise and fall times ..................................... 1ns
Input timing reference levels ................... V
DD
/2.64
Output reference levels ............................... V
DD
Q/2
Output load ............................. See Figures 3 and 4
3.3V I/O Output Load Equivalents
2.5V I/O Output Load Equivalents
14
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
SNOOZE MODE
SNOOZE MODE is a low-current, "power-down"
mode in which the device is deselected and current is
reduced to I
SB
2Z
. The duration of SNOOZE MODE is
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
The ZZ pin is an asynchronous, active HIGH input
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, I
SB
2Z
is guaranteed
after the setup time
t
ZZ is met. Any access pending
when the device enters SNOOZE MODE is not guaran-
teed to complete successfully. Therefore, SNOOZE
MODE must not be initiated until valid pending opera-
tions are completed.
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Current during SNOOZE MODE
ZZ
V
IH
I
SB
2Z
10
mA
ZZ active to input ignored
t
ZZ
t
KC
ns
1
ZZ inactive to input sampled
t
RZZ
t
KC
ns
1
ZZ active to snooze current
t
ZZI
t
KC
ns
1
ZZ inactive to exit snooze current
t
RZZI
0
ns
1
NOTE: 1. This parameter is sampled.
SNOOZE MODE WAVEFORM
t
ZZ
I
SUPPLY
CLK
ZZ
t
RZZ
ALL INPUTS
(except ZZ)
DON'T CARE
I
ISB2Z
t
ZZI
t
RZZI
Outputs (Q)
High-Z
DESELECT or READ Only
15
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
READ TIMING
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
BWa#-BWd#
Q
High-Z
tKQLZ
tKQX
tKQ
ADV#
tOEHZ
tKQ
Single READ
BURST
READ
tOEQ
tOELZ
tKQHZ
Burst wraps around
to its initial state.
tAAH
tAAS
tWH
tWS
tADSH
tADSS
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A1)
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
A2
(NOTE 1)
BWE#, GW#,
ADV# suspends burst.
DONT CARE
UNDEFINED
Deselect Cycle
(Note 4)
NOTE: 1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. Timing is shown assuming that the device was not enabled before entering into this sequence.
4. Outputs are disabled
t
KQHZ after deselect.
-6.8
-7.5
-8.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
AS
1.8
2.0
2.0
2.5
ns
t
ADSS
1.8
2.0
2.0
2.5
ns
t
AAS
1.8
2.0
2.0
2.5
ns
t
WS
1.8
2.0
2.0
2.5
ns
t
CES
1.8
2.0
2.0
2.5
ns
t
AH
0.5
0.5
0.5
0.5
ns
t
ADSH
0.5
0.5
0.5
0.5
ns
t
AAH
0.5
0.5
0.5
0.5
ns
t
WH
0.5
0.5
0.5
0.5
ns
t
CEH
0.5
0.5
0.5
0.5
ns
READ TIMING PARAMETERS
-6.8
-7.5
-8.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
KC
8.0
8.8
10.0
15
ns
f
KF
125
113
100
66
MHz
t
KH
1.8
1.9
1.9
4.0
ns
t
KL
1.8
1.9
1.9
4.0
ns
t
KQ
6.8
7.5
8.5
10.0
ns
t
KQX
1.5
1.5
3.0
3.0
ns
t
KQLZ
1.5
1.5
1.5
1.5
ns
t
KQHZ
3.8
4.2
5.0
5.0
ns
t
OEQ
3.8
4.2
5.0
5.0
ns
t
OELZ
0
0
0
0
ns
t
OEHZ
3.8
4.2
5.0
5.0
ns
16
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
WRITE TIMING
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
BWE#,
BWa#-BWd#
Q
High-Z
ADV#
BURST READ
BURST WRITE
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A1)
D(A3)
D(A3 + 1)
D(A3 + 2)
D(A2 + 3)
A2
A3
D
Extended BURST WRITE
D(A2 + 2)
Single WRITE
tADSH
tADSS
tADSH
tADSS
tOEHZ
tAAH
tAAS
tWH
tWS
tDH
tDS
(NOTE 3)
(NOTE 1)
(NOTE 4)
GW#
tWH
tWS
(NOTE 5)
BYTE WRITE signals are
ignored when ADSP# is LOW.
ADSC# extends burst.
ADV# suspends burst.
DONT CARE
UNDEFINED
NOTE: 1. D(A2) refers to input for address A2. D(A2 + 1) refers to input for the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/
output data contention for the time period prior to the byte write enable inputs being sampled.
4. ADV# must be HIGH to permit a WRITE to the loaded address.
5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa# and BWb# LOW for the x18 version;
or GW# HIGH and BWE#, BWa#-BWd# LOW for the x32 and x36 versions.
-6.8
-7.5
-8.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
DS
1.8
2.0
2.0
2.5
ns
t
CES
1.8
2.0
2.0
2.5
ns
t
AH
0.5
0.5
0.5
0.5
ns
t
ADSH
0.5
0.5
0.5
0.5
ns
t
AAH
0.5
0.5
0.5
0.5
ns
t
WH
0.5
0.5
0.5
0.5
ns
t
DH
0.5
0.5
0.5
0.5
ns
t
CEH
0.5
0.5
0.5
0.5
ns
WRITE TIMING PARAMETERS
-6.8
-7.5
-8.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
KC
8.0
8.8
10.0
15
ns
f
KF
125
113
100
66
MHz
t
KH
1.8
1.9
1.9
4.0
ns
t
KL
1.8
1.9
1.9
4.0
ns
t
OEHZ
3.8
4.2
5.0
5.0
ns
t
AS
1.8
2.0
2.0
2.5
ns
t
ADSS
1.8
2.0
2.0
2.5
ns
t
AAS
1.8
2.0
2.0
2.5
ns
t
WS
1.8
2.0
2.0
2.5
ns
17
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
READ/WRITE TIMING
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A2
tCEH
tCES
BWE#,
BWa#-BWd#
(NOTE 4)
Q
ADV#
Single WRITE
D(A3)
A3
A4
D
BURST READ
Back-to-Back READs
High-Z
Q(A2)
Q(A4)
Q(A4+1)
Q(A4+2)
Q(A4+3)
tWH
tWS
tOEHZ
tDH
tDS
tKQ
tOELZ
(NOTE 1)
A1
A5
A6
D(A5)
D(A6)
Q(A1)
Back-to-Back
WRITEs
DONT CARE
UNDEFINED
NOTE: 1. Q(A4) refers to output from address A4. Q(A4 + 1) refers to output from the next internal burst address following A4.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP#, ADSC# or ADV# cycle is performed.
4. GW# is HIGH.
5. Back-to-back READs may be controlled by either ADSP# or ADSC#.
t
WS
1.8
2.0
2.0
2.5
ns
t
DS
1.8
2.0
2.0
2.5
ns
t
CES
1.8
2.0
2.0
2.5
ns
t
AH
0.5
0.5
0.5
0.5
ns
t
ADSH
0.5
0.5
0.5
0.5
ns
t
WH
0.5
0.5
0.5
0.5
ns
t
DH
0.5
0.5
0.5
0.5
ns
t
CEH
0.5
0.5
0.5
0.5
ns
-6.8
-7.5
-8.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
READ/WRITE TIMING PARAMETERS
-6.8
-7.5
-8.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
KC
8.0
8.8
10.0
15
ns
f
KF
125
113
100
66
MHz
t
KH
1.8
1.9
1.9
4.0
ns
t
KL
1.8
1.9
1.9
4.0
ns
t
KQ
6.8
7.5
8.5
10.0
ns
t
OELZ
0
0
0
0
ns
t
OEHZ
3.8
4.2
5.0
5.0
ns
t
AS
1.8
2.0
2.0
2.5
ns
t
ADSS
1.8
2.0
2.0
2.5
ns
18
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
100-PIN PLASTIC TQFP (JEDEC LQFP)
14.00 0.10
1.40 0.05
16.00 0.20
0.10
+0.10
-0.05
0.15
+0.03
-0.02
22.10
+0.10
-0.20
0.32
+0.06
-0.10
20.10 0.10
0.65 TYP
0.625
1.60 MAX
DETAIL A
SEE DETAIL A
0.60 0.15
1.00 TYP
GAGE PLANE
0.25
0.10
PIN #1 ID
NOTE: 1. All dimensions in millimeters MAX or typical here noted.
MIN
2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron, SyncBurst, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc.
DATA SHEET DESIGNATIONS
No Marking: This data sheet contains minimum and maximum limits specified over the complete power supply
and temperature range for production devices. Although considered final, these specifications are
subject to change, as further product development and data characterization sometimes occur.
19
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_C.p65 Rev. C, Pub. 11/02
2002, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
NOT RECOMENDED FOR NEW DESIGNS
REVISION HISTORY
Added "NOT RECOMENDED FOR NEW DESIGNS," REV. C, Pub. 11/02, FINAL ........................ November/21/02
Removed 165-pin FBGA package, Rev. 6/01 .................................................................................................. June/7/01
Removed FBGA Part Marking Guide, REV 8/00, FINAL ........................................................................ August/22/00
Changed FBGA capacitance values, REV 8/00, FINAL ............................................................................. August/7/00
C
I
; TYP 2.5pF from 4pF; MAX. 3.5pF from 5pF
C
O
; TYP 4pF from 6pF; MAX. 5pF from 7pF
C
CK
; TYP 2.5pF from 5pF; MAX. 3.5pF from 6pF
Removed IT References, REV 7/00, FINAL ..................................................................................................... July/10/00
Added FBGA Part Marking Guide
Added Revision History to Datasheet
Removed IT from Part Number Example, REV 6/00, FINAL ....................................................................... June/21/00
Added # of datalines to the databus in x32/36 Block Diagram
Changed tKQLZ from 4.0ns MIN to 1.5ns MIN
Added Note - "Preliminary Package Data" to FBGA Capacitance and Thermal Resistance Tables
Changed heading on Mechanical Drawing from BGA to FBGA
Added 165-Pin FBGA package, REV 3/00, FINAL ....................................................................................... May/23/00
Added PRELIMINARY PACKAGE DATA to diagram
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