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Электронный компонент: 2N6675

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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/537
Devices
Qualified Level
2N6674
2N6675
2N6689
2N6690



JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6674
2N6689
2N6675
2N6690
Unit
Collector-Emitter Voltage
V
CEO
300
400
Vdc
Collector-Base Voltage
V
CBO
450
650
Vdc
Collector-Base Voltage
V
CEX
450
650
Vdc
Emitter-Base Voltage
V
EBO
7.0
Vdc
Base Current
I
B
5.0
Adc
Collector Current
I
C
15
Adc
2N6674
2N6675
2N6689
2N6690
Total Power Dissipation @ T
A
= +25
0
C
@ T
C
= +25
0
C
(1)
P
T
6.0
(2)
175
3.0
(3)
175
W
W
Operating & Storage Temperature Range
T
op;
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
R
JC
1.0
0
C/W
1) Derate linearly 1.0 W/
0
C for T
C
> 25
0
C
2) Derate linearly 34.2 mW/
0
C for T
A
> 25
0
C
3)
Derate linearly 17.1 mW/
0
C for T
A
> 25
0
C
2N6674, 2N6675
TO-3 (TO-204AA)*


2N6689, 2N6690
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc 2N6674, 2N6689
2N6675, 2N6690
V
(BR)CEO
300
400
Vdc
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= -1.5 Vdc 2N6674, 2N6689
V
CE
= 650 Vdc, V
BE
= -1.5 Vdc 2N6675, 2N6690
I
CEX
0.1
0.1
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


2N6674, 2N6675, 2N6689, 2N6690 JAN SERIES

ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
I
EBO
2.0
mAdc
Collector-Base Cutoff Current
V
CB
= 450 Vdc 2N6674, 2N6689
V
CB
= 650 Vdc 2N6675, 2N6690
I
CBO
1.0
1.0
mAdc
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
I
C
= 1 Adc; V
CE
= 3.0 Vdc
I
C
= 10 Adc; V
CE
= 2.0 Vdc
h
FE
15
8
40
20
Collector-Emitter Saturation Voltage
I
C
= 10 Adc; I
B
= 2 Adc
I
C
= 15 Adc; I
B
= 5 Adc
V
CE(sat)
1.0
5.0
Vdc
Base-Emitter Saturation Voltage
I
C
= 10 Adc; I
B
= 2 Adc
V
BE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 5 MHz
h
fe
3.0
10
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
150
500
pF
SWITCHING CHARACTERISTICS
Delay Time
t
d
0.1
s
Rise Time
t
r
0.6
s
Storage Time
t
s
2.5
s
Fall Time
t
f
0.5
s
Cross-Over Time
See Figure 3 of MIL-PRF-19500/537
t
c
0.5
s
SAFE OPERATING AREA
DC Tests (continuous dc)
T
C
= +25
0
C, power application time = 1.0 s; 1 Cycle, (See Figure 4 of MIL-PRF-19500/537)
Test 1
V
CE
= 11.7 Vdc, I
C
= 15 Adc All Types
Test 2
V
CE
= 30 Vdc, I
C
= 5.9 Adc 2N6674, 2N6675
Test 3
V
CE
= 100 Vdc, I
C
= 0.25 Adc All Types
Test 4
V
CE
= 25 Vdc, I
C
= 7.0 Adc 2N6689, 2N6690
Test 5
V
CE
= 300 Vdc, I
C
= 20 mAdc 2N6674, 2N6689
V
CE
= 400 Vdc, I
C
= 10 mAdc 2N6675, 2N6690
Clamped Switching
T
A
= 25
0
C;
V
CC
= 15 Vdc; Load condition B; R
BB1
= 5
; R
BB2
= 1.5
;
V
BB2
= 5 Vdc; L = 50
H; R of inductor = .05
; R
L
= R of inductor. (See Figure 6 of MIL-PRF-19500/537)
Clamp Voltage = 350; I
C
= 10 Adc 2N6674, 2N6689
Clamp Voltage = 450; I
C
= 10 Adc 2N6675, 2N6690
(4) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2