FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 C/W maximum
THERMAL IMPEDANCE: (ZOJX): 70
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MILLIMETERS INCHES
DIM
MIN
MAX
MIN MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130 .146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
137
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
AVAILABLE IN
JAN, JANTX
AND
JANTXV
PER MIL-PRF-19500/118
GENERAL PURPOSE SILICON DIODES
METALLURGICALLY BONDED
1N5194UR
1N5195UR
1N5196UR
CDLL5194
CDLL5195
CDLL5196
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65C to +175C
Storage Temperature: -65C to +175C
Operating Current: 200 mA
Derating: 1.2mA/C from 25C to 150C
1.0mA/C from 150C to 175C
Forward Current: 650mA
VRM
VRWM
I O
I O
I FSM
TYPE
TA = +150
C
TP=1/120 S
TA=25C
V(pk)
V(pk)
mA
mA
A
CDLL, 1N5194UR
80
70
200
50
2
CDLL, 1N5195UR
180
180
200
50
2
CDLL, 1N5196UR
250
225
200
50
2
VF
IR1 at VRWM
IR2 at VRM IR3 at VRWM
TYPE
@100mA
TA=25C
TA = 150
C
V dc
nA dc
A
A dc
CDLL, 1N5194UR
0.8 - 1.0
25
100
5
CDLL, 1N5195UR
0.8 - 1.0
25
100
5
CDLL, 1N5196UR
0.8 - 1.0
25
100
5
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