MSASC100W100H
MSASC100W100HR
100 Volts
100 Amps
Features
Tungsten schottky barrier
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode, MSASC100W100H)
and reverse polarity (strap-to-cathode: MSASC100W100HR)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
V
RRM
100
Volts
Working Peak Reverse Voltage
V
RWM
100
Volts
DC Blocking Voltage
V
R
100
Volts
Average Rectified Forward Current, Tc
135
C
I
F(ave)
100
Amps
derating, forward current, Tc
135
C
dI
F
/dT
2.5
Amps/
C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
I
FSM
500
Amps
Peak Repetitive Reverse Surge Current, tp= 1
s, f= 1kHz
I
RRM
2
Amp
Junction Temperature Range
T
j
-65 to +175
C
Storage Temperature Range
T
stg
-65 to +175
C
Thermal Resistance, Junction to Case:
MSASC100W100H
JC
0.35
0.5
C/W
Maximum Ratings @ 25
C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0306A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW LEAKAGE
SCHOTTKY DIODE
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