Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HB-2H
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Base driver for High voltage transistor modules
QM10HB-2H
I
C
Collector current .......................... 10A
V
CEX
Collector-emitter voltage ......... 1000V
h
FE
DC current gain................................. 5
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
28
3.2
1.6
2.2
1.1
B
C
E
7.3
7.3
2.5
0.5
5.5
9
(42.5)
28
14.5
3
20.5
4
3.5
B
C
E
LABEL
Feb.1999
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V
I
C
=5A, I
B
=1A
I
C
=5A, V
CE
=1V
V
CC
=600V, I
C
=5A, I
B1
=I
B2
=1A
Transistor part
Conductive grease applied
Min.
--
--
--
--
--
5
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (c-f)
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector dissipation
Base current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Ratings
1000
1000
1000
7
10
100
2
40~+150
40~+125
2500
0.59~0.98
6~10
40
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
T
C
=25
C
DC
Charged part to case, AC for 1 minute
Mounting screw M3
Typical value
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
P
C
I
B
T
j
T
stg
V
iso
--
--
Unit
V
V
V
V
A
W
A
C
C
V
Nm
kgcm
g
MITSUBISHI TRANSISTOR MODULES
QM10HB-2H
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
--
s
s
s
C/ W
C/ W
Limits
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance
(case to fin)
Typ.
--
--
--
--
--
--
--
--
--
--
--
Max.
1.0
1.0
150
1.0
1.5
--
1.5
7.0
2.0
1.2
0.4
Feb.1999
DC CURRENT GAIN h
FE
0
10
0
10
0
10
1
10
1
10
0
10
1
10
20
16
12
8
4
0
0
1
2
3
4
5
I
B
=2.5A
I
B
=2.0A
I
B
=1.5A
I
B
=1.0A
I
B
=0.5A
T
j
=25C
0
10
7
5
4
3
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
1
10
7
5
4
3
3
2
T
j
=25C
T
j
=125C
I
B
=1A
V
BE(sat)
V
CE(sat)
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=5V
T
j
=25C
T
j
=125C
V
CE
=1V
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
V
CC
=600V
I
B1
=I
B2
=1A
t
s
t
f
t
on
T
j
=25C
T
j
=125C
2
10
SATUTATION VOLTAGE
CHARACTERISTICS (TYPICAL)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM10HB-2H
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
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