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Электронный компонент: QM500

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Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
QM500HA-H
I
C
Collector current ........................ 500A
V
CEX
Collector-emitter voltage ........... 600V
h
FE
DC current gain............................. 750
Insulated Type
 UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
93
10 18.5
25
27
26.5
6.5
M6
62
48
10
10
9
9
37.5
28
25
13.5
107
9
8
E
16
16
C
BX
BE
24.5
7
13
4.5
32.2
35
B
C
BX
E
E
M4
LABEL
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Feb.1999
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
B(E) terminal screw M4
BX terminal screw M4
Typical value
Ratings
600
600
600
7
500
500
1780
10
5000
40~+150
40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
640
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
Nm
kgcm
Nm
kgcm
Nm
kgcm
g
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
750
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=500A, I
B
=0.67A
I
C
=500A (diode forward voltage)
I
C
=500A, V
CE
=2.5V
V
CC
=300V, I
C
=500A, I
B1
=1A, I
B2
=10A
Transistor part
Diode part
Conductive grease applied
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
5.0
5.0
500
2.5
3.5
1.8
--
3.0
10
3.5
0.07
0.25
0.04
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Feb.1999
1
10
0
10
2
10
1
10
1000
800
600
400
200
0
0
1
2
3
4
5
T
j
=25C
I
B
=200mA
I
B
=2A
I
B
=1A
I
B
=0.5A
7
5
4
3
2
7
5
4
3
2
2.4
2.6
2.8
3.0
3.2
3.4
V
CE
=2.5V
1
10
T
j
=25C
0
10
1
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
V
CE
=2.5V
T
j
=25C
T
j
=125C
2
10
3
10
4
10
5
10
0
10
1
10
2
10
3
10
4
4
4
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
I
B
=0.67A
T
j
=25C
T
j
=125C
4
4
4
V
BE(sat)
V
CE(sat)
2
10
1
10
0
10
1
10
0
10
1
10
2
10
3
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
2 3 4 5 7
2
10
2 3 4 5 7
V
CC
=300V
I
B1
=1A
I
B2
=10A
T
j
=25C
T
j
=125C
t
f
t
s
t
on
1
10
3
10
7
5
3
2
7
5
3
2
7
5
3
2
0
4
4
4
1
2
3
4
5
I
C
=100A
T
j
=25C
T
j
=125C
I
C
=500A
I
C
=300A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
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Feb.1999
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
3
10
2
10
1
10
0
10
0
10
1
10
3
10
2
10
1600
0
0
200
400
600
800
800
100
300
500
700
1400
1200
1000
600
400
200
T
j
=125C
I
B2
=3A
10A
100
80
60
40
20
0
0
20
60
100 120
160
40
80
140
10
30
50
70
90
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
2
V
CC
=300V
I
C
=500A
T
j
=25C
T
j
=125C
I
B1
=1A
t
s
t
f
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
D.C.
10ms
1ms
100s
50s
T
C
=25C
7
5
3
2
7
5
3
2
7
5
3
2
0
2.0
1.6
0.4
0.8
1.2
T
j
=25C
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0.08
0.06
0.04
0.02
0
4
4
4
7
5
3
2
4
0
10
1
10
NONREPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
200ms
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
background image
Feb.1999
1
10
2
10
3
10
0
10
7
5
4
3
2
0
10
7
5
4
3
2
0
1000
2000
3000
4000
5000
1
10
2
10
7
5
3
2
7
5
3
2
7
5
3
2
0.25
0.20
0.15
0.10
0.05
0
4
4
4
7
5
3
2
4
0
10
1
10
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
CONDUCTION TIME (CYCLES AT 60Hz)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)