Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
QM50DY-24B
I
C
Collector current .......................... 50A
V
CEX
Collector-emitter voltage ......... 1200V
h
FE
DC current gain............................. 750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
107.5
93
0.25
12
2
6.5
34.5
4
4
18.5
13
5
23.5
23
23
B1
E1
E2
B2
C2E1
E2
C1
C2E1
C1
B2
E2
E1
B1
E2
6.5MIN.
21
(8)
0.5
+1
37.2
28.5
22
8
8
15
22
3M5
Tab#110, t=0.5
(23)
LABEL
Feb.1999
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
750
--
--
--
--
--
--
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
1200
1200
1200
7
50
50
400
3
50
40~+150
40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
250
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
Nm
kgcm
g
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1200V, V
EB
=2V
V
CB
=1200V, Emitter open
V
EB
=7V
I
C
=50A, I
B
=67mA
I
C
=50A (diode forward voltage)
I
C
=50A, V
CE
=4V
V
CC
=600V, I
C
=50A, I
B1
=100mA, I
B2
=1.0A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
2.0
2.0
50
4.0
4.0
1.8
--
2.5
15
3.0
0.31
1.2
0.13
MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10
1
10
3
10
2
10
0
10
1
10
7
5
4
3
2
2
10
7
5
4
3
2
2.8
3.2
3.6
4.0
4.4
4.8
V
CE
=4V
T
j
=25C
0
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
4
4
4
T
j
=25C
T
j
=125C
I
C
=30A
I
C
=50A
100
80
60
40
20
0
0
1
2
3
4
5
T
j
=25C
I
B
=10mA
I
B
=400mA
I
B
=67mA
I
B
=20mA
I
B
=200mA
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=4V
T
j
=25C
T
j
=125C
V
CE
=10V
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE(sat)
V
BE(sat)
T
j
=25C
T
j
=125C
I
B
=67mA
1
10
7
5
4
3
2
0
10
7
5
4
3
3 4 5 7
1
10
2 3 4 5 7
2
10
3
2
2 3
T
j
=25C
T
j
=125C
t
f
t
on
t
s
V
CC
=600V
I
B1
=100mA
I
B2
=1A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
2
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
1
10
0
10
1
10
2
10
3
10
1
10
7
5
4
3
2
1
10
2 3 4 5 7
0
10
2 3 4 5 7
1
10
0
10
7
5
4
3
3
2
T
j
=25C
T
j
=125C
t
s
t
f
V
CC
=600V
I
C
=50A
I
B1
=100mA
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25C
T
j
=125C
120
40
0
0
400
80
800
1200
200
600
1000
1400
100
60
20
I
B2
=1A
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25C
7
5
3
2
2
2
200
S
100
S
DC
1m
S
50
S
7
5
3
2
7
5
3
2
7
5
3
2
0.5
0.4
0.3
0.1
0
2 3 5 7
3
2
5 7
100
90
60
40
20
0
0
160
20
40
60
80 100 120 140
80
10
70
50
30
NONREPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
0.2
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
Feb.1999
0
10
0
10
0
10
1
10
2
10
3
10
1
10
0
10
0
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
100
200
300
400
500
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CC
=600V
I
B1
=100mA
I
B2
=1A
T
j
=125C
T
j
=25C
I
rr
t
rr
Q
rr
7
5
3
2
7
5
3
2
7
5
3
2
2.0
1.6
1.2
0.8
0.4
0
2 3
5 7
3
2
1.8
1.4
1.0
0.2
0.6
I
rr
(A), Q
rr
(
c)
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM50DY-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
t
rr
(
s)
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