Feb.1999
BuP EuP
BvP EvP
BwPEwP
BuN EuN
BvN EvN BwN EwN
P
N
U
V
W
P
N
10
102
0.5
6 14 6 14 6 17
4
5.5
7M4
740.25
8.5
17
30
12
24.5
27
30
43
16.5
91
0.5
22
20
20
22
2
80
0.25
11
30
+1.5
0.5
29.5
7
LABEL
Tab#110, t=0.5
8.1
P
N
BuP
EuP
BuN
EuN
U
BvP
EvP
BvN
EvN
V
BwP
EwP
BwN
EwN
W
P
N
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM50TB-2HB
I
C
Collector current .......................... 50A
V
CEX
Collector-emitter voltage ......... 1000V
h
FE
DC current gain............................. 750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
MITSUBISHI TRANSISTOR MODULES
QM50TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Note: All Transistor Units are 4-Stage Darlingtons.
Feb.1999
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
T
j
T
stg
V
iso
--
--
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Ratings
1000
1000
1000
7
50
50
400
3
500
40~+150
40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
660
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
Typical value
ABSOLUTE MAXIMUM RATINGS
(Tj=25
C, unless otherwise noted)
Unit
V
V
V
V
A
A
W
A
A
C
C
V
Nm
kgcm
Nm
kgcm
g
MITSUBISHI TRANSISTOR MODULES
QM50TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Min.
--
--
--
--
--
--
750
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V
I
C
=50A, I
B
=67mA
I
C
=50A (diode forward voltage)
I
C
=50A, V
CE
=4.0V
V
CC
=600V, I
C
=50A, I
B1
=0.1mA, I
B2
=1.0A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
2.0
2.0
50
4.0
4.0
1.8
--
2.5
15
3.0
0.31
1.2
0.2
Feb.1999
1
10
0
10
1
10
2
10
3
10
0
10
1
10
7
5
4
3
2
2
10
7
5
4
3
2
2.8
3.2
3.6
4.0
4.4
4.8
V
CE
=4V
T
j
=25C
100
80
60
40
20
0
0
1
2
3
4
5
T
j
=25C
I
B
=400mA
I
B
=200mA
I
B
=67mA
I
B
=20mA
I
B
=10mA
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=4V
T
j
=25C
T
j
=125C
V
CE
=10V
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE(sat)
V
BE(sat)
T
j
=25C
T
j
=125C
I
B
=67mA
0
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
4
4
4
T
j
=25C
T
j
=125C
I
C
=30A
I
C
=50A
1
10
7
5
4
3
2
0
10
7
5
4
3
3 4 5 7
2 3 4 5 7
2
10
3
2
2 3
T
j
=25C
T
j
=125C
t
f
t
on
t
s
V
CC
=600V
I
B1
=100mA
I
B2
=1A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM50TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10
1
10
0
10
1
10
2
10
3
10
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
100
80
60
40
20
0
0
200
400
600
800
1000
T
j
=125C
I
B2
=1A
1
10
7
5
4
3
2
1
10
2 3 4 5 7
0
10
2 3 4 5 7
1
10
0
10
7
5
4
3
3
2
T
j
=25C
T
j
=125C
t
s
t
f
V
CC
=600V
I
C
=50A
I
B1
=100mA
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25C
50
S
DC
1m
S
100
90
60
40
20
0
0
160
20
40
60
80 100 120 140
80
10
70
50
30
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25C
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
0.5
0.4
0.3
0.1
0
4
4
4
2 3 45 7
0.2
3
2
4 5 7
NONREPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM50TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
Feb.1999
0
10
1
10
0
10
1
10
2
10
3
10
1
10
1
10
0
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
100
200
300
400
500
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CC
=600V
I
B1
=100mA
I
B2
=1A
T
j
=125C
T
j
=25C
I
rr
t
rr
Q
rr
7
5
3
2
7
5
3
2
7
5
3
2
2.0
1.6
1.2
0.8
0.4
0
4
4
4
2 3 4 5 7
3
2
5
4
1.8
1.4
1.0
0.6
0.2
I
rr
(A), Q
rr
(
c)
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM50TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
t
rr
(
s)
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