ChipFind - документация

Электронный компонент: 1N5818

Скачать:  PDF   ZIP
1
Rectifier Device Data
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metaltosilicon
power diode. Stateoftheart geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in lowvoltage, highfrequency inverters, free
wheeling diodes, and polarity protection diodes.
Extremely Low vF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220
C
Max. for 10 Seconds, 1/16
from case
Shipped in plastic bags, 1000 per bag.
Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the
part number
Polarity: Cathode Indicated by Polarity Band
Marking: 1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Rating
Symbol
1N5817
1N5818
1N5819
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
V
NonRepetitive Peak Reverse Voltage
VRSM
24
36
48
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified Forward Current (2)
(VR(equiv)
0.2 VR(dc), TL = 90
C,
R
JA = 80
C/W, P.C. Board Mounting, see Note 2, TA = 55
C)
IO
1.0
A
Ambient Temperature (Rated VR(dc), PF(AV) = 0, R
JA = 80
C/W)
TA
85
80
75
C
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase 60 Hz,
TL = 70
C)
IFSM
25 (for one cycle)
A
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
TJ, Tstg
65 to +125
C
Peak Operating Junction Temperature (Forward Current applied)
TJ(pk)
150
C
THERMAL CHARACTERISTICS
(2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
80
C/W
ELECTRICAL CHARACTERISTICS
(TL = 25
C unless otherwise noted) (2)
Characteristic
Symbol
1N5817
1N5818
1N5819
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 0.1 A)
(iF = 1.0 A)
(iF = 3.0 A)
vF
0.32
0.45
0.75
0.33
0.55
0.875
0.34
0.6
0.9
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
(TL = 25
C)
(TL = 100
C)
IR
1.0
10
1.0
10
1.0
10
mA
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32
from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by 1N5817/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
1N5817
1N5818
1N5819
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
20, 30 and 40 VOLTS
CASE 5904
1N5817 and 1N5819 are
Motorola Preferred Devices
Rev 3
125
115
105
95
85
75
20
15
10
7.0
5.0
4.0
3.0
2.0
T R
, REFERENCE
TEMPERA
TURE (
C)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 1. Maximum Reference Temperature
1N5817
40
30
23
60
80
R
JA (
C/W) = 110
125
115
105
95
85
75
20
15
10
7.0
5.0
30
4.0
3.0
40
30
23
R
JA (
C/W) = 110
80
60
Figure 2. Maximum Reference Temperature
1N5818
125
115
105
95
85
75
20
15
10
7.0
5.0
30
4.0
40
R
JA (
C/W) = 110
60
80
Figure 3. Maximum Reference Temperature
1N5819
Circuit
Load
Half Wave
Resistive
Capacitive*
Full Wave, Bridge
Resistive
Capacitive
Full Wave, Center Tapped*
Resistive
Capacitive
Sine Wave
Square Wave
0.5
0.75
1.3
1.5
0.5
0.75
0.65
0.75
1.0
1.5
1.3
1.5
40
30
23
T R
, REFERENCE
TEMPERA
TURE (
C
)
VR, DC REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
*Note that VR(PK)
2.0 Vin(PK).
Use line to center tap voltage for Vin.
Table 1. Values for Factor F
T R
, REFERENCE
TEMPERA
TURE (
C)
1N5817 1N5818 1N5819
2
Rectifier Device Data
NOTE 1 -- DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
TA(max) =
where TA(max) =
TJ(max) =
PF(AV) =
PR(AV) =
R
JA =
TJ(max) R
JAPF(AV) R
JAPR(AV)
Maximum allowable ambient temperature
Maximum allowable junction temperature
(1)
Average forward power dissipation
(125
C or the temperature at which thermal
runaway occurs, whichever is lowest)
Average reverse power dissipation
Junctiontoambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by taking re-
verse power dissipation and thermal runaway into consideration. The
figures solve for a reference temperature as determined by equation
(2).
TR = TJ(max) R
JAPR(AV)
(2)
Substituting equation (2) into equation (1) yields:
TA(max) = TR R
JAPF(AV)
(3)
Inspection of equations (2) and (3) reveals that TR is the ambient
temperature at which thermal runaway occurs or where TJ = 125
C,
when forward power is zero. The transition from one boundary condi-
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
difference in the rate of change of the slope in the vicinity of 115
C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For use in com-
mon rectifier circuits, Table 1 indicates suggested factors for an equiv-
alent dc voltage to use for conservative design, that is:
(4)
VR(equiv) = Vin(PK) x F
The factor F is derived by considering the properties of the various rec-
tifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5818 operated in a 12volt dc supply
using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) =
0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), R
JA = 80
C/W.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
Step 1. Find
VR(equiv) = (1.41)(10)(0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 109
C
Step 1. Find
@ VR = 9.2 V and R
JA = 80
C/W.
Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W
@
I(FM)
I(AV)
= 10 and IF(AV) = 0.5 A.
Step 4. Find TA(max) from equation (3).
Step 4. Find
TA(max) = 109 (80) (0.5) = 69
C.
**Values given are for the 1N5818. Power is slightly lower for the
1N5817 because of its lower forward voltage, and higher for the
1N5819.
1N5817 1N5818 1N5819
3
Rectifier Device Data
7/8
20
40
50
90
80
70
60
30
10
3/4
5/8
1/2
3/8
1/4
1.0
1/8
1
R
JL
, THERMAL

RESIST
ANCE,
JUNCTIONT
OLEAD (
C/W)
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
L, LEAD LENGTH (INCHES)
Figure 4. SteadyState Thermal Resistance
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
4.0
2.0
1.0
0.8
0.6
0.4
0.2
P F(A
V)
,
A
VERAGE POWER DISSIP
A
TION
(W
A
TTS)
IF(AV), AVERAGE FORWARD CURRENT (AMP)
dc
SQUARE WAVE
TJ
125
C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10k
2.0k
1.0k
500
200
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
5.0k
r(t), TRANSIENT

THERMAL

RESIST
ANCE
(NORMALIZED)
Z
JL(t) = Z
JL
r(t)
Ppk
Ppk
tp
t1
TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
TJL = Ppk
R
JL [D + (1 D)
r(t1 + tp) + r(tp) r(t1)]
where
TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.:
r(t) =
r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
t, TIME (ms)
NOTE 2 -- MOUNTING DATA
Data shown for thermal resistance junctiontoambient (R
JA) for
the mountings shown is to be used as typical guideline values for pre-
liminary engineering, or in case the tie point temperature cannot be
measured.
TYPICAL VALUES FOR R
JA IN STILL AIR
Mounting
Method
1/8
1/4
1/2
3/4
Lead Length, L (in)
R
JA
1
2
3
52
67
65
80
72
87
85
100
C/W
C/W
C/W
50
Mounting Method 1
P.C. Board with
11/2
x 11/2
copper surface.
Mounting Method 3
P.C. Board with
11/2
x 11/2
copper surface.
L
L
L = 3/8
BOARD GROUND
PLANE
VECTOR PIN MOUNTING
L
L
Mounting Method 2
5
10
20
Sine Wave
I(FM)
I(AV)
=
(Resistive Load)
Capacitive
Loads
{
Figure 5. Forward Power Dissipation
1N581719
Figure 6. Thermal Response
1N5817 1N5818 1N5819
4
Rectifier Device Data
100
70
5.0
125
115
105
95
85
75
20
7.0
10
3.0
2.0
30
1.0
40
15
5.0
3.0
2.0
0.3
0.2
0.1
40
36
12
30
20
1.0
0.5
0.05
0.03
24
16
20
8.0
4.0
28
0
32
10
20
7.0
5.0
2.0
0.2
0.3
0.5
0.7
1.0
3.0
0.9
1.0
1.1
0.1
0.07
0.05
0.03
0.02
0.6
0.5
0.4
0.3
0.2
0.7
0.1
0.8
NOTE 3 -- THERMAL CIRCUIT MODEL
(For heat conduction through the leads)
TA(A)
TA(K)
R
S(A)
R
L(A)
R
J(A)
R
J(K)
R
L(K)
R
S(K)
PD
TL(A)
TC(A)
TJ
TC(K)
TL(K)
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
i F
, INST
ANT
ANEOUS
FOR
W
ARD
CURRENT

(AMP)
Figure 7. Typical Forward Voltage
I FSM
, PEAK SURGE CURRENT
(AMP)
NUMBER OF CYCLES
Figure 8. Maximum NonRepetitive Surge Current
I R
, REVERSE CURRENT

(mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Typical Reverse Current
TC = 100
C
25
C
1 Cycle
TL = 70
C
f = 60 Hz
Surge Applied at
Rated Load Conditions
1N5817
1N5818
1N5819
TJ = 125
C
100
C
25
C
Use of the above model permits junction to lead thermal resistance
for any mounting configuration to be found. For a given total lead
length, lowest values occur when one side of the rectifier is brought
as close as possible to the heatsink. Terms in the model signify:
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
R
S = Thermal Resistance, Heatsink to Ambient
R
L = Thermal Resistance, Lead to Heatsink
R
J = Thermal Resistance, Junction to Case
PD = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
R
L = 100
C/W/in typically and 120
C/W/in maximum
R
J = 36
C/W typically and 46
C/W maximum.
75
C
1N5817 1N5818 1N5819
5
Rectifier Device Data
NOTE 4 -- HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority carri-
er conduction, it is not subject to junction diode forward and reverse re-
covery transients due to minority carrier injection and stored charge.
Satisfactory circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable capacitance. (See
Figure 10.)
Rectification efficiency measurements show that operation will be
satisfactory up to several megahertz. For example, relative waveform
rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the
ratio of dc power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine wave inputs.
However, in contrast to ordinary junction diodes, the loss in waveform
efficiency is not indicative of power loss: it is simply a result of reverse
current flow through the diode capacitance, which lowers the dc output
voltage.
10
20
0.8
70
200
100
50
30
20
10
6.0
4.0
2.0
1.0
0.6
8.0
0.4
40
C, CAP
ACIT
ANCE
(pF)
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
TJ = 25
C
f = 1.0 MHz
1N5819
1N5818
1N5817