## Электронный компонент: 1N5822 | Скачать: PDF ZIP |

power diode. Stateoftheart geometry features chrome barrier metal,

epitaxial construction with oxide passivation and metal overlap contact. Ideally

suited for use as rectifiers in lowvoltage, highfrequency inverters, free

wheeling diodes, and polarity protection diodes.

Readily Solderable

part number

DC Blocking Voltage

R

60 Hz, TL = 75

curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.

(iF = 3.0 Amp)

(iF = 9.4 Amp)

0.475

0.850

0.500

0.900

0.525

0.950

above 0.1 VRWM. Proper derating may be accomplished by use of

equation (1).

PR(AV) = Average reverse power dissipation

R

The figures solve for a reference temperature as determined by

equation (2).

tion to the other is evident on the curves of Figures 1, 2, and 3 as a

difference in the rate of change of the slope in the vicinity of 115

in common rectifier circuits, Table 1 indicates suggested factors for

an equivalent dc voltage to use for conservative design, that is:

rectifier circuits and the reverse characteristics of Schottky diodes.

(IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), R

1N5820 because of its lower forward voltage, and higher for the

1N5822. Variations will be similar for the MBRprefix devices, using

PF(AV) from Figure 7.

RESIST

TYPICAL

THERMAL

RESIST

r(t1 + tp) = normalized value of transient thermal resistance at time

t1 + tp, etc.

mocouple placed on the lead as close as possible to the tie point.

The thermal mass connected to the tie point is normally large

enough so that it will not significantly respond to heat surges

generated in the diode as a result of pulsed operation once

steadystate conditions are achieved. Using the measured val-

ue of TL, the junction temperature may be determined by:

TJ = TL +

A

Loads

10

20

lead length, lowest values occur when one side of the rectifier is

brought as close as possible to the heat sink. Terms in the model

signify:

TA = Ambient Temperature

PF = Forward Power Dissipation

PR = Reverse Power Dissipation

(Subscripts (A) and (K) refer to anode and cathode sides, respec-

tively.) Values for thermal resistance components are:

R

TL = TJ(max)

for preliminary engineering, or in case the tie point temperature

cannot be measured.

21/2

reverse recovery transients due to minority carrier injection and

stored charge. Satisfactory circuit analysis work may be performed

by using a model consisting of an ideal diode in parallel with a

variable capacitance. (See Figure 11.)

(AMP)

(AMP)

REVERSE CURRENT

(mA)

1N5821

1N5822