1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
2N5400
2N5401
Unit
Collector Emitter Voltage
VCEO
120
150
Vdc
Collector Base Voltage
VCBO
130
160
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5400
2N5401
V(BR)CEO
120
150
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
2N5400
2N5401
V(BR)CBO
130
160
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
2N5400
(VCB = 120 Vdc, IE = 0)
2N5401
(VCB = 100 Vdc, IE = 0, TA = 100
C)
2N5400
(VCB = 120 Vdc, IE = 0, TA = 100
C)
2N5401
ICBO
--
--
--
--
100
50
100
50
nAdc
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
--
50
nAdc
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N5400/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N5400
2N5401
*Motorola Preferred Device
*
CASE 2904, STYLE 1
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
2N5400 2N5401
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5400
2N5401
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N5400
2N5401
(IC = 50 mAdc, VCE = 5.0 Vdc)
2N5400
2N5401
hFE
30
50
40
60
40
50
--
--
180
240
--
--
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
--
--
0.2
0.5
Vdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
--
--
1.0
1.0
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
2N5400
2N5401
fT
100
100
400
300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
6.0
pF
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N5400
2N5401
hfe
30
40
200
200
--
Noise Figure
(IC = 250
Adc, VCE = 5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz)
NF
--
8.0
dB
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
2N5400 2N5401
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
30
100
150
200
0.1
h , CURRENT
GAIN
0.5
2.0
3.0
10
0.2
0.3
20
1.0
5.0
FE
TJ = 125
C
25
C
55
C
70
50
20
30
50
100
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0.1
0.5
2.0
10
0.2
1.0
5.0
20
50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
Figure 3. Collector CutOff Region
VBE, BASEEMITTER VOLTAGE (VOLTS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
, COLLECT
OR CURRENT
(
A)
I C
103
0.1
0.3
0.2
102
101
100
101
102
103
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
IC = 1.0 mA
10 mA
30 mA
100 mA
VCE = 30 V
IC = ICES
TJ = 125
C
75
C
25
C
REVERSE
FORWARD
2N5400 2N5401
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 4. "On" Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.7
1.0
0.2
Figure 5. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
, VOL
T
AGE (VOL
TS)
0
TJ = 25
C
VCE(sat) @ IC/IB = 10
2.5
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
C, CAP
ACIT
ANCE (pF)
100
TJ = 25
C
Cibo
Figure 6. Switching Time Test Circuit
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.5
0.3
0.1
VBE(sat) @ IC/IB = 10
0.3
3.0
30
V
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
Figure 7. Capacitances
10.2 V
Vin
10
s
INPUT PULSE
VBB
+ 8.8 V
100
RB
5.1 k
0.25
F
Vin
100
1N914
Vout
RC
VCC
30 V
3.0 k
tr, tf
10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.3
3.0
30
2.0
1.5
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5
TJ = 55
C to 135
C
VC for VCE(sat)
VB for VBE(sat)
Cobo
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.2
0.5
1.0
2.0
5.0
10
20
0.3
3.0
0.7
7.0
t,
TIME (ns)
1000
100
200
300
500
700
10
20
30
50
70
0.2
0.5
1.0
2.0
5.0
10
20
0.3
3.0
30
50
100
200
IC, COLLECTOR CURRENT (mA)
Figure 8. TurnOn Time
IC/IB = 10
TJ = 25
C
td @ VBE(off) = 1.0 V
VCC = 120 V
tr @ VCC = 30 V
tr @ VCC = 120 V
t,
TIME (ns)
2000
100
200
300
500
700
20
30
50
70
0.2
0.5
1.0
2.0
5.0
10
20
0.3
3.0
30
50
100
200
IC, COLLECTOR CURRENT (mA)
Figure 9. TurnOff Time
1000
tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
IC/IB = 10
TJ = 25
C
2N5400 2N5401
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 02904
(TO226AA)
ISSUE AD
2N5400 2N5401
6
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 18004412447
6F SeibuButsuryuCenter, 3142 Tatsumi KotoKu, Tokyo 135, Japan. 0335218315
MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 2446609
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://DesignNET.com
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298
2N5400/D
*2N5400/D*
PDF 
ZIP