1
Motorola Thyristor Device Data
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions
Gate Triggering 4 Mode -- 2N6071A,B, 2N6073A,B, 2N6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted.)
Rating
Symbol
Value
Unit
*Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = 25 to 110
C)
2N6071A,B
2N6073A,B
2N6075A,B
VDRM
200
400
600
Volts
*On-State Current RMS (TC = 85
C)
IT(RMS)
4
Amps
*Peak Surge Current
(One Full cycle, 60 Hz, TJ = 40 to +110
C)
ITSM
30
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
3.7
A2s
*Peak Gate Power
PGM
10
Watts
*Average Gate Power
PG(AV)
0.5
Watt
*Peak Gate Voltage
VGM
5
Volts
*Indicates JEDEC Registered Data.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N6071/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
2N6071A,B
2N6073A,B
2N6075A,B
CASE 77-08
(TO-225AA)
STYLE 5
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
*Motorola preferred devices
MT1
G
MT2
MT1
MT2
G
MT2
*
*
*
REV 1
2N6071A,B 2N6073A,B 2N6075A,B
2
Motorola Thyristor Device Data
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
*Operating Junction Temperature Range
TJ
40 to +110
C
*Storage Temperature Range
Tstg
40 to +150
C
Mounting Torque (6-32 Screw)(1)
--
8
in. lb.
*Indicates JEDEC Registered Data.
1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200
C, for 10 seconds.
Consult factory for lead bending options.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction to Case
R
JC
3.5
C/W
Thermal Resistance, Junction to Ambient
R
JA
75
C/W
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
*Peak Blocking Current
(VD = Rated VDRM, gate open, TJ = 25
C)
(TJ = 110
C)
IDRM
--
--
--
--
10
2
A
mA
*On-State Voltage (Either Direction)
(ITM = 6 A Peak)
VTM
--
--
2
Volts
*Peak Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 40
C)
MT2(+), G(+); MT2(), G()
All Types
MT2(+), G(); MT2(), G(+)
(Main Terminal Voltage = Rated VDRM, RL = 10 k ohms,
TJ = 110
C)
MT2(+), G(+); MT2(), G()
All Types
MT2(+), G(); MT2(), G(+)
VGT
--
--
0.2
0.2
1.4
1.4
--
--
2.5
2.5
--
--
Volts
*Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open, TJ = 40
C)
(Initiating Current = 1 Adc)
2N6071A,B, 2N6073A,B, 2N6075A,B
(TJ = 25
C)
2N6071A,B, 2N6073A,B, 2N6075A,B
IH
--
--
--
--
30
15
mA
Turn-On Time (Either Direction)
(ITM = 14 Adc, IGT = 100 mAdc)
ton
--
1.5
--
s
Blocking Voltage Application Rate at Commutation
@ VDRM, TJ = 85
C, Gate Open, ITM = 5.7 A,
Commutating di/dt = 2.0 A/ms
dv/dt(c)
--
5
--
V/
s
*Indicates JEDEC Registered Data.
2N6071A,B 2N6073A,B 2N6075A,B
3
Motorola Thyristor Device Data
QUADRANT
(See Definition Below)
Type
IGT
@ TJ
I
mA
II
mA
III
mA
IV
mA
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc RL = 100 ohms)
2N6071A
2N6073A
+25
C
5
5
5
10
(Main Terminal Voltage = 12 Vdc, RL = 100 ohms)
Maximum Value
2N6073A
2N6075A
40
C
20
20
20
30
2N6071B
2N6073B
+25
C
3
3
3
5
2N6073B
2N6075B
40
C
15
15
15
20
*Indicates JEDEC Registered Data.
SENSITIVE GATE LOGIC REFERENCE
IC Logic
Firing Quadrant
IC Logic
Functions
I
II
III
IV
TTL
2N6071A
Series
2N6071A
Series
HTL
2N6071A
Series
2N6071A
Series
CMOS (NAND)
2N6071B
Series
2N6071B
Series
CMOS (Buffer)
2N6071B
Series
2N6071B
Series
Operational
Amplifier
2N6071A
Series
2N6071A
Series
Zero Voltage
Switch
2N6071A
Series
2N6071A
Series
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
QUADRANT DEFINITIONS
QUADRANT II
QUADRANT I
QUADRANT III
QUADRANT IV
MT2(+)
MT2()
MT2(+), G()
MT2(+), G(+)
MT2(), G()
MT2(), G(+)
G()
G(+)
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0 V
VEE
VEE = 5.0 V
MC7400
14
7
+
510
2N6071A
LOAD
4
115 VAC
60 Hz
2N6071A,B 2N6073A,B 2N6075A,B
4
Motorola Thyristor Device Data
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
140
120
100
80
60
40
20
0
20
40
60
0.3
0.5
0.7
1.0
2.0
2.0
3.0
0.5
0.3
0.7
1.0
120
3.0
60
40
20
0
20
40
60
80
100
140
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
TJ, JUNCTION TEMPERATURE (
C)
TJ, JUNCTION TEMPERATURE (
C)
120
90
30
dc
0
2.0
4.0
8.0
6.0
4.0
3.0
2.0
1.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
3.0
0
0
2.0
4.0
6.0
0
1.0
2.0
8.0
4.0
= 30
60
90
120
180
dc
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
80
3.0
90
70
100
0
1.0
2.0
110
4.0
60
120
dc
= CONDUCTION ANGLE
= CONDUCTION ANGLE
70
80
3.0
100
0
1.0
2.0
90
110
120
180
dc
90
= 30
= CONDUCTION ANGLE
4.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
180
= 30
90
= CONDUCTION ANGLE
60
60
T
, CASE
TEMPERA
TURE ( C)
C
T
, CASE
TEMPERA
TURE ( C)
C
P
,
A
VERAGE
POWER
(W
A
TTS)
(A
V)
V , GA
TE
TRIGGER
VOL
T
AGE
(NORMALIZED)
GTM
P
,
A
VERAGE
POWER
(W
A
TTS)
(A
V)
I , GA
TE
TRIGGER
CURRENT
(NORMALIZED)
GTM
FIGURE 1 AVERAGE CURRENT DERATING
FIGURE 2 RMS CURRENT DERATING
FIGURE 3 POWER DISSIPATION
FIGURE 5 TYPICAL GATE-TRIGGER VOLTAGE
FIGURE 4 POWER DISSIPATION
FIGURE 6 TYPICAL GATE-TRIGGER CURRENT
= 180
2N6071A,B 2N6073A,B 2N6075A,B
5
Motorola Thyristor Device Data
, TRANSIENT
THERMAL
IMPEDANCE (
FIGURE 7 MAXIMUM ON-STATE CHARACTERISTICS
FIGURE 8 TYPICAL HOLDING CURRENT
FIGURE 9 MAXIMUM ALLOWABLE SURGE CURRENT
FIGURE 10 THERMAL RESPONSE
40
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0
1.0
2.0
3.0
4.0
5.0
VTM, ON-STATE VOLTAGE (VOLTS)
TJ = 110
C
TJ = 25
C
3.0
2.0
1.0
0.7
0.5
0.3
60
40
20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (
C)
GATE OPEN
APPLIES TO EITHER DIRECTION
34
32
30
28
26
24
22
20
18
16
14
1.0
2.0
3.0
4.0
5.0
7.0
10
NUMBER OF FULL CYCLES
TJ = 40 to +110
C
f = 60 Hz
0.2
0.1
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
MAXIMUM
TYPICAL
0.1
0.2
0.5
1.0
2.0
3.0
5.0
10
0.3
t, TIME (ms)
I H
, HOLDING CURRENT
(NORMALIZED)
I TM
, ON-ST
A
TE
CURRENT
(AMP)
PEAK SINEW
A
VE
CURRENT
(AMP)
Z
JC(t)
C/W)
30
20
10
PDF 
ZIP