1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TMOS FET Transistor
NChannel -- Enhancement
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M
)
VDGR
60
Vdc
GateSource Voltage
-- Continuous
-- Nonrepetitive (tp
50
s)
VGS
VGSM
20
40
Vdc
Vpk
Drain Current
Continuous
Pulsed
ID
IDM
200
500
mAdc
Total Power Dissipation @ TC = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Operating and Storage Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
357
C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16
from case
for 10 seconds
TL
300
C
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10
Adc)
V(BR)DSS
60
--
Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125
C)
IDSS
--
--
1.0
1.0
Adc
mAdc
GateBody Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
IGSSF
--
10
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
3.0
Vdc
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
rDS(on)
--
--
5.0
6.0
Ohm
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VDS(on)
--
--
2.5
0.45
Vdc
1. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N7000/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
CASE 2904, STYLE 22
TO92 (TO226AA)
1
2
3
2N7000
Motorola Preferred Device
3 DRAIN
2
GATE
1 SOURCE
REV 3
2N7000
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1) (continued)
OnState Drain Current
(VGS = 4.5 Vdc, VDS = 10 Vdc)
Id(on)
75
--
mAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc)
gfs
100
--
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 V V
0
Ciss
--
60
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Coss
--
25
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
--
5.0
SWITCHING CHARACTERISTICS(1)
TurnOn Delay Time
(VDD = 15 V, ID = 500 mA,
ton
--
10
ns
TurnOff Delay Time
( DD
, D
,
Rgen = 25 ohms, RL = 25 ohms)
toff
--
10
1. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
I D
, DRAIN CURRENT
(AMPS)
r DS(on)
,
ST
A
TIC DRAINSOURCE ONRESIST
ANCE
(NORMALIZED)
V
GS(th)
, THRESHOLD
VOL
T
AGE
(NORMALIZED)
I D
, DRAIN CURRENT
(AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
60
20
+ 20
+ 60
+ 100
+ 140
60
20
+ 20
+ 60
+ 100
+ 140
T, TEMPERATURE (
C)
Figure 3. Temperature versus Static
DrainSource OnResistance
T, TEMPERATURE (
C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25
C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V
55
C
25
C
125
C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
2N7000
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
2N7000
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
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