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Электронный компонент: BC307

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1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC
307
BC
308C
BC
309
Unit
Collector Emitter Voltage
VCEO
45
25
25
Vdc
Collector Base Voltage
VCBO
50
30
30
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
350
2.8
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.0
8.0
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
357
C/W
Thermal Resistance, Junction to Case
R
q
JC
125
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
BC307
(IC = 2.0 mAdc, IB = 0)
BC308C
BC309B
V(BR)CEO
45
25
25
--
--
--
--
--
--
Vdc
Emitter Base Breakdown Voltage
BC307
(IE = 100
m
Adc, IC = 0)
BC308C
BC309B
V(BR)EBO
5.0
5.0
5.0
--
--
--
--
--
--
Vdc
CollectorEmitter Leakage Current
(VCES = 50 V, VBE = 0)
BC307
(VCES = 30 V, VBE = 0)
BC308C
BC309B
(VCES = 50 V, VBE = 0) TA = 125
C
BC307
(VCES = 30 V, VBE = 0) TA = 125
C
BC308C
BC309B
ICES
--
--
--
--
--
--
0.2
0.2
0.2
0.2
0.2
0.2
15
15
15
4.0
4.0
4.0
nAdc
A
Order this document
by BC307/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC307,B,C
BC308C
BC309B
CASE 2904, STYLE 17
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
BC307,B,C BC308C BC309B
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
Adc, VCE = 5.0 Vdc)
BC307B/309B
BC307C/308C
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BC307
BC308C
(IC = 100 mAdc, VCE = 5.0 Vdc)
BC307B/309B
BC307C/308C
BC307B/309B
BC307C/308C
hFE
--
--
120
120
200
420
--
--
150
270
--
--
290
500
180
300
--
--
800
800
460
800
--
--
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see Note 1)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)
--
--
--
0.10
0.30
0.25
0.3
0.6
--
Vdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VBE(sat)
--
--
0.7
1.0
--
--
Vdc
BaseEmitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.55
0.62
0.7
Vdc
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
BC307
BC308C
BC309B
fT
--
--
--
280
320
360
--
--
--
MHz
Common Base Capacitance
(VCB = 10 Vdc, IC = 0, f = 1.0 MHz)
Ccbo
--
--
6.0
pF
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc,
BC309
RS = 2.0 k
, f = 1.0 kHz)
BC307
(IC = 0.2 mAdc, VCE = 5.0 Vdc,
BC308C
RS = 2.0 k
, f = 1.0 kHz, f = 200 Hz)
BC309B
NF
--
--
--
--
2.0
2.0
2.0
2.0
4.0
10
10
4.0
dB
1. IC = 10 mAdc on the constant base current characteristic, which yields the point IC = 11 mAdc, VCE = 1.0 V.
BC307,B,C BC308C BC309B
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.2
0.3
0.5
0.7
200
0.2
0.5
1.0
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h
FE
, NORMALIZED DC CURRENT
GAIN
VCE = 10 V
TA = 25
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
IC, COLLECTOR CURRENT (mAdc)
Figure 2. "Saturation" and "On" Voltages
V
, VOL
T
AGE (VOL
TS)
TA = 25
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
IC, COLLECTOR CURRENT (mAdc)
Figure 3. CurrentGain -- Bandwidth Product
f T
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
C, CAP
ACIT
ANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
TA = 25
C
Cib
Cob
r b
, BASE SPREADING RESIST
ANCE (OHMS)
150
140
130
120
110
100
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
0.2
0.5
1.0
2.0
5.0
10
20
50
100
VCE = 10 V
TA = 25
C
0.5
1.0
2.0 3.0
5.0
10
20 30
50
0.6
1.0
2.0
4.0
6.0
10
20 30 40
1.0
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
VCE = 10 V
f = 1.0 kHz
TA = 25
C
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
VCE = 10 V
f = 1.0 kHz
TA = 25
C
0.1
0.2
0.5
1.0
2.0
5.0
10
0.01
0.03
0.05
0.1
0.3
0.5
h , OUTPUT

ADMITT
ANCE (OHMS)
ob
150
BC307,B,C BC308C BC309B
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BC307/D
*BC307/D*