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1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
32
Vdc
Collector Base Voltage
VCBO
32
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance Junction to Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 2.0 mAdc, IE = 0)
V(BR)CEO
32
--
Vdc
Emitter Base Breakdown Voltage
(IE = 1.0
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150
C)
ICES
--
--
20
20
nAdc
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
--
20
nAdc
1. FR 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW60ALT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BCW60ALT1
BCW60BLT1
BCW60DLT1
1
2
3
CASE 318 08, STYLE 6
SOT 23 (TO 236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
BCW60ALT1 BCW60BLT1 BCW60DLT1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
Adc, VCE = 5.0 Vdc)
BCW60A
BCW60B
BCW60D
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BCW60A
BCW60B
BCW60D
(IC = 50 mAdc, VCE = 1.0 Vdc)
BCW60A
BCW60B
BCW60D
hFE
20
30
100
120
175
380
60
70
100
--
--
--
220
310
630
--
--
--
--
AC Current Gain
(VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz)
BCW60A
BCW60B
BCW60D
hfe
125
175
350
250
350
700
--
Collector Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 10 mAdc, IB = 0.25 mAdc)
VCE(sat)
--
--
0.55
0.35
Vdc
Base Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 50 mAdc, IB = 0.25 mAdc)
VBE(sat)
0.7
0.6
1.05
0.85
Vdc
Base Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.6
0.75
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
125
--
MHz
Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)
Cobo
--
4.5
pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 k
, f = 1.0 kHz, BW = 200 Hz)
NF
--
6.0
dB
SWITCHING CHARACTERISTICS
TurnOn Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
ton
--
150
ns
TurnOff Time
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k
, RL = 990
)
toff
--
800
ns
Figure 1. TurnOn Time
Figure 2. TurnOff Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+ 3.0 V
275
CS < 4.0 pF*
10 k
+ 3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
0.5 V
<1.0 ns
10 < t1 < 500
s
DUTY CYCLE = 2%
+10.9 V
0
9.1 V
< 1.0 ns
t1
BCW60ALT1 BCW60BLT1 BCW60DLT1
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10
20
50
100
200
500
1 k
2 k
5 k
10 k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
RS = 0
IC = 1.0 mA
100
A
e
n
, NOISE VOL
T
AGE (nV)
I n
, NOISE CURRENT
(pA)
30
A
BANDWIDTH = 1.0 Hz
RS
10
A
300
A
IC = 1.0 mA
300
A
100
A
30
A
10
A
10
20
50
100
200
500
1 k
2 k
5 k
10 k
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 5. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (
A)
500 k
Figure 6. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (
A)
10
2.0 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESIST
ANCE (OHMS)
R
S
, SOURCE RESIST
ANCE (OHMS)
Figure 7. Wideband
IC, COLLECTOR CURRENT (
A)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESIST
ANCE (OHMS)
Noise Figure is defined as:
NF
+
20 log10
en2
)
4KTRS
)
In
2RS2
4KTRS
1 2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman's Constant (1.38 x 1023 j/
K)
= Temperature of the Source Resistance (
K)
= Source Resistance (Ohms)
en
In
K
T
RS
3.0 dB 4.0 dB
6.0 dB
10 dB
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20
30
50 70 100
200 300
500 700
1 k
10
20
30
50 70 100
200 300
500 700
1 k
500 k
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
1 M
500 k
50
100
200
500
1 k
10 k
5 k
20 k
50 k
100 k
200 k
2 k
20
30
50
70
100
200 300
500 700
1 k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
BCW60ALT1 BCW60BLT1 BCW60DLT1
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.004
h , DC CURRENT
GAIN
FE
TJ = 125
C
55
C
25
C
VCE = 1.0 V
VCE = 10 V
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 10. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V
, VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
1.6
100
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*
q
VC for VCE(sat)
q
VB for VBE
0.1
0.2
0.5
Figure 11. "On" Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.002
TJ = 25
C
IC = 1.0 mA
10 mA
100 mA
Figure 12. Temperature Coefficients
50 mA
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
I C
, COLLECT
OR CURRENT
(mA)
TA = 25
C
PULSE WIDTH = 300
s
DUTY CYCLE
2.0%
IB = 500
A
400
A
300
A
200
A
100
A
*APPLIES for IC/IB
hFE/2
25
C to 125
C
55
C to 25
C
25
C to 125
C
55
C to 25
C
40
60
0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
0.005 0.01 0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
5.0
10
15
20
25
30
35
40
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
0.8
0
1.6
0.8
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
200
100
80
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
BCW60ALT1 BCW60BLT1 BCW60DLT1
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL DYNAMIC CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
Figure 13. TurnOn Time
IC, COLLECTOR CURRENT (mA)
300
Figure 14. TurnOff Time
IC, COLLECTOR CURRENT (mA)
2.0
5.0
10
20
30
50
1000
Figure 15. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 16. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 17. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
IC, COLLECTOR CURRENT (mA)
3.0
1.0
500
0.5
10
t,
TIME (ns)
t,
TIME (ns)
f
, CURRENTGAIN BANDWIDTH PRODUCT
(MHz)
T
h , OUTPUT
ADMITT
ANCE ( mhos)
oe
m
h ie
, INPUT
IMPEDANCE (k
)
3.0
5.0
7.0
10
20
30
50
70
100
200
7.0
70
100
VCC = 3.0 V
IC/IB = 10
TJ = 25
C
td @ VBE(off) = 0.5 Vdc
tr
10
20
30
50
70
100
200
300
500
700
2.0
5.0
10
20
30
50
3.0
1.0
7.0
70 100
VCC = 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
ts
tf
50
70
100
200
300
0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
TJ = 25
C
f = 100 MHz
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0.05
TJ = 25
C
f = 1.0 MHz
Cib
Cob
2.0
5.0
10
20
50
1.0
0.2
100
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
0.1
0.2
0.5
hfe
200 @ IC = 1.0 mA
VCE = 10 Vdc
f = 1.0 kHz
TA = 25
C
2.0
5.0
10
20
50
1.0
2.0
100
3.0
5.0
7.0
10
20
30
50
70
100
200
0.1
0.2
0.5
VCE = 10 Vdc
f = 1.0 kHz
TA = 25
C
hfe
200 @ IC = 1.0 mA
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