1
Motorola Bipolar Power Transistor Device Data
Plastic Medium Power Silicon
NPN Transistor
. . . for amplifier and switching applications. Complementary types are BD438 and
BD442.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
BD437
BD441
VCEO
45
80
Vdc
CollectorBase Voltage
BD437
BD441
VCBO
45
80
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
36
288
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
3.5
_
C/W
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD437/D
Motorola, Inc. 1995
BD437
BD441
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
CASE 7708
TO225AA TYPE
REV 7
BD437 BD441
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CollectorEmitter Breakdown Voltage
(IC = 100 mA, IB = 0)
BD437
BD441
V(BR)CEO
45
80
--
--
--
--
Vdc
CollectorBase Breakdown Voltage
(IC = 100
A, IB = 0)
BD437
BD441
V(BR)CBO
45
80
--
--
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 100
A, IC = 0)
V(BR)EBO
5.0
--
--
Vdc
Collector Cutoff Current
(VCB = 45 V, IE = 0)
BD437
(VCB = 80 V, IE = 0)
BD441
ICBO
--
--
--
--
0.1
0.1
mAdc
Emitter Cutoff Current
(VEB = 5.0 V)
IEBO
--
--
1.0
mAdc
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BD437
BD441
hFE
30
15
--
--
--
--
DC Current Gain
(IC = 500 mA, VCE = 1.0 V)
BD437
BD441
hFE
85
40
--
--
375
475
DC Current Gain
(IC = 2.0 A, VCE = 1.0 V)
BD437
BD441
hFE
40
15
--
--
--
--
Collector Saturation Voltage
(IC = 2.0 A, IB = 0.2 A)
BD437
(IC = 3.0 A, IB = 0.3 A)
BD441
VCE(sat)
--
--
--
--
0.7
0.8
Vdc
BaseEmitter On Voltage
(IC = 2.0 A, VCE = 1.0 V)
VBE(on)
--
--
1.1
Vdc
CurrentGain -- Bandwidth Product
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)
fT
3.0
--
--
MHz
BD437 BD441
3
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
Figure 1. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
0
0.05
1.6
1.2
0.8
0.4
1.0
2.0
10
70
500
IC = 10 A
100 mA
1.0 A
0.1
100
20
5.0
TJ = 25
C
3.0
30
0.07
300
200
50
7.0
0.2
0.3
0.5 0.7
3.0 A
Figure 2. Current Gain
200
0
0.01
180
160
80
0.1
BD439, 441
0.02
3
0.3
0.2
1
5
2
0.5
0.03
0.05
IC, COLLECTOR CURRENT (AMP)
h
FE
, CURRENT
GAIN (NORMALIZED)
BD433, 435, 437
140
120
100
60
40
20
2.0
0.005
IC, COLLECTOR CURRENT (AMP)
1.6
1.2
0.8
0.6
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOL
T
AGE (VOL
TS)
Figure 3. "On" Voltage
0.02 0.03 0.05
0.1
0.2
VBE @ VCE = 2.0 V
0.01
0.3 0.5
1.0
2.0 3.0 4.0
Figure 4. Active Region Safe Operating Area
10
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
4.0
1.0
0.1
2.0
10
20
100
0.5
I C
, COLLECT
OR CURRENT
(AMP)
TJ = 150
C
dc
5 ms
1.0
5.0
50
SECONDARY BREAKDOWN
THERMAL LIMIT TC = 25
C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
BD437
BD441
BD437 BD441
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 7708
TO225AA TYPE
ISSUE V
STYLE 1:
PIN 1.
EMITTER
2.
COLLECTOR
3.
BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.055
1.15
1.39
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
1.02
_
_
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
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BD437/D
*BD437/D*
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