1
Motorola Thyristor Device Data
Silicon Bidirectional
Triode Thyristors
. . . designed for use in solid state relays, MPU interface, TTL logic and any other light
industrial or consumer application. Supplied in an inexpensive TO92 package which
is readily adaptable for use in automatic insertion equipment.
OnePiece, InjectionMolded Unibloc Package
Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of
Trigger Sources, and Especially for Circuits that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters
and Reliability
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage
(Gate Open, TJ = 40 to +110
C)(1)
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC974, MAC97A4
MAC976, MAC97A6
MAC978, MAC97A8
VDRM
200
400
600
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (TC = +50
C)
IT(RMS)
0.8
Amp
Peak Nonrepetitive Surge Current
(One Full Cycle, 60 Hz, TA = 110
C)
ITSM
8.0
Amps
Circuit Fusing Considerations
TJ = 40 to +110
C (t = 8.3 ms)
I2t
0.26
A2s
Peak Gate Voltage (t
v
2.0
m
s)
VGM
5.0
Volts
Peak Gate Power (t
v
2.0
m
s)
PGM
5.0
Watts
Average Gate Power (TC = 80
C, t
v
8.3 ms)
PG(AV)
0.1
Watt
Peak Gate Current (t
v
2.0
m
s)
IGM
1.0
Amp
Operating Junction Temperature Range
TJ
40 to +110
C
Storage Temperature Range
Tstg
40 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
75
C/W
Thermal Resistance, Junction to Ambient
R
JA
200
C/W
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be
tested with a constant current source such that the voltage ratings of the devices are
exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MAC97/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
MAC97,A
IMPROVED
SERIES
CASE 2904
TO226AA, STYLE 12
(TO92)
TRIACs
0.8 AMPERE RMS
200 -- 600 VOLTS
Motorola preferred devices
MT1
G
MT2
MT1
MT2
G
(Device Date Code
9625 and Up)
REV 2
MAC97,A IMPROVED SERIES
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current(1)
(VD = Rated VDRM, TJ = 110
C, Gate Open)
IRRM
--
--
0.1
mA
Peak On-State Voltage (Either Direction)
(ITM = 1.1 A Peak; Pulse Width
v
2.0 ms, Duty Cycle
v
2.0%)
VTM
--
--
1.65
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
MAC97
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
MAC97A
IGT
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
10
10
10
5.0
5.0
5.0
7.0
mA
Gate Trigger Voltage, (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 110
C)
MT2(+), G(+); MT2(), G(); MT2(+), G() All Types
MT2(), G(+) All Types
VGT
--
--
--
--
0.1
0.1
--
--
--
--
--
--
2.0
2.0
2.0
2.5
--
--
Volts
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
IH
--
--
5.0
mA
Gate Controlled TurnOn Time
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)
tgt
--
2.0
--
m
s
Critical RateofRise of Commutation Voltage
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS,
OnState Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110
C,
Gate Source Resistance = 150
W
, See Figure 13)
dv/dtc
1.5
--
--
V
/m
s
Critical RateofRise of Off State Voltage
(Vpk = Rated VDRM, TC = 110
C, Gate Open, Exponential Method)
dv/dt
10
--
--
V
/m
s
MAC97,A IMPROVED SERIES
3
Motorola Thyristor Device Data
Figure 1. RMS Current Derating
Figure 2. RMS Current Derating
Figure 3. Power Dissipation
Figure 4. OnState Characteristics
Figure 5. Transient Thermal Response
Figure 6. Maximum Allowable Surge Current
= CONDUCTION ANGLE
0.5
0.6
0.7
0.8
0.1
0.2
0.3
0.4
0
110
100
90
80
70
60
IT(RMS), RMS ONSTATE CURRENT (AMPS)
= CONDUCTION ANGLE
0.25
0.3
0.35
0.4
0.05
0.1
0.15
0.2
0
90
80
70
60
50
40
IT(RMS), RMS ONSTATE CURRENT (AMPS)
30
20
0.4
0.5
0.6
0.7
0
0.1
0.2
0.3
0.6
0.4
0.2
0
IT(RMS), RMS ONSTATE CURRENT (AMPS)
0.1
1.0
10
100
1.0
t, TIME (ms)
0.1
0.01
0.8
1
S
103
1
S
104
3.0
30
50
1.0
2.0
100
3.0
2.0
1.0
NUMBER OF CYCLES
5.0
10
T
, MAXIMUM
ALLOW
ABLE CASE
TEMPERA
TURE ( C)
C
T
= 30
60
90
DC
180
120
Z
Q
JC(t) = R
Q
JC(t)
@
r(t)
50
40
30
100
110
2.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
4.5
10
1.0
0.1
0.01
VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)
5.0
I , INST
ANT
ANEOUS ONST
A
TE CURRENT
(AMPS)
T
TYPICAL @ TJ = 25
C
MAXIMUM @ TJ = 25
C
MAXIMUM @ TJ = 110
C
= CONDUCTION ANGLE
10
5.0
0.8
1.0
1.2
Surge is preceded and followed by rated current.
TJ = 110
C
f = 60 Hz
CYCLE
MAXIMUM @ TJ = 110
C
T
= 30
60
90
DC
180
120
, MAXIMUM
ALLOW
ABLE
AMBIENT
TEMPERA
TURE ( C)
T(RMS)I
P
, MAXIMUM
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
(A
V)
I , PEAK SURGE CURRENT
(AMPS)
TSM
R ,
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
(t)
MAC97,A IMPROVED SERIES
4
Motorola Thyristor Device Data
Figure 7. Typical Holding Current Variation
Figure 8. Typical Gate Trigger Current
Variation
Figure 9. Gate Trigger Voltage Variation
Figure 10. Exponential Static dv/dt versus
Gate MT1 Resistance
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature
Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
6.0
4.0
2.0
0
TJ, JUNCTION TEMPERATURE (
C)
10
1.0
TJ, JUNCTION TEMPERATURE (
C)
0.1
40
20
1.1
0.9
0.7
0.5
0.3
TJ, JUNCTION TEMPERATURE (
C)
10
100
1000
40
RGK, GATE MT1 RESISTANCE (OHMS)
30
20
10,000
1.0
10
1.0
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
10
TJ, JUNCTION TEMPERATURE (
C)
40
60
80
40
20
0
20
100 110
40
60
80
40
20
0
20
100 110
0
20
40
60
80
100
50
60
60
70
10
1.0
80
90
100
110
I , HOLDING CURRENT
(mA)
H
I , GA
TE
TRIGGER CURRENT
(mA)
GT
ST
A
TIC dv/dt (V/ S)
VDRM = 200 V
400 Hz
600 Vpk
TJ = 110
C
Q2
Q1
(di dt)
c
+
6f I
TM
1000
tw
VDRM
5.0
3.0
1.0
300 Hz
180 Hz
60 Hz
MAIN TERMINAL
#2 NEGATIVE
MAIN TERMINAL
#2 POSITIVE
Q4
Q3
MAIN TERMINAL
#2 NEGATIVE
MAIN TERMINAL
#2 POSITIVE
Q2
Q1
Q4
Q3
ITM
f
+
1
2t
w
100
C
110
C
80
C
60
C
COMMUT
A
TING dv/dt
dv/dt , (V/ S)
c
m
COMMUT
A
TING dv/dt
dv/dt , (V/ S)
c
m
V , GA
TE
TRIGGER VOL
T
AGE (VOL
TS)
GT
m
MAC97,A IMPROVED SERIES
5
Motorola Thyristor Device Data
Figure 13. Simplified Q1 (dv/dt)c Test Circuit
1N4007
200 V
0.047 CS
ADJUST FOR
dv/dt(c)
56
RS
CS
80 mHY
LL
MEASURE
I
1N914
2
75 VRMS
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
CONTROL
5
m
F
NONPOLAR
CL
1
51
G
TRIGGER CONTROL
CHARGE
TRIGGER
NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
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