1
Rectifier Device Data
Surface Mount
Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area metaltosilicon
power diode. Stateoftheart geometry features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical to the
system.
Small Compact Surface Mountable Package with JBend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25
C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260
C
Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
Marking: B140
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
Volts
Average Rectified Forward Current
TL = 115
C
IF(AV)
1.0
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
40
Amps
Operating Junction Temperature
TJ
65 to +125
C
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Lead
(TL = 25
C)
R
JL
12
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 A, TJ = 25
C)
VF
0.6
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25
C)
(Rated dc Voltage, TJ = 100
C)
iR
1.0
10
mA
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MBRS140T3/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBRS140T3
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE
40 VOLTS
CASE 403A03
Motorola Preferred Device
Rev 2
MBRS140T3
2
Rectifier Device Data
i F
, INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
1
0.5
0.2
0.1
0.05
0.03
0.02
1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
I R
, REVERSE CURRENT
(mA)
100
10
1
0.1
0.01
0
4
8
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
TJ = 125
C
25
C
I F(A
V)
, A
VERAGE
FOR
W
ARD
CURRENT
(AMPS)
8
7
6
5
4
3
2
1
0
50
60
70
80
90
100
110
120
130
TC, CASE TEMPERATURE (
C)
SQUARE WAVE
DC
TJ = 125
C
P
F(A
V)
,
A
VERAGE POWER DISSIP
A
TION
(W
A
TTS) 5
4
3
2
1
0
0
1
2
3
4
5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
20
10
5
DC
IPK
IAV
=
SQUARE
WAVE
RATED VOLTAGE APPLIED
R
JC = 12
C/W
TJ = 125
C
C, CAP
ACIT
ANCE
(pF)
160
140
120
100
80
60
40
20
0
0
4
8
12
16
20
24
28
32
VR, REVERSE VOLTAGE (VOLTS)
20
2
0.2
0.02
30
3
0.3
0.03
50
5
0.5
0.05
36
40
180
200
40
30
9
10
CAPACITANCE
LOAD
0.7
0.07
0.3
0.8
0.9
1.1
TC = 100
C
TC = 25
C
100
C
75
C
NOTE: TYPICAL CAPACITANCE
AT 0 V = 160 pF
Figure 3. Typical Capacitance
Figure 4. Current Derating (Case)
Figure 5. Power Dissipation
MBRS140T3
3
Rectifier Device Data
PACKAGE DIMENSIONS
CASE 403A03
ISSUE B
A
S
D
B
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.160
0.180
4.06
4.57
B
0.130
0.150
3.30
3.81
C
0.075
0.095
1.90
2.41
D
0.077
0.083
1.96
2.11
H
0.0020
0.0060
0.051
0.152
J
0.006
0.012
0.15
0.30
K
0.030
0.050
0.76
1.27
P
0.020 REF
0.51 REF
S
0.205
0.220
5.21
5.59
MBRS140T3
4
Rectifier Device Data
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