1
Motorola Thyristor Device Data
Thyristors
Silicon Controlled Rectifiers
. . . designed for back-to-back SCR output devices for solid state relays or applications
requiring high surge operation.
Photo Glass Passivated Blocking Junctions for High Temperature Stability,
Center Gate for Uniform Parameters
400 Amperes Surge Capability
Blocking Voltage to 800 Volts
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125
C, Gate Open)
MCR264-4
MCR264-6
MCR264-8
MCR264-10
VDRM
VRRM
200
400
600
800
Volts
Forward Current (TC = 80
C)
(All Conduction Angles)
IT(RMS)
IT(AV)
40
25
Amps
Peak Non-repetitive Surge Current 8.3 ms
(1/2 Cycle, Sine Wave)
1.5 ms
ITSM
400
450
Amps
Forward Peak Gate Power
PGM
20
Watts
Forward Average Gate Power
PG(AV)
0.5
Watt
Forward Peak Gate Current
(300
s, 120 PPS)
IGM
2
Amps
Operating Junction Temperature Range
TJ
40 to +125
C
Storage Temperature Range
Tstg
40 to +150
C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when
the device is to be used at high sustained currents.
REV 1
Order this document
by MCR264-4/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
MCR264 4
thru
MCR264 10
CASE 221A-04
(TO-220AB)
STYLE 3
SCRs
40 AMPERES RMS
200 thru 800 VOLTS
K
G
A
MCR264 4 thru MCR264 10
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1
C/W
Thermal Resistance, Junction to Ambient
R
JA
60
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25
C
TJ = 125
C
IDRM, IRRM
--
--
--
--
10
2
A
mA
Forward "On" Voltage(1)
(ITM = 80 A)
VTM
--
1.4
2
Volts
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = 40
C)
IGT
--
--
15
30
50
90
mA
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
VGT
--
1
1.5
Volts
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125
C)
VGD
0.2
--
--
Volts
Holding Current
(Anode Voltage = 12 Vdc)
IH
--
30
60
mA
Turn-On Time
(ITM = 40 A, IGT = 60 mAdc)
tgt
--
1.5
--
s
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
dv/dt
--
50
--
V/
s
1. Pulse Test: Pulse Width
p
300
s, Duty Cycle
p
2%.
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
75
85
95
105
115
dc
FIGURE 1 -- AVERAGE CURRENT DERATING
90
60
5.0
= 30
10
0
125
15
20
25
= CONDUCTION ANGLE
10
0
FIGURE 2 -- MAXIMUM ON-STATE POWER DISSIPATION
IT(AV), ON-STATE FORWARD CURRENT (AMPS)
180
0
15
20
25
30
35
40
45
5.0
= CONDUCTIVE ANGLE
20
25
10
15
50
5.0
= 30
60
90
180
dc
P
,
A
VERAGE POWER (W
A
TTS)
(A
V)
T
, MAXIMUM CASE
TEMPERA
TURE ( C)
C
MCR264 4 thru MCR264 10
3
Motorola Thyristor Device Data
FIGURE 5 -- HOLDING CURRENT
1 k
10 k
5 k
500
20
300
2 k
3 k
200
5.0
3.0
2.0
1.0
30
10
50
100
0.5
0.3
0.02
0.01
0.03
0.05
0.07
0.2
0.1
10
20
30
50
70
0.7
0.3
0.5
140
120
100
80
60
40
0.2
40
20
0
20
2.0
1.8
1.6
0.5
0.6
0.7
0.8
1.0
0.9
1.1
0.2
0.4
0.6
0.8
20
140
120
40
1.0
1.2
100
80
20
0
60
40
20
5.0
10
1.4
60
7.0
100
80
4.0
140
40
60
40
120
20
0
40
20
FIGURE 6 -- TYPICAL FORWARD VOLTAGE
0.1
t, TIME (ms)
1.0
FIGURE 7 -- THERMAL RESPONSE
Z
JC(t) = R
JC
r(t)
TJ, JUNCTION TEMPERATURE (
C)
OFF-STATE VOLTAGE = 12 V
7.0
60
0
1.0
10
100
vF, INSTANTANEOUS VOLTAGE (VOLTS)
TJ = 25
C
0.4
OFF-STATE VOLTAGE = 12 V
FIGURE 4 -- NEW GATE TRIGGER VOLTAGE
TJ, JUNCTION TEMPERATURE (
C)
FIGURE 3 -- GATE TRIGGER CURRENT
OFF-STATE VOLTAGE = 12 V
TJ, JUNCTION TEMPERATURE (
C)
60
I , GA
TE
TRIGGER CURRENT
(mA)
GT
V , GA
TE
TRIGGER VOL
T
AGE (VOL
TS)
GT
I , HOLDING CURRENT
(mA)
H
I , INST
ANT
ANEOUS FOR
W
ARD CURRENT
(AMPS)
F
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
MCR264 4 thru MCR264 10
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221A-04
(TO220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.014
0.022
0.36
0.55
K
0.500
0.562
12.70
14.27
L
0.045
0.055
1.15
1.39
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
A
K
L
V
G
D
N
Z
H
Q
F
B
1
2
3
4
T
SEATING
PLANE
S
R
J
U
T
C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MCR264/D
*MCR264/D*
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