1
Motorola Bipolar Power Transistor Device Data
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain -- hFE = 4000 (Typ) @ IC = 5.0 Adc
Monolithic Construction with Builtin BaseEmitter Shunt Resistors
MAXIMUM RATINGS
Rating
Symbol
MJ2500
MJ3000
MJ2501
MJ3001
Unit
CollectorEmitter Voltage
VCEO
60
80
Vdc
CollectorBase Voltage
VCB
60
80
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
0.2
Adc
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
150
0.857
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
1.17
_
C/W
Figure 1. Darlington Circuit Schematic
NPN
MJ3000
MJ3001
BASE
COLLECTOR
EMITTER
[
2.0 k
[
50
PNP
MJ2500
MJ2501
BASE
COLLECTOR
EMITTER
[
2.0 k
[
50
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ2500/D
MJ2955 (See 2N3055)
MJ2955A
(See 2N3055A)
Motorola, Inc. 1995
*
*Motorola Preferred Device
PNP
CASE 107
TO204AA
(TO3)
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 80 VOLTS
150 WATTS
MJ2500
MJ2501
MJ3000
MJ3001
NPN
*
REV 7
MJ2500 MJ2501 MJ3000 MJ3001
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
MJ2500, MJ3000
(IC = 100 mAdc, IB = 0)
MJ2501, MJ3001
V(BR)CEO
60
80
--
--
Vdc
CollectorEmitter Leakage Current
(VEB = 60 Vdc, RBE = 1.0 k ohm)
MJ2500, MJ3000
(VEB = 80 Vdc, RBE = 1.0 k ohm)
MJ2501, MJ3001
(VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150
_
C)
MJ2500, MJ3000
(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150
_
C)
MJ2501, MJ3001
ICER
--
--
--
--
1.0
1.0
5.0
5.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
--
2.0
mAdc
Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
MJ2500, MJ3000
(VCE = 40 Vdc, IB = 0)
MJ2501, MJ3001
ICEO
--
--
1.0
1.0
mAdc
ON CHARACTERISTICS(1)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
hFE
1000
--
--
CollectorEmitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
VCE(sat)
--
--
2.0
4.0
Vdc
Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc)
VBE(on)
--
3.0
Vdc
(1)Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
10
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
VCE = 3.0 Vdc
500
200
100
50,000
5000
20,000
2000
1000
10,000
5.0
Figure 3. SmallSignal Current Gain
f, FREQUENCY (Hz)
500
300
100
3000
h
FE
, SMALLSIGNAL
CURRENT
GAIN
200
2000
1000
30
50
TC = 25
C
VCE = 3.0 Vdc
IC = 5.0 Adc
104
103
105
106
50
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V
, VOL
T
AGE (VOL
TS)
Figure 4. "On" Voltages
VCE(sat) @ IC/IB = 250
TJ = 25
C
VBE @ VCE = 3.0 V
0.01
0.2
0.5
0.05
1.0
2.0
10
5.0
3.5
2.5
2.0
1.5
1.0
0
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25
C
BONDING WIRE LIMITED
10
1.0
Figure 5. DC Safe Operating Area
7.0
2.0
10
20
100
TJ = 200
C
0.2
3.0
0.5
I C
, COLLECT
OR CURRENT
(AMP)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
5.0
30
70
1.0
0.1
2.0
50
3.0
5.0 7.0
MJ2500, MJ3000
MJ2501, MJ3001
0.5
3.0
0.1
0.02
0.7
0.3
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate IC VCE limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
MJ2500 MJ2501 MJ3000 MJ3001
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
1.050
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.830
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
MJ2500 MJ2501 MJ3000 MJ3001
4
Motorola Bipolar Power Transistor Device Data
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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
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MJ2500/D
*MJ2500/D*
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