1
Motorola Bipolar Power Transistor Device Data
High-Current Complementary
Silicon Power Transistors
. . . designed for use in highpower amplifier and switching circuit applications,
High Current Capability -- IC Continuous = 60 Amperes
DC Current Gain -- hFE = 15100 @ IC = 50 Adc
Low CollectorEmitter Saturation Voltage --
VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc
MAXIMUM RATINGS
Rating
Symbol
MJ14001
MJ14002
MJ14003
Unit
CollectorEmitter Voltage
VCEO
60
80
Vdc
Collector Base Voltage
VCBO
60
80
Vdc
EmitterBase Voltage
VEBO
5
Vdc
Collector Current -- Continuous
IC
60
Adc
Base Current -- Continuous
IB
15
Adc
Emitter Current -- Continuous
IE
75
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
300
17
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.584
_
C/W
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
40
80
120
240
360
90
P
D
, POWER DISSIP
A
TION (W
A
TTS)
210
0
160
200
0
30
270
330
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ14001/D
Motorola, Inc. 1995
MJ14002
MJ14001
MJ14003
*Motorola Preferred Device
60 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSITORS
60 80 VOLTS
300 WATTS
*
NPN
PNP
*
CASE 197A05
TO204AE (TO3)
REV 2
MJ14002 MJ14001 MJ14003
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
MJ14001
MJ14002, MJ14003
VCEO(sus)
60
80
--
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
MJ14001
(VCE = 40 Vdc, IB = 0)
MJ14402, MJ14003
ICEO
--
--
1.0
1.0
mA
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 V)
MJ14001
(VCE = 80 Vdc, VBE(off) = 1.5 V)
MJ14002, MJ14003
ICEX
--
--
1.0
1.0
mA
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
MJ14001
(VCB = 80 Vdc, IE = 0)
MJ14002, MJ14003
ICBO
--
--
1.0
1.0
mA
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
--
1.0
mA
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 25 Adc, VCE = 3.0 V)
(IC = 50 Adc, VCE = 3.0 V)
(IC = 60 Adc, VCE = 3.0 V)
hFE
30
15
5
--
100
--
--
CollectorEmitter Saturation Voltage (1)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 5.0 Adc)
(IC = 60 Adc, IB = 12 Adc)
VCE(sat)
--
--
--
1
2.5
3
Vdc
BaseEmitter Saturation Voltage (1)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 5.0 Adc)
(IC = 60 Adc, IB = 12 Adc)
VBE(sat)
--
--
--
2
3
4
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
--
2000
pF
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2%.
100
Figure 2. Maximum Rated Forward Biased
Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1.0
2.0 3.0
5.0
7.0
100
20
3.0
10
20
50
0.5
0.1
dc
I C
, COLLECT
OR CURRENT
(AMP)
1.0
s
1.0 ms
0.2
0.3
0.7
1.0
2.0
5.0
7.0
10
50
30
70
70
30
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25
C
5.0 ms
MJ14001
MJ14002, MJ14003
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
200
_
C. TJ(pk) may be calculated from the data in Fig-
ure 13. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJ14002 MJ14001 MJ14003
3
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
300
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.7 1.0
2.0
3.0
20
200
30
h
FE
, DC CURRENT
GAIN
VCE = 3.0 V
100
7.0
5.0
10
3.0
5.0
10
20
70
50
Figure 4. DC Current Gain
2.8
0.1
IB, BASE CURRENT (AMPS)
1.0
10
TJ = 25
C
5.0
3.0
2.0
0.5
2.0
1.2
0.8
0.4
7.0
30
50
70
0
1.6
2.4
7.0
0.7
0.3
0.2
300
Figure 5. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
0.7 1.0
2.0
3.0
20
200
30
h
FE
, DC CURRENT
GAIN
100
7.0
5.0
10
3.0
5.0
10
20
70
50
Figure 6. Collector Saturation Region
2.8
0.1
IB, BASE CURRENT (AMPS)
1.0
10
5.0
3.0
2.0
0.5
2.0
1.2
0.8
0.4
7.0
30
50
70
0
1.6
2.4
7.0
0.7
0.3
0.2
IC = 60 A
TJ = 25
C
NPN
MJ14002
PNP
MJ14001, MJ14003
2.8
0.7
IC, COLLECTOR CURRENT (AMPS)
10
V
, VOL
T
AGE (VOL
TS)
TJ = 25
C
50
30
20
5.0
2.0
1.2
0.8
0.4
0
1.6
2.4
70
7.0
2.0
1.0
Figure 7. "On" Voltages
VBE(sat) @ IC/IB = 10
3.0
VBE(on) @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
2.8
0.7
IC, COLLECTOR CURRENT (AMPS)
10
V
, VOL
T
AGE (VOL
TS)
TJ = 25
C
50
30
20
5.0
2.0
1.2
0.8
0.4
0
1.6
2.4
70
7.0
2.0
1.0
Figure 8. "On" Voltages
3.0
TJ = 55
C
TJ = 25
C
TJ = 150
C
VCE = 3.0 V
TJ = 55
C
TJ = 25
C
TJ = 150
C
IC = 25 A
IC = 10 A
IC = 60 A
IC = 25 A
IC = 10 A
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
TYPICAL ELECTRICAL CHARACTERISTICS
MJ14002 MJ14001 MJ14003
4
Motorola Bipolar Power Transistor Device Data
Figure 9. TurnOn Switching Times
Figure 10. TurnOff Switching Times
Figure 11. Capacitance Variation
Figure 12. Switching Test Circuit
4.0
IC, COLLECTOR CURRENT (AMPS)
0.04
2.0
1.0
0.3
tr
3.0
0.7
0.1
0.07
C, CAP
ACIT
ANCE (pF)
5000
3000
10000
2.0
3.0
7.0
100
20
1.0
2000
1000
700
500
300
200
100
5.0
10
50
VR, REVERSE VOLTAGE (VOLTS)
t, TIME (ms)
1.0
0.01
0.02
0.1
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
2.0
10
100
R
JC(t) = r(t) R
JC
R
JC = 0.584
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
SINGLE PULSE
1000
D = 0.5
0.5
0.2
0.07
DUTY CYCLE, D = t1/t2
Figure 13. Thermal Response
t,
TIME (
s)
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
3.0
7.0
5.0
0.5
0.3
1.0
0.2
0.1
0.07
0.05
0.03
0.02
0.01
t,
TIME (
s)
0.7
0.7
10
20
30
70
50
1.0
2.0
3.0
7.0
5.0
0.7
10
20
30
70
50
0.2
0.5
Cob
7000
30
70
0.02
0.03
0.05
0.7
0.3
0.03
0.05
0.07
1.0
5.0
3.0
2000
200 300
500 700
20 30
50 70
7.0
0.2
0.1
0.5
0.3
0.7
0.05
0.2
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
td
ts
tf
TJ = 25
C
Cib
Cib
Cob
+ 2.0 V
0
tr
20 ns
12 V
10 to 100
s
DUTY CYCLE
2.0%
VCC 30 V
TO SCOPE
tr
20 ns
RL
RB
VCC 30 V
RL
RB
TO SCOPE
tr
20 ns
VBB
+ 7.0 V
+10
V
0
12 V
10 to 100
s
tr
20 ns
DUTY CYCLE
2.0%
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
0.1
0.02
0.01
MJ14002 MJ14001 MJ14003
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 197A05
TO204AE (TO3)
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.530 REF
38.86 REF
B
0.990
1.050
25.15
26.67
C
0.250
0.335
6.35
8.51
D
0.057
0.063
1.45
1.60
E
0.060
0.070
1.53
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.760
0.830
19.31
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.30 (0.012)
Y
M
T
M
Y
M
0.25 (0.010)
T
Q
Y
2
1
L
G
B
V
H
U
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