1
Motorola Bipolar Power Transistor Device Data
High-Power PNP Silicon
Transistor
. . . for use as an output device in complementary audio amplifiers to 100Watts
music power per channel.
High DC Current Gain -- hFE = 25100 @ IC = 7.5 A
Excellent Safe Operating Area
Complement to the NPN MJ802
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCER
100
Vdc
CollectorBase Voltage
VCB
100
Vdc
CollectorEmitter Voltage
VCEO
90
Vdc
EmitterBase Voltage
VEB
4.0
Vdc
Collector Current
IC
30
Adc
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
200
1.14
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to + 200
_
C
MAXIMUM RATINGS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
0.875
_
C/W
200
150
50
0
0
20
40
60
80
100
120
140
160
180
200
Figure 1. PowerTemperature Derating Curve
TC, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
100
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ4502/D
Motorola, Inc. 1995
MJ4502
30 AMPERE
POWER TRANSISTOR
PNP SILICON
100 VOLTS
200 WATTS
CASE 107
TO204AA
(TO3)
REV 7
MJ4502
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1) (IC = 200 mAdc, RBE = 100 Ohms)
V(BR)CER
100
--
Vdc
CollectorEmitter Sustaining Voltage(1) (IC = 200 mAdc)
VCEO(sus)
90
--
Vdc
CollectorBase Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TC = 150
_
C)
ICBO
--
--
1.0
5.0
mAdc
EmitterBase Cutoff Current (VBE = 4.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 7.5 Adc, VCE = 2.0 Vdc)
hFE
25
100
--
BaseEmitter "On" Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)
VBE(on)
--
1.3
Vdc
CollectorEmitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
VCE(sat)
--
0.8
Vdc
BaseEmitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
VBE(sat)
--
1.3
Vdc
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
--
MHz
(1)Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
3.0
0.03
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.1
0.05
0.1
0.2 0.3
3.0 5.0
30
1.0
0.5
0.3
0.2
2.0
IC, COLLECTOR CURRENT (AMP)
1.4
0.8
0.6
0.4
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
"ON" VOL
T
AGE (VOL
TS)
Figure 3. "On" Voltages
2.0
0.7
h
FE
, NORMALIZED CURRENT
GAIN
TJ = 175
C
25
C
55
C
VCE = 2.0 V
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF ICBO.
0.5
1.0
2.0
20
10
VBE @ VCE = 2.0 V
0.2
1.0
1.2
1.8
1.6
0.03 0.05
0.1
0.2 0.3
3.0 5.0
30
0.5
1.0
2.0
20
10
Figure 4. Active Region Safe Operating Area
100
0.1
50
20
10
5.0
2.0
1.0
0.5
0.2
1.0
2.0
3.0
5.0
10
20
30
50
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS @ TC = 25
C
PULSE DUTY CYCLE
v
10%
I C
, COLLECT
OR CURRENT
(AMP)
TJ = 200
C
dc
5.0 ms
1.0 ms
100
s
The Safe Operating Area Curves indicate IC VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, powertemperature
derating must be observed for both steady state and pulse
power conditions.
MJ4502
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
1.050
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.830
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
MJ4502
4
Motorola Bipolar Power Transistor Device Data
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