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1
Motorola Bipolar Power Transistor Device Data
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("1" Suffix)
Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
Surface Mount Replacements for TIP110TIP117 Series
Monolithic Construction With Builtin BaseEmitter Shunt Resistors
High DC Current Gain -- hFE = 2500 (Typ) @ IC = 2.0 Adc
Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
Rating
Symbol
MJD112
MJD117
Unit
CollectorEmitter Voltage
VCEO
100
Vdc
CollectorBase Voltage
VCB
100
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current -- Continuous
Peak
IC
2
4
Adc
Base Current
IB
50
mAdc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
20
0.16
Watts
W/
_
C
Total Power Dissipation* @ TA = 25
_
C
Derate above 25
_
C
PD
1.75
0.014
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
6.25
_
C/W
Thermal Resistance, Junction to Ambient*
R
JA
71.4
_
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
100
--
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
--
20
Adc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
--
20
Adc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
--
2
mAdc
* These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD112/D
Motorola, Inc. 1995
MJD112
MJD117
CASE 369A13
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS
20 WATTS
*Motorola Preferred Device
CASE 36907
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.243
6.172
0.063
1.6
0.1
18
3.0
0.07
1.8
0.165
4.191
0.190
4.826
inches
mm
*
NPN
PNP
*
REV 1
MJD112 MJD117
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS continued
CollectorCutoff Current
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125
_
C)
ICEX
--
--
10
500
Adc
CollectorCutoff Current (VCB = 80 Vdc, IE = 0)
ICBO
--
10
Adc
EmitterCutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
--
2
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
hFE
500
1000
200
--
12,000
--
--
CollectorEmitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
VCE(sat)
--
--
2
3
Vdc
BaseEmitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)
VBE(sat)
--
4
Vdc
BaseEmitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)
VBE(on)
--
2.8
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
25
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD117
MJD112
Cob
--
--
200
100
pF
* Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2%.
0.04
0.2
4
0.1
0.06
0.6
1
4
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
t,
TIME (
s)
2
1
0.8
0.6
0.4
0.2
ts
tf
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
V2
APPROX
+ 8 V
0
8 k
SCOPE
VCC
30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25
s
tr, tf
10 ns
DUTY CYCLE = 1%
+ 4 V
tr
td @ VBE(off) = 0 V
PNP
NPN
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
V1
APPROX
12 V
TUT
RB
D1
60
0.4
2
IB1 = IB2
TJ = 25
C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MJD112 MJD117
3
Motorola Bipolar Power Transistor Device Data
Figure 3. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1
0.01
1000
0.3
0.2
0.07
r(t)
, EFFECTIVE
TRANSIENT
R
JC(t) = r(t) R
JC
R
JC = 6.25
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
THERMAL
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.1
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.01
I C
, COLLECT
OR CURRENT
(AMP)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
2
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5
20
3
TJ = 150
C
CURVES APPLY BELOW RATED VCEO
100
s
1 ms
dc
0.1
1
3
7
10
10
7
30
25
25
T, TEMPERATURE (
C)
0
50
75
100
125
150
20
15
10
5
P
D
, POWER DISSIP
A
TION (W
A
TTS)
2.5
0
2
1.5
1
0.5
TA TC
TA
SURFACE
MOUNT
TC
0.7
5 ms
50
70
200
500
s
ACTIVEREGION SAFEOPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150
_
C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_
C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
C, CAP
ACIT
ANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1
4
10
40
TC = 25
C
200
10
50
70
100
0.1
2
6
20
20
PNP
NPN
0.6
0.4
0.2
0.06
Figure 6. Capacitance
Cob
MJD112 MJD117
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
IC, COLLECTOR CURRENT (AMP)
NPN MJD112
PNP MJD117
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
Figure 9. "On Voltages
0.04
IC, COLLECTOR CURRENT (AMP)
300
0.06
0.2
2 k
800
4 k
h
FE
, DC CURRENT
GAIN
VCE = 3 V
TJ = 125
C
3 k
0.1
0.6
25
C
55
C
1 k
0.4
1
6 k
400
600
2
4
0.04
300
0.06
0.2
2 k
800
4 k
h
FE
, DC CURRENT
GAIN
3 k
0.1
0.6
25
C
55
C
1 k
0.4
1
6 k
400
600
2
4
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
2
5
IC =
0.5 A
1 A
1
3
1
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1
V
, VOL
T
AGE (VOL
TS)
2.2
1.8
0.6
0.2
TJ = 25
C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3 V
VCE(sat) @ IC/IB = 250
0.06
0.2
2
0.1
0.6
0.4
1
4
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1
V
, VOL
T
AGE (VOL
TS)
2.2
1.8
0.6
0.2
TJ = 25
C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.06
0.2
2
0.1
0.6
0.4
1
4
20
50
100
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
2
5
1
3
1
20
50
100
VBE @ VCE = 3 V
TC = 125
C
VCE = 3 V
4 A
TJ = 125
C
2 A
TJ = 125
C
IC =
0.5 A
1 A
4 A
2 A
TYPICAL ELECTRICAL CHARACTERISTICS
MJD112 MJD117
5
Motorola Bipolar Power Transistor Device Data
NPN MJD112
PNP MJD117
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0
*APPLIED FOR IC/IB < hFE/3
0.1
0.6
55
C TO 25
C
0.4
1
4.8
2
4
104
VBE, BASEEMITTER VOLTAGE (VOLTS)
101
0
0.4
, COLLECT
OR CURRENT
(
A)
I C
103
102
101
100
+ 0.2 + 0.4 + 0.6
TJ = 150
C
100
C
REVERSE
FORWARD
25
C
VCE = 30 V
105
0.6
0.2
+ 0.8
+ 1
+ 1.2 + 1.4
104
VBE, BASEEMITTER VOLTAGE (VOLTS)
101
0
+ 0.4
, COLLECT
OR CURRENT
(
A)
I C
103
102
101
100
0.2 0.4 0.6
105
+ 0.6
+ 0.2
0.8
1
1.2 1.4
+ 0.8
4
3.2
2.4
1.6
0.8
VC FOR VBE
25
C TO 150
C
25
C TO 150
C
*
VC FOR VCE(sat)
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0.1
0.6
0.4
1
2
4
Figure 10. Temperature Coefficients
Figure 11. Collector CutOff Region
Figure 12. Darlington Schematic
BASE
EMITTER
COLLECTOR
8 k
120
PNP
BASE
EMITTER
COLLECTOR
8 k
120
NPN
0
4.8
+ 0.8
4
3.2
2.4
1.6
0.8
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
55
C TO 25
C
*APPLIES FOR IC/IB < hFE/3
*
VC FOR VCE(sat)
VB FOR VBE
25
C TO 150
C
55
C TO 25
C
25
C TO 150
C
55
C TO 25
C
VCE = 30 V
REVERSE
FORWARD
TJ = 150
C
100
C
25
C
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