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1
Motorola Bipolar Power Transistor Device Data
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("1" Suffix)
Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
High Current GainBandwidth Product -- fT = 2.0 MHz (Min) @ IC = 500 mAdc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
60
Vdc
CollectorBase Voltage
VCB
70
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
20
0.16
Watts
W/
_
C
Total Power Dissipation (1) @ TA = 25
_
C
Derate above 25
_
C
PD
1.75
0.014
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
6.25
_
C/W
Thermal Resistance, Junction to Ambient (1)
R
JA
71.4
_
C/W
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD2955/D
Motorola, Inc. 1995
MJD2955
MJD3055
CASE 369A13
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS
20 WATTS
CASE 36907
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.243
6.172
0.063
1.6
0.1
18
3.0
0.07
1.8
0.165
4.191
0.190
4.826
inches
mm
NPN
PNP
REV 1
MJD2955 MJD3055
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
60
--
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ICEO
--
50
Adc
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150
_
C)
ICEX
--
--
0.02
2
mAdc
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150
_
C)
ICBO
--
--
0.02
2
mAdc
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
--
0.5
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 10 Adc, VCE = 4 Vdc)
hFE
20
5
100
--
--
CollectorEmitter Saturation Voltage (1)
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
--
--
1.1
8
Vdc
BaseEmitter On Voltage (1)
(IC = 4 Adc, VCE = 4 Vdc)
VBE(on)
--
1.8
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
2
--
MHz
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2%.
MJD2955 MJD3055
3
Motorola Bipolar Power Transistor Device Data
V
, VOL
T
AGE (VOL
TS)
t,
TIME (
s)
5
3
2
1
0.5
0.3
0.7
0.2
500
300
200
100
30
20
50
IC, COLLECTOR CURRENT (AMP)
2
0.5
0.3
IC, COLLECTOR CURRENT (AMP)
0.2
Figure 1. Power Derating
Figure 2. DC Current Gain
0.01
0.02
0.05
1
10
2
5
0.1
Figure 3. TurnOn Time
Figure 4. "On" Voltages, MJD3055
TJ = 25
C
tr
TJ = 150
C
55
C
25
C
1
0.7
0.2
IC, COLLECTOR CURRENT (AMP)
0.2
1
6
0.6
2
0.06
0.4
4
IC, COLLECTOR CURRENT (AMP)
0.1
0.2 0.3
1
10
2
5
0.5
3
Figure 5. TurnOff Time
h
FE
, DC CURRENT
GAIN
VCE = 2 V
10
5
0.5
25
25
T, TEMPERATURE (
C)
0
50
75
100
125
150
20
15
10
5
P
D
, POWER DISSIP
A
TION (W
A
TTS)
2.5
0
2
1.5
1
0.5
TA TC
TC
TA
SURFACE
MOUNT
ts
1.4
0.8
0.6
0
1.2
1
0.4
0.2
TJ = 25
C
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
VCC = 30 V
IC/IB = 10
0.05
0.03
0.02
0.1
0.07
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
0.1
0.05
0.07
0.1
td @ VBE(off)
5 V
0.2
1
6
0.6
2
0.06
0.4
4
0.1
t,
TIME (
s)
tf
TYPICAL CHARACTERISTICS
MJD2955 MJD3055
4
Motorola Bipolar Power Transistor Device Data
Figure 6. "On" Voltages, MJD2955
2
0.1
0
0.2 0.3
0.5
1
3
10
0.8
1.6
1.2
V
, VOL
T
AGE (VOL
TS)
0.4
5
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 3 V
Figure 7. Switching Time Test Ciruit
Figure 8. Thermal Response
t, TIME (ms)
1
0.01
0.02
0.7
0.2
0.1
0.05
0.02
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
0.05
1
2
5
10
20
50
100
200
500
R
JC(t) = r(t) R
JC
R
JC = 6.25
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.1
0.5
0.2
RESIST
ANCE (NORMALIZED)
1 k
0.5
0.3
0.07
0.03
0.03
0.3
3
30
300
IC, COLLECTOR CURRENT (AMP)
2
+11 V
25
s
0
9 V
RB
4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf
10 ns
DUTY CYCLE = 1%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.01
Figure 9. Maximum Forward Bias
Safe Operating Area
0.01
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.02
5
2
1
10
0.5
0.1
TJ = 150
C
1 ms
dc
3
0.3
0.6
1
2
60
20
40
I C
, COLLECT
OR CURRENT
(AMP)
WIRE BOND LIMIT
THERMAL LIMIT TC = 25
C (D = 0.1)
SECOND BREAKDOWN LIMIT
10
6
4
500
s
0.03
0.05
100
s
5 ms
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C. TJ(pk) may be calculated from the data in Fig-
ure 8. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJD2955 MJD3055
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 369A13
ISSUE W
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
V
S
A
K
T
SEATING
PLANE
R
B
F
G
D
3 PL
M
0.13 (0.005)
T
C
E
J
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.250
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.033
0.040
0.84
1.01
F
0.037
0.047
0.94
1.19
G
0.090 BSC
2.29 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.350
0.380
8.89
9.65
R
0.175
0.215
4.45
5.46
S
0.050
0.090
1.27
2.28
V
0.030
0.050
0.77
1.27
CASE 36907
ISSUE K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.250
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.033
0.040
0.84
1.01
F
0.037
0.047
0.94
1.19
G
0.180 BSC
4.58 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.102
0.114
2.60
2.89
L
0.090 BSC
2.29 BSC
R
0.175
0.215
4.45
5.46
S
0.020
0.050
0.51
1.27
U
0.020
0.51
V
0.030
0.050
0.77
1.27
Z
0.138
3.51
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
MJD2955 MJD3055
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
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