1
Motorola Bipolar Power Transistor Device Data
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("1" Suffix)
Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
MAXIMUM RATINGS
Rating
Symbol
MJD31
MJD32
MJD31C
MJD32C
Unit
CollectorEmitter Voltage
VCEO
40
100
Vdc
CollectorBase Voltage
VCB
40
100
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current -- Continuous
Peak
IC
3
5
Adc
Base Current
IB
1
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
15
0.12
Watts
W/
_
C
Total Power Dissipation* @ TA = 25
_
C
Derate above 25
_
C
PD
1.56
0.012
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
8.3
_
C/W
Thermal Resistance, Junction to Ambient*
R
JA
80
_
C/W
Lead Temperature for Soldering Purposes
TL
260
_
C
* These ratings are applicable when surface mounted on the minimum pad size recommended.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD31/D
Motorola, Inc. 1995
MJD31,C
MJD32,C
CASE 369A13
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
*Motorola Preferred Device
CASE 36907
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.243
6.172
0.063
1.6
0.1
18
3.0
0.07
1.8
0.165
4.191
0.190
4.826
inches
mm
*
NPN
PNP
*
REV 1
MJD31,C MJD32,C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
MJD31, MJD32
MJD31C, MJD32C
VCEO(sus)
40
100
--
--
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
MJD31, MJD32
(VCE = 60 Vdc, IB = 0)
MJD31C, MJD32C
ICEO
--
50
Adc
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
--
20
Adc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
--
1
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
hFE
25
10
--
50
--
CollectorEmitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
VCE(sat)
--
1.2
Vdc
BaseEmitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
VBE(on)
--
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product (2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
3
--
MHz
SmallSignal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
20
--
--
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2%.
(2) fT =
hfe
ftest.
MJD31,C MJD32,C
3
Motorola Bipolar Power Transistor Device Data
0.03
IC, COLLECTOR CURRENT (AMPS)
5
0.07
0.3
3
70
30
300
h
FE
, DC CURRENT
GAIN
VCE = 2 V
TJ = 150
C
100
0.1
0.7
25
C
55
C
50
0.05
0.5
1
25
25
Figure 1. Power Derating
T, TEMPERATURE (
C)
0
50
75
100
125
150
20
15
10
5
P
D
, POWER DISSIP
A
TION (W
A
TTS)
Figure 2. Switching Time Test Circuit
Figure 3. DC Current Gain
3
0.03
IC, COLLECTOR CURRENT (AMPS)
0.03
0.05 0.07 0.1
0.2
0.5 0.7
3
IB1 = IB2
IC/IB = 10
ts
= ts 1/8 tf
TJ = 25
C
t,
TIME (
s)
0.3
2
1
0.7
0.5
0.3
ts
0.2
0.1
0.07
0.05
1
2
Figure 4. TurnOn Time
2
IC, COLLECTOR CURRENT (AMPS)
0.02
IC/IB = 10
TJ = 25
C
t,
TIME (
s)
1
0.7
0.5
0.3
0.1
0.07
0.05
0.03
0.003
Figure 5. "On" Voltages
IC, COLLECTOR CURRENT (AMPS)
1
0.8
V
, VOL
T
AGE (VOL
TS)
1.4
1.2
0.4
0
+11 V
25
s
0
9 V
RB
4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf
10 ns
DUTY CYCLE = 1%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
REVERSE ALL POLARITIES FOR PNP.
500
7
10
0.03
0.07
0.3
3
0.1
0.7
0.05
0.5
1
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
0.6
0.2
0.005
0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1
2
3
TJ = 25
C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
VCE(sat) @ IC/IB = 10
tf @ VCC = 30 V
tf @ VCC = 10 V
2.5
0
2
1.5
1
0.5
TA TC
Figure 6. TurnOff Time
TA (SURFACE MOUNT)
TC
TYPICAL CHARACTERISTICS
MJD31,C MJD32,C
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
5
IB, BASE CURRENT (mA)
10
20
1.2
0.4
0
50
100
200
500
2
0.8
TJ = 25
C
1.6
2
1
IC = 0.3 A
1000
Figure 7. Collector Saturation Region
300
VR, REVERSE VOLTAGE (VOLTS)
CAP
ACIT
ANCE (pF)
Ceb
0.1
200
100
0.5
1
10
40
TJ = + 25
C
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
R
JC(t) = r(t) R
JC
R
JC = 8.33
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
Figure 8. Capacitance
0.7
D = 0.5
Figure 9. Thermal Response
1 A
3 A
70
50
30
0.2 0.3
2
3
5
20 30
Ccb
0.5
0.1
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
0.1
0.05
0.01
I C
, COLLECT
OR CURRENT
(AMPS)
10
1.5
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.01
3
150
1
0.3
0.2
3
0.05
0.03
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5
7
20
70
10
TC = 25
C SINGLE PULSE
TJ = 150
C
100
s
1 ms
dc
2
0.02
0.1
0.5
2
5
Figure 10. Active Region Safe Operating Area
50
30
100
CURVES APPLY BELOW RATED VCEO
500
s
MJD31, MJD32
MJD31C, MJD32C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C. TJ(pk) may be calculated from the data in Fig-
ure 9. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJD31,C MJD32,C
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 369A13
ISSUE W
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
V
S
A
K
T
SEATING
PLANE
R
B
F
G
D
3 PL
M
0.13 (0.005)
T
C
E
J
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.250
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.033
0.040
0.84
1.01
F
0.037
0.047
0.94
1.19
G
0.090 BSC
2.29 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.350
0.380
8.89
9.65
R
0.175
0.215
4.45
5.46
S
0.050
0.090
1.27
2.28
V
0.030
0.050
0.77
1.27
CASE 36907
ISSUE K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.250
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.033
0.040
0.84
1.01
F
0.037
0.047
0.94
1.19
G
0.180 BSC
4.58 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.102
0.114
2.60
2.89
L
0.090 BSC
2.29 BSC
R
0.175
0.215
4.45
5.46
S
0.020
0.050
0.51
1.27
U
0.020
0.51
V
0.030
0.050
0.77
1.27
Z
0.138
3.51
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
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