1
Motorola Bipolar Power Transistor Device Data
Complementary Power
Transistors
DPAK For Surface Mount Applications
. . . for general purpose power and switching such as output or driver stages in
applications such as switching regulators, converters, and power amplifiers.
Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("1" Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage -- VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
Rating
Symbol
D44H11 or D45H11
Unit
CollectorEmitter Voltage
VCEO
80
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current -- Continuous
Peak
IC
8
16
Adc
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
20
0.16
Watts
W/
_
C
Total Power Dissipation (1)
@ TA = 25
_
C
Derate above 25
_
C
PD
1.75
0.014
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
6.25
_
C/W
Thermal Resistance, Junction to Ambient (1)
R
JA
71.4
_
C/W
Lead Temperature for Soldering
TL
260
_
C
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD44H11/D
Motorola, Inc. 1995
MJD44H11
MJD45H11
CASE 369A13
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
*Motorola Preferred Device
CASE 36907
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.243
6.172
0.063
1.6
0.1
18
3.0
0.07
1.8
0.165
4.191
0.190
4.826
inches
mm
*
NPN
PNP
*
REV 2
MJD44H11 MJD45H11
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 30 mA, IB = 0)
VCEO(sus)
80
--
--
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
--
--
10
A
Emitter Cutoff Current
(VEB = 5 Vdc)
IEBO
--
--
50
A
ON CHARACTERISTICS
CollectorEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
VCE(sat)
--
--
1
Vdc
BaseEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
VBE(sat)
--
--
1.5
Vdc
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
hFE
60
--
--
--
DC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
40
--
--
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
MJD44H11
MJD45H11
Ccb
--
--
130
230
--
--
pF
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
MJD44H11
MJD45H11
fT
--
--
50
40
--
--
MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
MJD44H11
MJD45H11
td + tr
--
--
300
135
--
--
ns
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
ts
--
--
500
500
--
--
ns
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
tf
--
--
140
100
--
--
ns
MJD44H11 MJD45H11
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
R
JC(t) = r(t) R
JC
R
JC = 6.25
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
RESIST
ANCE (NORMALIZED)
0.7
Figure 1. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
SINGLE PULSE
D = 0.5
0.1
0.02
0.01
0.05
I C
, COLLECT
OR CURRENT
(AMP)
20
1
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.02
3
100
2
0.5
5
0.1
THERMAL LIMIT @ TC = 25
C
WIRE BOND LIMIT
5
7
20
70
10
100
s
dc
0.05
0.3
1
3
10
50
30
Figure 2. Maximum Forward Bias
Safe Operating Area
1 ms
500
s
5 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C. TJ(pk) may be calculated from the data in Fig-
ure 1. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
25
25
T, TEMPERATURE (
C)
0
50
75
100
125
150
20
15
10
5
P
D
, POWER DISSIP
A
TION (W
A
TTS)
2.5
0
2
1.5
1
0.5
TA TC
Figure 3. Power Derating
TC
TA
SURFACE
MOUNT
MJD44H11 MJD45H11
4
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
VCE = 4 V
TJ = 125
C
25
C
40
C
1000
0.1
Figure 4. MJD44H11 DC Current Gain
10
1
10
100
Figure 5. MJD45H11 DC Current Gain
Figure 6. MJD44H11 Current Gain
versus Temperature
Figure 7. MJD45H11 Current Gain
versus Temperature
IC/IB = 10
TJ = 25
C
0.1
Figure 8. MJD44H11 OnVoltages
IC, COLLECTOR CURRENT (AMPS)
1
0.8
SA
TURA
TION VOL
T
AGE (VOL
TS)
1.2
0.4
0
0.6
0.2
1
10
TJ = 25
C
Figure 9. MJD45H11 OnVoltages
VCE = 1 V
IC/IB = 10
TJ = 25
C
0.1
IC, COLLECTOR CURRENT (AMPS)
1
0.8
SA
TURA
TION VOL
T
AGE (VOL
TS)
1.2
0.4
0
0.6
0.2
1
10
h
FE
, DC CURRENT
GAIN
1000
0.1
10
1
10
100
VCE = 1 V
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
VCE = 4 V
1000
0.1
10
1
10
100
TJ = 25
C
1 V
TJ = 125
C
25
C
40
C
h
FE
, DC CURRENT
GAIN
1000
0.1
10
1
10
100
VCE = 1 V
VBE(sat)
VCE(sat)
VBE(sat)
VCE(sat)
MJD44H11 MJD45H11
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 369A13
ISSUE W
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
V
S
A
K
T
SEATING
PLANE
R
B
F
G
D
3 PL
M
0.13 (0.005)
T
C
E
J
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.250
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.033
0.040
0.84
1.01
F
0.037
0.047
0.94
1.19
G
0.090 BSC
2.29 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.350
0.380
8.89
9.65
R
0.175
0.215
4.45
5.46
S
0.050
0.090
1.27
2.28
V
0.030
0.050
0.77
1.27
CASE 36907
ISSUE K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.250
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.033
0.040
0.84
1.01
F
0.037
0.047
0.94
1.19
G
0.180 BSC
4.58 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.102
0.114
2.60
2.89
L
0.090 BSC
2.29 BSC
R
0.175
0.215
4.45
5.46
S
0.020
0.050
0.51
1.27
U
0.020
0.51
V
0.030
0.050
0.77
1.27
Z
0.138
3.51
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
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