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Электронный компонент: MJE16004

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1
Motorola Bipolar Power Transistor Device Data
Designer's
TM
Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for highvoltage, highspeed switching of inductive
circuits where fall time and RBSOA are critical. They are particularly wellsuited for
lineoperated switchmode applications.
The MJE16004 is a highgain version of the MJE16002 and MJH16002 for
applications where drive current is limited.
Typical Applications:
Switching Regulators
High Resolution Deflection Circuits
Inverters
Motor Drives
Fast Switching Speeds
50 ns Inductive Fall Time @ 75
_
C (Typ)
70 ns Crossover Time @ 75
_
C (Typ)
100
_
C Performance Specified for:
ReverseBiased SOA
Inductive Switching Times
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO(sus)
450
Vdc
CollectorEmitter Voltage
VCEV
850
Vdc
EmitterBase Voltage
VEB
6.0
Vdc
Collector Current -- Continuous
-- Peak (1)
IC
ICM
5.0
10
Adc
Base Current -- Continuous
-- Peak (1)
IB
IBM
4.0
8.0
Adc
Total Power Dissipation @ TC = 25
_
C
@ TC = 100
_
C
Derate above TC = 25
_
C
PD
80
32
0.64
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.56
_
C/W
Lead Temperature for Soldering Purposes: 1/8
from Case for 5 Seconds
TL
275
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE16002/D
Motorola, Inc. 1995
MJE16002
MJE16004
5.0 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
80 WATTS
*Motorola Preferred Device
*
*
CASE 221A06
TO220AB
REV 2
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MJE16002 MJE16004
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
CollectorEmitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
VCEO(sus)
450
--
--
Vdc
Collector Cutoff Current
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100
_
C)
ICEV
--
--
--
--
0.25
1.5
mAdc
Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50
, TC = 100
_
C)
ICER
--
--
2.5
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
--
--
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 17 or 18
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 19
ON CHARACTERISTICS (1)
CollectorEmitter Saturation Voltage
(IC = 1.5 Adc, IB = 0.2 Adc)
MJE16002
(IC = 1.5 Adc, IB = 0.15 Adc)
MJE16004
(IC = 3.0 Adc, IB = 0.4 Adc)
MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc)
MJE16004
(IC = 3.0 Adc, IB = 0.4 Adc, TC = 100
_
C)
MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc, TC = 100
_
C)
MJE16004
VCE(sat)
--
--
--
--
--
--
--
--
--
--
--
--
1.0
1.0
2.5
2.5
2.5
2.5
Vdc
BaseEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.4 Adc)
MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc)
MJE16004
(IC = 3.0 Adc, IS = 0.4 Adc, TC = 100
_
C)
MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc, TC = 100
_
C)
MJE16004
VBE(sat)
--
--
--
--
--
--
--
--
1.5
1.5
1.5
1.5
Vdc
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
MJE16002
MJE16004
hFE
5.0
7.0
--
--
--
--
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
--
--
200
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
MJE16002/MJH10002
Delay Time
(IC = 3.0 Adc,
VCC = 250 Vdc,
IB1 = 0.4 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 0.8 Adc,
RB2 = 8.0
)
td
--
30
100
ns
Rise Time
(IC = 3.0 Adc,
VCC = 250 Vdc,
IB1 = 0.4 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 0.8 Adc,
RB2 = 8.0
)
tr
--
100
300
Storage Time
C = 3.0 Adc,
VCC = 250 Vdc,
IB1 = 0.4 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 0.8 Adc,
RB2 = 8.0
)
ts
--
1000
3000
Fall Time
IB1 = 0.4 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
tf
--
60
300
Storage Time
PW = 30
s,
Duty Cycle
v
2.0%)
(VBE(off) = 5.0 Vdc)
ts
--
400
--
Fall Time
v
2.0%)
(VBE(off) = 5.0 Vdc)
tf
--
130
--
Resistive Load (Table 1)
MJE16004/MJH16004
Delay Time
(IC = 3.0 Adc,
VCC = 250 Vdc,
IB1 = 0.3 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 0.6 Adc,
RB2 = 8.0
)
td
--
30
100
ns
Rise Time
(IC = 3.0 Adc,
VCC = 250 Vdc,
IB1 = 0.3 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 0.6 Adc,
RB2 = 8.0
)
tr
--
130
300
Storage Time
C = 3.0 Adc,
VCC = 250 Vdc,
IB1 = 0.3 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
(IB2 = 0.6 Adc,
RB2 = 8.0
)
ts
--
800
2700
Fall Time
IB1 = 0.3 Adc,
PW = 30
s,
Duty Cycle
v
2.0%)
tf
--
80
350
Storage Time
PW = 30
s,
Duty Cycle
v
2.0%)
(VBE(off) = 5.0 Vdc)
ts
--
250
--
Fall Time
v
2.0%)
(VBE(off) = 5.0 Vdc)
tf
--
60
--
(1) Pulse Test: PW = 300
s, Duty Cycle
v
2%.
*
f =
IC
IB1
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MJE16002 MJE16004
3
Motorola Bipolar Power Transistor Device Data
SWITCHING CHARACTERISTICS
(continued)
Characteristics
Symbol
Min
Typ
Max
Unit
Inductive Load (Table 2)
MJE16002
Storage Time
(IC = 3.0 Adc,
IB1 = 0.4 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TJ = 100
_
C)
tsv
--
500
1600
ns
Fall Time
(IC = 3.0 Adc,
IB1 = 0.4 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TJ = 100
_
C)
tfi
--
100
200
Crossover Time
(IC = 3.0 Adc,
IB1 = 0.4 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
_
C)
tc
--
120
250
Storage Time
IB1 = 0.4 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TJ = 150
_
C)
tsv
--
600
--
Fall Time
VCE(pk) = 400 Vdc)
(TJ = 150
_
C)
tfi
--
120
--
Crossover Time
_
C)
tc
--
160
--
Inductive Load (Table 2)
MJE16004
Storage Time
(IC = 3.0 Adc,
IB1 = 0.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TJ = 100
_
C)
tsv
--
400
1300
ns
Fall Time
(IC = 3.0 Adc,
IB1 = 0.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TJ = 100
_
C)
tfi
--
80
150
Crossover Time
(IC = 3.0 Adc,
IB1 = 0.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
_
C)
tc
--
90
200
Storage Time
IB1 = 0.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TJ = 150
_
C)
tsv
--
450
--
Fall Time
VCE(pk) = 400 Vdc)
(TJ = 150
_
C)
tfi
--
100
--
Crossover Time
_
C)
tc
--
110
--
(1) Pulse Test: PW = 300
s, Duty Cycle
v
2%.
*
f =
IC
IB1
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
BE
, BASEEMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
IC, COLLECTOR CURRENT (AMPS)
3.0
2.0
1.0
1.0
IC, COLLECTOR CURRENT (AMPS)
0.05
0.1
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
3.0
0.3
0.7
5.0
10
10
Figure 2. Collector Saturation Region
0.1
IB, BASE CURRENT (AMPS)
0.2
0.3
0.1
60
h
FE
, DC CURRENT
GAIN
VCE = 5.0 V
0.5 0.7 1.0
2.0
Figure 3. CollectorEmitter Saturation Region
Figure 4. BaseEmitter Voltage
2.0
0.3
TJ = 25
C
TJ = 100
C
20
0.5
2.0
1.0
0.07
0.03
0.3
0.5
25
C
55
C
2 A
IC = 1 A
5.0
0.2
1.0
3.0
7.0
3.0
0.1
2.0
10
0.5
0.2
1.0
5.0
0.7
1.5
50
30
7.0
0.5
0.7
0.2
0.05
f = 10
TJ = 100
C
2.0
0.1
3.0
0.2
5.0
0.5
0.1
2.0
10
0.5
0.2
1.0
5.0
3 A
4 A
5 A
f = 10
TJ = 25
C
f = 5
TJ = 25
C
f = 5
TJ = 25
C
f = 10
TJ = 100
C
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MJE16002 MJE16004
4
Motorola Bipolar Power Transistor Device Data
Figure 5. Collector Cutoff Region
104
VBE, BASEEMITTER VOLTAGE (VOLTS)
101
0
0.4
Figure 6. Capacitance
10000
VR, REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
Cib
0.1
, COLLECT
OR CURRENT
(
A)
I C
103
102
101
100
0.2
+ 0.2
+ 0.4
+ 0.6
TJ = 150
C
125
C
100
C
75
C
REVERSE
FORWARD
25
C
VCE = 250 Vdc
100
850
TJ = 25
C
1000
10
100
10
1.0
Cob
TYPICAL STATIC CHARACTERISTICS (continued)
, ST
ORAGE
TIME (ns)
t sv
, ST
ORAGE
TIME (ns)
t sv
IC, COLLECTOR CURRENT (AMPS)
10000
5000
2000
100
200
1000
500
0.7
1.0
2.0
0.5
5.0
Figure 7. Storage Time
Figure 8. Storage Time
IC, COLLECTOR CURRENT (AMPS)
t fi
, COLLECT
OR CURRENT
F
ALL

TIME (ns)
1000
500
200
10
20
100
50
0.7
1.0
0.5
5.0
IC, COLLECTOR CURRENT (AMPS)
t fi
, COLLECT
OR CURRENT
F
ALL

TIME (ns)
1000
500
200
10
20
100
50
0.7
1.0
0.5
5.0
Figure 9. Collector Current Fall Time
Figure 10. Collector Current Fall Time
IC, COLLECTOR CURRENT (AMPS)
10000
5000
2000
100
200
1000
500
0.7
1.0
3.0
0.5
5.0
f = 5
TJ = 75
C
VCC = 20 V
VBE(off) = 0 V
2.0 V
0 V
VBE(off) = 0 V
2.0
3.0
2.0
3.0
2.0
3.0
VBE(off) = 2.0 V
VBE(off) = 0 V
VBE(off) = 5.0 V
f = 10
TJ = 75
C
VCC = 20 V
VBE(off) = 2.0 V
VBE(off) = 5.0 V
VBE(off) = 2.0 V
VBE(off) = 5.0 V
f = 5
TJ = 75
C
VCC = 20 V
5.0 V
2.0 V
0 V
VBE(off) = 0 V
VBE(off) = 2.0 V
f = 10
TJ = 75
C
VCC = 20 V
5.0 V
VBE(off) = 5.0 V
TYPICAL DYNAMIC CHARACTERISTICS
background image
MJE16002 MJE16004
5
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (AMPS)
1000
500
200
10
20
100
50
0.7
1.0
0.5
5.0
IC, COLLECTOR CURRENT (AMPS)
t c
, CROSSOVER
TIME (ns)
1000
500
200
10
20
100
50
0.7
1.0
0.5
5.0
Figure 11. Crossover Time
Figure 12. Crossover Time
2.0
3.0
2.0
3.0
t c
, CROSSOVER
TIME (ns)
2.0 V
0 V
VBE(off) = 0 V
VBE(off) = 2.0 V
f = 5
TJ = 75
C
VCC = 20 V
5.0 V
VBE(off) = 5.0 V
2.0 V
0 V
VBE(off) = 0 V
VBE(off) = 2.0 V
f = 10
TJ = 75
C
VCC = 20 V
5.0 V
VBE(off) = 5.0 V
TYPICAL DYNAMIC CHARACTERISTICS (continued)
TIME
VCE
90% IB1
tsv
IC pk
VCE(pk)
90% VCE(pk)
90% IC(pk)
tc
10% VCE(pk)
10%
IC pk
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
0
5.0
4.0
7.0
8.0
2.0
0
2.0
1.0
5.0
4.0
3.0
1.0
3.0
6.0
Figure 13. Inductive Switching Measurements
Figure 14. Peak Reverse Base Current
IB1 = 0.6 A
IC = 3.0 A
TJ = 25
C
I B2
, REVERSE BASE CURRENT
(AMPS)
Figure 15. Thermal Response (MJE16002 and MJE16004)
t, TIME (ms)
1
0.01
0.01
0.2
0.1
0.05
0.02
0.05
1
2
5
10
20
50
100
200
500
R
JC(t) = r(t) R
JC
R
JC = 156
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.1
0.5
0.2
r(t),
TRANSIENT

THERMAL
RESIST
ANCE (NORMALIZED)
0.5
0.3
0.03
0.02
1 k
0.7
0.07
IC
IB
2% IC
trv
tfi
tti
IB1 = 0.3 A
TYPICAL ELECTRICAL CHARACTERISTICS