1
Motorola Bipolar Power Transistor Device Data
Designer's
TM
Data Sheet
SWITCHMODE
TM
NPN Bipolar
Power Transistor for Electronic
Light Ballast and Switching
Power Supply Applications
The MJE/MJF18206 have an application specific stateoftheart die dedicated to
the electronic ballast ("light ballast") and power supply applications.
Improved Global Efficiency Due to Low Base Drive Requirements:
-- High and Flat DC Current Gain hFE
-- Fast Switching
-- No Coil Required in Base Circuit for fast TurnOff (No Current Tail)
Full Characterization at 125
_
C
Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric
Distributions
Two Package Choices: Standard TO220 or Isolated TO220
MAXIMUM RATINGS
Rating
Symbol
MJE18206
MJF18206
Unit
CollectorEmitter Voltage
VCEO
600
Vdc
CollectorBase Voltage
VCBO
1200
Vdc
CollectorEmitter Voltage
VCES
1200
Vdc
EmitterBase Voltage
VEBO
10
Vdc
Collector Current -- Continuous
-- Peak (1)
IC
ICM
8
16
Adc
Base Current -- Continuous
-- Peak (1)
IB
IBM
5
9
Adc
RMS Isolation Voltage (2)
Per Figure 22
(for 1 sec, R.H.
30%)
Per Figure 23
TC = 25
C
Per Figure 24
VISOL1
VISOL2
VISOL3
4500
3500
1500
Volts
*Total Device Dissipation @ TC = 25
C
*Derate above 25
_
C
PD
100
0.8
40
0.32
Watt
W/
_
C
Operating and Storage Temperature
TJ, Tstg
65 to 150
_
C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18206
MJF18206
Unit
Thermal Resistance -- Junction to Case
-- Junction to Ambient
R
JC
R
JA
1.25
62.5
3.125
62.5
_
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
from Case for 5 Seconds
TL
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
(2) Proper strike and creepage distance must be provided.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18206/D
Motorola, Inc. 1995
MJE18206
MJF18206
POWER TRANSISTORS
8 AMPERES
1200 VOLTS
40 and 100 WATTS
CASE 221A06
TO220AB
CASE 221D02
TO220 FULLPACK
MJE18206 MJF18206
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
(IC = 200 mA, L = 25 mH, R = 200
)
VCEO(sus)
VCER(sus)
550
600
630
700
Vdc
CollectorBase Breakdown Voltage
(ICBO = 1 mA, IE = 0)
VCBO
1200
1320
Vdc
EmitterBase Breakdown Voltage
(IEBO = 1 mA, IC = 0)
VEBO
10
12.9
Vdc
Collector Cutoff Current (VCE = 550 V, IB = 0)
Collector Cutoff Current
(VCE = 550 V, IB = 0)
@ TC = 25
C
@ TC = 125
C
ICEO
200
2000
Adc
Collector Cutoff Current (VCE = Rated VCES, VBE = 0)
Collector Cutoff Current
(VCE = 1000 V, VBE = 0)
@ TC = 25
C
@ TC = 125
C
@ TC = 125
C
ICES
100
1000
100
Adc
Collector Cutoff Current
(VCB = 1200 V, IE = 0)
ICBO
100
Adc
EmitterCutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
100
Adc
ON CHARACTERISTICS
BaseEmitter Saturation Voltage
(IC = 1.3 Adc, IB = 0.13 Adc)
@ TC = 25
C
@ TC = 125
C
VBE(sat)
0.77
0.67
1
0.9
Vdc
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25
C
@ TC = 125
C
0.85
0.75
1.1
1
(IC = 3 Adc, IB = 0.6 Adc)
@ TC = 25
C
@ TC = 125
C
0.91
0.8
1.1
1
CollectorEmitter Saturation Voltage
(IC = 1.3 Adc, IB = 0.13 Adc)
@ TC = 25
C
@ TC = 125
C
VCE(sat)
0.3
0.4
0.75
1
Vdc
(IC = 3 Adc, IB = 0.6 Adc)
@ TC = 25
C
@ TC = 125
C
0.4
0.8
0.75
1.25
DC Current Gain
(IC = 0.5 Adc, VCE = 5 Vdc)
@ TC = 25
C
@ TC = 125
C
hFE
18
25
25
--
(IC = 1 Adc, VCE = 5 Vdc)
@ TC = 25
C
@ TC = 125
C
18
20
45
(IC = 3 Adc, VCE = 1 Vdc)
@ TC = 25
C
@ TC = 125
C
5
4
8
6
--
(IC = 10 mAdc, VCE = 5 Vdc)
@ TC = 25
C
@ TC = 125
C
11
33
50
--
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
200
pF
Input Capacitance (VEB = 8 Vdc)
Cib
2000
pF
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1
s and
3
s respectively after
rising IB1 reaches
90% of final IB1
IC = 1.3 Adc
IB1 = 130 mAdc
VCC = 300 V
@ 1
s
@ TC = 25
C
VCE(dsat)
7.5
V
Voltage:
Determined 1
s and
3
s respectively after
rising IB1 reaches
90% of final IB1
IB1 = 130 mAdc
VCC = 300 V
@ 3
s
@ TC = 25
C
4.5
Determined 1
s and
3
s respectively after
rising IB1 reaches
90% of final IB1
IC = 3 Adc
IB1 = 0.6 Adc
VCC = 300 V
@ 1
s
@ TC = 25
C
14.5
rising IB1 reaches
90% of final IB1
IB1 = 0.6 Adc
VCC = 300 V
@ 3
s
@ TC = 25
C
6
MJE18206 MJF18206
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
10%, Pulse Width = 40
s)
Turnon Time
IC = 3 Adc, IB1 = 0.6 Adc
IB2 = 1.5 Adc
VCC = 300 Vdc
@ TC = 25
C
ton
200
350
ns
Turnoff Time
IC = 3 Adc, IB1 = 0.6 Adc
IB2 = 1.5 Adc
VCC = 300 Vdc
@ TC = 25
C
@ TC = 125
C
toff
2
2.5
2.5
s
Turnon Time
IC = 3 Adc, IB1 = 0.6 Adc
IB2 = 0.6 Adc
VCC = 300 Vdc
@ TC = 25
C
ton
190
250
ns
Turnoff Time
IC = 3 Adc, IB1 = 0.6 Adc
IB2 = 0.6 Adc
VCC = 300 Vdc
@ TC = 25
C
@ TC = 125
C
toff
3.7
4.5
4.5
s
Turnon Time
IC = 1 Adc, IB1 = 70 mAdc
IB2 = 1 Adc
VCC = 125 Vdc
PW = 70
s
@ TC = 25
C
td
125
300
ns
IC = 1 Adc, IB1 = 70 mAdc
IB2 = 1 Adc
VCC = 125 Vdc
PW = 70
s
@ TC = 25
C
tr
400
750
ns
Turnoff Time
IB2 = 1 Adc
VCC = 125 Vdc
PW = 70
s
@ TC = 25
C
ts
600
1.2
s
PW = 70
s
@ TC = 25
C
tf
450
700
ns
Turnon Time
IC = 1 Adc, IB1 = 100 mAdc
IB2 = 500 mAdc
VCC = 300 Vdc
@ TC = 25
C
@ TC = 125
C
ton
250
225
350
ns
Turnoff Time
IB2 = 500 mAdc
VCC = 300 Vdc
@ TC = 25
C
@ TC = 125
C
toff
2
2.5
2.75
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200
H)
Fall Time
IC = 1.3 Adc
IB1 = 0.13 Adc
IB2 = 0.65 Adc
@ TC = 25
C
@ TC = 125
C
tf
150
225
200
ns
Storage Time
IC = 1.3 Adc
IB1 = 0.13 Adc
IB2 = 0.65 Adc
@ TC = 25
C
@ TC = 125
C
ts
1.6
1.9
2
s
Crossover Time
IB2 = 0.65 Adc
@ TC = 25
C
@ TC = 125
C
tc
260
300
350
ns
Fall Time
IC = 3 Adc
IB1 = 0.6 Adc
IB2 = 1.5 Adc
@ TC = 25
C
@ TC = 125
C
tf
300
400
450
ns
Storage Time
IC = 3 Adc
IB1 = 0.6 Adc
IB2 = 1.5 Adc
@ TC = 25
C
@ TC = 125
C
ts
2.25
2.5
2.75
s
Crossover Time
IB2 = 1.5 Adc
@ TC = 25
C
@ TC = 125
C
tc
500
700
800
ns
Fall Time
IC = 3 Adc
IB1 = 0.6 Adc
IB2 = 0.6 Adc
@ TC = 25
C
@ TC = 125
C
tf
350
500
500
ns
Storage Time
IC = 3 Adc
IB1 = 0.6 Adc
IB2 = 0.6 Adc
@ TC = 25
C
@ TC = 125
C
ts
4.25
5.1
5
s
Crossover Time
IB2 = 0.6 Adc
@ TC = 25
C
@ TC = 125
C
tc
600
1100
800
ns
MJE18206 MJF18206
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
10
1
10
1
0.1
0.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
TJ = 125
C
TJ = 25
C
TJ = 20
C
VCE = 1 V
Figure 2. DC Current Gain @ 3 Volts
100
10
1
10
1
0.1
0.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
TJ = 125
C
TJ = 20
C
VCE = 3 V
Figure 3. DC Current Gain @ 5 Volts
100
10
1
10
1
0.1
0.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
TJ = 125
C
VCE = 5 V
Figure 4. Collector Saturation Region
2
0
10000
1000
100
10
IB, BASE CURRENT (mA)
V
CE
, VOL
T
AGE (VOL
TS)
1
7 A
5 A
4 A
Figure 5A. CollectorEmitter Saturation Voltage
10
1
0.01
10
1
0.1
0.001
IC, COLLECTOR CURRENT (AMPS)
IC/IB = 5
V
CE
, VOL
T
AGE (VOL
TS)
0.1
TJ = 125
C
TJ = 25
C
TJ = 20
C
0.01
0.01
0.01
3 A
VCE(sat)
(IC = 2 A)
Figure 5B. CollectorEmitter Saturation Voltage
10
1
0.01
10
1
0.1
0.001
IC, COLLECTOR CURRENT (AMPS)
IC/IB = 10
V
CE
, VOL
T
AGE (VOL
TS)
0.1
0.01
0.01
TJ = 125
C
TJ = 25
C
TJ = 20
C
TJ = 25
C
TJ = 25
C
TJ = 20
C
TJ = 25
C
VCE(sat)
(IC = 1 A)
MJE18206 MJF18206
5
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 6. BaseEmitter Saturation Region
1.5
0
10
0.1
0.001
IC, COLLECTOR CURRENT (AMPS)
V
BE
, VOL
T
AGE (VOL
TS)
1
1
0.5
0.01
IC/IB = 5
IC/IB = 10
TJ = 125
C
TJ = 25
C
TJ = 20
C
Figure 7. Capacitance
10000
10
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
1000
TJ = 25
C
f(test) = 1 MHz
100
Cib (pF)
Cob (pF)
t,
TIME (ns)
Figure 8. Resistive Switching, ton
1600
0
5
1
0.5
IC, COLLECTOR CURRENT (AMPS)
1.5
800
IC/IB = 10
IC/IB = 5
IB1 = IB2
VCC = 300 V
PW = 20
s
1400
1200
1000
600
400
200
2
2.5
3
3.5
4
4.5
125
C
25
C
Figure 9. Resistive Switching, toff
8
5
1
IC, COLLECTOR CURRENT (AMPS)
6
t,
TIME (
s)
7
2
TJ = 25
C
TJ = 125
C
IC/IB = 10
IC/IB = 5
4
3
5
1
0.5
1.5
2
2.5
3
3.5
4
4.5
IB1 = IB2
VCC = 300 V
PW = 20
s
t,
TIME (ns)
Figure 10. Inductive Storage Time, tsi
6
3
2
3.5
1
0.5
IC, COLLECTOR CURRENT (AMPS)
1.5
4
TJ = 125
C
TJ = 25
C
IC/IB = 5
5
3
2.5
2
IC/IB = 10
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200
H
Figure 11. Inductive Storage Time
6
3
15
7
3
hFE, FORCED GAIN
13
4
9
TJ = 125
C
TJ = 25
C
, ST
ORAGE
TIME (
t si
s)
5
5
11
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200
H
IC = 1 A
IC = 2 A
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