1
Motorola Bipolar Power Transistor Device Data
Plastic NPN Silicon
Medium-Power Transistors
. . . useful for medium voltage applications requiring high fT such as converters and
extended range amplifiers.
MAXIMUM RATINGS
Rating
Symbol
MJE341
MJE344
Unit
CollectorEmitter Voltage
VCEO
150
200
Vdc
CollectorBase Voltage
VCB
175
200
Vdc
EmitterBase Voltage
VEB
3.0
5.0
Vdc
Collector Current -- Continuous
IC
500
mAdc
Base Current
IB
250
mAdc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
20
0.16
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
6.25
_
C/W
I C
, COLLECT
OR CURRENT
(AMP)
1.0
10
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.01
0.5
0.1
0.05
0.02
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25
C
20
40
60
100
300
TJ = 150
C
1.0 ms
dc
0.2
30
200
Figure 1. Active Region Safe Operating Area
500
s
ALL
ALL
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150
_
C; TC is vari-
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less then the limitations
imposed by second breakdown.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE341/D
Motorola, Inc. 1995
MJE341
MJE344
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150 200 VOLTS
20 WATTS
CASE 7708
TO225AA TYPE
REV 7
MJE341 MJE344
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
MJE341
MJE344
VCEO(sus)
150
200
--
--
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
MJE341
(VCE = 200 Vdc, IB = 0)
MJE344
ICEO
--
--
1.0
1.0
mAdc
Collector Cutoff Current
(VCB = 175 Vdc, IE = 0)
MJE341
(VCB = 200 Vdc, IE = 0)
MJE344
ICBO
--
--
0.3
0.1
mAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
MJE341
(VEB = 5.0 Vdc, IC = 0)
MJE344
IEBO
--
--
0.1
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 10 Vdc)
MJE341
(IC = 50 mAdc, VCE = 10 Vdc)
MJE341
MJE344
(IC = 150 mAdc, VCE = 10 Vdc)
MJE341
hFE
20
25
30
20
--
200
300
--
--
CollectorEmitter Saturation Voltage
(IC = 50 mAdc, IB = 5.0 mAdc)
MJE344
(IC = 150 mAdc, IB = 15 mAdc)
MJE341
VCE(sat)
--
--
1.0
2.3
Vdc
BaseEmitter On Voltage
(IC = 50 mAdc, VCE = 10 Vdc)
VBE(on)
--
1.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz)
fT
15
--
MHz
Output Capacitance
(VCB = 20 Vdc, IE = 0, f = 100 kHz)
Cob
--
15
pF
SmallSignal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
--
--
300
2.0
IC, COLLECTOR CURRENT (mA)
10
5.0
70
300 500
50
30
Figure 2. DC Current Gain
10
IC, COLLECTOR CURRENT (mA)
0.6
50
0.8
200
h
FE
, CURRENT
GAIN
100
300
500
1.0
TJ = + 25
C
TJ = +150
C
+100
C
70
20
200
100
20
3.0
7.0
50
1.0
100
20
30
200
0
0.2
0.4
Figure 3. "On" Voltages
+ 25
C
55
C
VCE = 2.0 V
VCE = 10 V
10
VOL
T
AGE (VOL
TS)
IC/IB = 5.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10
MJE341 MJE344
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 7708
TO225AA TYPE
ISSUE V
STYLE 1:
PIN 1.
EMITTER
2.
COLLECTOR
3.
BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.055
1.15
1.39
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
1.02
_
_
MJE341 MJE344
4
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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MJE341/D
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