1
Motorola Bipolar Power Transistor Device Data
High-Voltage
High Power
Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
High CollectorEmitter Sustaining Voltage --
NPN
PNP
VCEO(sus) = 140 Vdc -- MJE4342 MJE4352
VCEO(sus)
= 160 Vdc -- MJE4343
MJE4353
High DC Current Gain -- @ IC = 8.0 Adc
hFE = 35 (Typ)
Low CollectorEmitter Saturation Voltage --
VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
MAXIMUM RATINGS
Rating
Symbol
MJE4342
MJE4352
MJE4343
MJE4353
Unit
CollectorEmitter Voltage
VCEO
140
160
Vdc
CollectorBase Voltage
VCB
140
160
Vdc
EmitterBase Voltage
VEB
7.0
Vdc
Collector Current -- Continuous
Peak (1)
IC
16
20
Adc
Base Current -- Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25
_
C
PD
125
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.0
_
C/W
(1) Pulse Test: Pulse Width
v
5.0
s, Duty Cycle
w
10%.
3.5
0
Figure 1. Power Derating
Reference: Ambient Temperature
TA, AMBIENT TEMPERATURE (
C)
25
50
100
125
3.0
2.5
0.5
75
150
1.0
1.5
2.0
P
D
, POWER DISSIP
A
TION (W
A
TTS)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE4342/D
Motorola, Inc. 1995
MJE4342
MJE4343
MJE4352
MJE4353
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 160 VOLTS
NPN
PNP
CASE 340D01
TO218 TYPE
REV 2
MJE4342 MJE4343 MJE4352 MJE4353
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
MJE4342, MJE4352
MJE4343, MJE4353
VCEO(sus)
140
160
--
--
Vdc
CollectorEmitter Cutoff Current
(VCE = 70 Vdc, IB = 0)
MJE4342, MJE4352
(VCE = 80 Vdc, IB = 0
MJE4343, MJE4353
ICEO
--
--
750
750
Adc
CollectorEmitter Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150
_
C)
ICEX
--
--
1.0
5.0
mAdc
CollectorBase Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
--
750
Adc
EmitterBase Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 8.0 Adc, VCE = 2.0 Vdc)
(IC = 16 Adc, VCE = 4.0 Vdc)
hFE
15
8.0
35 (Typ)
15 (Typ)
--
CollectorEmitter Saturation Voltage
(IC = 8.0 Adc, IB = 800 mA)
(IC = 16 Adc, IB = 2.0 Adc)
VCE(sat)
--
--
2.0
3.5
Vdc
BaseEmitter Saturation Voltage
(IC = 16 Adc, IB = 2.0 Adc)
VBE(sat)
--
3.9
Vdc
BaseEmitter On Voltage
(IC = 16 Adc, VCE = 4.0 Vdc)
VBE(on)
--
3.9
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
fT
1.0
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
--
800
pF
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
w
2.0%.
(2) fT =
hfe
ftest.
t,
TIME (
s)
Figure 2. Switching Times Test Circuit
+11 V
25
s
0
9.0 V
RB
4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf
10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
3.0
IC, COLLECTOR CURRENT (AMP)
TJ = 25
C
IC/IB = 10
VCE = 30 V
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.2
0.5 0.7
5.0
2.0
1.0
3.0
20
Figure 3. Typical TurnOn Time
10
7.0
tr
0.3
Note: Reverse polarities to test PNP devices.
td @ VBE(off) = 5.0 V
MJE4342 MJE4343 MJE4352 MJE4353
3
Motorola Bipolar Power Transistor Device Data
5.0
IC, COLLECTOR CURRENT (AMP)
0.5
3.0
2.0
1.0
Figure 4. TurnOff Time
0.7
0.2
0.5 0.7
5.0
2.0
0.3
1.0
3.0
20
10
7.0
TJ = 25
C
IC/IB = 10
IB1 = IB2
VCE = 30 V
ts
tf
t,
TIME (
s)
2.0
0.2
IC, COLLECTOR CURRENT (AMP)
20
1.6
1.2
0.8
0.4
0
10
7.0
0.3
0.7
0.5
2.0
1.0
5.0
3.0
TJ = 25
C
V
, VOL
T
AGE (VOL
TS)
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
Figure 5. On Voltages
TYPICAL CHARACTERISTICS
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
1000
0.2
IC, COLLECTOR CURRENT (AMPS)
20
100
50
20
10
10
0.5
2.0
1.0
5.0
VCE = 2 V
Figure 6. MJE4340 Series (NPN)
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
1000
0.2
IC, COLLECTOR CURRENT (AMPS)
20
100
10
10
0.5
2.0
1.0
5.0
Figure 7. MJE4350 Series (PNP)
h
FE
, DC CURRENT
GAIN
2.0
0.05
IB, BASE CURRENT (AMP)
5.0
1.2
0
3.0
0.1
0.3
0.2
0.5
Figure 8. Collector Saturation Region
1.6
0.8
0.4
0.07
0.7
1.0
2.0
TJ = 25
C
IC = 4.0 A
8.0 A
16 A
VCE = 2 V
TJ = 150
C
25
C
55
C
VCE = 2 V
TJ = 150
C
25
C
55
C
DC CURRENT GAIN
MJE4342 MJE4343 MJE4352 MJE4353
4
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
0.01
0.02
0.05
1.0
2.0
5.0
10
20
50
100
2000
0.1
0.5
0.2
1.0
0.2
0.1
0.05
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
JC(t) = r(t)
JC
JC = 1.0
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
RESIST
ANCE (NORMALIZED)
Figure 9. Thermal Response
0.5
D = 0.5
0.05
0.02
200
500
1000
0.1
0.02
0.01
SINGLE PULSE
100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.1
200
50
1.0
Figure 10. Maximum Forward Bias Safe
Operating Area
5.0 ms
dc
20
150
30
20
10
7.0
5.0
3.0
MJE4342
I C
, COLLECT
OR CURRENT
(AMP)
0.2
0.5
2.0
5.0
10
50
70 100
MJE4352
MJE4343
MJE4353
SECONDARY BREAKDOWN LIMITED
THERMAL LIMIT TC = 25
C
BONDING WIRE LIMITED
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turnoff, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during re-
verse biased turnoff. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 11 gives RBSOA characteristics.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TC = 25
_
C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
25
_
C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 9.
20
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
8.0
Figure 11. Maximum Reverse Bias Safe
Operating Area
16
120
100
80
60
40
20
MJE4342
I C
, COLLECT
OR CURRENT
(AMPS)
4.0
12
140
160
180
MJE4352
MJE4343
MJE4353
TJ = 100
C
VBE(off)
5 V
MJE4342 MJE4343 MJE4352 MJE4353
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 340D01
TO218 TYPE
ISSUE A
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
V
G
K
S
L
U
B
Q
E
C
J
H
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
19.00
19.60
0.749
0.771
B
14.00
14.50
0.551
0.570
C
4.20
4.70
0.165
0.185
D
1.00
1.30
0.040
0.051
E
1.45
1.65
0.058
0.064
G
5.21
5.72
0.206
0.225
H
2.60
3.00
0.103
0.118
J
0.40
0.60
0.016
0.023
K
28.50
32.00
1.123
1.259
L
14.70
15.30
0.579
0.602
Q
4.00
4.25
0.158
0.167
S
17.50
18.10
0.689
0.712
U
3.40
3.80
0.134
0.149
V
1.50
2.00
0.060
0.078
1
2
3
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