1
Motorola Bipolar Power Transistor Device Data
NPN Silicon Power
Darlington Transistors
The MJE5740, 41, 42 Darlington transistors are designed for highvoltage power
switching in inductive circuits. They are particularly suited for operation in applications
such as:
Small Engine Ignition
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
MAXIMUM RATINGS
Rating
Symbol
MJE5740
MJE5741
MJE5742
Unit
CollectorEmitter Voltage
VCEO(sus)
300
350
400
Vdc
CollectorEmitter Voltage
VCEV
600
700
800
Vdc
Emitter Base Voltage
VEB
8
Vdc
Collector Current -- Continuous
-- Peak (1)
IC
ICM
8
16
Adc
Base Current -- Continuous
-- Peak (1)
IB
IBM
2.5
5
Adc
Total Power Dissipation
@ TA = 25
_
C
Derate above 25
_
C
PD
2
16
Watts
mW/
_
C
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
80
640
Watts
mW/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.56
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
from Case for 5 Seconds
TL
275
_
C
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (2)
CollectorEmitter Sustaining Voltage
MJE5740
(IC = 50 mA, IB = 0)
MJE5741
MJE5742
VCEO(sus)
300
350
400
--
--
--
--
--
--
Vdc
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100
_
C)
ICEV
--
--
--
--
1
5
mAdc
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
--
--
75
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 6
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 7
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5740/D
Motorola, Inc. 1995
MJE5740
MJE5741
MJE5742
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
100
50
*
*
CASE 221A06
TO220AB
REV 1
MJE5740 MJE5741 MJE5742
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (1)
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
100
400
--
--
--
CollectorEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
CollectorEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
CollectorEmitter Saturation Voltage
(IC = 4 Adc, IB = 0.2 Adc, TC = 100
_
C)
VCE(sat)
--
--
--
--
--
--
2
3
2.2
Vdc
BaseEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
BaseEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
BaseEmitter Saturation Voltage
(IC = 4 Adc, IB = 0.2 Adc, TC = 100
_
C)
VBE(sat)
--
--
--
--
--
--
2.5
3.5
2.4
Vdc
Diode Forward Voltage (2) (IF = 5 Adc)
Vf
--
--
2.5
Vdc
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 = IB2 = 0.25 A, tp = 25
s,
Duty Cycle
v
1%)
td
--
0.04
--
s
Rise Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 = IB2 = 0.25 A, tp = 25
s,
Duty Cycle
v
1%)
tr
--
0.5
--
s
Storage Time
IB1 = IB2 = 0.25 A, tp = 25
s,
Duty Cycle
v
1%)
ts
--
8
--
s
Fall Time
Duty Cycle
v
1%)
tf
--
2
--
s
Inductive Load, Clamped (Table 1)
Voltage Storage Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 0.06 A, VBE(off) = 5 Vdc)
tsv
--
4
--
s
Crossover Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 0.06 A, VBE(off) = 5 Vdc)
tc
--
2
--
s
(1) Pulse Test: Pulse Width 300
s, Duty Cycle = 2%.
(2) The internal CollectortoEmitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
(2)
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
V
BE
, BASEEMITTER VOL
T
AGE (VOL
TS)
trv
IC
VCE
90% IB1
tsv
IC(pk)
VCE(pk)
90% VCE(pk)
90% IC
10% VCE(pk)
10%
IC(pk) 2% IC
IB
tfi
tti
tc
0.1
IC, COLLECTOR CURRENT (AMPS)
5
2000
h
FE
, DC CURRENT
GAIN
VCE = 5 V
1
+ 25
C
2
10
1000
100
10
0
TC, CASE TEMPERATURE (
C)
0
40
120
160
60
POWER DERA
TING F
ACT
OR (%)
SECOND BREAKDOWN DERATING
100
80
40
20
60
100
140
80
THERMAL DERATING
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
IC, COLLECTOR CURRENT (AMPS)
2.4
1.6
0.4
Figure 3. DC Current Gain
Figure 4. BaseEmitter Voltage
2
1.2
0.8
hFE = 20
0.2
10
2
0.5
1
5
TIME
150
C
55
C
20
2.2
1.4
1.8
1
0.6
+150
C
+ 25
C
55
C
TYPICAL CHARACTERISTICS
MJE5740 MJE5741 MJE5742
3
Motorola Bipolar Power Transistor Device Data
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
OUTPUT WAVEFORMS
TEST CIRCUITS
CIRCUIT
V
ALUES
TEST W
A
VEFORMS
NOTE:
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
PW
DUTY CYCLE
10%
tr, tf
10 ns
68
1 k
0.001
F
0.02
F
1N4933
270
+ 5 V
1 k
2N2905
47
1/2 W
100
VBE(off)
MJE200
T.U.T.
IB
RB
1N4933
1N4933
33
33
2N2222
1 k
MJE210
VCC
+ 5 V
L
IC
MR826*
Vclamp
*SELECTED FOR
1 kV
VCE
5.1 k
51
+VCC
RC
SCOPE
4 V
D1
RB
TUT
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
GAP FOR 200
H/20 A
Lcoil = 200
H
VCC = 30 V
VCE(pk) = 250 Vdc
IC(pk) = 6 A
VCC = 250 V
D1 = 1N5820 OR EQUIV.
IC
VCE
IC(pk)
t1
tf
t
t
t2
TIME
VCE OR
Vclamp
tf CLAMPED
t1 ADJUSTED TO
OBTAIN IC
t1
Lcoil (ICpk)
VCC
t2
Lcoil (ICpk)
Vclamp
TEST EQUIPMENT
SCOPETEKTRONICS
475 OR EQUIVALENT
+10 V
25
s
0
9.2 V
tr, tf < 10 ns
DUTY CYCLE = 1%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
Table 1. Test Conditions for Dynamic Performance
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
Figure 5. Inductive Switching Measurements
IC, COLLECTOR CURRENT (AMPS)
1
0.2
0.1
1.4
0.8
1.2
10
5
2
1
0.5
0.2
1.6
1.8
0.6
0.4
hFE = 20
+ 25
C
55
C
+150
C
MJE5740 MJE5741 MJE5742
4
Motorola Bipolar Power Transistor Device Data
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TC = 25
_
C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
25
_
C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 6 may be found at any case tem-
perature by using the appropriate curve on Figure 1.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turnoff, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent condition allowable dur-
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
I C
, COLLECT
OR CURRENT
(AMPS)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
16
14
12
8
0
2
4
10
100
200
300
500
0
400
16
5
10
8
1
0.02
100
I C
, COLLECT
OR CURRENT
(AMPS)
0.1
10
20
200
400
3
0.5
50
0.3
0.05
dc
1 ms
100
s
MJE5742
MJE5741
MJE5740
VBE(off)
5 V
TJ = 100
C
6
CURVES APPLY BELOW RATED VCEO
10
s
MJE5742
MJE5741
MJE5740
5 ms
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
t,
TIME (
s)
t,
TIME (
s)
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7
1
2
10
7
5
2
1
0.7
0.2
0.3
5
0.5
10
3
3
0.3
0.2
7
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7
1
2
10
0.7
0.5
0.2
0.1
0.07
0.02
0.3
Figure 8. TurnOn Time
5
0.05
1
Figure 9. TurnOff Time
3
VCC = 250 V
IB1 = IB2
IC/IB = 20
ts
tr
tf
td
VCC = 250 V
IB1 = IB2
IC/IB = 20
0.3
0.03
0.2
7
RESISTIVE SWITCHING PERFORMANCE
MJE5740 MJE5741 MJE5742
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
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