1
Motorola Bipolar Power Transistor Device Data
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for generalpurpose amplifier and lowspeed switching applications.
High DC Current Gain --
hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Builtin BaseEmitter Resistors to Limit Leakage
Multiplication
Choice of Packages --
MJE700 and MJE800 series
T0220AB, MJE700T and MJE800T
MAXIMUM RATINGS
Rating
Symbol
MJE700,T
MJE800,T
MJE702
MJE703
MJE802
MJE803
Unit
CollectorEmitter Voltage
VCEO
60
80
Vdc
CollectorBase Voltage
VCB
60
80
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
0.1
Adc
CASE 77
TO220
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
40
0.32
50
0.40
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
CASE 77
TO220
R
JC
3.13
2.50
_
C/W
25
TC, CASE TEMPERATURE (
C)
0
50
125
150
30
P
D
, POWER DISSIP
A
TION (W
A
TTS)
TO220AB
50
40
20
10
Figure 1. Power Derating
75
100
TO126
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE700/D
Motorola, Inc. 1995
MJE700,T
MJE702
MJE703
MJE800,T
MJE802
MJE803
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40 WATT
50 WATT
PNP
NPN
CASE 7708
TO225AA TYPE
MJE700 703
MJE800 803
CASE 221A06
TO220AB
MJE700T
MJE800T
REV 3
MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (1)
MJE700,T, MJE800,T
(IC = 50 mAdc, IB = 0)
MJE702, MJE703, MJE802, MJE803
V(BR)CEO
60
80
--
--
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
MJE700,T, MJE800,T
(VCE = 80 Vdc, IB = 0)
MJE702, MJE703, MJE802, MJE803
ICEO
--
--
100
100
Adc
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0)
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0, TC = 100
_
C)
ICBO
--
--
100
500
Adc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
--
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
MJE700,T, MJE702, MJE800,T, MJE802
(IC = 2.0 Adc, VCE = 3.0 Vdc)
MJE703, MJE803
(IC = 4.0 Adc, VCE = 3.0 Vdc)
All devices
hFE
750
750
100
--
--
--
--
CollectorEmitter Saturation Voltage (1)
(IC = 1.5 Adc, IB = 30 mAdc)
MJE700,T, MJE702, MJE800,T, MJE802
(IC = 2.0 Adc, IB = 40 mAdc)
MJE703, MJE803
(IC = 4.0 Adc, IB = 40 mAdc)
All devices
VCE(sat)
--
--
--
2.5
2.8
3.0
Vdc
BaseEmitter On Voltage (1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
MJE700,T, MJE702, MJE800,T, MJE802
(IC = 2.0 Adc, VCE = 3.0 Vdc)
MJE703, MJE803
(IC = 4.0 Adc, VCE = 3.0 Vdc)
All devices
VBE(on)
--
--
--
2.5
2.5
3.0
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
1.0
--
--
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
0.04
0.2
2.0
0.1
0.06
0.4
1.0
4.0
IC, COLLECTOR CURRENT (AMP)
t,
TIME (
s)
2.0
1.0
0.8
0.6
0.4
0.2
ts
Figure 2. Switching Times Test Circuit
tr
td @ VBE(off) = 0
PNP
NPN
4.0
0.6
Figure 3. Switching Times
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
JC(t) = r(t) R
JC
R
JC = 2.50
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) Z
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.1
0.5
0.2
0.02
Figure 4. Thermal Response (MJE700T, 800T Series)
V2
APPROX
+ 8.0 V
0
6.0 k
SCOPE
VCC
30 V
RC
51
For td and tr, D1 id disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
25
s
tr, tf
10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
V1
APPROX
12 V
TUT
RB
D1
150
tf
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
C
MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE
0.05
1.0
2.0
5.0
10
20
50
100
200
1000
500
JC(t) = r(t)
JC
JC = 3.12
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk)
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.1
0.5
0.2
Figure 5. Thermal Response (MJE700, 800 Series)
0.03
3.0
30
300
0.3
(NORMALIZED)
10
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.1
100
2.0
5.0
0.5
Figure 6. MJE700 Series
MJE702, 703
MJE700
dc
1.0
3.0
1.0 ms
70
50
30
20
10
7.0
5.0
100
s
TJ = 150
C
I C
, COLLECT
OR CURRENT
(AMP)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.1
Figure 7. MJE800 Series
I C
, COLLECT
OR CURRENT
(AMP)
100
70
50
30
20
10
7.0
5.0
0.2
0.7
0.3
7.0
10
2.0
5.0
0.5
1.0
3.0
0.2
0.7
0.3
7.0
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100
s
1.0 ms
5.0 ms
dc
TJ = 150
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
ACTIVEREGION SAFEOPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 6 and 7 are based on TJ(pk) = 150
_
C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_
C. TJ(pk) may be calculated from the data in Figure 4
or 5. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.1
1.0
5.0
0.2
Figure 8. MJE700T
0.5
2.0
5.0
I C
, COLLECT
OR CURRENT
(AMP)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.1
Figure 9. MJE800T
I C
, COLLECT
OR CURRENT
(AMP)
100
70
50
30
20
10
7.0
5.0
100
70
50
30
20
10
7.0
10
1.0
5.0
0.2
0.5
2.0
100
s
1.0 ms
5.0 ms
dc
TJ = 150
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100
s
1.0 ms
5.0 ms
dc
TJ = 150
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
IC, COLLECTOR CURRENT (AMP)
PNP
MJE700, T Series
NPN
MJE800, T Series
Figure 10. DC Current Gain
Figure 11. Collector Saturation Region
Figure 12. "On" Voltages
0.04
IC, COLLECTOR CURRENT (AMP)
300
0.06
0.2
2.0 k
800
4.0 k
h
FE
, DC CURRENT
GAIN
VCE = 3.0 V
TJ = 125
C
3.0 k
0.1
0.6
25
C
55
C
1.0 k
0.4
1.0
6.0 k
400
600
2.0
4.0
0.04
300
0.06
0.2
2.0 k
800
4.0 k
h
FE
, DC CURRENT
GAIN
3.0 k
0.1
0.6
1.0 k
0.4
1.0
6.0 k
400
600
2.0
4.0
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
2.0
5.0
IC =
0.5 A
1.0 A
1.0
TJ = 25
C
3.0
1.0
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1.0
V
, VOL
T
AGE (VOL
TS)
2.2
1.8
0.6
0.2
0.06
0.2
2.0
0.1
0.6
0.4
1.0
4.0
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1.0
V
, VOL
T
AGE (VOL
TS)
2.2
1.8
0.6
0.2
0.06
0.2
2.0
0.1
0.6
0.4
1.0
4.0
20
50
100
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.6
0.1
0.2
0.5
10
2.0
5.0
1.0
3.0
1.0
20
50
100
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
2.0 A
4.0 A
TJ = 25
C
VCE = 3.0 V
TJ = 125
C
25
C
55
C
IC =
0.5 A
1.0 A
TJ = 25
C
2.0 A
4.0 A
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
TJ = 25
C
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