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1
Motorola Bipolar Power Transistor Device Data
Complementary
Silicon Power Transistors
. . . specifically designed for general purpose amplifier and switching applications.
Isolated Overmold Package (1500 Volts RMS Min)
Electrically Similar to the Popular MJE3055T and MJE2955T
CollectorEmitter Sustaining Voltage -- VCEO(sus) 90 Volts
10 Amperes Rated Collector Current
No Isolating Washers Required
Reduced System Cost
UL Recognized, File #E69369, to 3500 VRMS Isolation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Sustaining Voltage
VCEO(sus)
90
Vdc
CollectorEmitter Breakdown Voltage
VCES
90
Vdc
BaseEmitter Voltage
VEBO
5
Vdc
Collector Current -- Continuous
IC
10
Adc
Base Current -- Continuous
IB
6
Adc
RMS Isolation Voltage (3)
Test No. 1 Per Fig. 4
(for 1 sec, R.H. < 30%,
Test No. 2 Per Fig. 5
TA = 25
_
C)
Test No. 3 Per Fig. 6
VISOL
4500
3500
1500
VRMS
Total Power Dissipation @ TC = 25
_
C (2)
Derate above 25
_
C
PD
30
0.25
Watts
W/
_
C
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
PD
2
0.016
Watts
W/
_
C
Operating and Storage Temperature Range
TJ, Tstg
55 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance -- Junction to Case (2)
R
JC
4
_
C/W
Thermal Resistance -- Junction to Ambient
R
JA
62.5
_
C/W
Lead Temperature for Soldering Purposes
TL
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
(2) Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a
(2)
heatsink with thermal grease and a mounting torque of
6 in. lbs.
(3) Proper strike and creepage distance must be provided.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF3055/D
Motorola, Inc. 1995
MJF3055
MJF2955
COMPLEMENTARY
SILICON
POWER TRANSISTORS
10 AMPERES
90 VOLTS
30 WATTS
NPN
PNP
CASE 221D02
TO220 TYPE
MJF3055 MJF2955
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (1)
CollectorEmitter Sustaining Voltage (IC = 200 mAdc, IB = 0)
VCEO(sus)
90
--
Vdc
Collector Cutoff Current (VCE = 90 Vdc, VBE = 0)
ICES
--
1
Adc
Collector Cutoff Current (VCE = 90 Vdc, IE = 0)
ICBO
--
1
Adc
EmitterBase Leakage (VEB = 5 Vdc, IC = 0)
IEBO
--
1
Adc
ON CHARACTERISTICS (1)
DC Current Gain (ICE = 4 Adc, VCE = 4 Vdc)
DC Current Gain
(ICE = 10 Adc, VCE = 4 Vdc)
hFE
20
5
100
--
--
CollectorEmitter Saturation Voltage
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
--
--
1
2.5
Vdc
BaseEmitter On Voltage (IC = 4 Adc, VBE = 4 Vdc)
VBE(on)
--
1.5
Vdc
DYNAMIC CHARACTERISTICS
CurrentGainBandwidth Product
(VCE = 10 Vdc, IC = 0.5 Adc, ftest = 500 kHz)
fT
2
--
MHz
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
I C
, COLLECT
OR CURRENT
(AMPS)
0.01
IC, COLLECTOR CURRENT (AMP)
5
0.05
0.1
2
30
500
h
FE
, DC CURRENT
GAIN
VCE = 2 V
TJ = 150
C
50
25
C
55
C
10
0.02
0.2
0.5
1
300
200
100
20
IC, COLLECTOR CURRENT (AMP)
1.4
1.2
0.8
2
IC, COLLECTOR CURRENT (AMP)
1.6
1.2
0.8
0.4
Figure 1. Maximum Forward Bias Safe
Operating Area
Figure 2. DC Current Gain
Figure 3. "On" Voltages
0.2
0
0
0.4
0.2
1
0.5
10
0.1
0.3
3
2
5
0.6
1
V
, VOL
T
AGE (VOL
TS)
V
, VOL
T
AGE (VOL
TS)
100
s
dc
20
1
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.3
2
100
5
3
10
2
0.5
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25
C
(SINGLE PULSE)
3
5
10
20
1
0.2
30
5 ms
50
5
10
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3 V
PNP
MJF3055
PNP
MJF2955
TJ = 25
C
0.2
1
0.5
10
0.1
0.3
3
2
5
TJ = 150
C
1 ms
VCE(sat) @ IC/IB = 10
TJ = 25
C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
VCE(sat) @ IC/IB = 10
MJF3055 MJF2955
3
Motorola Bipolar Power Transistor Device Data
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.110" MIN
Figure 4. Clip Mounting Position
for Isolation Test Number 1
* Measurement made between leads and heatsink with all leads shorted together
CLIP
CLIP
0.107" MIN
LEADS
HEATSINK
0.107" MIN
Figure 5. Clip Mounting Position
for Isolation Test Number 2
Figure 6. Screw Mounting Position
for Isolation Test Number 3
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
TEST CONDITIONS FOR ISOLATION TESTS*
440 SCREW
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT
CLIP
HEATSINK
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-
stant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack-
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in . lbs of mounting torque under any mounting conditions.
Figure 7. Typical Mounting Techniques*
MOUNTING INFORMATION
** For more information about mounting power semiconductors see Application Note AN1040.
MJF3055 MJF2955
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221D02
TO220 TYPE
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.621
0.629
15.78
15.97
INCHES
B
0.394
0.402
10.01
10.21
C
0.181
0.189
4.60
4.80
D
0.026
0.034
0.67
0.86
F
0.121
0.129
3.08
3.27
G
0.100 BSC
2.54 BSC
H
0.123
0.129
3.13
3.27
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.14
1.52
N
0.200 BSC
5.08 BSC
Q
0.126
0.134
3.21
3.40
R
0.107
0.111
2.72
2.81
S
0.096
0.104
2.44
2.64
U
0.259
0.267
6.58
6.78
B
Y
G
N
D
L
K
H
A
F
Q
3 PL
1 2 3
M
B
M
0.25 (0.010)
Y
SEATING
PLANE
T
U
C
S
J
R
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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MJF3055/D
*MJF3055/D*
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