1
Motorola Bipolar Power Transistor Device Data
Designer's
TM
Data Sheet
SCANSWITCH
TM
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors
The MJL16218 is a stateoftheart SWITCHMODE
TM
bipolar power transistor. It is
specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,
high and very high resolution, full page, monochrome monitors.
1500 Volt CollectorEmitter Breakdown Capability
Typical Dynamic Desaturation Specified (New TurnOff Characteristic)
Application Specific StateoftheArt Die Design
Fast Switching:
175 ns Inductive Fall Time (Typ)
2000 ns Inductive Storage Time (Typ)
Low Saturation Voltage:
0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive
Low CollectorEmitter Leakage Current -- 250
A Max at 1500 Volts -- VCES
High EmitterBase Breakdown Capability For High Voltage Off Drive Circuits --
8.0 Volts (Min)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Breakdown Voltage
VCES
1500
Vdc
CollectorEmitter Sustaining Voltage
VCEO(sus)
650
Vdc
EmitterBase Voltage
VEBO
8.0
Vdc
Collector Current -- Continuous
-- Pulsed (1)
IC
ICM
15
20
Adc
Base Current -- Continuous
-- Pulsed (1)
IB
IBM
7.0
14
Adc
Maximum Repetitive EmitterBase
Avalanche Energy
W (BER)
0.2
mJ
Total Power Dissipation @ TC = 25
C
@ TC = 100
C
Derated above TC = 25
C
PD
170
39
1.49
Watts
W/
C
Operating and Storage Temperature Range
TJ, Tstg
55 to 125
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance -- Junction to Case
R
JC
0.67
C/W
Lead Temperature for Soldering Purposes
1/8
from the case for 5 seconds
TL
275
C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
(2) Proper strike and creepage distance must be provided.
Designer's and SCANSWITCH are trademarks of Motorola, Inc.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL16218/D
Motorola, Inc. 1997
MJL16218
POWER TRANSISTOR
15 AMPERES
1500 VOLTS -- VCES
170 WATTS
*Motorola Preferred Device
*
CASE 340G02, STYLE 2
TO3PBL
MJL16218
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (2)
Collector Cutoff Current
(VCE = 1500 V, VBE = 0 V)
(VCE = 1200 V, VBE = 0 V)
ICES
--
--
--
--
250
25
Adc
EmitterBase Leakage (VEB = 8.0 Vdc, IC = 0)
IEBO
--
--
25
Adc
EmitterBase Breakdown Voltage (IE = 1.0 mA, IC = 0)
V(BR)EBO
8.0
11
--
Vdc
CollectorEmitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0)
VCEO(sus)
650
--
--
Vdc
ON CHARACTERISTICS (2)
CollectorEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 2.0 Adc)
(IC = 3.0 Adc, IB = 0.6 Adc)
VCE(sat)
--
--
0.17
0.14
1.0
0.5
Vdc
BaseEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 1.0 Adc)
VBE(sat)
--
0.9
1.5
Vdc
DC Current Gain
(IC = 1.0 A, VCE = 5.0 Vdc)
(IC = 12 A, VCE = 5.0 Vdc)
hFE
--
4.0
24
6.0
--
--
--
DYNAMIC CHARACTERISTICS
Dynamic Desaturation Interval (IC = 5.5 A, IB1 = 2.2 A, LB = 1.5
H)
tds
--
350
--
ns
Output Capacitance
(VCE = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
--
300
500
pF
Gain Bandwidth Product
(VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz)
fT
--
0.8
--
MHz
SWITCHING CHARACTERISTICS
Inductive Load (IC = 6.0 A, IB = 2.0 A), High Resolution Deflection
Simulator Circuit Table 2
Storage
Fall Time
tsv
tfi
--
--
2000
175
3000
250
ns
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
I C
, COLLECT
OR
CURRENT
(A)
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 1. Maximum Forward Bias
Safe Operating Area
1.0
10
1.0
I C
, COLLECT
OR
CURRENT
(A)
0.1
1000
300
1500
IC/IB = 5
TJ
100
C
0
VCE, COLLECTOREMITTER VOLTAGE (V)
900
Figure 2. Maximum Reverse Bias
Safe Operating Area
10
18
6
2
600
1200
100
0.01
100
10
14
SAFE OPERATING AREA
250 ms
100 ms
50 ms
10 ms
MJL16218
3
Motorola Bipolar Power Transistor Device Data
SAFE OPERATING AREA (continued)
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TC = 25
_
C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
25
_
C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at
the voltages shown on Figure 1 may be found at any case
temperature by using the appropriate curve on Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by second breakdown.
Figure 3. Power Derating
25
TC, CASE TEMPERATURE (
C)
0
45
85
125
0.6
POWER DERA
TING
F
ACT
OR
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
65
THERMAL
DERATING
105
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turnoff, in most cases, with
the basetoemitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse
Biased Safe Operating Area and represents the voltage
current condition allowable during reverse biased turnoff.
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 2
gives the RBSOA characteristics.
H.P. 214
OR EQUIV.
P.G.
0
35 V
50
500
1
F
100
V
2N5337
2N6191
+ V
11 V
100
0.02
F
20
10
F
0.02
F
+
RB1
RB2
A
A
50
T1
+ V
0 V
V
*IB
*IC
T.U.T.
L
MR856
Vclamp
VCC
IC
VCE
IB
IB1
IB2
IC(pk)
VCE(pk)
T1
[
Lcoil (ICpk)
VCC
Note: Adjust V to obtain desired VBE(off) at Point A.
T1 adjusted to obtain IC(pk)
V(BR)CEO
L = 10 mH
RB2 =
VCC = 20 Volts
RBSOA
L = 200
H
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
*Tektronix
*
P6042 or
*
Equivalent
+
Table 1. RBSOA/V(BR)CEO(SUS) Test Circuit
MJL16218
4
Motorola Bipolar Power Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
V
,
VOL
T
AGE
(V)
V
BE
, BASEEMITTER VOL
T
AGE (V)
V
,
VOL
T
AGE (V)
Figure 4. Typical CollectorEmitter
Saturation Voltage
IC, COLLECTOR CURRENT (A)
0.1
1.0
0.1
1.0
Figure 5. Typical CollectorEmitter
Saturation Voltage
0.01
0.1
1.0
10
1.0
IC, COLLECTOR CURRENT (A)
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 6. Typical EmitterBase
Saturation Voltage
10
1.0
0.1
1.0
0.1
IC, COLLECTOR CURRENT (A)
Figure 7. Typical EmitterBase
Saturation Voltage
0.1
1.0
10
10
0.1
1.0
10
10
25
C
100
C
25
C
100
C
25
C
100
C
25
C
100
C
IC/IB = 2.5
IC/IB = 5.0
IC/IB = 2.5
V
BE
, BASEEMITTER VOL
T
AGE (V)
IC/IB = 5.0
MJL16218
5
Motorola Bipolar Power Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
V
,
VOL
T
AGE
(V)
H
FE
, DC CURRENT
GAIN
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (A)
10
1.0
0.01
100
Figure 9. DC Current Gain
1.0
0.01
1.0
100
100
IC, COLLECTOR CURRENT (A)
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 10. "On" Voltages
1.0
0.1
1.0
0.1
100
10
0.1
10
0.1
10
100
C
25
C
100
C
25
C
100
C
25
C
HFE = 2.0 V
H
FE
, DC CURRENT
GAIN
HFE = 5.0 V
VBE(on) = 5.0 V
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